Immagine |
Numero di parte |
Produttore |
Descrizione |
pacchetto |
Azione |
Quantità |
Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Mounting Type | Package / Case | Supplier Device Package | Operating Temperature - Junction |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
DIODE SIC 600V 8A SAWN WAFER
|
pacchetto: Die |
Azione3.536 |
|
600V | 8A (DC) | 1.7V @ 8A | No Recovery Time > 500mA (Io) | 0ns | 100µA @ 600V | 310pF @ 1V, 1MHz | Surface Mount | Die | Die | -55°C ~ 175°C |
||
Infineon Technologies |
DIODE SHOCTTKY
|
pacchetto: - |
Azione3.040 |
|
- | - | - | - | - | - | - | - | - | - | - |
||
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 40V 1A DO214AC
|
pacchetto: DO-214AC, SMA |
Azione4.624 |
|
40V | 1A | 500mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 40V | - | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -65°C ~ 125°C |
||
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 8A ITO220AC
|
pacchetto: TO-220-2 Full Pack, Isolated Tab |
Azione7.456 |
|
400V | 8A | 1.85V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | 145ns | 10µA @ 400V | - | Through Hole | TO-220-2 Full Pack, Isolated Tab | ITO-220AC | -40°C ~ 150°C |
||
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 100V 30A ITO220AB
|
pacchetto: TO-220-3 Full Pack, Isolated Tab |
Azione2.080 |
|
100V | 30A | 1V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | - | 350µA @ 100V | - | Through Hole | TO-220-3 Full Pack, Isolated Tab | ITO-220AB | -40°C ~ 150°C |
||
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 10A D2PAK
|
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Azione6.208 |
|
200V | 10A | 1.2V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 145ns | 100µA @ 200V | - | Surface Mount | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | TO-263AB (D2PAK) | -40°C ~ 150°C |
||
Semtech Corporation |
DIODE GEN PURP 15KV 400MA MODULE
|
pacchetto: Module |
Azione4.992 |
|
15000V | 400mA | 20V @ 200mA | Fast Recovery =< 500ns, > 200mA (Io) | 2.5µs | 2µA @ 15000V | - | Through Hole | Module | - | -55°C ~ 150°C |
||
Powerex Inc. |
DIODE MODULE 1.2KV 700A DO200AB
|
pacchetto: DO-200AB, B-PUK |
Azione6.208 |
|
1200V | 700A | 1.65V @ 1500A | Standard Recovery >500ns, > 200mA (Io) | 5µs | 50mA @ 1200V | - | Chassis Mount | DO-200AB, B-PUK | DO-200AB, B-PUK | - |
||
Vishay Semiconductor Diodes Division |
DIODE INPUT 60A 200V TO-247
|
pacchetto: TO-247-3 |
Azione6.992 |
|
200V | 60A | 1.3V @ 60A | Fast Recovery =< 500ns, > 200mA (Io) | 180ns | 100µA @ 200V | - | Through Hole | TO-247-3 | TO-247AC | -40°C ~ 150°C |
||
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 800V 16A DO203AA
|
pacchetto: DO-203AA, DO-4, Stud |
Azione5.712 |
|
800V | 16A | 1.4V @ 16A | Fast Recovery =< 500ns, > 200mA (Io) | 500ns | 50µA @ 800V | - | Chassis, Stud Mount | DO-203AA, DO-4, Stud | DO-203AA | -65°C ~ 150°C |
||
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 900V 12A DO203AA
|
pacchetto: DO-203AA, DO-4, Stud |
Azione5.088 |
|
900V | 12A | 1.35V @ 12A | Standard Recovery >500ns, > 200mA (Io) | - | 700µA @ 900V | - | Chassis, Stud Mount | DO-203AA, DO-4, Stud | DO-203AA | -65°C ~ 200°C |
||
Microsemi Corporation |
DIODE SCHOTTKY 60A 100V TO-247AD
|
pacchetto: - |
Azione7.184 |
|
- | - | - | - | - | - | - | - | - | - | - |
||
Microsemi Corporation |
DIODE GEN PURP 800V 3A DO214AB
|
pacchetto: DO-214AB, SMC |
Azione3.536 |
|
800V | 3A | 1.2V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 60ns | 10µA @ 800V | - | Surface Mount | DO-214AB, SMC | DO-214AB | -55°C ~ 175°C |
||
Microsemi Corporation |
DIODE SCHOTTKY 3A 40V SMCJ
|
pacchetto: - |
Azione2.048 |
|
- | - | - | - | - | - | - | - | - | - | - |
||
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 20A 120V TO-220AB
|
pacchetto: TO-220-3 |
Azione7.616 |
|
120V | 20A | 1.12V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | - | 300µA @ 120V | - | Through Hole | TO-220-3 | TO-220AB | -40°C ~ 150°C |
||
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 60V 3A DO214AA
|
pacchetto: DO-214AA, SMB |
Azione4.640 |
|
60V | 3A | 660mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 60V | - | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 150°C |
||
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 60V 2.5A DO214AC
|
pacchetto: DO-214AC, SMA |
Azione4.416 |
|
60V | 2.5A | 580mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1.5mA @ 60V | 395pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
||
Sanken |
DIODE GEN PURP 600V 1A AXIAL
|
pacchetto: Axial |
Azione2.304 |
|
600V | 1A | 980mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 10µA @ 600V | - | Through Hole | Axial | - | -40°C ~ 150°C |
||
TSC America Inc. |
DIODE, SUPER FAST, 1A, 100V, 35N
|
pacchetto: DO-219AB |
Azione2.304 |
|
100V | 1A | 950mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 5µA @ 100V | 10pF @ 4V, 1MHz | Surface Mount | DO-219AB | Sub SMA | -55°C ~ 150°C |
||
TSC America Inc. |
DIODE, ULTRA FAST, 1A, 150V, 25N
|
pacchetto: DO-214AA, SMB |
Azione5.168 |
|
150V | 1A | 875mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 50µA @ 150V | - | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 175°C |
||
Comchip Technology |
DIODE GEN PURP 1KV 3A DO214AB
|
pacchetto: DO-214AB, SMC |
Azione5.136 |
|
1000V | 3A | 1.1V @ 3A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 1000V | - | Surface Mount | DO-214AB, SMC | DO-214AB, (SMC) | 150°C (Max) |
||
TSC America Inc. |
DIODE, FAST, 1.5A, 200V, 150NS,
|
pacchetto: DO-204AC, DO-15, Axial |
Azione4.240 |
|
200V | 1.5A | 1.3V @ 1.5A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 5µA @ 200V | 20pF @ 4V, 1MHz | Through Hole | DO-204AC, DO-15, Axial | DO-204AC (DO-15) | -55°C ~ 150°C |
||
TSC America Inc. |
DIODE, ULTRA FAST, 6A, 200V, 25N
|
pacchetto: TO-277, 3-PowerDFN |
Azione5.248 |
|
200V | 6A | 1.05V @ 6A | Fast Recovery =< 500ns, > 200mA (Io) | 45ns | 10µA @ 200V | 50pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
||
TSC America Inc. |
DIODE, HIGH EFFICIENT, 1.5A, 400
|
pacchetto: DO-214AC, SMA |
Azione4.640 |
|
400V | 1.5A | 1.4V @ 1.5A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 1µA @ 400V | - | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
||
TSC America Inc. |
DIODE, SCHOTTKY, STANDARD, 2A, 6
|
pacchetto: DO-219AB |
Azione4.752 |
|
60V | 2A | 700mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 400µA @ 60V | - | Surface Mount | DO-219AB | Sub SMA | -55°C ~ 150°C |
||
Diodes Incorporated |
DIODE SCHOTTKY 30V 1A POWERDI323
|
pacchetto: PowerDI? 323 |
Azione2.464 |
|
30V | 1A | 450mV @ 700mA | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 30V | 40pF @ 10V, 1MHz | Surface Mount | PowerDI? 323 | PowerDI? 323 | -55°C ~ 150°C |
||
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 20V 2A DO204AC
|
pacchetto: DO-204AC, DO-15, Axial |
Azione6.912 |
|
20V | 2A | 500mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 20V | - | Through Hole | DO-204AC, DO-15, Axial | DO-204AC (DO-15) | -65°C ~ 125°C |
||
STMicroelectronics |
DIODE GEN PURP 600V 3A DO201AD
|
pacchetto: DO-201AD, Axial |
Azione257.208 |
|
600V | 3A | 1.3V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 85ns | 3µA @ 600V | - | Through Hole | DO-201AD, Axial | DO-201AD | 175°C (Max) |
||
Panasonic Electronic Components |
DIODE SCHOTTKY 40V 1A 0402
|
pacchetto: 0402 (1005 Metric) |
Azione48.090 |
|
40V | 1A | 520mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 8.8ns | 150µA @ 40V | 28pF @ 10V, 1MHz | Surface Mount | 0402 (1005 Metric) | 0402 (1005 Metric) | 150°C (Max) |
||
Diodes Incorporated |
DIODE GEN PURP 1KV 3A SMC
|
pacchetto: DO-214AB, SMC |
Azione539.700 |
|
1000V | 3A | 1.3V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 500ns | 5µA @ 1000V | 50pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | SMC | -65°C ~ 150°C |