Pagina 13 - Transistor - FET, MOSFET - Array | Dispositivi a semiconduttore discreti | Heisener Electronics
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Transistor - FET, MOSFET - Array

Record 3.259
Pagina  13/109
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
Azione
Quantità
FET Feature
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Power - Max
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
IRF7325
Infineon Technologies

MOSFET 2P-CH 12V 7.8A 8-SOIC

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: 7.8A
  • Rds On (Max) @ Id, Vgs: 24 mOhm @ 7.8A, 4.5V
  • Vgs(th) (Max) @ Id: 900mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 33nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 2020pF @ 10V
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione3.408
Logic Level Gate
12V
7.8A
24 mOhm @ 7.8A, 4.5V
900mV @ 250µA
33nC @ 4.5V
2020pF @ 10V
2W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
AON6922
Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 25V 18A/31A 8DFN

  • FET Type: 2 N-Channel (Half Bridge)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 18A, 31A
  • Rds On (Max) @ Id, Vgs: 3.8 mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id: 1.7V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2340pF @ 12.5V
  • Power - Max: 2W, 2.2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-WDFN Exposed Pad
  • Supplier Device Package: 8-DFN-EP (5x6)
pacchetto: 8-WDFN Exposed Pad
Azione3.168
Logic Level Gate
25V
18A, 31A
3.8 mOhm @ 20A, 10V
1.7V @ 250µA
32nC @ 10V
2340pF @ 12.5V
2W, 2.2W
-55°C ~ 150°C (TJ)
Surface Mount
8-WDFN Exposed Pad
8-DFN-EP (5x6)
AOC2802
Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 4WLCSP

  • FET Type: 2 N-Channel (Dual) Common Drain
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 10.4nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 1.3W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-UFBGA, WLCSP
  • Supplier Device Package: 4-WLCSP (1.57x1.57)
pacchetto: 4-UFBGA, WLCSP
Azione3.344
Logic Level Gate
-
-
-
-
10.4nC @ 4.5V
-
1.3W
-55°C ~ 150°C (TJ)
Surface Mount
4-UFBGA, WLCSP
4-WLCSP (1.57x1.57)
hot SIA911DJ-T1-GE3
Vishay Siliconix

MOSFET 2P-CH 20V 4.5A SC70-6

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 4.5A
  • Rds On (Max) @ Id, Vgs: 94 mOhm @ 2.8A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 12.8nC @ 8V
  • Input Capacitance (Ciss) (Max) @ Vds: 355pF @ 10V
  • Power - Max: 6.5W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK? SC-70-6 Dual
  • Supplier Device Package: PowerPAK? SC-70-6 Dual
pacchetto: PowerPAK? SC-70-6 Dual
Azione318.240
Standard
20V
4.5A
94 mOhm @ 2.8A, 4.5V
1V @ 250µA
12.8nC @ 8V
355pF @ 10V
6.5W
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK? SC-70-6 Dual
PowerPAK? SC-70-6 Dual
hot SI6943BDQ-T1-GE3
Vishay Siliconix

MOSFET 2P-CH 12V 2.3A 8TSSOP

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: 2.3A
  • Rds On (Max) @ Id, Vgs: 80 mOhm @ 2.5A, 4.5V
  • Vgs(th) (Max) @ Id: 800mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 800mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 8-TSSOP
pacchetto: 8-TSSOP (0.173", 4.40mm Width)
Azione73.212
Logic Level Gate
12V
2.3A
80 mOhm @ 2.5A, 4.5V
800mV @ 250µA
10nC @ 4.5V
-
800mW
-55°C ~ 150°C (TJ)
Surface Mount
8-TSSOP (0.173", 4.40mm Width)
8-TSSOP
SI3529DV-T1-E3
Vishay Siliconix

MOSFET N/P-CH 40V 2.5A 6-TSOP

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 2.5A, 1.95A
  • Rds On (Max) @ Id, Vgs: 125 mOhm @ 2.2A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 205pF @ 20V
  • Power - Max: 1.4W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
  • Supplier Device Package: 6-TSOP
pacchetto: SOT-23-6 Thin, TSOT-23-6
Azione5.696
Logic Level Gate
40V
2.5A, 1.95A
125 mOhm @ 2.2A, 10V
3V @ 250µA
7nC @ 10V
205pF @ 20V
1.4W
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-6 Thin, TSOT-23-6
6-TSOP
APTM20AM05FTG
Microsemi Corporation

MOSFET 2N-CH 200V 333A SP4

  • FET Type: 2 N-Channel (Half Bridge)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 333A
  • Rds On (Max) @ Id, Vgs: 5 mOhm @ 166.5A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 8mA
  • Gate Charge (Qg) (Max) @ Vgs: 1184nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 40800pF @ 25V
  • Power - Max: 1250W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP4
  • Supplier Device Package: SP4
pacchetto: SP4
Azione4.560
Standard
200V
333A
5 mOhm @ 166.5A, 10V
4V @ 8mA
1184nC @ 10V
40800pF @ 25V
1250W
-40°C ~ 150°C (TJ)
Chassis Mount
SP4
SP4
hot SI3850ADV-T1-E3
Vishay Siliconix

MOSFET N/P-CH 20V 1.4A 6TSOP

  • FET Type: N and P-Channel, Common Drain
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 1.4A, 960mA
  • Rds On (Max) @ Id, Vgs: 300 mOhm @ 500mA, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 1.08W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
  • Supplier Device Package: 6-TSOP
pacchetto: SOT-23-6 Thin, TSOT-23-6
Azione379.080
Logic Level Gate
20V
1.4A, 960mA
300 mOhm @ 500mA, 4.5V
1.5V @ 250µA
1.4nC @ 4.5V
-
1.08W
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-6 Thin, TSOT-23-6
6-TSOP
hot TPIC1502DW
Texas Instruments

MOSFET 20V 1.5A DMOS 24-DW

  • FET Type: -
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 1.5A
  • Rds On (Max) @ Id, Vgs: 300 mOhm @ 1.5A, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 2.1nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 98pF @ 14V
  • Power - Max: 2.86W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 24-SOIC (0.295", 7.50mm Width)
  • Supplier Device Package: 24-SOIC
pacchetto: 24-SOIC (0.295", 7.50mm Width)
Azione2.000
Logic Level Gate
20V
1.5A
300 mOhm @ 1.5A, 10V
2.2V @ 1mA
2.1nC @ 10V
98pF @ 14V
2.86W
-40°C ~ 150°C (TJ)
Surface Mount
24-SOIC (0.295", 7.50mm Width)
24-SOIC
PMWD20XN,118
NXP

MOSFET 2N-CH 20V 10.4A 8TSSOP

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 10.4A
  • Rds On (Max) @ Id, Vgs: 22 mOhm @ 4.2A, 10V
  • Vgs(th) (Max) @ Id: 1.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 11.6nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 740pF @ 16V
  • Power - Max: 4.2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 8-TSSOP
pacchetto: 8-TSSOP (0.173", 4.40mm Width)
Azione3.552
Logic Level Gate
20V
10.4A
22 mOhm @ 4.2A, 10V
1.5V @ 1mA
11.6nC @ 4.5V
740pF @ 16V
4.2W
-55°C ~ 150°C (TJ)
Surface Mount
8-TSSOP (0.173", 4.40mm Width)
8-TSSOP
hot STS5DNF20V
STMicroelectronics

MOSFET 2N-CH 20V 5A 8-SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 5A
  • Rds On (Max) @ Id, Vgs: 40 mOhm @ 2.5A, 4.5V
  • Vgs(th) (Max) @ Id: 600mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 11.5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 25V
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione5.474.472
Logic Level Gate
20V
5A
40 mOhm @ 2.5A, 4.5V
600mV @ 250µA
11.5nC @ 4.5V
460pF @ 25V
2W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
hot STS4C3F60L
STMicroelectronics

MOSFET N/P-CH 60V 4A/3A 8SOIC

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 4A, 3A
  • Rds On (Max) @ Id, Vgs: 55 mOhm @ 2A, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 20.4nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1030pF @ 25V
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione803.364
Logic Level Gate
60V
4A, 3A
55 mOhm @ 2A, 10V
1V @ 250µA
20.4nC @ 4.5V
1030pF @ 25V
2W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
BSO604NS2XUMA1
Infineon Technologies

MOSFET 2N-CH 55V 5A 8DSO

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 55V
  • Current - Continuous Drain (Id) @ 25°C: 5A
  • Rds On (Max) @ Id, Vgs: 35 mOhm @ 2.5A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 30µA
  • Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 25V
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: P-DSO-8
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione4.288
Logic Level Gate
55V
5A
35 mOhm @ 2.5A, 10V
2V @ 30µA
26nC @ 10V
870pF @ 25V
2W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
P-DSO-8
FDMD84100
Fairchild/ON Semiconductor

MOSFET 2N-CH 100V 7A 8-PQFN

  • FET Type: 2 N-Channel (Dual) Common Source
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 7A
  • Rds On (Max) @ Id, Vgs: 20 mOhm @ 7A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 980pF @ 50V
  • Power - Max: 2.1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerWDFN
  • Supplier Device Package: 8-PQFN (3.3x5)
pacchetto: 8-PowerWDFN
Azione5.312
Standard
100V
7A
20 mOhm @ 7A, 10V
4V @ 250µA
16nC @ 10V
980pF @ 50V
2.1W
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerWDFN
8-PQFN (3.3x5)
hot SI4228DY-T1-E3
Vishay Siliconix

MOSFET 2N-CH 25V 8A 8SO

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 8A
  • Rds On (Max) @ Id, Vgs: 18 mOhm @ 7A, 10V
  • Vgs(th) (Max) @ Id: 1.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 12.5V
  • Power - Max: 3.1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione377.388
Logic Level Gate
25V
8A
18 mOhm @ 7A, 10V
1.4V @ 250µA
25nC @ 10V
790pF @ 12.5V
3.1W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
hot ECH8667-TL-H
ON Semiconductor

MOSFET 2P-CH 30V 5.5A ECH8

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 5.5A
  • Rds On (Max) @ Id, Vgs: 39 mOhm @ 2.5A, 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V
  • Power - Max: 1.5W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Flat Lead
  • Supplier Device Package: 8-ECH
pacchetto: 8-SMD, Flat Lead
Azione129.696
Logic Level Gate
30V
5.5A
39 mOhm @ 2.5A, 10V
-
13nC @ 10V
600pF @ 10V
1.5W
150°C (TJ)
Surface Mount
8-SMD, Flat Lead
8-ECH
hot AON2802
Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 30V 2A 6DFN

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 2A
  • Rds On (Max) @ Id, Vgs: 60 mOhm @ 2A, 10V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 245pF @ 15V
  • Power - Max: 2.1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-WDFN Exposed Pad
  • Supplier Device Package: 6-DFN-EP (2x2)
pacchetto: 6-WDFN Exposed Pad
Azione72.000
Logic Level Gate
30V
2A
60 mOhm @ 2A, 10V
1.5V @ 250µA
10nC @ 10V
245pF @ 15V
2.1W
-55°C ~ 150°C (TJ)
Surface Mount
6-WDFN Exposed Pad
6-DFN-EP (2x2)
MCH6660-TL-W
ON Semiconductor

MOSFET N/P-CH 20V 2A/1.5A MCPH6

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate, 1.8V Drive
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 2A, 1.5A
  • Rds On (Max) @ Id, Vgs: 136 mOhm @ 1A, 4.5V
  • Vgs(th) (Max) @ Id: 1.3V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 1.8nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 128pF @ 10V
  • Power - Max: 800mW
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-SMD, Flat Leads
  • Supplier Device Package: 6-MCPH
pacchetto: 6-SMD, Flat Leads
Azione3.200
Logic Level Gate, 1.8V Drive
20V
2A, 1.5A
136 mOhm @ 1A, 4.5V
1.3V @ 1mA
1.8nC @ 4.5V
128pF @ 10V
800mW
150°C (TJ)
Surface Mount
6-SMD, Flat Leads
6-MCPH
STS5DP3LLH6
STMicroelectronics

MOSFET ARRAY 2P-CH 30V 8SO

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate, 4.5V Drive
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
  • Rds On (Max) @ Id, Vgs: 56 mOhm @ 2.5A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 639pF @ 25V
  • Power - Max: 2.7W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione2.640
Logic Level Gate, 4.5V Drive
30V
5A (Ta)
56 mOhm @ 2.5A, 10V
2.5V @ 250µA
6nC @ 4.5V
639pF @ 25V
2.7W
150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
hot CSD87384M
Texas Instruments

MOSFET 2N-CH 30V 30A 5PTAB

  • FET Type: 2 N-Channel (Half Bridge)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 30A
  • Rds On (Max) @ Id, Vgs: 7.7 mOhm @ 25A, 8V
  • Vgs(th) (Max) @ Id: 1.9V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 9.2nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1150pF @ 15V
  • Power - Max: 8W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 5-LGA
  • Supplier Device Package: 5-PTAB (5x3.5)
pacchetto: 5-LGA
Azione5.808
Logic Level Gate
30V
30A
7.7 mOhm @ 25A, 8V
1.9V @ 250µA
9.2nC @ 4.5V
1150pF @ 15V
8W
-55°C ~ 150°C (TJ)
Surface Mount
5-LGA
5-PTAB (5x3.5)
ALD110904PAL
Advanced Linear Devices Inc.

MOSFET 2N-CH 10.6V 8DIP

  • FET Type: 2 N-Channel (Dual) Matched Pair
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 10.6V
  • Current - Continuous Drain (Id) @ 25°C: 12mA, 3mA
  • Rds On (Max) @ Id, Vgs: 500 Ohm @ 4.4V
  • Vgs(th) (Max) @ Id: 420mV @ 1µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
  • Power - Max: 500mW
  • Operating Temperature: 0°C ~ 70°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 8-DIP (0.300", 7.62mm)
  • Supplier Device Package: 8-PDIP
pacchetto: 8-DIP (0.300", 7.62mm)
Azione3.984
Standard
10.6V
12mA, 3mA
500 Ohm @ 4.4V
420mV @ 1µA
-
2.5pF @ 5V
500mW
0°C ~ 70°C (TJ)
Through Hole
8-DIP (0.300", 7.62mm)
8-PDIP
hot IRF7904TRPBF
Infineon Technologies

MOSFET 2N-CH 30V 7.6A/11A 8-SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 7.6A, 11A
  • Rds On (Max) @ Id, Vgs: 16.2 mOhm @ 7.6A, 10V
  • Vgs(th) (Max) @ Id: 2.25V @ 25µA
  • Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 910pF @ 15V
  • Power - Max: 1.4W, 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione26.796
Logic Level Gate
30V
7.6A, 11A
16.2 mOhm @ 7.6A, 10V
2.25V @ 25µA
11nC @ 4.5V
910pF @ 15V
1.4W, 2W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
DMNH6042SSDQ-13
Diodes Incorporated

MOSFET BVDSS: 41V 60V SO-8 T&R 2

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 16.7A (Tc)
  • Rds On (Max) @ Id, Vgs: 50 mOhm @ 5.1A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 584pF @ 25V
  • Power - Max: 2.1W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione5.472
Standard
60V
16.7A (Tc)
50 mOhm @ 5.1A, 10V
3V @ 250µA
4.2nC @ 4.5V
584pF @ 25V
2.1W
-55°C ~ 175°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
DMC1016UPD-13
Diodes Incorporated

MOSFET 8V 24V POWERDI5060-8

  • FET Type: N and P-Channel
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 12V, 20V
  • Current - Continuous Drain (Id) @ 25°C: 9.5A, 8.7A
  • Rds On (Max) @ Id, Vgs: 17 mOhm @ 11.8A, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 32nC @ 8V
  • Input Capacitance (Ciss) (Max) @ Vds: 1454pF @ 6V
  • Power - Max: 2.3W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: PowerDI5060-8
pacchetto: 8-PowerTDFN
Azione7.184
Standard
12V, 20V
9.5A, 8.7A
17 mOhm @ 11.8A, 4.5V
1.5V @ 250µA
32nC @ 8V
1454pF @ 6V
2.3W
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerTDFN
PowerDI5060-8
hot DMG1024UV-7
Diodes Incorporated

MOSFET 2N-CH 20V 1.38A SOT563

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 1.38A
  • Rds On (Max) @ Id, Vgs: 450 mOhm @ 600mA, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.74nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 60.67pF @ 16V
  • Power - Max: 530mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-563
pacchetto: SOT-563, SOT-666
Azione36.600
Logic Level Gate
20V
1.38A
450 mOhm @ 600mA, 4.5V
1V @ 250µA
0.74nC @ 4.5V
60.67pF @ 16V
530mW
-55°C ~ 150°C (TJ)
Surface Mount
SOT-563, SOT-666
SOT-563
HS8K11TB
Rohm Semiconductor

MOSFET 2N-CH 30V 7A/11A HSML

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 7A, 11A
  • Rds On (Max) @ Id, Vgs: 17.9 mOhm @ 7A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 11.1nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 15V
  • Power - Max: 2W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-UDFN Exposed Pad
  • Supplier Device Package: HSML3030L10
pacchetto: 8-UDFN Exposed Pad
Azione29.604
Logic Level Gate
30V
7A, 11A
17.9 mOhm @ 7A, 10V
2.5V @ 1mA
11.1nC @ 10V
500pF @ 15V
2W
150°C (TJ)
Surface Mount
8-UDFN Exposed Pad
HSML3030L10
hot ZXMHC3A01T8TA
Diodes Incorporated

MOSFET 2N/2P-CH 30V 2.7A/2A SM8

  • FET Type: 2 N and 2 P-Channel (H-Bridge)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 2.7A, 2A
  • Rds On (Max) @ Id, Vgs: 120 mOhm @ 2.5A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 3.9nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 25V
  • Power - Max: 1.3W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-223-8
  • Supplier Device Package: SM8
pacchetto: SOT-223-8
Azione442.104
Logic Level Gate
30V
2.7A, 2A
120 mOhm @ 2.5A, 10V
3V @ 250µA
3.9nC @ 10V
190pF @ 25V
1.3W
-55°C ~ 150°C (TJ)
Surface Mount
SOT-223-8
SM8
BSS138PS,115
Nexperia USA Inc.

MOSFET 2N-CH 60V 0.32A 6TSSOP

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 320mA
  • Rds On (Max) @ Id, Vgs: 1.6 Ohm @ 300mA, 10V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V
  • Power - Max: 420mW
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: 6-TSSOP
pacchetto: 6-TSSOP, SC-88, SOT-363
Azione46.020
Logic Level Gate
60V
320mA
1.6 Ohm @ 300mA, 10V
1.5V @ 250µA
0.8nC @ 4.5V
50pF @ 10V
420mW
150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
6-TSSOP
ALD1106SBL
Advanced Linear Devices Inc.

MOSFET 4N-CH 10.6V 14SOIC

  • FET Type: 4 N-Channel, Matched Pair
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 10.6V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: 500 Ohm @ 5V
  • Vgs(th) (Max) @ Id: 1V @ 1µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 5V
  • Power - Max: 500mW
  • Operating Temperature: 0°C ~ 70°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 14-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 14-SOIC
pacchetto: 14-SOIC (0.154", 3.90mm Width)
Azione34.962
Standard
10.6V
-
500 Ohm @ 5V
1V @ 1µA
-
3pF @ 5V
500mW
0°C ~ 70°C (TJ)
Surface Mount
14-SOIC (0.154", 3.90mm Width)
14-SOIC
hot STL65DN3LLH5
STMicroelectronics

MOSFET 2N-CH 30V 65A POWERFLAT

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 65A
  • Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 9.5A, 10V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 25V
  • Power - Max: 60W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerVDFN
  • Supplier Device Package: PowerFlat? (5x6)
pacchetto: 8-PowerVDFN
Azione235.368
Logic Level Gate
30V
65A
6.5 mOhm @ 9.5A, 10V
1.5V @ 250µA
12nC @ 4.5V
1500pF @ 25V
60W
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerVDFN
PowerFlat? (5x6)