Name: TSM130NB06LCR
Brand: Taiwan Semiconductor Corporation
SKU: TSM130NB06LCR
Availability: InStock
Rating: 5 (144 reviews)

TSM130NB06LCR

Per Riferimento Soltanto

Numero di parte	TSM130NB06LCR
Produttore	Taiwan Semiconductor Corporation
Descrizione	MOSFET N-CH 60V 10A/51A 8PDFN
Scheda dati
pacchetto	-
ECAD
A magazzino	0 piece(s)
Prezzo unitario	Request a Quote
Tempi di Consegna	Essere confermato
Tempo di consegna stimato	giu 17 - giu 22 (Scegli una spedizione rapida)
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Specifiche TSM130NB06LCR

Produttore	Taiwan Semiconductor Corporation
Categoria	Dispositivi a semiconduttore discreti - Transistor - FET, MOSFET - Singoli
pacchetto	-
ECAD
Serie	-
Tipo FET	N-Channel
Tecnologia	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60 V
Corrente - Scarico continuo (Id) @ 25 ° C	10A (Ta), 51A (Tc)
Tensione dell'unità (Rds massimo attivato, Rds minimo attivo)	4.5V, 10V
Vgs (th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	37 nC @ 10 V
Capacità di ingresso (Ciss) (Max) @ Vds	2175 pF @ 30 V
Vgs (massimo)	±20V
Caratteristica FET	-
Dissipazione di potenza (max)	3.1W (Ta), 83W (Tc)
Rds On (Max) @ Id, Vgs	13mOhm @ 10A, 10V
temperatura di esercizio	-55°C ~ 175°C (TJ)
Tipo di montaggio	Surface Mount
Pacchetto dispositivo fornitore	8-PDFN (5.2x5.75)
Pacchetto / caso	8-PowerLDFN

TSM130NB06LCR Packaging

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6. What is the process for return or replacement of TSM130NB06LCR?

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(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of TSM130NB06LCR.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations
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TSM130NB06LCR

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