Pagina 8 - Transistor - Bipolari (BJT) - RF | Dispositivi a semiconduttore discreti | Heisener Electronics
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Transistor - Bipolari (BJT) - RF

Record 1.249
Pagina  8/42
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
Azione
Quantità
Voltage - Collector Emitter Breakdown (Max)
Frequency - Transition
Noise Figure (dB Typ @ f)
Gain
Power - Max
DC Current Gain (hFE) (Min) @ Ic, Vce
Current - Collector (Ic) (Max)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
BFP650E6327HTSA1
Infineon Technologies

TRANSISTOR RF NPN 4.5V SOT-343

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 4.5V
  • Frequency - Transition: 37GHz
  • Noise Figure (dB Typ @ f): 0.8dB ~ 1.9dB @ 1.8GHz ~ 6GHz
  • Gain: 10.5dB ~ 21.5dB
  • Power - Max: 500mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 80mA, 3V
  • Current - Collector (Ic) (Max): 150mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-82A, SOT-343
  • Supplier Device Package: PG-SOT343-4
pacchetto: SC-82A, SOT-343
Azione3.584
4.5V
37GHz
0.8dB ~ 1.9dB @ 1.8GHz ~ 6GHz
10.5dB ~ 21.5dB
500mW
110 @ 80mA, 3V
150mA
150°C (TJ)
Surface Mount
SC-82A, SOT-343
PG-SOT343-4
BFS 360L6 E6327
Infineon Technologies

TRANSISTOR NPN 6V 35MA TSLP-6

  • Transistor Type: 2 NPN (Dual)
  • Voltage - Collector Emitter Breakdown (Max): 9V
  • Frequency - Transition: 14GHz
  • Noise Figure (dB Typ @ f): 1dB ~ 1.5dB @ 1.8GHz ~ 3GHz
  • Gain: 10dB ~ 14.5dB
  • Power - Max: 210mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 15mA, 3V
  • Current - Collector (Ic) (Max): 35mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-XFDFN
  • Supplier Device Package: PG-TSLP-6
pacchetto: 6-XFDFN
Azione6.640
9V
14GHz
1dB ~ 1.5dB @ 1.8GHz ~ 3GHz
10dB ~ 14.5dB
210mW
60 @ 15mA, 3V
35mA
150°C (TJ)
Surface Mount
6-XFDFN
PG-TSLP-6
BFR 740L3 E6327
Infineon Technologies

TRANSISTOR RF NPN 4V TSLP-3

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 4.7V
  • Frequency - Transition: 42GHz
  • Noise Figure (dB Typ @ f): 0.5dB ~ 0.8dB @ 1.8GHz ~ 6Ghz
  • Gain: 24dB
  • Power - Max: 160mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 25mA, 3V
  • Current - Collector (Ic) (Max): 30mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-101, SOT-883
  • Supplier Device Package: PG-TSLP-3
pacchetto: SC-101, SOT-883
Azione2.304
4.7V
42GHz
0.5dB ~ 0.8dB @ 1.8GHz ~ 6Ghz
24dB
160mW
160 @ 25mA, 3V
30mA
150°C (TJ)
Surface Mount
SC-101, SOT-883
PG-TSLP-3
MRF8372GR1
Microsemi Corporation

TRANS NPN 16V 200MA SO8

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 16V
  • Frequency - Transition: 870MHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 8dB ~ 9.5dB
  • Power - Max: 2.2W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 5V
  • Current - Collector (Ic) (Max): 200mA
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione7.216
16V
870MHz
-
8dB ~ 9.5dB
2.2W
30 @ 50mA, 5V
200mA
-
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
NE46134-T1-QR-AZ
CEL

SAME AS 2SC4536 NPN SILICON MEDI

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 5.5GHz
  • Noise Figure (dB Typ @ f): 1.5dB ~ 2dB @ 500MHz ~ 1GHz
  • Gain: 7dB
  • Power - Max: 2W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 10V
  • Current - Collector (Ic) (Max): 250mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-243AA
  • Supplier Device Package: SOT-89
pacchetto: TO-243AA
Azione3.984
15V
5.5GHz
1.5dB ~ 2dB @ 500MHz ~ 1GHz
7dB
2W
40 @ 50mA, 10V
250mA
150°C (TJ)
Surface Mount
TO-243AA
SOT-89
hot 2N4957
Microsemi Corporation

TRANS PNP 30V 30MA TO72

  • Transistor Type: PNP
  • Voltage - Collector Emitter Breakdown (Max): 30V
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): 3.5dB @ 450MHz
  • Gain: 25dB
  • Power - Max: 200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V
  • Current - Collector (Ic) (Max): 30mA
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-72-3 Metal Can
  • Supplier Device Package: TO-72
pacchetto: TO-72-3 Metal Can
Azione11.436
30V
-
3.5dB @ 450MHz
25dB
200mW
30 @ 5mA, 10V
30mA
-65°C ~ 200°C (TJ)
Through Hole
TO-72-3 Metal Can
TO-72
hot 2SC4228-T1-A
CEL

RF TRANSISTOR NPN SOT-323

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 10V
  • Frequency - Transition: 8GHz
  • Noise Figure (dB Typ @ f): 1.9dB @ 2GHz
  • Gain: 7.5dB
  • Power - Max: 150mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 3V
  • Current - Collector (Ic) (Max): 35mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SOT-323
pacchetto: SC-70, SOT-323
Azione327.360
10V
8GHz
1.9dB @ 2GHz
7.5dB
150mW
50 @ 5mA, 3V
35mA
150°C (TJ)
Surface Mount
SC-70, SOT-323
SOT-323
BFG520/X,215
NXP

TRANS RF NPN 9GHZ 15V SOT143B

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 9GHz
  • Noise Figure (dB Typ @ f): 1.1dB ~ 2.1dB @ 900MHz
  • Gain: -
  • Power - Max: 300mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 20mA, 6V
  • Current - Collector (Ic) (Max): 70mA
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-253-4, TO-253AA
  • Supplier Device Package: SOT-143B
pacchetto: TO-253-4, TO-253AA
Azione3.840
15V
9GHz
1.1dB ~ 2.1dB @ 900MHz
-
300mW
60 @ 20mA, 6V
70mA
175°C (TJ)
Surface Mount
TO-253-4, TO-253AA
SOT-143B
MPSH81_D75Z
Fairchild/ON Semiconductor

TRANS RF PNP 20V 50MA TO-92

  • Transistor Type: PNP
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Frequency - Transition: 600MHz
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: 350mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
pacchetto: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Azione3.728
20V
600MHz
-
-
350mW
60 @ 5mA, 10V
50mA
-55°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
MPSH81_D26Z
Fairchild/ON Semiconductor

TRANS RF PNP 20V 50MA TO-92

  • Transistor Type: PNP
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Frequency - Transition: 600MHz
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: 350mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
pacchetto: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Azione7.888
20V
600MHz
-
-
350mW
60 @ 5mA, 10V
50mA
-55°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
MSC2295-CT1G
ON Semiconductor

TRANS NPN RF BIPO 20V SC-59

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Frequency - Transition: 150MHz
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: 200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 1mA, 10V
  • Current - Collector (Ic) (Max): 30mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SC-59
pacchetto: TO-236-3, SC-59, SOT-23-3
Azione5.840
20V
150MHz
-
-
200mW
110 @ 1mA, 10V
30mA
150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SC-59
hot MBC13900NT1
NXP

TRANS RF NPN LO NOISE SOT-343

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 6.5V
  • Frequency - Transition: 15GHz
  • Noise Figure (dB Typ @ f): 0.8dB ~ 1.1dB @ 900MHz ~ 1.9GHz
  • Gain: 15dB ~ 22dB
  • Power - Max: 188mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 2V
  • Current - Collector (Ic) (Max): 20mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-82A, SOT-343
  • Supplier Device Package: SOT-343
pacchetto: SC-82A, SOT-343
Azione4.192
6.5V
15GHz
0.8dB ~ 1.1dB @ 900MHz ~ 1.9GHz
15dB ~ 22dB
188mW
100 @ 5mA, 2V
20mA
150°C (TJ)
Surface Mount
SC-82A, SOT-343
SOT-343
NE85618-T1-A
CEL

RF TRANSISTOR NPN SOT-343

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 6.5GHz
  • Noise Figure (dB Typ @ f): 1.1dB @ 1GHz
  • Gain: 13dB
  • Power - Max: 150mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 10V
  • Current - Collector (Ic) (Max): 100mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-82A, SOT-343
  • Supplier Device Package: SOT-343
pacchetto: SC-82A, SOT-343
Azione3.072
12V
6.5GHz
1.1dB @ 1GHz
13dB
150mW
50 @ 20mA, 10V
100mA
150°C (TJ)
Surface Mount
SC-82A, SOT-343
SOT-343
hot UPA806T-T1
CEL

TRANS NPN HF FT=12GHZ SOT-363

  • Transistor Type: 2 NPN (Dual)
  • Voltage - Collector Emitter Breakdown (Max): 6V
  • Frequency - Transition: 12GHz
  • Noise Figure (dB Typ @ f): 1.5dB ~ 2.5dB @ 2GHz
  • Gain: -
  • Power - Max: 200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 10mA, 3V
  • Current - Collector (Ic) (Max): 30mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: 6-SO
pacchetto: 6-TSSOP, SC-88, SOT-363
Azione211.452
6V
12GHz
1.5dB ~ 2.5dB @ 2GHz
-
200mW
75 @ 10mA, 3V
30mA
150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
6-SO
TAN15
Microsemi Corporation

TRANS RF BIPO 175W 2A 55LT1

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Frequency - Transition: 960MHz ~ 1.215GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 7dB ~ 8dB
  • Power - Max: 175W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Current - Collector (Ic) (Max): 2A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: 55LT
  • Supplier Device Package: 55LT
pacchetto: 55LT
Azione4.320
50V
960MHz ~ 1.215GHz
-
7dB ~ 8dB
175W
-
2A
200°C (TJ)
Chassis Mount
55LT
55LT
JANTXV2N2857UB
Microsemi Corporation

TRANS NPN 15V 0.04A

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): 4.5dB @ 450MHz
  • Gain: 21dB
  • Power - Max: 200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 3mA, 1V
  • Current - Collector (Ic) (Max): 40mA
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 3-SMD, No Lead
  • Supplier Device Package: UB
pacchetto: 3-SMD, No Lead
Azione2.352
15V
-
4.5dB @ 450MHz
21dB
200mW
30 @ 3mA, 1V
40mA
-65°C ~ 200°C (TJ)
Surface Mount
3-SMD, No Lead
UB
JANTX2N4957UB
Microsemi Corporation

TRANS PNP 30V 30MA

  • Transistor Type: PNP
  • Voltage - Collector Emitter Breakdown (Max): 30V
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): 3.5dB @ 450MHz
  • Gain: 25dB
  • Power - Max: 200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V
  • Current - Collector (Ic) (Max): 30mA
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 3-SMD, No Lead
  • Supplier Device Package: UB
pacchetto: 3-SMD, No Lead
Azione7.248
30V
-
3.5dB @ 450MHz
25dB
200mW
30 @ 5mA, 10V
30mA
-65°C ~ 200°C (TJ)
Surface Mount
3-SMD, No Lead
UB
hot MRF5812R2
Microsemi Corporation

RF TRANS NPN 18V 200MA 8SOIC

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 18V
  • Frequency - Transition: 5GHz
  • Noise Figure (dB Typ @ f): 2dB @ 500MHz
  • Gain: 15.5dB
  • Power - Max: 1.25W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 5V
  • Current - Collector (Ic) (Max): 200mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione266.268
18V
5GHz
2dB @ 500MHz
15.5dB
1.25W
50 @ 50mA, 5V
200mA
150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
2SC5245A-4-TL-E
ON Semiconductor

TRANS NPN BIPO UHF-LNA MCP

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 10V
  • Frequency - Transition: 8GHz
  • Noise Figure (dB Typ @ f): 0.9dB ~ 3dB @ 1GHz ~ 1.5GHz
  • Gain: 10dB
  • Power - Max: 150mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 10mA, 5V
  • Current - Collector (Ic) (Max): 30mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: 3-MCP
pacchetto: SC-70, SOT-323
Azione5.392
10V
8GHz
0.9dB ~ 3dB @ 1GHz ~ 1.5GHz
10dB
150mW
90 @ 10mA, 5V
30mA
150°C (TJ)
Surface Mount
SC-70, SOT-323
3-MCP
AT-31011-BLKG
Broadcom Limited

TRANS NPN BIPO 5.5V 16MA SOT-143

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 5.5V
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): 0.9dB ~ 1.2dB @ 900MHz
  • Gain: 11dB ~ 13dB
  • Power - Max: 150mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 1mA, 2.7V
  • Current - Collector (Ic) (Max): 16mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-253-4, TO-253AA
  • Supplier Device Package: SOT-143
pacchetto: TO-253-4, TO-253AA
Azione3.664
5.5V
-
0.9dB ~ 1.2dB @ 900MHz
11dB ~ 13dB
150mW
70 @ 1mA, 2.7V
16mA
150°C (TJ)
Surface Mount
TO-253-4, TO-253AA
SOT-143
BFU530AVL
NXP

TRANS RF NPN 12V 40MA TO-236AB

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 11GHz
  • Noise Figure (dB Typ @ f): 1.1dB @ 1.8GHz
  • Gain: 12dB
  • Power - Max: 450mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 8V
  • Current - Collector (Ic) (Max): 40mA
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: TO-236AB (SOT23)
pacchetto: TO-236-3, SC-59, SOT-23-3
Azione3.168
12V
11GHz
1.1dB @ 1.8GHz
12dB
450mW
60 @ 10mA, 8V
40mA
-40°C ~ 150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
TO-236AB (SOT23)
hot MRF428
M/A-Com Technology Solutions

TRANS RF NPN 55V 20A 211-11

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 55V
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): -
  • Gain: 15dB
  • Power - Max: 150W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 5A, 5V
  • Current - Collector (Ic) (Max): 20A
  • Operating Temperature: -
  • Mounting Type: Chassis Mount
  • Package / Case: 211-11, Style 2
  • Supplier Device Package: 211-11, Style 2
pacchetto: 211-11, Style 2
Azione5.760
55V
-
-
15dB
150W
10 @ 5A, 5V
20A
-
Chassis Mount
211-11, Style 2
211-11, Style 2
NE68139R-T1
CEL

TRANS NPN 1GHZ SOT-143R

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 10V
  • Frequency - Transition: 9GHz
  • Noise Figure (dB Typ @ f): 1.2dB ~ 2dB @ 1GHz
  • Gain: 13.5dB
  • Power - Max: 200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 7mA, 3V
  • Current - Collector (Ic) (Max): 65mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-143R
  • Supplier Device Package: SOT-143R
pacchetto: SOT-143R
Azione3.648
10V
9GHz
1.2dB ~ 2dB @ 1GHz
13.5dB
200mW
50 @ 7mA, 3V
65mA
150°C (TJ)
Surface Mount
SOT-143R
SOT-143R
DSC9G02C0L
Panasonic Electronic Components

TRANS RF NPN 20V 15MA SSMINI3

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Frequency - Transition: 650MHz
  • Noise Figure (dB Typ @ f): 3.3dB @ 100MHz
  • Gain: 24dB
  • Power - Max: 125mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 65 @ 1mA, 6V
  • Current - Collector (Ic) (Max): 15mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-89, SOT-490
  • Supplier Device Package: SSMini3-F3-B
pacchetto: SC-89, SOT-490
Azione4.512
20V
650MHz
3.3dB @ 100MHz
24dB
125mW
65 @ 1mA, 6V
15mA
150°C (TJ)
Surface Mount
SC-89, SOT-490
SSMini3-F3-B
hot 2SC5084-O(TE85L,F)
Toshiba Semiconductor and Storage

TRANS RF NPN 7GHZ 80MA SMINI

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 7GHz
  • Noise Figure (dB Typ @ f): 1.1dB @ 1GHz
  • Gain: 11dB
  • Power - Max: 150mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 20mA, 10V
  • Current - Collector (Ic) (Max): 80mA
  • Operating Temperature: 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: S-Mini
pacchetto: TO-236-3, SC-59, SOT-23-3
Azione95.628
12V
7GHz
1.1dB @ 1GHz
11dB
150mW
80 @ 20mA, 10V
80mA
125°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
S-Mini
PBR941,215
NXP

TRANSISTOR NPN UHF 50MA SOT23

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 10V
  • Frequency - Transition: 8GHz
  • Noise Figure (dB Typ @ f): 1.4dB ~ 2dB @ 1GHz ~ 2GHz
  • Gain: -
  • Power - Max: 360mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 6V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: TO-236AB (SOT23)
pacchetto: TO-236-3, SC-59, SOT-23-3
Azione3.520
10V
8GHz
1.4dB ~ 2dB @ 1GHz ~ 2GHz
-
360mW
50 @ 5mA, 6V
50mA
175°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
TO-236AB (SOT23)
BFU910FX
NXP

TRANS NPN WIDEBAND DFP4

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 9.5V
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): -
  • Gain: 13.5dB
  • Power - Max: 300mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Current - Collector (Ic) (Max): 15mA
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-343F
  • Supplier Device Package: SOT-343F
pacchetto: SOT-343F
Azione3.344
9.5V
-
-
13.5dB
300mW
-
15mA
-40°C ~ 150°C (TJ)
Surface Mount
SOT-343F
SOT-343F
hot KSP10BU
Fairchild/ON Semiconductor

TRANSISTOR RF NPN 25V TO-92

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 25V
  • Frequency - Transition: 650MHz
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: 350mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 4mA, 10V
  • Current - Collector (Ic) (Max): -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92-3
pacchetto: TO-226-3, TO-92-3 (TO-226AA)
Azione1.207.020
25V
650MHz
-
-
350mW
60 @ 4mA, 10V
-
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3
BFU690F,115
NXP

TRANSISTOR NPN SOT343F

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 5.5V
  • Frequency - Transition: 18GHz
  • Noise Figure (dB Typ @ f): 0.6dB ~ 0.7dG @ 1.5GHz ~ 2.4GHz
  • Gain: 15.5dB ~ 18.5dB
  • Power - Max: 230mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 20mA, 2V
  • Current - Collector (Ic) (Max): 100mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-343F
  • Supplier Device Package: 4-DFP
pacchetto: SOT-343F
Azione81.054
5.5V
18GHz
0.6dB ~ 0.7dG @ 1.5GHz ~ 2.4GHz
15.5dB ~ 18.5dB
230mW
90 @ 20mA, 2V
100mA
150°C (TJ)
Surface Mount
SOT-343F
4-DFP
PRF947,115
NXP

TRANSISTOR NPN 10V 8.5GHZ SOT323

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 10V
  • Frequency - Transition: 8.5GHz
  • Noise Figure (dB Typ @ f): 1.5dB ~ 2.1dB @ 1GHz ~ 2GHz
  • Gain: -
  • Power - Max: 250mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 6V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SOT-323-3
pacchetto: SC-70, SOT-323
Azione95.382
10V
8.5GHz
1.5dB ~ 2.1dB @ 1GHz ~ 2GHz
-
250mW
50 @ 5mA, 6V
50mA
175°C (TJ)
Surface Mount
SC-70, SOT-323
SOT-323-3