Pagina 301 - Diodi - Raddrizzatori - Singoli | Dispositivi a semiconduttore discreti | Heisener Electronics
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Diodi - Raddrizzatori - Singoli

Record 30.120
Pagina  301/1.004
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
Azione
Quantità
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
RGP10M-5304M3/54
Vishay Semiconductor Diodes Division

DIODE GEN PURPOSE DO-204AL

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
pacchetto: -
Azione2.640
-
-
-
-
-
-
-
-
-
-
-
GP10G-7010M3/73
Vishay Semiconductor Diodes Division

DIODE GEN PURPOSE DO204AL

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
pacchetto: -
Azione4.832
-
-
-
-
-
-
-
-
-
-
-
hot VS-20MQ060NPBF
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 60V 2A DO214AC

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 60V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 780mV @ 2A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 50µA @ 600V
  • Capacitance @ Vr, F: 31pF @ 10V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: DO-214AC (SMA)
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: DO-214AC, SMA
Azione270.960
60V
2A
780mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
-
50µA @ 600V
31pF @ 10V, 1MHz
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C
SPV1001T40
STMicroelectronics

DIODE GEN PURP 40V 16A TO220AB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 40V
  • Current - Average Rectified (Io): 16A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 920mV @ 8A
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1µA @ 40V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
  • Operating Temperature - Junction: -45°C ~ 175°C
pacchetto: TO-220-3
Azione6.160
40V
16A (DC)
920mV @ 8A
-
-
1µA @ 40V
-
Through Hole
TO-220-3
TO-220AB
-45°C ~ 175°C
RS1B/11
Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 1A DO214AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 150ns
  • Current - Reverse Leakage @ Vr: 5µA @ 100V
  • Capacitance @ Vr, F: 10pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: DO-214AC (SMA)
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: DO-214AC, SMA
Azione6.512
100V
1A
1.3V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 100V
10pF @ 4V, 1MHz
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C
hot 15ETX06FP
Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 15A TO220FP

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 15A
  • Voltage - Forward (Vf) (Max) @ If: 3.2V @ 15A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 32ns
  • Current - Reverse Leakage @ Vr: 50µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2 Full Pack
  • Supplier Device Package: TO-220-2 Full Pack
  • Operating Temperature - Junction: -65°C ~ 175°C
pacchetto: TO-220-2 Full Pack
Azione6.880
600V
15A
3.2V @ 15A
Fast Recovery =< 500ns, > 200mA (Io)
32ns
50µA @ 600V
-
Through Hole
TO-220-2 Full Pack
TO-220-2 Full Pack
-65°C ~ 175°C
hot 183NQ100R
Vishay Semiconductor Diodes Division

DIODE MODULE 100V 180A HALF-PAK

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 180A
  • Voltage - Forward (Vf) (Max) @ If: 950mV @ 180A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 4.5mA @ 100V
  • Capacitance @ Vr, F: 4150pF @ 5V, 1MHz
  • Mounting Type: Chassis Mount
  • Package / Case: D-67 HALF-PAK
  • Supplier Device Package: HALF-PAK
  • Operating Temperature - Junction: -
pacchetto: D-67 HALF-PAK
Azione14.388
100V
180A
950mV @ 180A
Fast Recovery =< 500ns, > 200mA (Io)
-
4.5mA @ 100V
4150pF @ 5V, 1MHz
Chassis Mount
D-67 HALF-PAK
HALF-PAK
-
VS-SD703C20S20L
Vishay Semiconductor Diodes Division

DIODE MODULE 2KV 700A DO200AB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 2000V
  • Current - Average Rectified (Io): 700A
  • Voltage - Forward (Vf) (Max) @ If: 2.2V @ 1500A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 2µs
  • Current - Reverse Leakage @ Vr: 50mA @ 2000V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: DO-200AB, B-PUK
  • Supplier Device Package: DO-200AB, B-PUK
  • Operating Temperature - Junction: -
pacchetto: DO-200AB, B-PUK
Azione5.632
2000V
700A
2.2V @ 1500A
Standard Recovery >500ns, > 200mA (Io)
2µs
50mA @ 2000V
-
Chassis Mount
DO-200AB, B-PUK
DO-200AB, B-PUK
-
MBR1650HC0G
TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 16A,

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 50V
  • Current - Average Rectified (Io): 16A
  • Voltage - Forward (Vf) (Max) @ If: 750mV @ 16A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500µA @ 50V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220AC
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: TO-220-2
Azione3.632
50V
16A
750mV @ 16A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 50V
-
Through Hole
TO-220-2
TO-220AC
-55°C ~ 150°C
VS-6EWX06FNHM3
Vishay Semiconductor Diodes Division

DIODE HYPERFAST 600V 6A DPAK

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 6A
  • Voltage - Forward (Vf) (Max) @ If: 3.1V @ 6A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 19ns
  • Current - Reverse Leakage @ Vr: 20µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: D-PAK (TO-252AA)
  • Operating Temperature - Junction: -65°C ~ 175°C
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63
Azione7.824
600V
6A
3.1V @ 6A
Fast Recovery =< 500ns, > 200mA (Io)
19ns
20µA @ 600V
-
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
D-PAK (TO-252AA)
-65°C ~ 175°C
VS-30WQ04FNTRLHM3
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY DPAK

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40V
  • Current - Average Rectified (Io): 3.5A
  • Voltage - Forward (Vf) (Max) @ If: 530mV @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 2mA @ 40V
  • Capacitance @ Vr, F: 189pF @ 5V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: D-PAK (TO-252AA)
  • Operating Temperature - Junction: -40°C ~ 150°C
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63
Azione4.736
40V
3.5A
530mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
2mA @ 40V
189pF @ 5V, 1MHz
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
D-PAK (TO-252AA)
-40°C ~ 150°C
AR3PD-M3/86A
Vishay Semiconductor Diodes Division

DIODE AVALANCHE 200V 1.8A TO277A

  • Diode Type: Avalanche
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 1.8A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.6V @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 140ns
  • Current - Reverse Leakage @ Vr: 10µA @ 200V
  • Capacitance @ Vr, F: 44pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-277, 3-PowerDFN
  • Supplier Device Package: TO-277A (SMPC)
  • Operating Temperature - Junction: -55°C ~ 175°C
pacchetto: TO-277, 3-PowerDFN
Azione3.200
200V
1.8A (DC)
1.6V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
140ns
10µA @ 200V
44pF @ 4V, 1MHz
Surface Mount
TO-277, 3-PowerDFN
TO-277A (SMPC)
-55°C ~ 175°C
SBRT4U60LP-7
Diodes Incorporated

DIODE SBR 60V 4A U-DFN3030-8

  • Diode Type: Super Barrier
  • Voltage - DC Reverse (Vr) (Max): 60V
  • Current - Average Rectified (Io): 4A
  • Voltage - Forward (Vf) (Max) @ If: 520mV @ 4A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 150µA @ 60V
  • Capacitance @ Vr, F: 180pF @ 5V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerUDFN
  • Supplier Device Package: U-DFN3030-8
  • Operating Temperature - Junction: -55°C ~ 175°C
pacchetto: 8-PowerUDFN
Azione2.688
60V
4A
520mV @ 4A
Standard Recovery >500ns, > 200mA (Io)
-
150µA @ 60V
180pF @ 5V, 1MHz
Surface Mount
8-PowerUDFN
U-DFN3030-8
-55°C ~ 175°C
RS3JHE3_A/H
Vishay Semiconductor Diodes Division

DIODE FAST REC 600V 3A DO214AB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 2.5A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 250ns
  • Current - Reverse Leakage @ Vr: 10µA @ 600V
  • Capacitance @ Vr, F: 34pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: DO-214AB, (SMC)
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: DO-214AB, SMC
Azione3.280
600V
3A
1.3V @ 2.5A
Fast Recovery =< 500ns, > 200mA (Io)
250ns
10µA @ 600V
34pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB, (SMC)
-55°C ~ 150°C
AU1PMHM3/85A
Vishay Semiconductor Diodes Division

DIODE AVALANCHE 1000V 1A DO220AA

  • Diode Type: Avalanche
  • Voltage - DC Reverse (Vr) (Max): 1000V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.85V @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 75ns
  • Current - Reverse Leakage @ Vr: 1µA @ 1000V
  • Capacitance @ Vr, F: 7.5pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-220AA
  • Supplier Device Package: DO-220AA (SMP)
  • Operating Temperature - Junction: -55°C ~ 175°C
pacchetto: DO-220AA
Azione4.816
1000V
1A
1.85V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
1µA @ 1000V
7.5pF @ 4V, 1MHz
Surface Mount
DO-220AA
DO-220AA (SMP)
-55°C ~ 175°C
SE30AFD-M3/6B
Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 1.4A DO221AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 1.4A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 1.5µs
  • Current - Reverse Leakage @ Vr: 10µA @ 200V
  • Capacitance @ Vr, F: 19pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-221AC, SMA Flat Leads
  • Supplier Device Package: DO-221AC
  • Operating Temperature - Junction: -55°C ~ 175°C
pacchetto: DO-221AC, SMA Flat Leads
Azione6.352
200V
1.4A (DC)
1.1V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
1.5µs
10µA @ 200V
19pF @ 4V, 1MHz
Surface Mount
DO-221AC, SMA Flat Leads
DO-221AC
-55°C ~ 175°C
hot RB168M-60TR
Rohm Semiconductor

DIODE SCHOTTKY 60V 1A PMDU

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 60V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 680mV @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1.5µA @ 60V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123F
  • Supplier Device Package: PMDU
  • Operating Temperature - Junction: 150°C (Max)
pacchetto: SOD-123F
Azione150.000
60V
1A
680mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
1.5µA @ 60V
-
Surface Mount
SOD-123F
PMDU
150°C (Max)
UG1C-M3/54
Vishay Semiconductor Diodes Division

DIODE 1A 150V 15NS DO-204AL

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 150V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 950mV @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 25ns
  • Current - Reverse Leakage @ Vr: 5µA @ 150V
  • Capacitance @ Vr, F: 7pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-204AL (DO-41)
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: DO-204AL, DO-41, Axial
Azione2.432
150V
1A
950mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
25ns
5µA @ 150V
7pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 150°C
SDT40A100CT
Diodes Incorporated

SCHOTTKY RECTIFIER TO220AB

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 20A
  • Voltage - Forward (Vf) (Max) @ If: 720mV @ 20A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 120µA @ 100V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: TO-220-3
Azione6.036
100V
20A
720mV @ 20A
Fast Recovery =< 500ns, > 200mA (Io)
-
120µA @ 100V
-
Through Hole
TO-220-3
TO-220AB
-55°C ~ 150°C
hot GL41A-E3/96
Vishay Semiconductor Diodes Division

DIODE GEN PURP 50V 1A DO213AB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 50V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10µA @ 50V
  • Capacitance @ Vr, F: 8pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-213AB, MELF (Glass)
  • Supplier Device Package: DO-213AB
  • Operating Temperature - Junction: -65°C ~ 175°C
pacchetto: DO-213AB, MELF (Glass)
Azione396.000
50V
1A
1.1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
-
10µA @ 50V
8pF @ 4V, 1MHz
Surface Mount
DO-213AB, MELF (Glass)
DO-213AB
-65°C ~ 175°C
hot SS10P6-M3/86A
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 60V 7A TO277A

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 60V
  • Current - Average Rectified (Io): 7A
  • Voltage - Forward (Vf) (Max) @ If: 550mV @ 7A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 150µA @ 60V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-277, 3-PowerDFN
  • Supplier Device Package: TO-277A (SMPC)
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: TO-277, 3-PowerDFN
Azione597.660
60V
7A
550mV @ 7A
Fast Recovery =< 500ns, > 200mA (Io)
-
150µA @ 60V
-
Surface Mount
TO-277, 3-PowerDFN
TO-277A (SMPC)
-55°C ~ 150°C
PMEG4005AEV,115
Nexperia USA Inc.

DIODE SCHOTTKY 40V 500MA SOT666

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40V
  • Current - Average Rectified (Io): 500mA (DC)
  • Voltage - Forward (Vf) (Max) @ If: 470mV @ 500mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100µA @ 40V
  • Capacitance @ Vr, F: 50pF @ 1V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-666
  • Operating Temperature - Junction: -65°C ~ 150°C
pacchetto: SOT-563, SOT-666
Azione3.232
40V
500mA (DC)
470mV @ 500mA
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 40V
50pF @ 1V, 1MHz
Surface Mount
SOT-563, SOT-666
SOT-666
-65°C ~ 150°C
BAS16E6433HTMA1
Infineon Technologies

DIODE GEN PURP 80V 250MA SOT23-3

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 80V
  • Current - Average Rectified (Io): 250mA (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 4ns
  • Current - Reverse Leakage @ Vr: 1µA @ 75V
  • Capacitance @ Vr, F: 2pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: PG-SOT23-3
  • Operating Temperature - Junction: 150°C (Max)
pacchetto: TO-236-3, SC-59, SOT-23-3
Azione5.872
80V
250mA (DC)
1.25V @ 150mA
Fast Recovery =< 500ns, > 200mA (Io)
4ns
1µA @ 75V
2pF @ 0V, 1MHz
Surface Mount
TO-236-3, SC-59, SOT-23-3
PG-SOT23-3
150°C (Max)
RL 2V
Sanken

DIODE GEN PURP 400V 2A AXIAL

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 2A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50ns
  • Current - Reverse Leakage @ Vr: 10µA @ 400V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: Axial
  • Supplier Device Package: -
  • Operating Temperature - Junction: -40°C ~ 150°C
pacchetto: Axial
Azione6.768
400V
2A
1.3V @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
10µA @ 400V
-
Through Hole
Axial
-
-40°C ~ 150°C
BAV303-TR
Vishay Semiconductor Diodes Division

DIODE GEN 200V 250MA MICROMELF

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 250mA (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50ns
  • Current - Reverse Leakage @ Vr: 100nA @ 200V
  • Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: 2-SMD, No Lead
  • Supplier Device Package: MicroMELF
  • Operating Temperature - Junction: 175°C (Max)
pacchetto: 2-SMD, No Lead
Azione25.398
200V
250mA (DC)
1V @ 100mA
Fast Recovery =< 500ns, > 200mA (Io)
50ns
100nA @ 200V
1.5pF @ 0V, 1MHz
Surface Mount
2-SMD, No Lead
MicroMELF
175°C (Max)
VS-1N1186
Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 35A DO203AB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 35A
  • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 110A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10mA @ 200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis, Stud Mount
  • Package / Case: DO-203AB, DO-5, Stud
  • Supplier Device Package: DO-203AB
  • Operating Temperature - Junction: -65°C ~ 190°C
pacchetto: DO-203AB, DO-5, Stud
Azione7.764
200V
35A
1.7V @ 110A
Standard Recovery >500ns, > 200mA (Io)
-
10mA @ 200V
-
Chassis, Stud Mount
DO-203AB, DO-5, Stud
DO-203AB
-65°C ~ 190°C
VS-MBRB745PBF
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 45V 7.5A D2PAK

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 45V
  • Current - Average Rectified (Io): 7.5A
  • Voltage - Forward (Vf) (Max) @ If: 840mV @ 7.5A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100µA @ 45V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
  • Operating Temperature - Junction: -65°C ~ 150°C
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Azione18.354
45V
7.5A
840mV @ 7.5A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 45V
-
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
-65°C ~ 150°C
hot SDM20U40-7
Diodes Incorporated

DIODE SCHOTTKY 40V 250MA SOD523

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40V
  • Current - Average Rectified (Io): 250mA (DC)
  • Voltage - Forward (Vf) (Max) @ If: 600mV @ 200mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 10ns
  • Current - Reverse Leakage @ Vr: 5µA @ 30V
  • Capacitance @ Vr, F: 50pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SC-79, SOD-523
  • Supplier Device Package: SOD-523
  • Operating Temperature - Junction: -65°C ~ 125°C
pacchetto: SC-79, SOD-523
Azione9.236.196
40V
250mA (DC)
600mV @ 200mA
Fast Recovery =< 500ns, > 200mA (Io)
10ns
5µA @ 30V
50pF @ 0V, 1MHz
Surface Mount
SC-79, SOD-523
SOD-523
-65°C ~ 125°C
hot BAS116LP3-7
Diodes Incorporated

DIODE GEN PURP 85V 215MA 2DFN

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 85V
  • Current - Average Rectified (Io): 215mA (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.35V @ 150mA
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 3µs
  • Current - Reverse Leakage @ Vr: 10nA @ 75V
  • Capacitance @ Vr, F: 3pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: 2-XFDFN
  • Supplier Device Package: 2-X3-DFN0603
  • Operating Temperature - Junction: -65°C ~ 150°C
pacchetto: 2-XFDFN
Azione114.480
85V
215mA (DC)
1.35V @ 150mA
Standard Recovery >500ns, > 200mA (Io)
3µs
10nA @ 75V
3pF @ 0V, 1MHz
Surface Mount
2-XFDFN
2-X3-DFN0603
-65°C ~ 150°C
hot 1N4448WT
Fairchild/ON Semiconductor

DIODE GEN PURP 75V 200MA SOD523F

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 75V
  • Current - Average Rectified (Io): 200mA
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 4ns
  • Current - Reverse Leakage @ Vr: 5µA @ 75V
  • Capacitance @ Vr, F: 4pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SC-79, SOD-523F
  • Supplier Device Package: SOD-523F
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: SC-79, SOD-523F
Azione96.000
75V
200mA
1V @ 100mA
Small Signal =< 200mA (Io), Any Speed
4ns
5µA @ 75V
4pF @ 0V, 1MHz
Surface Mount
SC-79, SOD-523F
SOD-523F
-55°C ~ 150°C