Immagine |
Numero di parte |
Produttore |
Descrizione |
pacchetto |
Azione |
Quantità |
Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Mounting Type | Package / Case | Supplier Device Package | Operating Temperature - Junction |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Diodes Incorporated |
DIODE SCHOTTKY 30V 3A DO201AD
|
pacchetto: - |
Azione2.432 |
|
- | - | - | - | - | - | - | - | - | - | - |
||
Microsemi Corporation |
DIODE GEN PURP 440V 2A AXIAL
|
pacchetto: A, Axial |
Azione23.916 |
|
440V | 2A | 1.4V @ 1.2A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 500nA @ 440V | 10pF @ 10V, 1MHz | Through Hole | A, Axial | - | -65°C ~ 150°C |
||
ON Semiconductor |
DIODE GEN PURP 400V 5A TP
|
pacchetto: TO-251-3 Short Leads, IPak, TO-251AA |
Azione4.000 |
|
400V | 5A | 1.5V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 20µA @ 400V | - | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | TP | 150°C (Max) |
||
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 45V 16A TO220AC
|
pacchetto: TO-220-2 |
Azione3.392 |
|
45V | 16A | 660mV @ 16A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 45V | - | Through Hole | TO-220-2 | TO-220AC | -65°C ~ 175°C |
||
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1KV 1A DO214AC
|
pacchetto: DO-214AC, SMA |
Azione7.408 |
|
1000V | 1A | 1.7V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 10µA @ 1000V | 10pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
||
Powerex Inc. |
DIODE MODULE 600V 97A
|
pacchetto: Module |
Azione4.672 |
|
600V | 97A | 2.8V @ 200A | Fast Recovery =< 500ns, > 200mA (Io) | 110ns | 1mA @ 600V | - | Chassis Mount | Module | Module | - |
||
Comchip Technology |
DIODE GEN PURP 600V 3A DO214AB
|
pacchetto: DO-214AB, SMC |
Azione7.248 |
|
600V | 3A | 1.7V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 10µA @ 600V | - | Surface Mount | DO-214AB, SMC | DO-214AB, (SMC) | 150°C (Max) |
||
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 300V 30A DO203AB
|
pacchetto: DO-203AB, DO-5, Stud |
Azione7.456 |
|
300V | 30A | 1.8V @ 62.8A | Fast Recovery =< 500ns, > 200mA (Io) | 350ns | 80µA @ 300V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-203AB | -40°C ~ 125°C |
||
Powerex Inc. |
DIODE MODULE 2KV 2200A DO200AB
|
pacchetto: DO-200AB, B-PUK |
Azione4.720 |
|
2000V | 2200A | 1.1V @ 1500A | Standard Recovery >500ns, > 200mA (Io) | 15µs | 150mA @ 2000V | - | Chassis Mount | DO-200AB, B-PUK | DO-200AB, B-PUK | - |
||
Semtech Corporation |
DIODE GEN PURP 7.5KV 400MA MOD
|
pacchetto: Module |
Azione4.384 |
|
7500V | 400mA | 10V @ 200mA | Fast Recovery =< 500ns, > 200mA (Io) | 2.5µs | 2µA @ 7500V | - | Through Hole | Module | - | -55°C ~ 150°C |
||
Vishay Semiconductor Diodes Division |
DIODE GP 1.6KV 330A DO205AB
|
pacchetto: DO-205AB, DO-9, Stud |
Azione3.488 |
|
1600V | 330A | 1.46V @ 942A | Standard Recovery >500ns, > 200mA (Io) | - | - | - | Chassis, Stud Mount | DO-205AB, DO-9, Stud | DO-205AB, DO-9 | -40°C ~ 180°C |
||
Microsemi Corporation |
DIODE GEN PURP 150V 1A APKG
|
pacchetto: SQ-MELF, A |
Azione5.488 |
|
150V | 1A | 875mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 1µA @ 150V | 25pF @ 10V, 1MHz | Surface Mount | SQ-MELF, A | A-MELF | -65°C ~ 175°C |
||
Microsemi Corporation |
DIODE GEN PURP 200V 5A B-MELF
|
pacchetto: SQ-MELF, B |
Azione7.888 |
|
200V | 5A | 1.2V @ 9A | Fast Recovery =< 500ns, > 200mA (Io) | 2µs | 1µA @ 200V | - | Surface Mount | SQ-MELF, B | B, SQ-MELF | -65°C ~ 175°C |
||
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 800V 8A TO263AB
|
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Azione4.384 |
|
800V | 8A | 1.1V @ 8A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 800V | 55pF @ 4V, 1MHz | Surface Mount | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | TO-263AB | -55°C ~ 150°C |
||
TSC America Inc. |
DIODE, SCHOTTKY, STANDARD, 20A,
|
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Azione3.552 |
|
60V | 20A | 700mV @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 60V | - | Surface Mount | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | TO-263AB (D2PAK) | -55°C ~ 150°C |
||
Micro Commercial Co |
DIODE GEN PURP 800V 6A DO201AD
|
pacchetto: DO-201AD, Axial |
Azione6.176 |
|
800V | 6A | 1V @ 6A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 800V | - | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
||
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 200V 3A DO204AC
|
pacchetto: DO-204AC, DO-15, Axial |
Azione3.952 |
|
200V | 3A | 1.4V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 50µA @ 200V | 170pF @ 4V, 1MHz | Through Hole | DO-204AC, DO-15, Axial | DO-204AC (DO-15) | -40°C ~ 150°C |
||
Microsemi Corporation |
DIODE SCHOTTKY 1A 40V SMAJ
|
pacchetto: - |
Azione3.904 |
|
- | - | - | - | - | - | - | - | - | - | - |
||
Vishay Semiconductor Diodes Division |
DIODE SW 1A 600V 250NS DO204AL
|
pacchetto: DO-204AL, DO-41, Axial |
Azione3.664 |
|
600V | 1A | 1.3V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 5µA @ 600V | 15pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 175°C |
||
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 40V 2A DO220AA
|
pacchetto: DO-220AA |
Azione3.712 |
|
40V | 2A | 550mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 150µA @ 40V | 110pF @ 4V, 1MHz | Surface Mount | DO-220AA | DO-220AA (SMP) | -55°C ~ 150°C |
||
TSC America Inc. |
DIODE, SUPER FAST, 1A, 400V, 35N
|
pacchetto: DO-214AC, SMA |
Azione3.472 |
|
400V | 1A | 1.3V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 5µA @ 400V | 18pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
||
Vishay Semiconductor Diodes Division |
DIODE 1A 600V 75NS DO-214AC
|
pacchetto: DO-214AC, SMA |
Azione150.000 |
|
600V | 1A | 1.7V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 10µA @ 600V | 10pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
||
TSC America Inc. |
DIODE, SCHOTTKY, STANDARD, 2A, 3
|
pacchetto: DO-219AB |
Azione5.632 |
|
30V | 2A | 500mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 400µA @ 30V | - | Surface Mount | DO-219AB | Sub SMA | -55°C ~ 150°C |
||
Microsemi Corporation |
DIODE SCHOTTKY 5A 30V TOPHAT
|
pacchetto: Axial |
Azione2.040.000 |
|
30V | 5A | 370mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 10mA @ 30V | - | Through Hole | Axial | Axial | -65°C ~ 125°C |
||
Rohm Semiconductor |
DIODE SCHOTTKY 30V 1.5A PMDU
|
pacchetto: SOD-123F |
Azione5.242.512 |
|
30V | 1.5A | 490mV @ 1.5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 50µA @ 30V | - | Surface Mount | SOD-123F | PMDU | 150°C (Max) |
||
STMicroelectronics |
DIODE GEN PURP 200V 3A DO201AD
|
pacchetto: DO-201AD, Axial |
Azione120.000 |
|
200V | 3A | 1V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 3µA @ 200V | - | Through Hole | DO-201AD, Axial | DO-201AD | 175°C (Max) |
||
Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 200V 4A SOD64
|
pacchetto: SOD-64, Axial |
Azione59.076 |
|
200V | 4A | 1.1V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 200V | - | Through Hole | SOD-64, Axial | SOD-64 | -55°C ~ 175°C |
||
STMicroelectronics |
DIODE SCHOTTKY 60V 1A DO41
|
pacchetto: DO-204AL, DO-41, Axial |
Azione39.780 |
|
60V | 1A | 570mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 50µA @ 60V | - | Through Hole | DO-204AL, DO-41, Axial | DO-41 | 150°C (Max) |
||
Diodes Incorporated |
DIODE GEN PURP 100V 3A DO201AD
|
pacchetto: DO-201AD, Axial |
Azione68.514 |
|
100V | 3A | 1V @ 3A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 100V | 50pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -65°C ~ 150°C |
||
Micro Commercial Co |
DIODE GEN PURP 75V 250MA SOD123
|
pacchetto: SOD-123 |
Azione770.808 |
|
75V | 250mA | 1V @ 100mA | Fast Recovery =< 500ns, > 200mA (Io) | 4ns | 2.5µA @ 75V | 4pF @ 4V, 1MHz | Surface Mount | SOD-123 | SOD-123 | -55°C ~ 150°C |