Pagina 8 - Transistor - Bipolari (BJT) - Singoli, pre-polarizzati | Dispositivi a semiconduttore discreti | Heisener Electronics
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Transistor - Bipolari (BJT) - Singoli, pre-polarizzati

Record 3.006
Pagina  8/101
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
Azione
Quantità
Current - Collector (Ic) (Max)
Voltage - Collector Emitter Breakdown (Max)
Resistor - Base (R1) (Ohms)
Resistor - Emitter Base (R2) (Ohms)
DC Current Gain (hFE) (Min) @ Ic, Vce
Vce Saturation (Max) @ Ib, Ic
Current - Collector Cutoff (Max)
Frequency - Transition
Power - Max
Mounting Type
Package / Case
Supplier Device Package
BCR503E6393HTSA1
Infineon Technologies

TRANS PREBIAS PNP SOT23

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 2.2k
  • Resistor - Emitter Base (R2) (Ohms): 2.2k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • Frequency - Transition: 100MHz
  • Power - Max: 330mW
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: PG-SOT23-3
pacchetto: TO-236-3, SC-59, SOT-23-3
Azione3.360
500mA
50V
2.2k
2.2k
40 @ 50mA, 5V
300mV @ 2.5mA, 50mA
100nA (ICBO)
100MHz
330mW
Surface Mount
TO-236-3, SC-59, SOT-23-3
PG-SOT23-3
BCR 191F E6327
Infineon Technologies

TRANS PREBIAS PNP 250MW TSFP-3

  • Transistor Type: PNP - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 22k
  • Resistor - Emitter Base (R2) (Ohms): 22k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • Frequency - Transition: 200MHz
  • Power - Max: 250mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-723
  • Supplier Device Package: PG-TSFP-3
pacchetto: SOT-723
Azione6.832
100mA
50V
22k
22k
50 @ 5mA, 5V
300mV @ 500µA, 10mA
100nA (ICBO)
200MHz
250mW
Surface Mount
SOT-723
PG-TSFP-3
RN1108ACT(TPL3)
Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 0.1W CST3

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 80mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 22k
  • Resistor - Emitter Base (R2) (Ohms): 47k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: -
  • Power - Max: 100mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-101, SOT-883
  • Supplier Device Package: CST3
pacchetto: SC-101, SOT-883
Azione4.960
80mA
50V
22k
47k
80 @ 10mA, 5V
150mV @ 250µA, 5mA
500nA
-
100mW
Surface Mount
SC-101, SOT-883
CST3
UNR911NG0L
Panasonic Electronic Components

TRANS PREBIAS PNP 125MW SSMINI3

  • Transistor Type: PNP - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 4.7k
  • Resistor - Emitter Base (R2) (Ohms): 47k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 80MHz
  • Power - Max: 125mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-89, SOT-490
  • Supplier Device Package: SSMini3-F3
pacchetto: SC-89, SOT-490
Azione6.784
100mA
50V
4.7k
47k
80 @ 5mA, 10V
250mV @ 300µA, 10mA
500nA
80MHz
125mW
Surface Mount
SC-89, SOT-490
SSMini3-F3
DDTA115GKA-7-F
Diodes Incorporated

TRANS PREBIAS PNP 200MW SC59-3

  • Transistor Type: PNP - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): -
  • Resistor - Emitter Base (R2) (Ohms): 100k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): 500nA (ICBO)
  • Frequency - Transition: 250MHz
  • Power - Max: 200mW
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SC-59-3
pacchetto: TO-236-3, SC-59, SOT-23-3
Azione4.544
100mA
50V
-
100k
82 @ 5mA, 5V
300mV @ 500µA, 10mA
500nA (ICBO)
250MHz
200mW
Surface Mount
TO-236-3, SC-59, SOT-23-3
SC-59-3
PDTC123YS,126
NXP

TRANS PREBIAS NPN 500MW TO92-3

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 2.2k
  • Resistor - Emitter Base (R2) (Ohms): 10k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): 1µA
  • Frequency - Transition: -
  • Power - Max: 500mW
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
pacchetto: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Azione3.456
100mA
50V
2.2k
10k
35 @ 5mA, 5V
150mV @ 500µA, 10mA
1µA
-
500mW
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
PDTA123YS,126
NXP

TRANS PREBIAS PNP 500MW TO92-3

  • Transistor Type: PNP - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 2.2k
  • Resistor - Emitter Base (R2) (Ohms): 10k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): 1µA
  • Frequency - Transition: -
  • Power - Max: 500mW
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
pacchetto: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Azione6.944
100mA
50V
2.2k
10k
35 @ 5mA, 5V
150mV @ 500µA, 10mA
1µA
-
500mW
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
FJY3006R
Fairchild/ON Semiconductor

TRANS PREBIAS NPN 200MW SOT523F

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 10k
  • Resistor - Emitter Base (R2) (Ohms): 47k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • Frequency - Transition: 250MHz
  • Power - Max: 200mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-89, SOT-490
  • Supplier Device Package: SOT-523F
pacchetto: SC-89, SOT-490
Azione7.776
100mA
50V
10k
47k
68 @ 5mA, 5V
300mV @ 500µA, 10mA
100nA (ICBO)
250MHz
200mW
Surface Mount
SC-89, SOT-490
SOT-523F
FJN4308RTA
Fairchild/ON Semiconductor

TRANS PREBIAS PNP 300MW TO92-3

  • Transistor Type: PNP - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 47k
  • Resistor - Emitter Base (R2) (Ohms): 22k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • Frequency - Transition: 200MHz
  • Power - Max: 300mW
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
pacchetto: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Azione4.528
100mA
50V
47k
22k
56 @ 5mA, 5V
300mV @ 500µA, 10mA
100nA (ICBO)
200MHz
300mW
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
UNR9117J0L
Panasonic Electronic Components

TRANS PREBIAS PNP 125MW SSMINI3

  • Transistor Type: PNP - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 22k
  • Resistor - Emitter Base (R2) (Ohms): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 80MHz
  • Power - Max: 125mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-89, SOT-490
  • Supplier Device Package: SSMini3-F1
pacchetto: SC-89, SOT-490
Azione3.248
100mA
50V
22k
-
160 @ 5mA, 10V
250mV @ 300µA, 10mA
500nA
80MHz
125mW
Surface Mount
SC-89, SOT-490
SSMini3-F1
hot UNR211D00L
Panasonic Electronic Components

TRANS PREBIAS PNP 200MW MINI3

  • Transistor Type: PNP - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 47k
  • Resistor - Emitter Base (R2) (Ohms): 10k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 80MHz
  • Power - Max: 200mW
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: Mini3-G1
pacchetto: TO-236-3, SC-59, SOT-23-3
Azione360.000
100mA
50V
47k
10k
30 @ 5mA, 10V
250mV @ 300µA, 10mA
500nA
80MHz
200mW
Surface Mount
TO-236-3, SC-59, SOT-23-3
Mini3-G1
PDTC143EE,115
NXP

TRANS PREBIAS NPN 150MW SC75

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 4.7k
  • Resistor - Emitter Base (R2) (Ohms): 4.7k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): 1µA
  • Frequency - Transition: -
  • Power - Max: 150mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-75, SOT-416
  • Supplier Device Package: SC-75
pacchetto: SC-75, SOT-416
Azione3.392
100mA
50V
4.7k
4.7k
30 @ 10mA, 5V
150mV @ 500µA, 10mA
1µA
-
150mW
Surface Mount
SC-75, SOT-416
SC-75
BCR158WH6327XTSA1
Infineon Technologies

TRANS PREBIAS PNP 250MW SOT323-3

  • Transistor Type: PNP - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 2.2k
  • Resistor - Emitter Base (R2) (Ohms): 47k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • Frequency - Transition: 200MHz
  • Power - Max: 250mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: PG-SOT323-3
pacchetto: SC-70, SOT-323
Azione3.216
100mA
50V
2.2k
47k
70 @ 5mA, 5V
300mV @ 500µA, 10mA
100nA (ICBO)
200MHz
250mW
Surface Mount
SC-70, SOT-323
PG-SOT323-3
BCR162E6327HTSA1
Infineon Technologies

TRANS PREBIAS PNP 200MW SOT23-3

  • Transistor Type: PNP - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 4.7k
  • Resistor - Emitter Base (R2) (Ohms): 4.7k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • Frequency - Transition: 200MHz
  • Power - Max: 200mW
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: PG-SOT23-3
pacchetto: TO-236-3, SC-59, SOT-23-3
Azione6.880
100mA
50V
4.7k
4.7k
20 @ 5mA, 5V
300mV @ 500µA, 10mA
100nA (ICBO)
200MHz
200mW
Surface Mount
TO-236-3, SC-59, SOT-23-3
PG-SOT23-3
NSBA123JF3T5G
ON Semiconductor

TRANS PREBIAS PNP 254MW SOT1123

  • Transistor Type: PNP - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 2.2k
  • Resistor - Emitter Base (R2) (Ohms): 47k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: -
  • Power - Max: 254mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-1123
  • Supplier Device Package: SOT-1123
pacchetto: SOT-1123
Azione5.712
100mA
50V
2.2k
47k
80 @ 5mA, 10V
250mV @ 300µA, 10mA
500nA
-
254mW
Surface Mount
SOT-1123
SOT-1123
PDTC143TMB,315
Nexperia USA Inc.

TRANS PREBIAS NPN 250MW 3DFN

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 4.7k
  • Resistor - Emitter Base (R2) (Ohms): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 1µA
  • Frequency - Transition: 230MHz
  • Power - Max: 250mW
  • Mounting Type: Surface Mount
  • Package / Case: 3-XFDFN
  • Supplier Device Package: 3-DFN1006B (0.6x1)
pacchetto: 3-XFDFN
Azione6.144
100mA
50V
4.7k
-
200 @ 1mA, 5V
100mV @ 250µA, 5mA
1µA
230MHz
250mW
Surface Mount
3-XFDFN
3-DFN1006B (0.6x1)
NSVMMUN2233LT3G
ON Semiconductor

TRANS PREBIAS NPN 0.246W SOT23

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 4.7k
  • Resistor - Emitter Base (R2) (Ohms): 47k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: -
  • Power - Max: 246mW
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3 (TO-236)
pacchetto: TO-236-3, SC-59, SOT-23-3
Azione7.488
100mA
50V
4.7k
47k
80 @ 5mA, 10V
250mV @ 1mA, 10mA
500nA
-
246mW
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3 (TO-236)
PDTC143TM,315
Nexperia USA Inc.

TRANS PREBIAS NPN 250MW SOT883

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 4.7k
  • Resistor - Emitter Base (R2) (Ohms): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 1µA
  • Frequency - Transition: -
  • Power - Max: 250mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-101, SOT-883
  • Supplier Device Package: DFN1006-3
pacchetto: SC-101, SOT-883
Azione4.032
100mA
50V
4.7k
-
200 @ 1mA, 5V
100mV @ 250µA, 5mA
1µA
-
250mW
Surface Mount
SC-101, SOT-883
DFN1006-3
hot MUN2230T1G
ON Semiconductor

TRANS PREBIAS NPN 338MW SC59

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 1k
  • Resistor - Emitter Base (R2) (Ohms): 1k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 3 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: -
  • Power - Max: 338mW
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SC-59
pacchetto: TO-236-3, SC-59, SOT-23-3
Azione1.242.840
100mA
50V
1k
1k
3 @ 5mA, 10V
250mV @ 5mA, 10mA
500nA
-
338mW
Surface Mount
TO-236-3, SC-59, SOT-23-3
SC-59
PDTA124EU,135
Nexperia USA Inc.

TRANS PREBIAS PNP 200MW SOT323

  • Transistor Type: PNP - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 22k
  • Resistor - Emitter Base (R2) (Ohms): 22k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): 100nA
  • Frequency - Transition: -
  • Power - Max: 200mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SOT-323-3
pacchetto: SC-70, SOT-323
Azione2.100
100mA
50V
22k
22k
60 @ 5mA, 5V
150mV @ 500µA, 10mA
100nA
-
200mW
Surface Mount
SC-70, SOT-323
SOT-323-3
RN1110ACT(TPL3)
Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 0.1W CST3

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 80mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 47k
  • Resistor - Emitter Base (R2) (Ohms): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • Frequency - Transition: -
  • Power - Max: 100mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-101, SOT-883
  • Supplier Device Package: CST3
pacchetto: SC-101, SOT-883
Azione5.456
80mA
50V
47k
-
120 @ 1mA, 5V
150mV @ 250µA, 5mA
100nA (ICBO)
-
100mW
Surface Mount
SC-101, SOT-883
CST3
hot MMUN2113LT1G
ON Semiconductor

TRANS PREBIAS PNP 0.4W SOT23-3

  • Transistor Type: PNP - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 47k
  • Resistor - Emitter Base (R2) (Ohms): 47k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: -
  • Power - Max: 246mW
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3 (TO-236)
pacchetto: TO-236-3, SC-59, SOT-23-3
Azione792.000
100mA
50V
47k
47k
80 @ 5mA, 10V
250mV @ 300µA, 10mA
500nA
-
246mW
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3 (TO-236)
DTD143TKT146
Rohm Semiconductor

TRANS PREBIAS NPN 200MW SMT3

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 40V
  • Resistor - Base (R1) (Ohms): 4.7k
  • Resistor - Emitter Base (R2) (Ohms): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
  • Current - Collector Cutoff (Max): 500nA (ICBO)
  • Frequency - Transition: 200MHz
  • Power - Max: 200mW
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SMT3
pacchetto: TO-236-3, SC-59, SOT-23-3
Azione2.224
500mA
40V
4.7k
-
100 @ 50mA, 5V
300mV @ 2.5mA, 50mA
500nA (ICBO)
200MHz
200mW
Surface Mount
TO-236-3, SC-59, SOT-23-3
SMT3
hot DDTA143EE-7-F
Diodes Incorporated

TRANS PREBIAS PNP 150MW SOT523

  • Transistor Type: PNP - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 4.7k
  • Resistor - Emitter Base (R2) (Ohms): 4.7k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 250MHz
  • Power - Max: 150mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-523
  • Supplier Device Package: SOT-523
pacchetto: SOT-523
Azione682.800
100mA
50V
4.7k
4.7k
20 @ 10mA, 5V
300mV @ 500µA, 10mA
500nA
250MHz
150mW
Surface Mount
SOT-523
SOT-523
DTA144GKAT146
Rohm Semiconductor

TRANS PREBIAS PNP 200MW SMT3

  • Transistor Type: PNP - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 47k
  • Resistor - Emitter Base (R2) (Ohms): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): 500nA (ICBO)
  • Frequency - Transition: 250MHz
  • Power - Max: 200mW
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SMT3
pacchetto: TO-236-3, SC-59, SOT-23-3
Azione5.856
100mA
50V
47k
-
68 @ 5mA, 5V
300mV @ 500µA, 10mA
500nA (ICBO)
250MHz
200mW
Surface Mount
TO-236-3, SC-59, SOT-23-3
SMT3
DDTC144GUA-7
Diodes Incorporated

TRANS PREBIAS NPN 200MW SOT323

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): -
  • Resistor - Emitter Base (R2) (Ohms): 47k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): 500nA (ICBO)
  • Frequency - Transition: 250MHz
  • Power - Max: 200mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SOT-323
pacchetto: SC-70, SOT-323
Azione24.660
100mA
50V
-
47k
68 @ 5mA, 5V
300mV @ 500µA, 10mA
500nA (ICBO)
250MHz
200mW
Surface Mount
SC-70, SOT-323
SOT-323
DDTA115GUA-7
Diodes Incorporated

TRANS PREBIAS PNP 200MW SOT323

  • Transistor Type: PNP - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): -
  • Resistor - Emitter Base (R2) (Ohms): 100k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): 500nA (ICBO)
  • Frequency - Transition: 250MHz
  • Power - Max: 200mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SOT-323
pacchetto: SC-70, SOT-323
Azione29.454
100mA
50V
-
100k
82 @ 5mA, 5V
300mV @ 500µA, 10mA
500nA (ICBO)
250MHz
200mW
Surface Mount
SC-70, SOT-323
SOT-323
DRC9124T0L
Panasonic Electronic Components

TRANS PREBIAS NPN 125MW SSMINI3

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 22k
  • Resistor - Emitter Base (R2) (Ohms): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: -
  • Power - Max: 125mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-89, SOT-490
  • Supplier Device Package: SSMini3-F3-B
pacchetto: SC-89, SOT-490
Azione44.640
100mA
50V
22k
-
160 @ 5mA, 10V
250mV @ 500µA, 10mA
500nA
-
125mW
Surface Mount
SC-89, SOT-490
SSMini3-F3-B
hot MUN2213T1G
ON Semiconductor

TRANS PREBIAS NPN 338MW SC59

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 47k
  • Resistor - Emitter Base (R2) (Ohms): 47k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: -
  • Power - Max: 338mW
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SC-59
pacchetto: TO-236-3, SC-59, SOT-23-3
Azione421.944
100mA
50V
47k
47k
80 @ 5mA, 10V
250mV @ 300µA, 10mA
500nA
-
338mW
Surface Mount
TO-236-3, SC-59, SOT-23-3
SC-59
PDTA114EU,115
Nexperia USA Inc.

TRANS PREBIAS PNP 200MW SOT323

  • Transistor Type: PNP - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 10k
  • Resistor - Emitter Base (R2) (Ohms): 10k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): 1µA
  • Frequency - Transition: 180MHz
  • Power - Max: 200mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SOT-323-3
pacchetto: SC-70, SOT-323
Azione70.218
100mA
50V
10k
10k
30 @ 5mA, 5V
150mV @ 500µA, 10mA
1µA
180MHz
200mW
Surface Mount
SC-70, SOT-323
SOT-323-3