Name: TK10J80E,S1E
Brand: Toshiba Semiconductor and Storage
SKU: TK10J80E-S1E
Availability: InStock
Rating: 5 (173 reviews)

TK10J80E,S1E

Per Riferimento Soltanto

Numero di parte	TK10J80E,S1E
Produttore	Toshiba Semiconductor and Storage
Descrizione	MOSFET N-CH 800V TO-3PN
Scheda dati
pacchetto	TO-3P-3, SC-65-3
ECAD
A magazzino	2.080 piece(s)
Prezzo unitario	Request a Quote
Tempi di Consegna	Essere confermato
Tempo di consegna stimato	mag 20 - mag 25 (Scegli una spedizione rapida)
Richiedi Preventivo

Modalità di pagamento
Servizi di consegna

Stiamo offrendo TK10J80E,S1E per il prezzo competitivo sul mercato globale, vi preghiamo di inviarci una richiesta di quote per i prezzi. Grazie!
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Specifiche TK10J80E,S1E

Produttore	Toshiba Semiconductor and Storage
Categoria	Dispositivi a semiconduttore discreti - Transistor - FET, MOSFET - Singoli
pacchetto	TO-3P-3, SC-65-3
ECAD
Serie	��-MOSVIII
Tipo FET	N-Channel
Tecnologia	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	800V
Corrente - Scarico continuo (Id) @ 25 ° C	10A (Ta)
Tensione dell'unità (Rds massimo attivato, Rds minimo attivo)	10V
Vgs (th) (Max) @ Id	4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	46nC @ 10V
Capacità di ingresso (Ciss) (Max) @ Vds	2000pF @ 25V
Vgs (massimo)	±30V
Caratteristica FET	-
Dissipazione di potenza (max)	250W (Tc)
Rds On (Max) @ Id, Vgs	1 Ohm @ 5A, 10V
temperatura di esercizio	150°C (TJ)
Tipo di montaggio	Through Hole
Pacchetto dispositivo fornitore	TO-3P(N)
Pacchetto / caso	TO-3P-3, SC-65-3

TK10J80E,S1E Packaging

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(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of TK10J80E,S1E.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations
7.How to contact us to get technical supports, such as TK10J80E,S1E pin diagram, TK10J80E,S1E datasheet?

If you need any after-sales service, please do not hesitate to contact us.

TK10J80E,S1E Prodotti Correlati

SIT1602BC-71-25N-48.000000E	SiTIME, -20 TO 70C, 2016, 20PPM, 2.5V, 4, -, ��-MOSVIII	Visualizza
1808Y0630152KCR	Knowles Syfer, CAP CER 1500PF 63V C0G/NP0 1808, 1808 (4520 Metric), ��-MOSVIII	Visualizza
SL28541BZC	Silicon Labs, IC CLOCK CK505 MOBILE 64TSSOP, 64-TFSOP (0.240", 6.10mm Width), ��-MOSVIII	Visualizza
FNM-1-8/10	Eaton, FUSE CARTRIDGE 5AG, 5AG, 10mm x 38.1mm, ��-MOSVIII	Visualizza
RT0805BRE07300KL	Yageo, RES SMD 300K OHM 0.1% 1/8W 0805, 0805 (2012 Metric), ��-MOSVIII	Visualizza
0395161002	Molex, LLC, TERM BLOCK HDR 2POS 90DEG 3.81MM, -, ��-MOSVIII	Visualizza
ESW-108-59-S-S-LL	Samtec Inc., ELEVATED SOCKET STRIPS, -, ��-MOSVIII	Visualizza
0751020113	Molex, LLC, CONN HDR DUAL 72POS .100 SRT TIN, -, ��-MOSVIII	Visualizza
ABC43DKNH-S1243	Sullins Connector Solutions, CONN EDGE DUAL FMALE 86POS 0.100, -, ��-MOSVIII	Visualizza
JCC15HETH	Sullins Connector Solutions, CONN EDGE DUAL FMALE 15POS 0.100, -, ��-MOSVIII	Visualizza
SI5340D-D10600-GMR	Silicon Labs, IC CLOCK GENERATOR PLL 44QFN, -, ��-MOSVIII	Visualizza
XC6220C22BQR-G	Torex Semiconductor Ltd, 1A HIGH SPEED LDO REGULATOR WITH, -, ��-MOSVIII	Visualizza

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Catene di fornitura globali - Risorse per distributori affidabili e autorizzati

Numero di parte

Produttore

Descrizione

Azione

TK10J80E,S1E

D# TK10J80E,S1E

Toshiba America Electronic Components

Trans MOSFET N-CH 800V 10A 3-Pin TO-3P(N) - Rail/Tube (Alt: TK10J80E,S1E)

RoHS: Compliant

Numero di parte

Produttore

Descrizione

Azione

TK10J80E,S1E

D# TK10J80ES1E-ND

Toshiba America Electronic Components

MOSFET N-CH 800V 10A TO3P

Numero di parte

Produttore

Descrizione

Azione

TK10J80E,S1E

Toshiba America Electronic Components

MOSFET PLN MOS 800V 1000m (VGS=10V) TO-3PN

pbFree: Pb-Free

TK10J80ES1E

Toshiba America Electronic Components

MOSFET MOSFET TRAN TO-3PN(OS)

pbFree: Pb-Free

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TK10J80E,S1E

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