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Diodi - Raddrizzatori - Singoli

Record 52.788
Pagina  666/1.886
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
Azione
Quantità
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
1N5817A-01
Diodes Incorporated

DIODE SCHOTTKY 20V 1A DO41

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 20V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 750mV @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1mA @ 20V
  • Capacitance @ Vr, F: 110pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-41
  • Operating Temperature - Junction: -65°C ~ 125°C
pacchetto: DO-204AL, DO-41, Axial
Azione3.184
20V
1A
750mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
1mA @ 20V
110pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-41
-65°C ~ 125°C
SB320S-E3/73
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 20V 3A DO204AC

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 20V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 500mV @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500µA @ 20V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-204AC, DO-15, Axial
  • Supplier Device Package: DO-204AC (DO-15)
  • Operating Temperature - Junction: -65°C ~ 150°C
pacchetto: DO-204AC, DO-15, Axial
Azione3.872
20V
3A
500mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 20V
-
Through Hole
DO-204AC, DO-15, Axial
DO-204AC (DO-15)
-65°C ~ 150°C
hot M1MA141KT1
ON Semiconductor

DIODE GEN PURP 40V 100MA SC70-3

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 40V
  • Current - Average Rectified (Io): 100mA (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 3ns
  • Current - Reverse Leakage @ Vr: 100nA @ 35V
  • Capacitance @ Vr, F: 2pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SC-70-3 (SOT323)
  • Operating Temperature - Junction: 150°C (Max)
pacchetto: SC-70, SOT-323
Azione506.400
40V
100mA (DC)
1.2V @ 100mA
Small Signal =< 200mA (Io), Any Speed
3ns
100nA @ 35V
2pF @ 0V, 1MHz
Surface Mount
SC-70, SOT-323
SC-70-3 (SOT323)
150°C (Max)
SCH20000
Semtech Corporation

DIODE GP 20KV 500MA AXIAL

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 20000V
  • Current - Average Rectified (Io): 500mA
  • Voltage - Forward (Vf) (Max) @ If: 20V @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 5µs
  • Current - Reverse Leakage @ Vr: 1µA @ 20000V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: Axial
  • Supplier Device Package: -
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: Axial
Azione3.568
20000V
500mA
20V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
5µs
1µA @ 20000V
-
Through Hole
Axial
-
-55°C ~ 150°C
VS-SD2500C20K
Vishay Semiconductor Diodes Division

DIODE MODULE 2KV 3000A DO200AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 2000V
  • Current - Average Rectified (Io): 3000A
  • Voltage - Forward (Vf) (Max) @ If: 1.41V @ 4000A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 75mA @ 2000V
  • Capacitance @ Vr, F: -
  • Mounting Type: Clamp On
  • Package / Case: DO-200AC, K-PUK
  • Supplier Device Package: DO-200AC, K-PUK
  • Operating Temperature - Junction: -
pacchetto: DO-200AC, K-PUK
Azione5.136
2000V
3000A
1.41V @ 4000A
Standard Recovery >500ns, > 200mA (Io)
-
75mA @ 2000V
-
Clamp On
DO-200AC, K-PUK
DO-200AC, K-PUK
-
R7222405ASOO
Powerex Inc.

DIODE MODULE 2.4KV 500A DO200AB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 2400V
  • Current - Average Rectified (Io): 500A
  • Voltage - Forward (Vf) (Max) @ If: 2.25V @ 1500A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 3µs
  • Current - Reverse Leakage @ Vr: 50mA @ 2400V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: DO-200AB, B-PUK
  • Supplier Device Package: DO-200AB, B-PUK
  • Operating Temperature - Junction: -
pacchetto: DO-200AB, B-PUK
Azione2.176
2400V
500A
2.25V @ 1500A
Standard Recovery >500ns, > 200mA (Io)
3µs
50mA @ 2400V
-
Chassis Mount
DO-200AB, B-PUK
DO-200AB, B-PUK
-
240NQ035-1
SMC Diode Solutions

DIODE SCHOTTKY 35V 240A PRM1-1

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 35V
  • Current - Average Rectified (Io): 240A
  • Voltage - Forward (Vf) (Max) @ If: 610mV @ 240A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 20mA @ 35V
  • Capacitance @ Vr, F: 10300pF @ 5V, 1MHz
  • Mounting Type: Chassis Mount
  • Package / Case: HALF-PAK
  • Supplier Device Package: PRM1-1 (Half Pak Module)
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: HALF-PAK
Azione4.400
35V
240A
610mV @ 240A
Fast Recovery =< 500ns, > 200mA (Io)
-
20mA @ 35V
10300pF @ 5V, 1MHz
Chassis Mount
HALF-PAK
PRM1-1 (Half Pak Module)
-55°C ~ 150°C
VS-ETU3006STRR-M3
Vishay Semiconductor Diodes Division

DIODE ULTRAFAST 30A D2PAK

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 30A
  • Voltage - Forward (Vf) (Max) @ If: 2V @ 30A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 45ns
  • Current - Reverse Leakage @ Vr: 30µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AB (D2PAK)
  • Operating Temperature - Junction: -65°C ~ 175°C
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Azione3.376
600V
30A
2V @ 30A
Fast Recovery =< 500ns, > 200mA (Io)
45ns
30µA @ 600V
-
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
TO-263AB (D2PAK)
-65°C ~ 175°C
HSM835JE3/TR13
Microsemi Corporation

DIODE SCHOTTKY 35V 8A DO214AB

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 35V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 620mV @ 8A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 250µA @ 35V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: DO-214AB
  • Operating Temperature - Junction: -55°C ~ 175°C
pacchetto: DO-214AB, SMC
Azione6.240
35V
8A
620mV @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
-
250µA @ 35V
-
Surface Mount
DO-214AB, SMC
DO-214AB
-55°C ~ 175°C
SF1607G C0G
TSC America Inc.

DIODE, SUPER FAST, 16A, 500V, 35

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 500V
  • Current - Average Rectified (Io): 16A
  • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 8A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35ns
  • Current - Reverse Leakage @ Vr: 10µA @ 500V
  • Capacitance @ Vr, F: 60pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: TO-220-3
Azione2.864
500V
16A
1.7V @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 500V
60pF @ 4V, 1MHz
Through Hole
TO-220-3
TO-220AB
-55°C ~ 150°C
EM 1V0
Sanken

DIODE GEN PURP 400V 1A AXIAL

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 970mV @ 1A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10µA @ 400V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: Axial
  • Supplier Device Package: -
  • Operating Temperature - Junction: -40°C ~ 150°C
pacchetto: Axial
Azione7.440
400V
1A
970mV @ 1A
Standard Recovery >500ns, > 200mA (Io)
-
10µA @ 400V
-
Through Hole
Axial
-
-40°C ~ 150°C
UG06AHA0G
TSC America Inc.

DIODE, ULTRA FAST, 0.6A, 50V, 15

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 50V
  • Current - Average Rectified (Io): 600mA
  • Voltage - Forward (Vf) (Max) @ If: 950mV @ 600mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 15ns
  • Current - Reverse Leakage @ Vr: 5µA @ 50V
  • Capacitance @ Vr, F: 9pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: T-18, Axial
  • Supplier Device Package: TS-1
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: T-18, Axial
Azione2.048
50V
600mA
950mV @ 600mA
Fast Recovery =< 500ns, > 200mA (Io)
15ns
5µA @ 50V
9pF @ 4V, 1MHz
Through Hole
T-18, Axial
TS-1
-55°C ~ 150°C
SS29LHRVG
TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 2A, 9

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 90V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 850mV @ 2A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100µA @ 90V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-219AB
  • Supplier Device Package: Sub SMA
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: DO-219AB
Azione3.456
90V
2A
850mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 90V
-
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
GP10A-E3/54
Vishay Semiconductor Diodes Division

DIODE GEN PURP 50V 1A DO204AL

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 50V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 3µs
  • Current - Reverse Leakage @ Vr: 5µA @ 50V
  • Capacitance @ Vr, F: 8pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-204AL (DO-41)
  • Operating Temperature - Junction: -65°C ~ 175°C
pacchetto: DO-204AL, DO-41, Axial
Azione3.232
50V
1A
1.1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
3µs
5µA @ 50V
8pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-65°C ~ 175°C
ER2JTR
SMC Diode Solutions

DIODE GEN PURP 600V 2A SMB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1.25V @ 2A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35ns
  • Current - Reverse Leakage @ Vr: 5µA @ 600V
  • Capacitance @ Vr, F: 25pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: SMB (DO-214AA)
  • Operating Temperature - Junction: -65°C ~ 150°C
pacchetto: DO-214AA, SMB
Azione2.464
600V
2A
1.25V @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 600V
25pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
SMB (DO-214AA)
-65°C ~ 150°C
CD0603-S01575
Bourns Inc.

DIODE GEN PURP 75V 150MA 0603

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 75V
  • Current - Average Rectified (Io): 150mA
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 50mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 4ns
  • Current - Reverse Leakage @ Vr: 2.5µA @ 75V
  • Capacitance @ Vr, F: 3pF @ 1V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: 0603 (1608 Metric)
  • Supplier Device Package: 0603
  • Operating Temperature - Junction: -40°C ~ 125°C
pacchetto: 0603 (1608 Metric)
Azione1.506.540
75V
150mA
1V @ 50mA
Small Signal =< 200mA (Io), Any Speed
4ns
2.5µA @ 75V
3pF @ 1V, 1MHz
Surface Mount
0603 (1608 Metric)
0603
-40°C ~ 125°C
SV540_R2_00001
Panjit International Inc.

DIODE SCHOTTKY 40V 5A TO277

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40 V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 520 mV @ 5 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 250 µA @ 40 V
  • Capacitance @ Vr, F: 730pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-277, 3-PowerDFN
  • Supplier Device Package: TO-277
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: -
Azione14.820
40 V
5A
520 mV @ 5 A
Fast Recovery =< 500ns, > 200mA (Io)
-
250 µA @ 40 V
730pF @ 0V, 1MHz
Surface Mount
TO-277, 3-PowerDFN
TO-277
-55°C ~ 150°C
JANTX1N6766R
Microchip Technology

DIODE GEN PURP 400V 12A TO254

  • Diode Type: Standard, Reverse Polarity
  • Voltage - DC Reverse (Vr) (Max): 400 V
  • Current - Average Rectified (Io): 12A
  • Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 12 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 60 ns
  • Current - Reverse Leakage @ Vr: 10 µA @ 320 V
  • Capacitance @ Vr, F: 300pF @ 5V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-254-3, TO-254AA
  • Supplier Device Package: TO-254
  • Operating Temperature - Junction: -
pacchetto: -
Request a Quote
400 V
12A
1.55 V @ 12 A
Fast Recovery =< 500ns, > 200mA (Io)
60 ns
10 µA @ 320 V
300pF @ 5V, 1MHz
Through Hole
TO-254-3, TO-254AA
TO-254
-
MBR6100F_T0_00001
Panjit International Inc.

DIODE SCHOTTKY 100V 6A ITO220AC

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 6A
  • Voltage - Forward (Vf) (Max) @ If: 800 mV @ 6 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 50 µA @ 100 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2 Full Pack, Isolated Tab
  • Supplier Device Package: ITO-220AC
  • Operating Temperature - Junction: -65°C ~ 175°C
pacchetto: -
Azione5.520
100 V
6A
800 mV @ 6 A
Fast Recovery =< 500ns, > 200mA (Io)
-
50 µA @ 100 V
-
Through Hole
TO-220-2 Full Pack, Isolated Tab
ITO-220AC
-65°C ~ 175°C
SS115H
Taiwan Semiconductor Corporation

DIODE SCHOTTKY 150V 1A DO214AC

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 150 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100 µA @ 150 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: DO-214AC (SMA)
  • Operating Temperature - Junction: -55°C ~ 125°C
pacchetto: -
Request a Quote
150 V
1A
500 mV @ 1 A
Fast Recovery =< 500ns, > 200mA (Io)
-
100 µA @ 150 V
-
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 125°C
RS3BB-HF
Comchip Technology

DIODE GP 100V 3A SMB/DO-214AA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 150 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 100 V
  • Capacitance @ Vr, F: 40pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: SMB/DO-214AA
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: -
Request a Quote
100 V
3A
1.3 V @ 3 A
Fast Recovery =< 500ns, > 200mA (Io)
150 ns
5 µA @ 100 V
40pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
SMB/DO-214AA
-55°C ~ 150°C
GP10-4005-E3-73
Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 600V 1A DO204AL

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-204AL (DO-41)
  • Operating Temperature - Junction: -
pacchetto: -
Request a Quote
600 V
1A
-
Standard Recovery >500ns, > 200mA (Io)
-
-
-
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-
R42140F
Microchip Technology

DIODE GP REV 1.4KV 125A DO205AA

  • Diode Type: Standard, Reverse Polarity
  • Voltage - DC Reverse (Vr) (Max): 1400 V
  • Current - Average Rectified (Io): 125A
  • Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 50 µA @ 1400 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis, Stud Mount
  • Package / Case: DO-205AA, DO-8, Stud
  • Supplier Device Package: DO-205AA (DO-8)
  • Operating Temperature - Junction: -65°C ~ 200°C
pacchetto: -
Request a Quote
1400 V
125A
1.2 V @ 200 A
Standard Recovery >500ns, > 200mA (Io)
-
50 µA @ 1400 V
-
Chassis, Stud Mount
DO-205AA, DO-8, Stud
DO-205AA (DO-8)
-65°C ~ 200°C
SDS065J020H3-ISATH
Luminus Devices Inc.

DIODE 650V-20A TO247-2L

  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 650 V
  • Current - Average Rectified (Io): 51A
  • Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 20 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 40 µA @ 650 V
  • Capacitance @ Vr, F: 1018pF @ 0V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-247-2
  • Supplier Device Package: TO-247-2L
  • Operating Temperature - Junction: -55°C ~ 175°C
pacchetto: -
Request a Quote
650 V
51A
1.5 V @ 20 A
No Recovery Time > 500mA (Io)
0 ns
40 µA @ 650 V
1018pF @ 0V, 1MHz
Through Hole
TO-247-2
TO-247-2L
-55°C ~ 175°C
SS2PH9HM3_A-I
Vishay General Semiconductor - Diodes Division

DIODE SCHOTTKY 29V 2A DO220AA

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 29 V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 800 mV @ 2 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1 µA @ 29 V
  • Capacitance @ Vr, F: 65pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-220AA
  • Supplier Device Package: DO-220AA (SMP)
  • Operating Temperature - Junction: -55°C ~ 175°C
pacchetto: -
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29 V
2A
800 mV @ 2 A
Fast Recovery =< 500ns, > 200mA (Io)
-
1 µA @ 29 V
65pF @ 4V, 1MHz
Surface Mount
DO-220AA
DO-220AA (SMP)
-55°C ~ 175°C
UES1305HR2-TR
Microchip Technology

DIODE GEN PURP 300V 5A E AXIAL

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 300 V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 3 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50 ns
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: E, Axial
  • Supplier Device Package: E, Axial
  • Operating Temperature - Junction: -
pacchetto: -
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300 V
5A
1.25 V @ 3 A
Fast Recovery =< 500ns, > 200mA (Io)
50 ns
-
-
Through Hole
E, Axial
E, Axial
-
1N4001GP-TP
Micro Commercial Co

Interface

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 50 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 2 µs
  • Current - Reverse Leakage @ Vr: 5 µA @ 50 V
  • Capacitance @ Vr, F: 15pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-41
  • Operating Temperature - Junction: -55°C ~ 175°C
pacchetto: -
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50 V
1A
1.1 V @ 1 A
Standard Recovery >500ns, > 200mA (Io)
2 µs
5 µA @ 50 V
15pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-41
-55°C ~ 175°C
25F140
Solid State Inc.

DIODE GEN PURP 1.4KV 25A DO4

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1400 V
  • Current - Average Rectified (Io): 25A
  • Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 25 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10 µA @ 1400 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Stud Mount
  • Package / Case: DO-203AA, DO-4, Stud
  • Supplier Device Package: DO-4
  • Operating Temperature - Junction: -65°C ~ 150°C
pacchetto: -
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1400 V
25A
1.2 V @ 25 A
Standard Recovery >500ns, > 200mA (Io)
-
10 µA @ 1400 V
-
Stud Mount
DO-203AA, DO-4, Stud
DO-4
-65°C ~ 150°C