Name: NVMFD5873NLWFT1G
Brand: ON Semiconductor
SKU: NVMFD5873NLWFT1G
Availability: InStock
Rating: 5 (76 reviews)

NVMFD5873NLWFT1G

Per Riferimento Soltanto

Numero di parte	NVMFD5873NLWFT1G
Produttore	ON Semiconductor
Descrizione	MOSFET 2N-CH 60V 10A SO8FL
Scheda dati
pacchetto	8-PowerTDFN
ECAD
A magazzino	3.376 piece(s)
Prezzo unitario	Request a Quote
Tempi di Consegna	Essere confermato
Tempo di consegna stimato	mag 15 - mag 20 (Scegli una spedizione rapida)
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Servizi di consegna

Stiamo offrendo NVMFD5873NLWFT1G per il prezzo competitivo sul mercato globale, vi preghiamo di inviarci una richiesta di quote per i prezzi. Grazie!
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Specifiche NVMFD5873NLWFT1G

Produttore	ON Semiconductor
Categoria	Dispositivi a semiconduttore discreti - Transistor - FET, MOSFET - Array
pacchetto	8-PowerTDFN
ECAD
Serie	-
Tipo FET	2 N-Channel (Dual)
Caratteristica FET	Logic Level Gate
Drain to Source Voltage (Vdss)	60V
Corrente - Scarico continuo (Id) @ 25 ° C	10A
Rds On (Max) @ Id, Vgs	13 mOhm @ 15A, 10V
Vgs (th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	30.5nC @ 10V
Capacità di ingresso (Ciss) (Max) @ Vds	1560pF @ 25V
Potenza - Max	3.1W
temperatura di esercizio	-55°C ~ 175°C (TJ)
Tipo di montaggio	Surface Mount
Pacchetto / caso	8-PowerTDFN
Pacchetto dispositivo fornitore	8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)

NVMFD5873NLWFT1G Packaging

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(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

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(1)Inform us within 90 days

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