Pagina 11 - Prodotti Diodes Incorporated - Transistor - FET, MOSFET - Singoli | Heisener Electronics
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Prodotti Diodes Incorporated - Transistor - FET, MOSFET - Singoli

Record 2.523
Pagina  11/85
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
Azione
Quantità
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
DMTH6009LPSWQ-13
Diodes Incorporated

MOSFET BVDSS: 41V~60V POWERDI506

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 11.76A (Ta), 89.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 33.5 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1925 pF @ 30 V
  • Vgs (Max): ±16V
  • FET Feature: -
  • Power Dissipation (Max): 2.8W (Ta), 136W (Tc)
  • Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount, Wettable Flank
  • Supplier Device Package: PowerDI5060-8 (Type UX)
  • Package / Case: 8-PowerTDFN
pacchetto: -
Request a Quote
MOSFET (Metal Oxide)
60 V
11.76A (Ta), 89.5A (Tc)
4.5V, 10V
2V @ 250µA
33.5 nC @ 10 V
1925 pF @ 30 V
±16V
-
2.8W (Ta), 136W (Tc)
10mOhm @ 20A, 10V
-55°C ~ 175°C (TJ)
Surface Mount, Wettable Flank
PowerDI5060-8 (Type UX)
8-PowerTDFN
DMN95H8D5HCTI
Diodes Incorporated

MOSFET N-CHANNEL 950V ITO220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 950 V
  • Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 7.9 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 25 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 30W (Tc)
  • Rds On (Max) @ Id, Vgs: 7Ohm @ 1A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: ITO-220AB
  • Package / Case: TO-220-3 Full Pack, Isolated Tab
pacchetto: -
Azione54
MOSFET (Metal Oxide)
950 V
2.5A (Tc)
10V
5V @ 250µA
7.9 nC @ 10 V
470 pF @ 25 V
±30V
-
30W (Tc)
7Ohm @ 1A, 10V
-55°C ~ 150°C (TJ)
Through Hole
ITO-220AB
TO-220-3 Full Pack, Isolated Tab
DMN2053UW-13
Diodes Incorporated

MOSFET 8V~24V SOT323

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 3.6 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 369 pF @ 10 V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 470mW (Ta)
  • Rds On (Max) @ Id, Vgs: 56mOhm @ 2A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-323
  • Package / Case: SC-70, SOT-323
pacchetto: -
Request a Quote
MOSFET (Metal Oxide)
20 V
2.9A (Ta)
1.5V, 4.5V
1V @ 250µA
3.6 nC @ 4.5 V
369 pF @ 10 V
±12V
-
470mW (Ta)
56mOhm @ 2A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-323
SC-70, SOT-323
DMTH46M7SFVW-13
Diodes Incorporated

MOSFET BVDSS: 31V~40V POWERDI333

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 16.3A (Ta), 67.2A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 14.8 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1315 pF @ 20 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.2W (Ta), 54.5W (Tc)
  • Rds On (Max) @ Id, Vgs: 7.4mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount, Wettable Flank
  • Supplier Device Package: PowerDI3333-8 (SWP) Type UX
  • Package / Case: 8-PowerVDFN
pacchetto: -
Request a Quote
MOSFET (Metal Oxide)
40 V
16.3A (Ta), 67.2A (Tc)
10V
4V @ 250µA
14.8 nC @ 10 V
1315 pF @ 20 V
±20V
-
3.2W (Ta), 54.5W (Tc)
7.4mOhm @ 20A, 10V
-55°C ~ 175°C (TJ)
Surface Mount, Wettable Flank
PowerDI3333-8 (SWP) Type UX
8-PowerVDFN
ZXMN4A06GQTA
Diodes Incorporated

MOSFET BVDSS: 31V~40V SOT223 T&R

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 746 pF @ 40 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2W (Ta)
  • Rds On (Max) @ Id, Vgs: 50mOhm @ 4.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-223-3
  • Package / Case: TO-261-4, TO-261AA
pacchetto: -
Request a Quote
MOSFET (Metal Oxide)
40 V
5A (Ta)
4.5V, 10V
1V @ 250µA
19 nC @ 10 V
746 pF @ 40 V
±20V
-
2W (Ta)
50mOhm @ 4.5A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-223-3
TO-261-4, TO-261AA
DMN60H080DS-13
Diodes Incorporated

MOSFET N-CH 600V 80MA SOT23-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 80mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 1.7 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 25 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.1W (Ta)
  • Rds On (Max) @ Id, Vgs: 100Ohm @ 60mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-3
  • Package / Case: TO-236-3, SC-59, SOT-23-3
pacchetto: -
Azione29.970
MOSFET (Metal Oxide)
600 V
80mA (Ta)
4.5V, 10V
3V @ 250µA
1.7 nC @ 10 V
25 pF @ 25 V
±20V
-
1.1W (Ta)
100Ohm @ 60mA, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
DMTH43M7LFGQ-13-A
Diodes Incorporated

MOSFET BVDSS: 31V~40V POWERDI333

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2182 pF @ 20 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.5W (Ta), 65.2W (Tc)
  • Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: POWERDI3333-8
  • Package / Case: 8-PowerVDFN
pacchetto: -
Request a Quote
MOSFET (Metal Oxide)
40 V
100A (Tc)
5V, 10V
2.5V @ 250µA
30 nC @ 10 V
2182 pF @ 20 V
±20V
-
3.5W (Ta), 65.2W (Tc)
3mOhm @ 20A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
POWERDI3333-8
8-PowerVDFN
DMT10H032LK3-13
Diodes Incorporated

MOSFET BVDSS: 61V~100V TO252 T&R

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 11.9 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 683 pF @ 50 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.6W (Ta)
  • Rds On (Max) @ Id, Vgs: 32mOhm @ 6A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252 (DPAK)
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
pacchetto: -
Request a Quote
MOSFET (Metal Oxide)
100 V
26A (Tc)
4.5V, 10V
2.5V @ 250µA
11.9 nC @ 10 V
683 pF @ 50 V
±20V
-
1.6W (Ta)
32mOhm @ 6A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TO-252 (DPAK)
TO-252-3, DPAK (2 Leads + Tab), SC-63
DMP2065UQ-13
Diodes Incorporated

MOSFET BVDSS: 8V~24V SOT23 T&R 1

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 900mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 10.2 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 808 pF @ 15 V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 900mW
  • Rds On (Max) @ Id, Vgs: 60mOhm @ 4.2A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-3
  • Package / Case: TO-236-3, SC-59, SOT-23-3
pacchetto: -
Request a Quote
MOSFET (Metal Oxide)
20 V
4A (Ta)
1.8V, 4.5V
900mV @ 250µA
10.2 nC @ 4.5 V
808 pF @ 15 V
±12V
-
900mW
60mOhm @ 4.2A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
DMN4036LK3Q-13
Diodes Incorporated

MOSFET BVDSS: 31V 40V TO252 T&R

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 12.2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 9.2 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 453 pF @ 20 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.12W (Ta)
  • Rds On (Max) @ Id, Vgs: 36mOhm @ 12A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252-3
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
pacchetto: -
Request a Quote
MOSFET (Metal Oxide)
40 V
12.2A (Ta)
4.5V, 10V
3V @ 250µA
9.2 nC @ 10 V
453 pF @ 20 V
±20V
-
2.12W (Ta)
36mOhm @ 12A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TO-252-3
TO-252-3, DPAK (2 Leads + Tab), SC-63
DMP2900UW-13
Diodes Incorporated

MOSFET BVDSS: 8V-24V SOT323

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 600mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 49 pF @ 16 V
  • Vgs (Max): ±6V
  • FET Feature: -
  • Power Dissipation (Max): 300mW
  • Rds On (Max) @ Id, Vgs: 750mOhm @ 430mA, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-323
  • Package / Case: SC-70, SOT-323
pacchetto: -
Request a Quote
MOSFET (Metal Oxide)
20 V
600mA (Ta)
1.8V, 4.5V
1V @ 250µA
0.7 nC @ 4.5 V
49 pF @ 16 V
±6V
-
300mW
750mOhm @ 430mA, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-323
SC-70, SOT-323
DMP2004UFG-7
Diodes Incorporated

MOSFET BVDSS: 8V~24V PowerDI3333

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 115A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
  • Vgs(th) (Max) @ Id: 1.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3840 pF @ 10 V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Ta), 52W (Tc)
  • Rds On (Max) @ Id, Vgs: 3mOhm @ 15A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: POWERDI3333-8
  • Package / Case: 8-PowerVDFN
pacchetto: -
Request a Quote
MOSFET (Metal Oxide)
20 V
115A (Tc)
2.5V, 10V
1.1V @ 250µA
83 nC @ 10 V
3840 pF @ 10 V
±12V
-
1W (Ta), 52W (Tc)
3mOhm @ 15A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
POWERDI3333-8
8-PowerVDFN
DMP3096L-7
Diodes Incorporated

MOSFET BVDSS: 25V~30V SOT23 T&R

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 366 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 800mW (Ta)
  • Rds On (Max) @ Id, Vgs: 70mOhm @ 3.8A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-3
  • Package / Case: TO-236-3, SC-59, SOT-23-3
pacchetto: -
Request a Quote
MOSFET (Metal Oxide)
30 V
3.4A (Ta)
4.5V, 10V
2.1V @ 250µA
7.5 nC @ 10 V
366 pF @ 25 V
±20V
-
800mW (Ta)
70mOhm @ 3.8A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
DMP2035UQ-7
Diodes Incorporated

MOSFET BVDSS: 8V~24V SOT23 T&R 3

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 4.9A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 15.4 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1610 pF @ 10 V
  • Vgs (Max): ±10V
  • FET Feature: -
  • Power Dissipation (Max): 810mW (Ta)
  • Rds On (Max) @ Id, Vgs: 35mOhm @ 4A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-3
  • Package / Case: TO-236-3, SC-59, SOT-23-3
pacchetto: -
Azione9.000
MOSFET (Metal Oxide)
20 V
4.9A (Ta)
1.8V, 4.5V
1V @ 250µA
15.4 nC @ 4.5 V
1610 pF @ 10 V
±10V
-
810mW (Ta)
35mOhm @ 4A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
DMT12H065LFDF-7
Diodes Incorporated

MOSFET N-CH 115V 4.3A 6UDFN

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 115 V
  • Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 3V, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 252 pF @ 50 V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Ta)
  • Rds On (Max) @ Id, Vgs: 65mOhm @ 3A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: U-DFN2020-6 (Type F)
  • Package / Case: 6-UDFN Exposed Pad
pacchetto: -
Azione9.777
MOSFET (Metal Oxide)
115 V
4.3A (Ta)
3V, 10V
2.2V @ 250µA
5.5 nC @ 10 V
252 pF @ 50 V
±12V
-
1W (Ta)
65mOhm @ 3A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
U-DFN2020-6 (Type F)
6-UDFN Exposed Pad
DMP4065SQ-7
Diodes Incorporated

MOSFET P-CH 40V 2.4A SOT23 T&R

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 12.2 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 587 pF @ 20 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 720mW (Ta)
  • Rds On (Max) @ Id, Vgs: 80mOhm @ 4.2A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-3
  • Package / Case: TO-236-3, SC-59, SOT-23-3
pacchetto: -
Azione26.982
MOSFET (Metal Oxide)
40 V
2.4A (Ta)
4.5V, 10V
3V @ 250µA
12.2 nC @ 10 V
587 pF @ 20 V
±20V
-
720mW (Ta)
80mOhm @ 4.2A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
DMN2991UFA-7B
Diodes Incorporated

MOSFET BVDSS: 8V~24V X2-DFN0806-

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 520mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 280 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 14.6 pF @ 16 V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 420mW (Ta)
  • Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: X2-DFN0806-3
  • Package / Case: 3-XFDFN
pacchetto: -
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MOSFET (Metal Oxide)
20 V
520mA (Ta)
1.5V, 4.5V
1V @ 250µA
280 nC @ 4.5 V
14.6 pF @ 16 V
±8V
-
420mW (Ta)
990mOhm @ 100mA, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
X2-DFN0806-3
3-XFDFN
DMTH10H032SPSW-13
Diodes Incorporated

MOSFET BVDSS: 61V~100V PowerDI50

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 544 pF @ 50 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.2W (Ta)
  • Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount, Wettable Flank
  • Supplier Device Package: PowerDI5060-8 (Type UX)
  • Package / Case: 8-PowerTDFN
pacchetto: -
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MOSFET (Metal Oxide)
100 V
25A (Tc)
10V
4V @ 250µA
8 nC @ 10 V
544 pF @ 50 V
±20V
-
3.2W (Ta)
32mOhm @ 5A, 10V
-55°C ~ 175°C (TJ)
Surface Mount, Wettable Flank
PowerDI5060-8 (Type UX)
8-PowerTDFN
DMN62D2U-13
Diodes Incorporated

2N7002 FAMILY SOT23 T&R 10K

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 390mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.8 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 41 pF @ 30 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 500mW (Ta)
  • Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-3
  • Package / Case: TO-236-3, SC-59, SOT-23-3
pacchetto: -
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MOSFET (Metal Oxide)
60 V
390mA (Ta)
1.8V, 5V
1V @ 250µA
0.8 nC @ 4.5 V
41 pF @ 30 V
±20V
-
500mW (Ta)
2Ohm @ 50mA, 5V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
DMN2053UWQ-7
Diodes Incorporated

MOSFET BVDSS: 8V~24V SOT323 T&R

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 3.6 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 369 pF @ 10 V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 470mW (Ta)
  • Rds On (Max) @ Id, Vgs: 56mOhm @ 2A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-323
  • Package / Case: SC-70, SOT-323
pacchetto: -
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MOSFET (Metal Oxide)
20 V
2.9A (Ta)
1.5V, 4.5V
1V @ 250µA
3.6 nC @ 4.5 V
369 pF @ 10 V
±12V
-
470mW (Ta)
56mOhm @ 2A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-323
SC-70, SOT-323
DMP4016SSS-13
Diodes Incorporated

MOSFET BVDSS: 31V~40V SO-8 T&R 2

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 10.8A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 5697 pF @ 20 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.6W
  • Rds On (Max) @ Id, Vgs: 11mOhm @ 9.8A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SO
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
pacchetto: -
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MOSFET (Metal Oxide)
40 V
10.8A (Ta)
4.5V, 10V
2.5V @ 250µA
112 nC @ 10 V
5697 pF @ 20 V
±20V
-
1.6W
11mOhm @ 9.8A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-SO
8-SOIC (0.154", 3.90mm Width)
DMN67D8LV-13
Diodes Incorporated

MOSFET BVDSS: 41V 60V SOT563 T&R

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
pacchetto: -
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-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
DMPH4025SFVWQ-7
Diodes Incorporated

MOSFET P-CH 40V PWRDI3333

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 8.7A (Ta), 40A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 1.8V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 38.6 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1918 pF @ 20 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.3W (Ta), 60W (Tc)
  • Rds On (Max) @ Id, Vgs: 25mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount, Wettable Flank
  • Supplier Device Package: PowerDI3333-8 (SWP) Type UX
  • Package / Case: 8-PowerVDFN
pacchetto: -
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MOSFET (Metal Oxide)
40 V
8.7A (Ta), 40A (Tc)
4.5V, 10V
1.8V @ 250µA
38.6 nC @ 10 V
1918 pF @ 20 V
±20V
-
2.3W (Ta), 60W (Tc)
25mOhm @ 30A, 10V
-55°C ~ 175°C (TJ)
Surface Mount, Wettable Flank
PowerDI3333-8 (SWP) Type UX
8-PowerVDFN
DMN1008UFDF-13
Diodes Incorporated

MOSFET N-CH 12V 12.2A 6UDFN

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 12 V
  • Current - Continuous Drain (Id) @ 25°C: 12.2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 23.4 nC @ 8 V
  • Input Capacitance (Ciss) (Max) @ Vds: 995 pF @ 6 V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 700mW (Ta)
  • Rds On (Max) @ Id, Vgs: 8mOhm @ 5A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: U-DFN2020-6 (Type F)
  • Package / Case: 6-UDFN Exposed Pad
pacchetto: -
Azione119.685
MOSFET (Metal Oxide)
12 V
12.2A (Ta)
2.5V, 4.5V
1V @ 250µA
23.4 nC @ 8 V
995 pF @ 6 V
±8V
-
700mW (Ta)
8mOhm @ 5A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
U-DFN2020-6 (Type F)
6-UDFN Exposed Pad
DMP2045UFY4-7
Diodes Incorporated

MOSFET P-CH 20V 4.7A X2-DFN2015

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 634 pF @ 10 V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 670mW (Ta)
  • Rds On (Max) @ Id, Vgs: 45mOhm @ 4A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: X2-DFN2015-3
  • Package / Case: 3-XDFN
pacchetto: -
Azione8.742
MOSFET (Metal Oxide)
20 V
4.7A (Ta)
1.5V, 4.5V
1V @ 250µA
6.8 nC @ 4.5 V
634 pF @ 10 V
±8V
-
670mW (Ta)
45mOhm @ 4A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
X2-DFN2015-3
3-XDFN
DMP2040UVT-13
Diodes Incorporated

MOSFET P-CH 20V TSOT26

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta), 13A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 834 pF @ 10 V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 1.2W (Ta)
  • Rds On (Max) @ Id, Vgs: 38mOhm @ 8.9A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TSOT-26
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
pacchetto: -
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MOSFET (Metal Oxide)
20 V
5.5A (Ta), 13A (Tc)
2.5V, 4.5V
1.5V @ 250µA
8.6 nC @ 4.5 V
834 pF @ 10 V
±12V
-
1.2W (Ta)
38mOhm @ 8.9A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
TSOT-26
SOT-23-6 Thin, TSOT-23-6
DMT10H032SFVW-13
Diodes Incorporated

MOSFET BVDSS: 61V~100V POWERDI33

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 544 pF @ 50 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.3W (Ta)
  • Rds On (Max) @ Id, Vgs: 32mOhm @ 7A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount, Wettable Flank
  • Supplier Device Package: PowerDI3333-8 (SWP) Type UX
  • Package / Case: 8-PowerVDFN
pacchetto: -
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MOSFET (Metal Oxide)
100 V
35A (Tc)
10V
4V @ 250µA
8 nC @ 10 V
544 pF @ 50 V
±20V
-
1.3W (Ta)
32mOhm @ 7A, 10V
-55°C ~ 150°C (TJ)
Surface Mount, Wettable Flank
PowerDI3333-8 (SWP) Type UX
8-PowerVDFN
DMT4008LFDF-13
Diodes Incorporated

MOSFET BVDSS: 31V~40V U-DFN2020-

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 11.8A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 17.1 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1179 pF @ 20 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 800mW (Ta)
  • Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: U-DFN2020-6 (Type F)
  • Package / Case: 6-UDFN Exposed Pad
pacchetto: -
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MOSFET (Metal Oxide)
40 V
11.8A (Ta)
4.5V, 10V
3V @ 250µA
17.1 nC @ 10 V
1179 pF @ 20 V
±20V
-
800mW (Ta)
9.5mOhm @ 10A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
U-DFN2020-6 (Type F)
6-UDFN Exposed Pad
DMP2900UWQ-7
Diodes Incorporated

MOSFET BVDSS: 8V~24V SOT323 T&R

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 600mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.0007 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 49 pF @ 16 V
  • Vgs (Max): ±6V
  • FET Feature: -
  • Power Dissipation (Max): 300mW
  • Rds On (Max) @ Id, Vgs: 750mOhm @ 430mA, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-323
  • Package / Case: SC-70, SOT-323
pacchetto: -
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MOSFET (Metal Oxide)
20 V
600mA (Ta)
1.8V, 4.5V
1V @ 250µA
0.0007 nC @ 4.5 V
49 pF @ 16 V
±6V
-
300mW
750mOhm @ 430mA, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-323
SC-70, SOT-323
DMP21D1UTQ-13
Diodes Incorporated

MOSFET BVDSS: 8V~24V SOT523 T&R

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 630mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 33 pF @ 10 V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 260mW (Ta)
  • Rds On (Max) @ Id, Vgs: 710mOhm @ 400mA, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-523
  • Package / Case: SOT-523
pacchetto: -
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MOSFET (Metal Oxide)
20 V
630mA (Ta)
1.8V, 4.5V
1V @ 250µA
1.4 nC @ 4.5 V
33 pF @ 10 V
±8V
-
260mW (Ta)
710mOhm @ 400mA, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-523
SOT-523