Pagina 184 - Diodi - Raddrizzatori - Singoli | Dispositivi a semiconduttore discreti

Numero di parte	Produttore	Descrizione	pacchetto	Azione	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
MBRH24020	GeneSiC Semiconductor	DIODE SCHOTTKY 20V 240A D67 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20V Current - Average Rectified (Io): 240A Voltage - Forward (Vf) (Max) @ If: 720mV @ 240A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1mA @ 20V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: D-67 Supplier Device Package: D-67 Operating Temperature - Junction: -55°C ~ 150°C	pacchetto: D-67	Azione4.304	20V	240A	720mV @ 240A	Fast Recovery =< 500ns, > 200mA (Io)	-	1mA @ 20V	-	Chassis Mount	D-67	D-67	-55°C ~ 150°C
JAN1N6843CCU3	Microsemi Corporation	DIODE GEN PURP 50V 300MA U3 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 300mA Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 6ns Current - Reverse Leakage @ Vr: 500nA @ 75V Capacitance @ Vr, F: 5pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: 3-SMD, No Lead Supplier Device Package: U3 Operating Temperature - Junction: -65°C ~ 175°C	pacchetto: 3-SMD, No Lead	Azione2.848	50V	300mA	1.2V @ 100mA	Fast Recovery =< 500ns, > 200mA (Io)	6ns	500nA @ 75V	5pF @ 0V, 1MHz	Surface Mount	3-SMD, No Lead	U3	-65°C ~ 175°C
R6001430XXYA	Powerex Inc.	DIODE GEN PURP 1.4KV 300A DO205 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1400V Current - Average Rectified (Io): 300A Voltage - Forward (Vf) (Max) @ If: 1.4V @ 800A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 13µs Current - Reverse Leakage @ Vr: 50mA @ 1400V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-205AB, DO-9, Stud Supplier Device Package: DO-205AB, DO-9 Operating Temperature - Junction: -65°C ~ 150°C	pacchetto: DO-205AB, DO-9, Stud	Azione6.896	1400V	300A	1.4V @ 800A	Standard Recovery >500ns, > 200mA (Io)	13µs	50mA @ 1400V	-	Chassis, Stud Mount	DO-205AB, DO-9, Stud	DO-205AB, DO-9	-65°C ~ 150°C
JANTX1N5804URS	Microsemi Corporation	DIODE GEN PURP 100V 1A APKG Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 875mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25ns Current - Reverse Leakage @ Vr: 1µA @ 100V Capacitance @ Vr, F: 25pF @ 10V, 1MHz Mounting Type: Surface Mount Package / Case: SQ-MELF, A Supplier Device Package: A-MELF Operating Temperature - Junction: -65°C ~ 175°C	pacchetto: SQ-MELF, A	Azione5.808	100V	1A	875mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	1µA @ 100V	25pF @ 10V, 1MHz	Surface Mount	SQ-MELF, A	A-MELF	-65°C ~ 175°C
1N5551	Semtech Corporation	D MET 3A STD 400V Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	pacchetto: -	Azione15.240	-	-	-	-	-	-	-	-	-	-	-
SFAF1005G C0G	TSC America Inc.	DIODE, SUPER FAST, 10A, 300V, 35 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 300V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 10A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 10µA @ 300V Capacitance @ Vr, F: 140pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack Supplier Device Package: ITO-220AC Operating Temperature - Junction: -55°C ~ 150°C	pacchetto: TO-220-2 Full Pack	Azione3.536	300V	10A	1.3V @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 300V	140pF @ 4V, 1MHz	Through Hole	TO-220-2 Full Pack	ITO-220AC	-55°C ~ 150°C
MBR1045MFST1G	ON Semiconductor	DIODE SCHOTTKY 45V 10A 5DFN Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 750mV @ 20A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 45V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: 8-PowerTDFN, 5 Leads Supplier Device Package: 5-DFN (5x6) (8-SOFL) Operating Temperature - Junction: -55°C ~ 150°C	pacchetto: 8-PowerTDFN, 5 Leads	Azione7.328	45V	10A	750mV @ 20A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 45V	-	Surface Mount	8-PowerTDFN, 5 Leads	5-DFN (5x6) (8-SOFL)	-55°C ~ 150°C
UGE5JT-E3/45	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 5A TO220AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 1.75V @ 5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25ns Current - Reverse Leakage @ Vr: 30µA @ 600V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 150°C	pacchetto: TO-220-2	Azione2.976	600V	5A	1.75V @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	30µA @ 600V	-	Through Hole	TO-220-2	TO-220AC	-55°C ~ 150°C
10MQ040NTR	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 40V 1.5A SMA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 540mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 40V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: SMA Operating Temperature - Junction: -55°C ~ 150°C	pacchetto: DO-214AC, SMA	Azione1.930.080	40V	1.5A	540mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 40V	-	Surface Mount	DO-214AC, SMA	SMA	-55°C ~ 150°C
RGP10J-E3/73	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 1A DO204AL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 250ns Current - Reverse Leakage @ Vr: 5µA @ 600V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C	pacchetto: DO-204AL, DO-41, Axial	Azione144.000	600V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	250ns	5µA @ 600V	15pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-65°C ~ 175°C
V10KM120DUHM3/H	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 120V 5A DUAL FLAT Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 120V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 890mV @ 5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: 450pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: - Operating Temperature - Junction: -40°C ~ 175°C	pacchetto: 8-PowerTDFN	Azione3.264	120V	10A	890mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	-	450pF @ 4V, 1MHz	Surface Mount	8-PowerTDFN	-	-40°C ~ 175°C
HS3K R7G	TSC America Inc.	DIODE, HIGH EFFICIENT, 3A, 800V, Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.7V @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75ns Current - Reverse Leakage @ Vr: 10µA @ 800V Capacitance @ Vr, F: 50pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB, (SMC) Operating Temperature - Junction: -55°C ~ 150°C	pacchetto: DO-214AB, SMC	Azione3.104	800V	3A	1.7V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	10µA @ 800V	50pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB, (SMC)	-55°C ~ 150°C
SBRT2U45LP-7	Diodes Incorporated	DIODE SBR 45V 2A 3DFN Diode Type: Super Barrier Voltage - DC Reverse (Vr) (Max): 45V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 550mV @ 2A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 45V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: 3-UDFN Supplier Device Package: X1-DFN1411-3 Operating Temperature - Junction: -55°C ~ 150°C	pacchetto: 3-UDFN	Azione7.136	45V	2A	550mV @ 2A	Standard Recovery >500ns, > 200mA (Io)	-	100µA @ 45V	-	Surface Mount	3-UDFN	X1-DFN1411-3	-55°C ~ 150°C
1N4148W-HE3-18	Vishay Semiconductor Diodes Division	DIODE GEN PURP 75V 150MA SOD123 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 75V Current - Average Rectified (Io): 150mA Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4ns Current - Reverse Leakage @ Vr: 100µA @ 100V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SOD-123 Supplier Device Package: SOD-123 Operating Temperature - Junction: -55°C ~ 150°C	pacchetto: SOD-123	Azione5.616	75V	150mA	1.2V @ 100mA	Small Signal =< 200mA (Io), Any Speed	4ns	100µA @ 100V	-	Surface Mount	SOD-123	SOD-123	-55°C ~ 150°C
STTH1R04U	STMicroelectronics	DIODE GEN PURP 400V 1A SMB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.5V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30ns Current - Reverse Leakage @ Vr: 5µA @ 400V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: SMB Operating Temperature - Junction: 175°C (Max)	pacchetto: DO-214AA, SMB	Azione969.240	400V	1A	1.5V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	5µA @ 400V	-	Surface Mount	DO-214AA, SMB	SMB	175°C (Max)
1N2056	Solid State Inc.	DIODE GEN PURP 150V 275A DO9 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 150 V Current - Average Rectified (Io): 275A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 300 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 75 µA @ 150 V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-205AB, DO-9, Stud Supplier Device Package: DO-9 Operating Temperature - Junction: -65°C ~ 190°C	pacchetto: -	Request a Quote	150 V	275A	1.3 V @ 300 A	Standard Recovery >500ns, > 200mA (Io)	-	75 µA @ 150 V	-	Stud Mount	DO-205AB, DO-9, Stud	DO-9	-65°C ~ 190°C
S2KALH	Taiwan Semiconductor Corporation	2A, 800V, STANDARD RECOVERY RECT Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1 µA @ 800 V Capacitance @ Vr, F: 12pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-221AC, SMA Flat Leads Supplier Device Package: Thin SMA Operating Temperature - Junction: -55°C ~ 150°C	pacchetto: -	Azione84.000	800 V	2A	1.1 V @ 2 A	Standard Recovery >500ns, > 200mA (Io)	-	1 µA @ 800 V	12pF @ 4V, 1MHz	Surface Mount	DO-221AC, SMA Flat Leads	Thin SMA	-55°C ~ 150°C
MSASC150W50A	Microchip Technology	DIODE SCHOTTKY 50V 150A THINKEY3 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 50 V Current - Average Rectified (Io): 150A Voltage - Forward (Vf) (Max) @ If: 750 mV @ 150 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1 mA @ 50 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: ThinKey™3 Supplier Device Package: ThinKey™3 Operating Temperature - Junction: -	pacchetto: -	Request a Quote	50 V	150A	750 mV @ 150 A	Fast Recovery =< 500ns, > 200mA (Io)	-	1 mA @ 50 V	-	Surface Mount	ThinKey™3	ThinKey™3	-
JANTXV1N6305R	Microchip Technology	DIODE GEN PURP 100V 70A DO5 Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 70A Voltage - Forward (Vf) (Max) @ If: 1.18 V @ 150 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 60 ns Current - Reverse Leakage @ Vr: 25 µA @ 100 V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-5 (DO-203AB) Operating Temperature - Junction: -65°C ~ 175°C	pacchetto: -	Request a Quote	100 V	70A	1.18 V @ 150 A	Fast Recovery =< 500ns, > 200mA (Io)	60 ns	25 µA @ 100 V	-	Stud Mount	DO-203AB, DO-5, Stud	DO-5 (DO-203AB)	-65°C ~ 175°C
C6D04065A	Wolfspeed, Inc.	DIODE SIL CARB 650V 4A TO220-2 Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 650 V Current - Average Rectified (Io): 4A Voltage - Forward (Vf) (Max) @ If: 1.27 V @ 4 A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220-2 Operating Temperature - Junction: -	pacchetto: -	Azione2.433	650 V	4A	1.27 V @ 4 A	No Recovery Time > 500mA (Io)	0 ns	-	-	Through Hole	TO-220-2	TO-220-2	-
PU3BC	Taiwan Semiconductor Corporation	25NS, 3A, 100V, ULTRA FAST RECOV Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 930 mV @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Current - Reverse Leakage @ Vr: 2 µA @ 100 V Capacitance @ Vr, F: 47pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 175°C	pacchetto: -	Azione9.000	100 V	3A	930 mV @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	25 ns	2 µA @ 100 V	47pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 175°C
ACDBQC70-HF	Comchip Technology	DIODE SCHOTTKY 70V 70MA 0402C Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 70 V Current - Average Rectified (Io): 70mA Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 5 ns Current - Reverse Leakage @ Vr: 100 nA @ 50 V Capacitance @ Vr, F: 2pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: 0402 (1006 Metric) Supplier Device Package: 0402C/SOD-923F Operating Temperature - Junction: -65°C ~ 125°C	pacchetto: -	Azione7.980	70 V	70mA	1 V @ 15 mA	Small Signal =< 200mA (Io), Any Speed	5 ns	100 nA @ 50 V	2pF @ 1V, 1MHz	Surface Mount	0402 (1006 Metric)	0402C/SOD-923F	-65°C ~ 125°C
JANTXV1N6941UTK3AS-TR	Microchip Technology	DIODE SCHOTTKY 30V 150A THINKEY3 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30 V Current - Average Rectified (Io): 150A Voltage - Forward (Vf) (Max) @ If: 500 mV @ 50 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5 mA @ 30 V Capacitance @ Vr, F: 7500pF @ 5V, 1MHz Mounting Type: Surface Mount Package / Case: ThinKey™3 Supplier Device Package: ThinKey™3 Operating Temperature - Junction: -65°C ~ 175°C	pacchetto: -	Request a Quote	30 V	150A	500 mV @ 50 A	Fast Recovery =< 500ns, > 200mA (Io)	-	5 mA @ 30 V	7500pF @ 5V, 1MHz	Surface Mount	ThinKey™3	ThinKey™3	-65°C ~ 175°C
US1DH	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 1A DO214AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: 5 µA @ 200 V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C	pacchetto: -	Azione45.000	200 V	1A	1 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	5 µA @ 200 V	15pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
MURD1040C-TP	Micro Commercial Co	Interface Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 10 µA @ 400 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63 Supplier Device Package: TO-252 (DPAK) Operating Temperature - Junction: -55°C ~ 150°C	pacchetto: -	Request a Quote	400 V	10A	1.5 V @ 10 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	10 µA @ 400 V	-	Surface Mount	TO-252-3, DPAK (2 Leads + Tab), SC-63	TO-252 (DPAK)	-55°C ~ 150°C
RF05VYM1SFHTR	Rohm Semiconductor	DIODE GEN PURP 100V 500MA TUMD2M Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 500mA Voltage - Forward (Vf) (Max) @ If: 980 mV @ 500 mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Current - Reverse Leakage @ Vr: 10 µA @ 100 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: 2-SMD, Flat Lead Supplier Device Package: TUMD2M Operating Temperature - Junction: 150°C (Max)	pacchetto: -	Azione38.580	100 V	500mA	980 mV @ 500 mA	Fast Recovery =< 500ns, > 200mA (Io)	25 ns	10 µA @ 100 V	-	Surface Mount	2-SMD, Flat Lead	TUMD2M	150°C (Max)
CDLL5820-TR	Microchip Technology	SMALL-SIGNAL SCHOTTKY Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	pacchetto: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
D405N26EXPSA1	Infineon Technologies	RECTIFIER DIODE DISC Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	pacchetto: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
JAN1N647UR-1	Microchip Technology	DIODE GP 400V 400MA DO213AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 400mA Voltage - Forward (Vf) (Max) @ If: 1 V @ 400 mA Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-213AA Supplier Device Package: DO-213AA Operating Temperature - Junction: -65°C ~ 175°C	pacchetto: -	Request a Quote	400 V	400mA	1 V @ 400 mA	Standard Recovery >500ns, > 200mA (Io)	-	-	-	Surface Mount	DO-213AA	DO-213AA	-65°C ~ 175°C
CGRB206-HF	Comchip Technology	DIODE GEN PURP 800V 2A DO214AA S Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5 µA @ 800 V Capacitance @ Vr, F: 10pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: SMB/DO-214AA Operating Temperature - Junction: -55°C ~ 150°C	pacchetto: -	Request a Quote	800 V	2A	1.1 V @ 2 A	Standard Recovery >500ns, > 200mA (Io)	-	5 µA @ 800 V	10pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	SMB/DO-214AA	-55°C ~ 150°C

MBRH24020

GeneSiC Semiconductor

DIODE SCHOTTKY 20V 240A D67

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 20V
Current - Average Rectified (Io): 240A
Voltage - Forward (Vf) (Max) @ If: 720mV @ 240A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1mA @ 20V
Capacitance @ Vr, F: -
Mounting Type: Chassis Mount
Package / Case: D-67
Supplier Device Package: D-67
Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: D-67

Azione4.304

20V

240A

720mV @ 240A

Fast Recovery =< 500ns, > 200mA (Io)

-

1mA @ 20V

-

Chassis Mount

D-67

-55°C ~ 150°C

JAN1N6843CCU3

Microsemi Corporation

DIODE GEN PURP 50V 300MA U3

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 300mA
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 6ns
Current - Reverse Leakage @ Vr: 500nA @ 75V
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: 3-SMD, No Lead
Supplier Device Package: U3
Operating Temperature - Junction: -65°C ~ 175°C

pacchetto: 3-SMD, No Lead

Azione2.848

50V

300mA

1.2V @ 100mA

Fast Recovery =< 500ns, > 200mA (Io)

6ns

500nA @ 75V

5pF @ 0V, 1MHz

Surface Mount

3-SMD, No Lead

U3

-65°C ~ 175°C

R6001430XXYA

Powerex Inc.

DIODE GEN PURP 1.4KV 300A DO205

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1400V
Current - Average Rectified (Io): 300A
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 800A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 13µs
Current - Reverse Leakage @ Vr: 50mA @ 1400V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-205AB, DO-9, Stud
Supplier Device Package: DO-205AB, DO-9
Operating Temperature - Junction: -65°C ~ 150°C

pacchetto: DO-205AB, DO-9, Stud

Azione6.896

1400V

300A

1.4V @ 800A

Standard Recovery >500ns, > 200mA (Io)

13µs

50mA @ 1400V

-

Chassis, Stud Mount

DO-205AB, DO-9, Stud

DO-205AB, DO-9

-65°C ~ 150°C

JANTX1N5804URS

Microsemi Corporation

DIODE GEN PURP 100V 1A APKG

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 875mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25ns
Current - Reverse Leakage @ Vr: 1µA @ 100V
Capacitance @ Vr, F: 25pF @ 10V, 1MHz
Mounting Type: Surface Mount
Package / Case: SQ-MELF, A
Supplier Device Package: A-MELF
Operating Temperature - Junction: -65°C ~ 175°C

pacchetto: SQ-MELF, A

Azione5.808

100V

1A

875mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

25ns

1µA @ 100V

25pF @ 10V, 1MHz

Surface Mount

SQ-MELF, A

A-MELF

-65°C ~ 175°C

1N5551

Semtech Corporation

D MET 3A STD 400V

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

pacchetto: -

Azione15.240

-

SFAF1005G C0G

TSC America Inc.

DIODE, SUPER FAST, 10A, 300V, 35

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 300V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 10A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 10µA @ 300V
Capacitance @ Vr, F: 140pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: TO-220-2 Full Pack

Azione3.536

300V

10A

1.3V @ 10A

Fast Recovery =< 500ns, > 200mA (Io)

35ns

10µA @ 300V

140pF @ 4V, 1MHz

Through Hole

TO-220-2 Full Pack

ITO-220AC

-55°C ~ 150°C

MBR1045MFST1G

ON Semiconductor

DIODE SCHOTTKY 45V 10A 5DFN

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 45V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 750mV @ 20A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 45V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: 8-PowerTDFN, 5 Leads

Azione7.328

45V

10A

750mV @ 20A

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 45V

-

Surface Mount

8-PowerTDFN, 5 Leads

5-DFN (5x6) (8-SOFL)

-55°C ~ 150°C

UGE5JT-E3/45

Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 5A TO220AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 1.75V @ 5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25ns
Current - Reverse Leakage @ Vr: 30µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: TO-220-2

Azione2.976

600V

5A

1.75V @ 5A

Fast Recovery =< 500ns, > 200mA (Io)

25ns

30µA @ 600V

-

Through Hole

TO-220-2

TO-220AC

-55°C ~ 150°C

10MQ040NTR

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 40V 1.5A SMA

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 1.5A
Voltage - Forward (Vf) (Max) @ If: 540mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 40V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: SMA
Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: DO-214AC, SMA

Azione1.930.080

40V

1.5A

540mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 40V

-

Surface Mount

DO-214AC, SMA

SMA

-55°C ~ 150°C

RGP10J-E3/73

Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 1A DO204AL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250ns
Current - Reverse Leakage @ Vr: 5µA @ 600V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C

pacchetto: DO-204AL, DO-41, Axial

Azione144.000

600V

1A

1.3V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

250ns

5µA @ 600V

15pF @ 4V, 1MHz

Through Hole

DO-204AL, DO-41, Axial

DO-204AL (DO-41)

-65°C ~ 175°C

V10KM120DUHM3/H

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 120V 5A DUAL FLAT

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 120V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 890mV @ 5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: 450pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: -
Operating Temperature - Junction: -40°C ~ 175°C

pacchetto: 8-PowerTDFN

Azione3.264

120V

10A

890mV @ 5A

Fast Recovery =< 500ns, > 200mA (Io)

-

450pF @ 4V, 1MHz

Surface Mount

8-PowerTDFN

-

-40°C ~ 175°C

HS3K R7G

TSC America Inc.

DIODE, HIGH EFFICIENT, 3A, 800V,

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75ns
Current - Reverse Leakage @ Vr: 10µA @ 800V
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB, (SMC)
Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: DO-214AB, SMC

Azione3.104

800V

3A

1.7V @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

75ns

10µA @ 800V

50pF @ 4V, 1MHz

Surface Mount

DO-214AB, SMC

DO-214AB, (SMC)

-55°C ~ 150°C

SBRT2U45LP-7

Diodes Incorporated

DIODE SBR 45V 2A 3DFN

Diode Type: Super Barrier
Voltage - DC Reverse (Vr) (Max): 45V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 550mV @ 2A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100µA @ 45V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: 3-UDFN
Supplier Device Package: X1-DFN1411-3
Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: 3-UDFN

Azione7.136

45V

2A

550mV @ 2A

Standard Recovery >500ns, > 200mA (Io)

-

100µA @ 45V

-

Surface Mount

3-UDFN

X1-DFN1411-3

-55°C ~ 150°C

1N4148W-HE3-18

Vishay Semiconductor Diodes Division

DIODE GEN PURP 75V 150MA SOD123

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 75V
Current - Average Rectified (Io): 150mA
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4ns
Current - Reverse Leakage @ Vr: 100µA @ 100V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SOD-123
Supplier Device Package: SOD-123
Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: SOD-123

Azione5.616

75V

150mA

1.2V @ 100mA

Small Signal =< 200mA (Io), Any Speed

4ns

100µA @ 100V

-

Surface Mount

SOD-123

-55°C ~ 150°C

STTH1R04U

STMicroelectronics

DIODE GEN PURP 400V 1A SMB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30ns
Current - Reverse Leakage @ Vr: 5µA @ 400V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: SMB
Operating Temperature - Junction: 175°C (Max)

pacchetto: DO-214AA, SMB

Azione969.240

400V

1A

1.5V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

30ns

5µA @ 400V

-

Surface Mount

DO-214AA, SMB

SMB

175°C (Max)

1N2056

Solid State Inc.

DIODE GEN PURP 150V 275A DO9

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 150 V
Current - Average Rectified (Io): 275A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 300 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 75 µA @ 150 V
Capacitance @ Vr, F: -
Mounting Type: Stud Mount
Package / Case: DO-205AB, DO-9, Stud
Supplier Device Package: DO-9
Operating Temperature - Junction: -65°C ~ 190°C

pacchetto: -

Request a Quote

150 V

275A

1.3 V @ 300 A

Standard Recovery >500ns, > 200mA (Io)

-

75 µA @ 150 V

-

Stud Mount

DO-205AB, DO-9, Stud

DO-9

-65°C ~ 190°C

S2KALH

Taiwan Semiconductor Corporation

2A, 800V, STANDARD RECOVERY RECT

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800 V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-221AC, SMA Flat Leads
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: -

Azione84.000

800 V

2A

1.1 V @ 2 A

Standard Recovery >500ns, > 200mA (Io)

-

1 µA @ 800 V

12pF @ 4V, 1MHz

Surface Mount

DO-221AC, SMA Flat Leads

Thin SMA

-55°C ~ 150°C

MSASC150W50A

Microchip Technology

DIODE SCHOTTKY 50V 150A THINKEY3

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 50 V
Current - Average Rectified (Io): 150A
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 150 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1 mA @ 50 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: ThinKey™3
Supplier Device Package: ThinKey™3
Operating Temperature - Junction: -

pacchetto: -

Request a Quote

50 V

150A

750 mV @ 150 A

Fast Recovery =< 500ns, > 200mA (Io)

-

1 mA @ 50 V

-

Surface Mount

ThinKey™3

-

JANTXV1N6305R

Microchip Technology

DIODE GEN PURP 100V 70A DO5

Diode Type: Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): 70A
Voltage - Forward (Vf) (Max) @ If: 1.18 V @ 150 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Current - Reverse Leakage @ Vr: 25 µA @ 100 V
Capacitance @ Vr, F: -
Mounting Type: Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-5 (DO-203AB)
Operating Temperature - Junction: -65°C ~ 175°C

pacchetto: -

Request a Quote

100 V

70A

1.18 V @ 150 A

Fast Recovery =< 500ns, > 200mA (Io)

60 ns

25 µA @ 100 V

-

Stud Mount

DO-203AB, DO-5, Stud

DO-5 (DO-203AB)

-65°C ~ 175°C

C6D04065A

Wolfspeed, Inc.

DIODE SIL CARB 650V 4A TO220-2

Diode Type: SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Average Rectified (Io): 4A
Voltage - Forward (Vf) (Max) @ If: 1.27 V @ 4 A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -

pacchetto: -

Azione2.433

650 V

4A

1.27 V @ 4 A

No Recovery Time > 500mA (Io)

0 ns

-

Through Hole

TO-220-2

-

PU3BC

Taiwan Semiconductor Corporation

25NS, 3A, 100V, ULTRA FAST RECOV

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 3 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Capacitance @ Vr, F: 47pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 175°C

pacchetto: -

Azione9.000

100 V

3A

930 mV @ 3 A

Fast Recovery =< 500ns, > 200mA (Io)

25 ns

2 µA @ 100 V

47pF @ 4V, 1MHz

Surface Mount

DO-214AB, SMC

DO-214AB (SMC)

-55°C ~ 175°C

ACDBQC70-HF

Comchip Technology

DIODE SCHOTTKY 70V 70MA 0402C

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 70 V
Current - Average Rectified (Io): 70mA
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Capacitance @ Vr, F: 2pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: 0402 (1006 Metric)
Supplier Device Package: 0402C/SOD-923F
Operating Temperature - Junction: -65°C ~ 125°C

pacchetto: -

Azione7.980

70 V

70mA

1 V @ 15 mA

Small Signal =< 200mA (Io), Any Speed

5 ns

100 nA @ 50 V

2pF @ 1V, 1MHz

Surface Mount

0402 (1006 Metric)

0402C/SOD-923F

-65°C ~ 125°C

JANTXV1N6941UTK3AS-TR

Microchip Technology

DIODE SCHOTTKY 30V 150A THINKEY3

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30 V
Current - Average Rectified (Io): 150A
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 50 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5 mA @ 30 V
Capacitance @ Vr, F: 7500pF @ 5V, 1MHz
Mounting Type: Surface Mount
Package / Case: ThinKey™3
Supplier Device Package: ThinKey™3
Operating Temperature - Junction: -65°C ~ 175°C

pacchetto: -

Request a Quote

30 V

150A

500 mV @ 50 A

Fast Recovery =< 500ns, > 200mA (Io)

-

5 mA @ 30 V

7500pF @ 5V, 1MHz

Surface Mount

ThinKey™3

-65°C ~ 175°C

US1DH

Taiwan Semiconductor Corporation

DIODE GEN PURP 200V 1A DO214AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: -

Azione45.000

200 V

1A

1 V @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

50 ns

5 µA @ 200 V

15pF @ 4V, 1MHz

Surface Mount

DO-214AC, SMA

DO-214AC (SMA)

-55°C ~ 150°C

MURD1040C-TP

Micro Commercial Co

Interface

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400 V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
Supplier Device Package: TO-252 (DPAK)
Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: -

Request a Quote

400 V

10A

1.5 V @ 10 A

Fast Recovery =< 500ns, > 200mA (Io)

35 ns

10 µA @ 400 V

-

Surface Mount

TO-252-3, DPAK (2 Leads + Tab), SC-63

TO-252 (DPAK)

-55°C ~ 150°C

RF05VYM1SFHTR

Rohm Semiconductor

DIODE GEN PURP 100V 500MA TUMD2M

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): 500mA
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 500 mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Lead
Supplier Device Package: TUMD2M
Operating Temperature - Junction: 150°C (Max)

pacchetto: -

Azione38.580

100 V

500mA

980 mV @ 500 mA

Fast Recovery =< 500ns, > 200mA (Io)

25 ns

10 µA @ 100 V

-

Surface Mount

2-SMD, Flat Lead

TUMD2M

150°C (Max)

CDLL5820-TR

Microchip Technology

SMALL-SIGNAL SCHOTTKY

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

pacchetto: -

Request a Quote

-

D405N26EXPSA1

Infineon Technologies

RECTIFIER DIODE DISC

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

pacchetto: -

Request a Quote

-

JAN1N647UR-1

Microchip Technology

DIODE GP 400V 400MA DO213AA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400 V
Current - Average Rectified (Io): 400mA
Voltage - Forward (Vf) (Max) @ If: 1 V @ 400 mA
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-213AA
Supplier Device Package: DO-213AA
Operating Temperature - Junction: -65°C ~ 175°C

pacchetto: -

Request a Quote

400 V

400mA

1 V @ 400 mA

Standard Recovery >500ns, > 200mA (Io)

-

Surface Mount

DO-213AA

-65°C ~ 175°C

CGRB206-HF

Comchip Technology

DIODE GEN PURP 800V 2A DO214AA S

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800 V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: SMB/DO-214AA
Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: -

Request a Quote

800 V

2A

1.1 V @ 2 A

Standard Recovery >500ns, > 200mA (Io)

-

5 µA @ 800 V

10pF @ 4V, 1MHz

Surface Mount

DO-214AA, SMB

SMB/DO-214AA

-55°C ~ 150°C