Immagine |
Numero di parte |
Produttore |
Descrizione |
pacchetto |
Azione |
Quantità |
Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Mounting Type | Package / Case | Supplier Device Package | Operating Temperature - Junction |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 60V 10A L-FLAT
|
pacchetto: L-FLAT? |
Azione7.472 |
|
60V | 10A (DC) | 0.58V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 60V | 345pF @ 10V, 1MHz | Surface Mount | L-FLAT? | L-FLAT? (4x5.5) | -40°C ~ 125°C |
||
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY ITO-220AC
|
pacchetto: - |
Azione3.504 |
|
- | - | - | - | - | - | - | - | - | - | - |
||
Microsemi Corporation |
DIODE GEN PURP 200V 15A DO203AA
|
pacchetto: DO-203AA, DO-4, Stud |
Azione2.480 |
|
200V | 15A | 1.5V @ 15A | Standard Recovery >500ns, > 200mA (Io) | - | 50µA @ 200V | - | Chassis, Stud Mount | DO-203AA, DO-4, Stud | DO-203AA (DO-4) | -65°C ~ 175°C |
||
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 40V 5.5A DPAK
|
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Azione5.392 |
|
40V | 5.5A | 510mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 3mA @ 40V | 405pF @ 5V, 1MHz | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252AA) | -40°C ~ 150°C |
||
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 700MA DO220
|
pacchetto: DO-220AA |
Azione3.264 |
|
600V | 700mA | 1.05V @ 700mA | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 600V | 5pF @ 4V, 1MHz | Surface Mount | DO-220AA | DO-220AA (SMP) | -55°C ~ 175°C |
||
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 60V 3A DO204AC
|
pacchetto: DO-204AC, DO-15, Axial |
Azione5.760 |
|
60V | 3A | 700mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 60V | - | Through Hole | DO-204AC, DO-15, Axial | DO-204AC (DO-15) | -65°C ~ 150°C |
||
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 1A DO220AA
|
pacchetto: DO-220AA |
Azione4.160 |
|
400V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 1.8µs | 1µA @ 400V | 6pF @ 4V, 1MHz | Surface Mount | DO-220AA | DO-220AA (SMP) | -55°C ~ 150°C |
||
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 1.5A DO204AC
|
pacchetto: DO-204AC, DO-15, Axial |
Azione5.936 |
|
400V | 1.5A | 1.1V @ 1.5A | Standard Recovery >500ns, > 200mA (Io) | 3.5µs | 5µA @ 400V | - | Through Hole | DO-204AC, DO-15, Axial | DO-204AC (DO-15) | -65°C ~ 175°C |
||
Powerex Inc. |
DIODE GEN PURP 400V 150A DO205AA
|
pacchetto: DO-205AA, DO-8, Stud |
Azione2.256 |
|
400V | 150A | 1.4V @ 470A | Standard Recovery >500ns, > 200mA (Io) | 7µs | 30mA @ 400V | - | Chassis, Stud Mount | DO-205AA, DO-8, Stud | DO-205AA (DO-8) | -65°C ~ 200°C |
||
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 2KV 400A DO205
|
pacchetto: DO-205AB, DO-9, Stud |
Azione7.248 |
|
2000V | 400A | 1.62V @ 1500A | Standard Recovery >500ns, > 200mA (Io) | - | 15mA @ 2000V | - | Chassis, Stud Mount | DO-205AB, DO-9, Stud | DO-205AB, DO-9 | -40°C ~ 190°C |
||
Microsemi Corporation |
DIODE GEN PURP 50V 1A APKG
|
pacchetto: SQ-MELF, A |
Azione6.624 |
|
50V | 1A | 875mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 1µA @ 50V | 25pF @ 10V, 1MHz | Surface Mount | SQ-MELF, A | A-MELF | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 400V 3A DO215AB
|
pacchetto: DO-215AB, SMC Gull Wing |
Azione7.760 |
|
400V | 3A | 1.1V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 10µA @ 400V | - | Surface Mount | DO-215AB, SMC Gull Wing | DO-215AB | -55°C ~ 175°C |
||
TSC America Inc. |
DIODE, SCHOTTKY, STANDARD, 15A,
|
pacchetto: R6, Axial |
Azione7.664 |
|
40V | 15A | 550mV @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 40V | - | Through Hole | R6, Axial | R-6 | -50°C ~ 150°C |
||
Sanken |
DIODE GEN PURP 400V 1.5A SJP
|
pacchetto: 2-SMD, J-Lead |
Azione6.688 |
|
400V | 1.5A | 1.3V @ 1.5A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 10µA @ 400V | - | Surface Mount | 2-SMD, J-Lead | 2-SMD | -40°C ~ 150°C |
||
SMC Diode Solutions |
DIODE GEN PURP 400V 15A ITO220AC
|
pacchetto: TO-220-2 |
Azione7.104 |
|
400V | 15A | 1.25V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 45ns | 10µA @ 400V | - | Through Hole | TO-220-2 | ITO-220AC | -55°C ~ 150°C |
||
Micro Commercial Co |
DIODE SCHOTTKY 50V 3A DO214AB
|
pacchetto: DO-214AB, SMC |
Azione3.728 |
|
50V | 3A | 750mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 50V | - | Surface Mount | DO-214AB, SMC | DO-214AB, (SMC) | -55°C ~ 150°C |
||
Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 800V 1A DO220AA
|
pacchetto: DO-220AA |
Azione312.000 |
|
800V | 1A | 1.6V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 120ns | 1µA @ 800V | 8.5pF @ 4V, 1MHz | Surface Mount | DO-220AA | DO-220AA (SMP) | -55°C ~ 175°C |
||
TSC America Inc. |
DIODE, ULTRA FAST, 1A, 50V, 25NS
|
pacchetto: DO-214AA, SMB |
Azione7.296 |
|
50V | 1A | 875mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 2µA @ 50V | - | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 175°C |
||
TSC America Inc. |
DIODE, HIGH EFFICIENT, 2A, 100V,
|
pacchetto: DO-214AA, SMB |
Azione4.208 |
|
100V | 2A | 1V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 100V | 50pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 150°C |
||
ON Semiconductor |
DIODE SCHOTTKY 40V 250MA SOD323
|
pacchetto: SC-76, SOD-323 |
Azione5.216 |
|
40V | 250mA (DC) | 710mV @ 200mA | Fast Recovery =< 500ns, > 200mA (Io) | - | 10µA @ 40V | 4pF @ 5V, 1MHz | Surface Mount | SC-76, SOD-323 | SOD-323 | -55°C ~ 150°C |
||
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 1A DO204AL
|
pacchetto: DO-204AL, DO-41, Axial |
Azione4.000 |
|
100V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 100V | 15pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -50°C ~ 150°C |
||
TSC America Inc. |
DIODE, FAST, 0.5A, 100V, 150NS,
|
pacchetto: DO-219AB |
Azione3.520 |
|
100V | 500mA | 1.3V @ 500mA | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 5µA @ 100V | 4pF @ 4V, 1MHz | Surface Mount | DO-219AB | Sub SMA | -55°C ~ 150°C |
||
TSC America Inc. |
DIODE, HIGH EFFICIENT, 1A, 100V,
|
pacchetto: DO-219AB |
Azione3.200 |
|
100V | 1A | 950mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 100V | 20pF @ 4V, 1MHz | Surface Mount | DO-219AB | Sub SMA | -55°C ~ 150°C |
||
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 150V 250MA SOD323
|
pacchetto: SC-76, SOD-323 |
Azione2.464 |
|
150V | 250mA (DC) | 1.25V @ 200mA | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 100nA @ 150V | 1.5pF @ 0V, 1MHz | Surface Mount | SC-76, SOD-323 | SOD-323 | 150°C (Max) |
||
Comchip Technology |
DIODE SCHOTTKY 40V 3A DO214AB
|
pacchetto: DO-214AB, SMC |
Azione7.040 |
|
40V | 3A | 550mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 40V | 150pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB, (SMC) | -55°C ~ 125°C |
||
Microsemi Corporation |
DIODE SCHOTTKY 100V 8A DO214AB
|
pacchetto: DO-214AB, SMC |
Azione3.024 |
|
100V | 8A | 780mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 100V | - | Surface Mount | DO-214AB, SMC | DO-214AB | -55°C ~ 175°C |
||
Rohm Semiconductor |
DIODE SCHOTTKY 30V 3A PMDS
|
pacchetto: DO-214AC, SMA |
Azione627.600 |
|
30V | 3A | 420mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 30V | - | Surface Mount | DO-214AC, SMA | PMDS | 150°C (Max) |
||
Central Semiconductor Corp |
DIODE GEN PURP 225V 400MA DO41
|
pacchetto: DO-204AL, DO-41, Axial |
Azione5.600 |
|
225V | 400mA | 1V @ 400mA | Fast Recovery =< 500ns, > 200mA (Io) | - | 200nA @ 225V | 11pF @ 12V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-41 | -65°C ~ 150°C |
||
Diodes Incorporated |
DIODE SBR 10V 4A U-DFN2020-2
|
pacchetto: 2-UFDFN |
Azione2.688 |
|
10V | 4A | 500mV @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 10V | - | Surface Mount | 2-UFDFN | U-DFN2020-2 | -55°C ~ 150°C |
||
Microsemi Corporation |
DIODE GEN PURP 800V 3A AXIAL
|
pacchetto: B, Axial |
Azione6.272 |
|
800V | 3A | 1.2V @ 9A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 1µA @ 800V | - | Through Hole | B, Axial | - | -65°C ~ 175°C |