Pagina 43 - Transistor - FET, MOSFET - Array | Dispositivi a semiconduttore discreti

Numero di parte	Produttore	Descrizione	pacchetto	Azione	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
IRF9956	Infineon Technologies	MOSFET 2N-CH 30V 3.5A 8-SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3.5A Rds On (Max) @ Id, Vgs: 100 mOhm @ 2.2A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 15V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	pacchetto: 8-SOIC (0.154", 3.90mm Width)	Azione189.156	Logic Level Gate	30V	3.5A	100 mOhm @ 2.2A, 10V	1V @ 250µA	14nC @ 10V	190pF @ 15V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
AO5600EL	Alpha & Omega Semiconductor Inc.	MOSFET N/P-CH 20V SC89-6L FET Type: N and P-Channel Complementary FET Feature: Standard Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 600mA, 500mA Rds On (Max) @ Id, Vgs: 650 mOhm @ 500mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 45pF @ 10V Power - Max: 380mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SC-89-6	pacchetto: SOT-563, SOT-666	Azione409.488	Standard	20V	600mA, 500mA	650 mOhm @ 500mA, 4.5V	1V @ 250µA	1nC @ 4.5V	45pF @ 10V	380mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SC-89-6
NTGD3133PT1G	ON Semiconductor	MOSFET 2P-CH 20V 1.6A 6TSOP FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.6A Rds On (Max) @ Id, Vgs: 145 mOhm @ 2.2A, 4.5V Vgs(th) (Max) @ Id: 1.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 5.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 10V Power - Max: 560mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: 6-TSOP	pacchetto: SOT-23-6 Thin, TSOT-23-6	Azione837.552	Logic Level Gate	20V	1.6A	145 mOhm @ 2.2A, 4.5V	1.4V @ 250µA	5.5nC @ 4.5V	400pF @ 10V	560mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	6-TSOP
SI7983DP-T1-E3	Vishay Siliconix	MOSFET 2P-CH 20V 7.7A PPAK SO-8 FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 7.7A Rds On (Max) @ Id, Vgs: 17 mOhm @ 12A, 4.5V Vgs(th) (Max) @ Id: 1V @ 600µA Gate Charge (Qg) (Max) @ Vgs: 74nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.4W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK? SO-8 Dual Supplier Device Package: PowerPAK? SO-8 Dual	pacchetto: PowerPAK? SO-8 Dual	Azione3.424	Logic Level Gate	20V	7.7A	17 mOhm @ 12A, 4.5V	1V @ 600µA	74nC @ 4.5V	-	1.4W	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SO-8 Dual	PowerPAK? SO-8 Dual
SI5517DU-T1-E3	Vishay Siliconix	MOSFET N/P-CH 20V 6A CHIPFET FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 6A Rds On (Max) @ Id, Vgs: 39 mOhm @ 4.4A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16nC @ 8V Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 10V Power - Max: 8.3W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK? ChipFET? Dual Supplier Device Package: PowerPAK? ChipFet Dual	pacchetto: PowerPAK? ChipFET? Dual	Azione7.888	Logic Level Gate	20V	6A	39 mOhm @ 4.4A, 4.5V	1V @ 250µA	16nC @ 8V	520pF @ 10V	8.3W	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? ChipFET? Dual	PowerPAK? ChipFet Dual
APTM20DUM08TG	Microsemi Corporation	MOSFET 2N-CH 200V 208A SP4 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 208A Rds On (Max) @ Id, Vgs: 10 mOhm @ 104A, 10V Vgs(th) (Max) @ Id: 5V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 280nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 14400pF @ 25V Power - Max: 781W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP4 Supplier Device Package: SP4	pacchetto: SP4	Azione2.784	Standard	200V	208A	10 mOhm @ 104A, 10V	5V @ 5mA	280nC @ 10V	14400pF @ 25V	781W	-40°C ~ 150°C (TJ)	Chassis Mount	SP4	SP4
APTC60HM70RT3G	Microsemi Corporation	MOSFET 4N-CH 600V 39A SP3F FET Type: 4 N-Channel (H-Bridge) + Bridge Rectifier FET Feature: Standard Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 39A Rds On (Max) @ Id, Vgs: 70 mOhm @ 39A, 10V Vgs(th) (Max) @ Id: 3.9V @ 2.7mA Gate Charge (Qg) (Max) @ Vgs: 259nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7000pF @ 25V Power - Max: 250W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: - Package / Case: SP3 Supplier Device Package: SP3	pacchetto: SP3	Azione5.504	Standard	600V	39A	70 mOhm @ 39A, 10V	3.9V @ 2.7mA	259nC @ 10V	7000pF @ 25V	250W	-40°C ~ 150°C (TJ)	-	SP3	SP3
FMM60-02TF	IXYS	MOSFET 2N-CH 200V 33A I4-PAC FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 33A Rds On (Max) @ Id, Vgs: 40 mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3700pF @ 25V Power - Max: 125W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: i4-Pac?-5 Supplier Device Package: ISOPLUS i4-PAC?	pacchetto: i4-Pac?-5	Azione5.040	Standard	200V	33A	40 mOhm @ 30A, 10V	4.5V @ 250µA	90nC @ 10V	3700pF @ 25V	125W	-55°C ~ 150°C (TJ)	Through Hole	i4-Pac?-5	ISOPLUS i4-PAC?
DMNH6021SPDQ-13	Diodes Incorporated	MOSFET 2NCH 60V 8.2A POWERDI FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 8.2A, 32A Rds On (Max) @ Id, Vgs: 25 mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20.1nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1143pF @ 25V Power - Max: 1.5W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: PowerDI5060-8	pacchetto: 8-PowerTDFN	Azione6.240	Standard	60V	8.2A, 32A	25 mOhm @ 15A, 10V	3V @ 250µA	20.1nC @ 10V	1143pF @ 25V	1.5W	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerTDFN	PowerDI5060-8
EMH2408-TL-H	ON Semiconductor	MOSFET 2N-CH 20V 4A EMH8 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4A Rds On (Max) @ Id, Vgs: 45 mOhm @ 4A, 4.5V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 4.7nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 345pF @ 10V Power - Max: 1.2W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: 8-EMH	pacchetto: 8-SMD, Flat Lead	Azione5.200	Logic Level Gate	20V	4A	45 mOhm @ 4A, 4.5V	-	4.7nC @ 4.5V	345pF @ 10V	1.2W	150°C (TJ)	Surface Mount	8-SMD, Flat Lead	8-EMH
AON2812	Alpha & Omega Semiconductor Inc.	MOSFET 2N-CH 30V 4.5A FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.5A Rds On (Max) @ Id, Vgs: 37 mOhm @ 2A, 10V Vgs(th) (Max) @ Id: 1.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 235pF @ 15V Power - Max: 2.5W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Supplier Device Package: 6-DFN-EP (2x2)	pacchetto: 6-UDFN Exposed Pad	Azione3.888	Logic Level Gate	30V	4.5A	37 mOhm @ 2A, 10V	1.4V @ 250µA	10nC @ 10V	235pF @ 15V	2.5W	-55°C ~ 150°C (TJ)	Surface Mount	6-UDFN Exposed Pad	6-DFN-EP (2x2)
DMC2990UDJQ-7B	Diodes Incorporated	MOSFET BVDSS: 8V 24V SOT963 FET Type: N and P-Channel Complementary FET Feature: Standard Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 450mA (Ta), 310mA (Ta) Rds On (Max) @ Id, Vgs: 990 mOhm @ 100mA, 4.5V, 1.9 Ohm @ 100mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.5nC @ 4.5V, 0.4nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 27.6pF @ 15V, 28.7pF @ 15V Power - Max: 350mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-963 Supplier Device Package: SOT-963	pacchetto: SOT-963	Azione6.080	Standard	20V	450mA (Ta), 310mA (Ta)	990 mOhm @ 100mA, 4.5V, 1.9 Ohm @ 100mA, 4.5V	1V @ 250µA	0.5nC @ 4.5V, 0.4nC @ 4.5V	27.6pF @ 15V, 28.7pF @ 15V	350mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-963	SOT-963
DMN53D0LDW-13	Diodes Incorporated	MOSFET 2N-CH 50V 0.36A SOT363 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 360mA Rds On (Max) @ Id, Vgs: 1.6 Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 25V Power - Max: 310mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	pacchetto: 6-TSSOP, SC-88, SOT-363	Azione4.288	Logic Level Gate	50V	360mA	1.6 Ohm @ 500mA, 10V	1.5V @ 250µA	0.6nC @ 4.5V	46pF @ 25V	310mW	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SOT-363
ALD210800APCL	Advanced Linear Devices Inc.	MOSFET 4N-CH 10.6V 0.08A 16DIP FET Type: 4 N-Channel, Matched Pair FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 10.6V Current - Continuous Drain (Id) @ 25°C: 80mA Rds On (Max) @ Id, Vgs: 25 Ohm Vgs(th) (Max) @ Id: 10mV @ 10µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 15pF @ 5V Power - Max: 500mW Operating Temperature: 0°C ~ 70°C (TJ) Mounting Type: Through Hole Package / Case: 16-DIP (0.300", 7.62mm) Supplier Device Package: 16-PDIP	pacchetto: 16-DIP (0.300", 7.62mm)	Azione7.088	Logic Level Gate	10.6V	80mA	25 Ohm	10mV @ 10µA	-	15pF @ 5V	500mW	0°C ~ 70°C (TJ)	Through Hole	16-DIP (0.300", 7.62mm)	16-PDIP
FDS8949_F085	Fairchild/ON Semiconductor	MOSFET 2N-CH 40V 6A 8-SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 6A Rds On (Max) @ Id, Vgs: 29 mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 955pF @ 20V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	pacchetto: 8-SOIC (0.154", 3.90mm Width)	Azione4.688	Logic Level Gate	40V	6A	29 mOhm @ 6A, 10V	3V @ 250µA	11nC @ 5V	955pF @ 20V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
CTLDM303N-M832DS TR	Central Semiconductor Corp	MOSFET 2N-CH 30V 3.6A TLM832DS FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3.6A Rds On (Max) @ Id, Vgs: 40 mOhm @ 1.8A, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 590pF @ 10V Power - Max: 1.65W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TDFN Exposed Pad Supplier Device Package: TLM832DS	pacchetto: 8-TDFN Exposed Pad	Azione6.656	Standard	30V	3.6A	40 mOhm @ 1.8A, 4.5V	1.2V @ 250µA	13nC @ 4.5V	590pF @ 10V	1.65W	-55°C ~ 150°C (TJ)	Surface Mount	8-TDFN Exposed Pad	TLM832DS
AOC2804	Alpha & Omega Semiconductor Inc.	MOSFET 2N-CH FET Type: 2 N-Channel (Dual) Common Drain FET Feature: Standard Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 700mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-XFDFN Supplier Device Package: 4-AlphaDFN (1.57x1.57)	pacchetto: 4-XFDFN	Azione26.538	Standard	-	-	-	-	9.5nC @ 4.5V	-	700mW	-55°C ~ 150°C (TJ)	Surface Mount	4-XFDFN	4-AlphaDFN (1.57x1.57)
CMLDM7585 TR	Central Semiconductor Corp	MOSFET N/P-CH 20V 0.65A SOT563 FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 650mA Rds On (Max) @ Id, Vgs: 230 mOhm @ 600mA, 4.5V Vgs(th) (Max) @ Id: 1.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.58nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 100pF @ 16V Power - Max: 350mW Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	pacchetto: SOT-563, SOT-666	Azione22.854	Logic Level Gate	20V	650mA	230 mOhm @ 600mA, 4.5V	1.1V @ 250µA	1.58nC @ 4.5V	100pF @ 16V	350mW	-65°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SOT-563
FDMD85100	Fairchild/ON Semiconductor	MOSFET 2N-CH 100V FET Type: 2 N-Channel (Half Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 10.4A Rds On (Max) @ Id, Vgs: 9.9 mOhm @ 10.4A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2230pF @ 50V Power - Max: 2.2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Supplier Device Package: 8-Power 5x6	pacchetto: 8-PowerWDFN	Azione23.880	Standard	100V	10.4A	9.9 mOhm @ 10.4A, 10V	4V @ 250µA	31nC @ 10V	2230pF @ 50V	2.2W	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerWDFN	8-Power 5x6
SI7216DN-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 40V 6A PPAK 1212-8 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 6A Rds On (Max) @ Id, Vgs: 32 mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 670pF @ 20V Power - Max: 20.8W Operating Temperature: -50°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK? 1212-8 Dual Supplier Device Package: PowerPAK? 1212-8 Dual	pacchetto: PowerPAK? 1212-8 Dual	Azione22.800	Standard	40V	6A	32 mOhm @ 5A, 10V	3V @ 250µA	19nC @ 10V	670pF @ 20V	20.8W	-50°C ~ 150°C (TJ)	Surface Mount	PowerPAK? 1212-8 Dual	PowerPAK? 1212-8 Dual
PSMN038-100HSX	Nexperia USA Inc.	MOSFET 2N-CH 100V 21.4A LFPAK56D FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 21.4A (Ta) Rds On (Max) @ Id, Vgs: 37.6mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 25.9nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1533pF @ 25V Power - Max: 53W (Ta) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-1205, 8-LFPAK56 Supplier Device Package: LFPAK56D	pacchetto: -	Azione3.900	-	100V	21.4A (Ta)	37.6mOhm @ 5A, 10V	4V @ 1mA	25.9nC @ 10V	1533pF @ 25V	53W (Ta)	-55°C ~ 175°C (TJ)	Surface Mount	SOT-1205, 8-LFPAK56	LFPAK56D
AONP36332	Alpha & Omega Semiconductor Inc.	MOSFET 2N-CH 30V 24A/50A 8DFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 50A (Tc), 20A (Ta), 50A (Tc) Rds On (Max) @ Id, Vgs: 3.7mOhm @ 20A, 10V, 4.7mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 1.9V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V, 30nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1520pF @ 15V Power - Max: 3.4W (Ta), 33W (Tc), 3.1W (Ta), 30W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: 8-DFN-EP (3.3x3.3)	pacchetto: -	Azione9.000	-	30V	24A (Ta), 50A (Tc), 20A (Ta), 50A (Tc)	3.7mOhm @ 20A, 10V, 4.7mOhm @ 20A, 10V	1.9V @ 250µA	40nC @ 10V, 30nC @ 10V	1520pF @ 15V	3.4W (Ta), 33W (Tc), 3.1W (Ta), 30W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerVDFN	8-DFN-EP (3.3x3.3)
IPG20N06S2L65ATMA1	Infineon Technologies	MOSFET 2N-CH 55V 20A 8TDSON FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 20A Rds On (Max) @ Id, Vgs: 65mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 2V @ 14µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 410pF @ 25V Power - Max: 43W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: PG-TDSON-8-4	pacchetto: -	Azione80.658	Logic Level Gate	55V	20A	65mOhm @ 15A, 10V	2V @ 14µA	12nC @ 10V	410pF @ 25V	43W	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerVDFN	PG-TDSON-8-4
SIZ260DT-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 80V 8.9A 8PWRPAIR FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 8.9A (Ta), 24.7A (Tc), 8.9A (Ta), 24.6A (Tc) Rds On (Max) @ Id, Vgs: 24.5mOhm @ 10A, 10V, 24.7mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 820pF @ 40V Power - Max: 4.3W (Ta), 33W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Supplier Device Package: 8-PowerPair® (3.3x3.3)	pacchetto: -	Azione2.508	-	80V	8.9A (Ta), 24.7A (Tc), 8.9A (Ta), 24.6A (Tc)	24.5mOhm @ 10A, 10V, 24.7mOhm @ 10A, 10V	2.4V @ 250µA	27nC @ 10V	820pF @ 40V	4.3W (Ta), 33W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerWDFN	8-PowerPair® (3.3x3.3)
TSM6866SDCA	Taiwan Semiconductor Corporation	MOSFET 2N-CH 20V 6A 8TSSOP FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 4.5V Vgs(th) (Max) @ Id: 0.6V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 565pF @ 8V Power - Max: 1.6W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	pacchetto: -	Request a Quote	-	20V	6A (Ta)	30mOhm @ 6A, 4.5V	0.6V @ 250µA	7nC @ 4.5V	565pF @ 8V	1.6W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
BSS8402DW-7-G	Diodes Incorporated	MOSFET N/P-CH 60V/50V SOT363 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V, 50V Current - Continuous Drain (Id) @ 25°C: 115mA (Ta), 130mA (Ta) Rds On (Max) @ Id, Vgs: 13.5Ohm @ 500mA, 10V, 10Ohm @ 100mA, 5V Vgs(th) (Max) @ Id: 2.5V @ 250µA, 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V, 45pF @ 25V Power - Max: 200mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	pacchetto: -	Request a Quote	-	60V, 50V	115mA (Ta), 130mA (Ta)	13.5Ohm @ 500mA, 10V, 10Ohm @ 100mA, 5V	2.5V @ 250µA, 2V @ 1mA	-	50pF @ 25V, 45pF @ 25V	200mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SOT-363
SI4500BDY-T1-GE3	Vishay Siliconix	MOSFET N/P-CH 20V 6.6A 8-SOIC FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 6.6A, 3.8A Rds On (Max) @ Id, Vgs: 20mOhm @ 9.1A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.3W Operating Temperature: - Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	pacchetto: -	Request a Quote	Logic Level Gate	20V	6.6A, 3.8A	20mOhm @ 9.1A, 4.5V	1.5V @ 250µA	17nC @ 4.5V	-	1.3W	-	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
OP241-005	WeEn Semiconductors	MOSFET FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	pacchetto: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
MCACD50N06YHE3-TP	Micro Commercial Co	MOSFET FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2100pF @ 25V Power - Max: 69W (Tj) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerLDFN Supplier Device Package: PDFN5060-8D	pacchetto: -	Request a Quote	-	60V	50A (Tc)	9mOhm @ 20A, 10V	2.5V @ 250µA	30nC @ 10V	2100pF @ 25V	69W (Tj)	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerLDFN	PDFN5060-8D
2N7002KV-TP	Micro Commercial Co	MOSFET 2N-CH 60V 0.34A SOT563 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 340mA Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 40pF @ 10V Power - Max: 150mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	pacchetto: -	Azione7.200	-	60V	340mA	5Ohm @ 500mA, 10V	2.5V @ 1mA	-	40pF @ 10V	150mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SOT-563

IRF9956

Infineon Technologies

MOSFET 2N-CH 30V 3.5A 8-SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.5A
Rds On (Max) @ Id, Vgs: 100 mOhm @ 2.2A, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 15V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

pacchetto: 8-SOIC (0.154", 3.90mm Width)

Azione189.156

Logic Level Gate

30V

3.5A

100 mOhm @ 2.2A, 10V

1V @ 250µA

14nC @ 10V

190pF @ 15V

2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

AO5600EL

Alpha & Omega Semiconductor Inc.

MOSFET N/P-CH 20V SC89-6L

FET Type: N and P-Channel Complementary
FET Feature: Standard
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 600mA, 500mA
Rds On (Max) @ Id, Vgs: 650 mOhm @ 500mA, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 45pF @ 10V
Power - Max: 380mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SC-89-6

pacchetto: SOT-563, SOT-666

Azione409.488

Standard

20V

600mA, 500mA

650 mOhm @ 500mA, 4.5V

1V @ 250µA

1nC @ 4.5V

45pF @ 10V

380mW

-55°C ~ 150°C (TJ)

Surface Mount

SOT-563, SOT-666

SC-89-6

NTGD3133PT1G

ON Semiconductor

MOSFET 2P-CH 20V 1.6A 6TSOP

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.6A
Rds On (Max) @ Id, Vgs: 145 mOhm @ 2.2A, 4.5V
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 5.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 10V
Power - Max: 560mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: 6-TSOP

pacchetto: SOT-23-6 Thin, TSOT-23-6

Azione837.552

Logic Level Gate

20V

1.6A

145 mOhm @ 2.2A, 4.5V

1.4V @ 250µA

5.5nC @ 4.5V

400pF @ 10V

560mW

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-6 Thin, TSOT-23-6

6-TSOP

SI7983DP-T1-E3

Vishay Siliconix

MOSFET 2P-CH 20V 7.7A PPAK SO-8

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 7.7A
Rds On (Max) @ Id, Vgs: 17 mOhm @ 12A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 600µA
Gate Charge (Qg) (Max) @ Vgs: 74nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.4W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK? SO-8 Dual
Supplier Device Package: PowerPAK? SO-8 Dual

pacchetto: PowerPAK? SO-8 Dual

Azione3.424

Logic Level Gate

20V

7.7A

17 mOhm @ 12A, 4.5V

1V @ 600µA

74nC @ 4.5V

-

1.4W

-55°C ~ 150°C (TJ)

Surface Mount

PowerPAK? SO-8 Dual

SI5517DU-T1-E3

Vishay Siliconix

MOSFET N/P-CH 20V 6A CHIPFET

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6A
Rds On (Max) @ Id, Vgs: 39 mOhm @ 4.4A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 10V
Power - Max: 8.3W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK? ChipFET? Dual
Supplier Device Package: PowerPAK? ChipFet Dual

pacchetto: PowerPAK? ChipFET? Dual

Azione7.888

Logic Level Gate

20V

6A

39 mOhm @ 4.4A, 4.5V

1V @ 250µA

16nC @ 8V

520pF @ 10V

8.3W

-55°C ~ 150°C (TJ)

Surface Mount

PowerPAK? ChipFET? Dual

PowerPAK? ChipFet Dual

APTM20DUM08TG

Microsemi Corporation

MOSFET 2N-CH 200V 208A SP4

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 208A
Rds On (Max) @ Id, Vgs: 10 mOhm @ 104A, 10V
Vgs(th) (Max) @ Id: 5V @ 5mA
Gate Charge (Qg) (Max) @ Vgs: 280nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 14400pF @ 25V
Power - Max: 781W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP4
Supplier Device Package: SP4

pacchetto: SP4

Azione2.784

Standard

200V

208A

10 mOhm @ 104A, 10V

5V @ 5mA

280nC @ 10V

14400pF @ 25V

781W

-40°C ~ 150°C (TJ)

Chassis Mount

SP4

APTC60HM70RT3G

Microsemi Corporation

MOSFET 4N-CH 600V 39A SP3F

FET Type: 4 N-Channel (H-Bridge) + Bridge Rectifier
FET Feature: Standard
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 39A
Rds On (Max) @ Id, Vgs: 70 mOhm @ 39A, 10V
Vgs(th) (Max) @ Id: 3.9V @ 2.7mA
Gate Charge (Qg) (Max) @ Vgs: 259nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 7000pF @ 25V
Power - Max: 250W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: -
Package / Case: SP3
Supplier Device Package: SP3

pacchetto: SP3

Azione5.504

Standard

600V

39A

70 mOhm @ 39A, 10V

3.9V @ 2.7mA

259nC @ 10V

7000pF @ 25V

250W

-40°C ~ 150°C (TJ)

-

SP3

FMM60-02TF

IXYS

MOSFET 2N-CH 200V 33A I4-PAC

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 33A
Rds On (Max) @ Id, Vgs: 40 mOhm @ 30A, 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 3700pF @ 25V
Power - Max: 125W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: i4-Pac?-5
Supplier Device Package: ISOPLUS i4-PAC?

pacchetto: i4-Pac?-5

Azione5.040

Standard

200V

33A

40 mOhm @ 30A, 10V

4.5V @ 250µA

90nC @ 10V

3700pF @ 25V

125W

-55°C ~ 150°C (TJ)

Through Hole

i4-Pac?-5

ISOPLUS i4-PAC?

DMNH6021SPDQ-13

Diodes Incorporated

MOSFET 2NCH 60V 8.2A POWERDI

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 8.2A, 32A
Rds On (Max) @ Id, Vgs: 25 mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20.1nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1143pF @ 25V
Power - Max: 1.5W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: PowerDI5060-8

pacchetto: 8-PowerTDFN

Azione6.240

Standard

60V

8.2A, 32A

25 mOhm @ 15A, 10V

3V @ 250µA

20.1nC @ 10V

1143pF @ 25V

1.5W

-55°C ~ 175°C (TJ)

Surface Mount

8-PowerTDFN

PowerDI5060-8

EMH2408-TL-H

ON Semiconductor

MOSFET 2N-CH 20V 4A EMH8

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4A
Rds On (Max) @ Id, Vgs: 45 mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: 4.7nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 345pF @ 10V
Power - Max: 1.2W
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: 8-EMH

pacchetto: 8-SMD, Flat Lead

Azione5.200

Logic Level Gate

20V

4A

45 mOhm @ 4A, 4.5V

-

4.7nC @ 4.5V

345pF @ 10V

1.2W

150°C (TJ)

Surface Mount

8-SMD, Flat Lead

8-EMH

AON2812

Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 30V 4.5A

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Rds On (Max) @ Id, Vgs: 37 mOhm @ 2A, 10V
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 235pF @ 15V
Power - Max: 2.5W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Supplier Device Package: 6-DFN-EP (2x2)

pacchetto: 6-UDFN Exposed Pad

Azione3.888

Logic Level Gate

30V

4.5A

37 mOhm @ 2A, 10V

1.4V @ 250µA

10nC @ 10V

235pF @ 15V

2.5W

-55°C ~ 150°C (TJ)

Surface Mount

6-UDFN Exposed Pad

6-DFN-EP (2x2)

DMC2990UDJQ-7B

Diodes Incorporated

MOSFET BVDSS: 8V 24V SOT963

FET Type: N and P-Channel Complementary
FET Feature: Standard
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 450mA (Ta), 310mA (Ta)
Rds On (Max) @ Id, Vgs: 990 mOhm @ 100mA, 4.5V, 1.9 Ohm @ 100mA, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.5nC @ 4.5V, 0.4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 27.6pF @ 15V, 28.7pF @ 15V
Power - Max: 350mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-963
Supplier Device Package: SOT-963

pacchetto: SOT-963

Azione6.080

Standard

20V

450mA (Ta), 310mA (Ta)

990 mOhm @ 100mA, 4.5V, 1.9 Ohm @ 100mA, 4.5V

1V @ 250µA

0.5nC @ 4.5V, 0.4nC @ 4.5V

27.6pF @ 15V, 28.7pF @ 15V

350mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

SOT-963

DMN53D0LDW-13

Diodes Incorporated

MOSFET 2N-CH 50V 0.36A SOT363

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 360mA
Rds On (Max) @ Id, Vgs: 1.6 Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 25V
Power - Max: 310mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363

pacchetto: 6-TSSOP, SC-88, SOT-363

Azione4.288

Logic Level Gate

50V

360mA

1.6 Ohm @ 500mA, 10V

1.5V @ 250µA

0.6nC @ 4.5V

46pF @ 25V

310mW

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SOT-363

ALD210800APCL

Advanced Linear Devices Inc.

MOSFET 4N-CH 10.6V 0.08A 16DIP

FET Type: 4 N-Channel, Matched Pair
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: 80mA
Rds On (Max) @ Id, Vgs: 25 Ohm
Vgs(th) (Max) @ Id: 10mV @ 10µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 15pF @ 5V
Power - Max: 500mW
Operating Temperature: 0°C ~ 70°C (TJ)
Mounting Type: Through Hole
Package / Case: 16-DIP (0.300", 7.62mm)
Supplier Device Package: 16-PDIP

pacchetto: 16-DIP (0.300", 7.62mm)

Azione7.088

Logic Level Gate

10.6V

80mA

25 Ohm

10mV @ 10µA

-

15pF @ 5V

500mW

0°C ~ 70°C (TJ)

Through Hole

16-DIP (0.300", 7.62mm)

16-PDIP

FDS8949_F085

Fairchild/ON Semiconductor

MOSFET 2N-CH 40V 6A 8-SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 6A
Rds On (Max) @ Id, Vgs: 29 mOhm @ 6A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 955pF @ 20V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

pacchetto: 8-SOIC (0.154", 3.90mm Width)

Azione4.688

Logic Level Gate

40V

6A

29 mOhm @ 6A, 10V

3V @ 250µA

11nC @ 5V

955pF @ 20V

2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

CTLDM303N-M832DS TR

Central Semiconductor Corp

MOSFET 2N-CH 30V 3.6A TLM832DS

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.6A
Rds On (Max) @ Id, Vgs: 40 mOhm @ 1.8A, 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 590pF @ 10V
Power - Max: 1.65W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TDFN Exposed Pad
Supplier Device Package: TLM832DS

pacchetto: 8-TDFN Exposed Pad

Azione6.656

Standard

30V

3.6A

40 mOhm @ 1.8A, 4.5V

1.2V @ 250µA

13nC @ 4.5V

590pF @ 10V

1.65W

-55°C ~ 150°C (TJ)

Surface Mount

8-TDFN Exposed Pad

TLM832DS

AOC2804

Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH

FET Type: 2 N-Channel (Dual) Common Drain
FET Feature: Standard
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 700mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-XFDFN
Supplier Device Package: 4-AlphaDFN (1.57x1.57)

pacchetto: 4-XFDFN

Azione26.538

Standard

-

9.5nC @ 4.5V

-

700mW

-55°C ~ 150°C (TJ)

Surface Mount

4-XFDFN

4-AlphaDFN (1.57x1.57)

CMLDM7585 TR

Central Semiconductor Corp

MOSFET N/P-CH 20V 0.65A SOT563

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 650mA
Rds On (Max) @ Id, Vgs: 230 mOhm @ 600mA, 4.5V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.58nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 100pF @ 16V
Power - Max: 350mW
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-563

pacchetto: SOT-563, SOT-666

Azione22.854

Logic Level Gate

20V

650mA

230 mOhm @ 600mA, 4.5V

1.1V @ 250µA

1.58nC @ 4.5V

100pF @ 16V

350mW

-65°C ~ 150°C (TJ)

Surface Mount

SOT-563, SOT-666

SOT-563

FDMD85100

Fairchild/ON Semiconductor

MOSFET 2N-CH 100V

FET Type: 2 N-Channel (Half Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 10.4A
Rds On (Max) @ Id, Vgs: 9.9 mOhm @ 10.4A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2230pF @ 50V
Power - Max: 2.2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Supplier Device Package: 8-Power 5x6

pacchetto: 8-PowerWDFN

Azione23.880

Standard

100V

10.4A

9.9 mOhm @ 10.4A, 10V

4V @ 250µA

31nC @ 10V

2230pF @ 50V

2.2W

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerWDFN

8-Power 5x6

SI7216DN-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 40V 6A PPAK 1212-8

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 6A
Rds On (Max) @ Id, Vgs: 32 mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 670pF @ 20V
Power - Max: 20.8W
Operating Temperature: -50°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK? 1212-8 Dual
Supplier Device Package: PowerPAK? 1212-8 Dual

pacchetto: PowerPAK? 1212-8 Dual

Azione22.800

Standard

40V

6A

32 mOhm @ 5A, 10V

3V @ 250µA

19nC @ 10V

670pF @ 20V

20.8W

-50°C ~ 150°C (TJ)

Surface Mount

PowerPAK? 1212-8 Dual

PSMN038-100HSX

Nexperia USA Inc.

MOSFET 2N-CH 100V 21.4A LFPAK56D

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 21.4A (Ta)
Rds On (Max) @ Id, Vgs: 37.6mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 25.9nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1533pF @ 25V
Power - Max: 53W (Ta)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1205, 8-LFPAK56
Supplier Device Package: LFPAK56D

pacchetto: -

Azione3.900

-

100V

21.4A (Ta)

37.6mOhm @ 5A, 10V

4V @ 1mA

25.9nC @ 10V

1533pF @ 25V

53W (Ta)

-55°C ~ 175°C (TJ)

Surface Mount

SOT-1205, 8-LFPAK56

LFPAK56D

AONP36332

Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 30V 24A/50A 8DFN

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 50A (Tc), 20A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 20A, 10V, 4.7mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 1.9V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V, 30nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1520pF @ 15V
Power - Max: 3.4W (Ta), 33W (Tc), 3.1W (Ta), 30W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Supplier Device Package: 8-DFN-EP (3.3x3.3)

pacchetto: -

Azione9.000

-

30V

24A (Ta), 50A (Tc), 20A (Ta), 50A (Tc)

3.7mOhm @ 20A, 10V, 4.7mOhm @ 20A, 10V

1.9V @ 250µA

40nC @ 10V, 30nC @ 10V

1520pF @ 15V

3.4W (Ta), 33W (Tc), 3.1W (Ta), 30W (Tc)

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerVDFN

8-DFN-EP (3.3x3.3)

IPG20N06S2L65ATMA1

Infineon Technologies

MOSFET 2N-CH 55V 20A 8TDSON

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 20A
Rds On (Max) @ Id, Vgs: 65mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2V @ 14µA
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 410pF @ 25V
Power - Max: 43W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Supplier Device Package: PG-TDSON-8-4

pacchetto: -

Azione80.658

Logic Level Gate

55V

20A

65mOhm @ 15A, 10V

2V @ 14µA

12nC @ 10V

410pF @ 25V

43W

-55°C ~ 175°C (TJ)

Surface Mount

8-PowerVDFN

PG-TDSON-8-4

SIZ260DT-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 80V 8.9A 8PWRPAIR

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 8.9A (Ta), 24.7A (Tc), 8.9A (Ta), 24.6A (Tc)
Rds On (Max) @ Id, Vgs: 24.5mOhm @ 10A, 10V, 24.7mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 820pF @ 40V
Power - Max: 4.3W (Ta), 33W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Supplier Device Package: 8-PowerPair® (3.3x3.3)

pacchetto: -

Azione2.508

-

80V

8.9A (Ta), 24.7A (Tc), 8.9A (Ta), 24.6A (Tc)

24.5mOhm @ 10A, 10V, 24.7mOhm @ 10A, 10V

2.4V @ 250µA

27nC @ 10V

820pF @ 40V

4.3W (Ta), 33W (Tc)

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerWDFN

8-PowerPair® (3.3x3.3)

TSM6866SDCA

Taiwan Semiconductor Corporation

MOSFET 2N-CH 20V 6A 8TSSOP

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 4.5V
Vgs(th) (Max) @ Id: 0.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 565pF @ 8V
Power - Max: 1.6W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP

pacchetto: -

Request a Quote

-

20V

6A (Ta)

30mOhm @ 6A, 4.5V

0.6V @ 250µA

7nC @ 4.5V

565pF @ 8V

1.6W (Tc)

-55°C ~ 150°C (TJ)

Surface Mount

8-TSSOP (0.173", 4.40mm Width)

8-TSSOP

BSS8402DW-7-G

Diodes Incorporated

MOSFET N/P-CH 60V/50V SOT363

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 60V, 50V
Current - Continuous Drain (Id) @ 25°C: 115mA (Ta), 130mA (Ta)
Rds On (Max) @ Id, Vgs: 13.5Ohm @ 500mA, 10V, 10Ohm @ 100mA, 5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA, 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V, 45pF @ 25V
Power - Max: 200mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363

pacchetto: -

Request a Quote

-

60V, 50V

115mA (Ta), 130mA (Ta)

13.5Ohm @ 500mA, 10V, 10Ohm @ 100mA, 5V

2.5V @ 250µA, 2V @ 1mA

-

50pF @ 25V, 45pF @ 25V

200mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SOT-363

SI4500BDY-T1-GE3

Vishay Siliconix

MOSFET N/P-CH 20V 6.6A 8-SOIC

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6.6A, 3.8A
Rds On (Max) @ Id, Vgs: 20mOhm @ 9.1A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.3W
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

pacchetto: -

Request a Quote

Logic Level Gate

20V

6.6A, 3.8A

20mOhm @ 9.1A, 4.5V

1.5V @ 250µA

17nC @ 4.5V

-

1.3W

-

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

OP241-005

WeEn Semiconductors

MOSFET

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

pacchetto: -

Request a Quote

-

MCACD50N06YHE3-TP

Micro Commercial Co

MOSFET

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2100pF @ 25V
Power - Max: 69W (Tj)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerLDFN
Supplier Device Package: PDFN5060-8D

pacchetto: -

Request a Quote

-

60V

50A (Tc)

9mOhm @ 20A, 10V

2.5V @ 250µA

30nC @ 10V

2100pF @ 25V

69W (Tj)

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerLDFN

PDFN5060-8D

2N7002KV-TP

Micro Commercial Co

MOSFET 2N-CH 60V 0.34A SOT563

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 340mA
Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 40pF @ 10V
Power - Max: 150mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-563

pacchetto: -

Azione7.200

-

60V

340mA

5Ohm @ 500mA, 10V

2.5V @ 1mA

-

40pF @ 10V

150mW

-55°C ~ 150°C (TJ)

Surface Mount

SOT-563, SOT-666

SOT-563