Immagine |
Numero di parte |
Produttore |
Descrizione |
pacchetto |
Azione |
Quantità |
FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Power - Max | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
MOSFET 2N-CH 20V 10A/12A 8-SOIC
|
pacchetto: 8-SOIC (0.154", 3.90mm Width) |
Azione5.952 |
|
Logic Level Gate | 20V | 10A, 12A | 13.4 mOhm @ 10A, 10V | 2.55V @ 250µA | 11nC @ 4.5V | 900pF @ 10V | 2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
||
Infineon Technologies |
MOSFET 2P-CH 20V 7A 8SOIC
|
pacchetto: 8-SOIC (0.154", 3.90mm Width) |
Azione5.296 |
|
Logic Level Gate | 20V | 7A | 30 mOhm @ 7A, 4.5V | 1.2V @ 60µA | 35.8nC @ 4.5V | 1513pF @ 15V | 2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | P-DSO-8 |
||
Infineon Technologies |
MOSFET 2N-CH 20V 4.8A TSSOP-8
|
pacchetto: 8-TSSOP (0.173", 4.40mm Width) |
Azione45.300 |
|
Logic Level Gate | 20V | 4.8A | 35 mOhm @ 4.8A, 4.5V | 1.2V @ 250µA | 23nC @ 4.5V | 1340pF @ 15V | 1.2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-TSSOP (0.173", 4.40mm Width) | 8-TSSOP |
||
Trinamic Motion Control GmbH |
MOSFET N/P-CH 60V TO252-4
|
pacchetto: TO-252-5, DPak (4 Leads + Tab), TO-252AD |
Azione7.808 |
|
Standard | 60V | 6.6A, 4.7A | 36 mOhm @ 6A, 10V | 3V @ 250µA | 19.2nC @ 4.5V | 1560pF @ 25V | 3.13W | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-5, DPak (4 Leads + Tab), TO-252AD | TO-252-4L |
||
ON Semiconductor |
MOSFET 2N-CH 24V 6A EMH8
|
pacchetto: 8-SMD, Flat Lead |
Azione72.000 |
|
Logic Level Gate | 24V | 6A | 27 mOhm @ 3A, 4.5V | - | 6.3nC @ 4.5V | - | 1.4W | 150°C (TJ) | Surface Mount | 8-SMD, Flat Lead | 8-EMH |
||
Vishay Siliconix |
MOSFET 2P-CH 30V 8-TSSOP
|
pacchetto: 8-TSSOP (0.173", 4.40mm Width) |
Azione85.152 |
|
Logic Level Gate | 30V | - | 45 mOhm @ 3.5A, 10V | 1V @ 250µA (Min) | 30nC @ 10V | - | 1W | -55°C ~ 150°C (TJ) | Surface Mount | 8-TSSOP (0.173", 4.40mm Width) | 8-TSSOP |
||
Fairchild/ON Semiconductor |
MOSFET 2N-CH 30V 80A EPM15
|
pacchetto: EPM15 |
Azione7.680 |
|
Standard | 30V | 80A | 1.6 mOhm @ 40A, 10V | 3V @ 250µA | 295nC @ 10V | 11535pF @ 15V | - | -40°C ~ 150°C (TJ) | Through Hole | EPM15 | EPM15 |
||
Alpha & Omega Semiconductor Inc. |
MOSFET 2N-CH 30V 11A/8A 8SOIC
|
pacchetto: 8-SOIC (0.154", 3.90mm Width) |
Azione808.692 |
|
Logic Level Gate | 30V | 11A, 8A | 12.5 mOhm @ 11A, 10V | 2.1V @ 250µA | 24nC @ 10V | 1400pF @ 15V | 2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
||
IXYS |
MOSFET 2N-CH 75V 150A I4-PAC-5
|
pacchetto: i4-Pac?-5 |
Azione3.504 |
|
Standard | 75V | 150A | 4.2 mOhm @ 120A, 10V | 4V @ 1mA | 225nC @ 10V | - | - | -55°C ~ 175°C (TJ) | Through Hole | i4-Pac?-5 | ISOPLUS i4-PAC? |
||
Infineon Technologies |
MOSFET 2P-CH 30V 4.9A 8-SOIC
|
pacchetto: 8-SOIC (0.154", 3.90mm Width) |
Azione5.696 |
|
Logic Level Gate | 30V | 4.9A | 58 mOhm @ 4.9A, 10V | 1V @ 250µA | 34nC @ 10V | 710pF @ 25V | 2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
||
Microsemi Corporation |
MOSFET 4N-CH 200V 208A SP6
|
pacchetto: SP6 |
Azione5.248 |
|
Standard | 200V | 208A | 10 mOhm @ 104A, 10V | 5V @ 5mA | 280nC @ 10V | 14400pF @ 25V | 781W | -40°C ~ 150°C (TJ) | Chassis Mount | SP6 | SP6 |
||
Sanken |
MOSFET 6N-CH 250V 7A 12-SIP
|
pacchetto: 12-SIP, Exposed Tab |
Azione3.744 |
|
Standard | 250V | 7A | 500 mOhm @ 3.5A, 10V | 4V @ 1mA | - | 450pF @ 10V | 4W | 150°C (TJ) | Through Hole | 12-SIP, Exposed Tab | 12-SIP |
||
Advanced Linear Devices Inc. |
MOSFET 4N-CH 10.6V 16DIP
|
pacchetto: 16-DIP (0.300", 7.62mm) |
Azione4.960 |
|
Depletion Mode | 10.6V | 12mA, 3mA | 540 Ohm @ 0V | 3.45V @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | Through Hole | 16-DIP (0.300", 7.62mm) | 16-PDIP |
||
Advanced Linear Devices Inc. |
MOSFET 4N-CH 10.6V 0.08A 16DIP
|
pacchetto: 16-DIP (0.300", 7.62mm) |
Azione3.808 |
|
Logic Level Gate | 10.6V | 80mA | - | 20mV @ 10µA | - | - | 500mW | 0°C ~ 70°C (TJ) | Through Hole | 16-DIP (0.300", 7.62mm) | 16-PDIP |
||
Vishay Siliconix |
MOSFET 2N-CH 30V 6.4A PPAK SO-8
|
pacchetto: PowerPAK? SO-8 Dual |
Azione1.314.228 |
|
Logic Level Gate | 30V | 6.4A | 22 mOhm @ 7.5A, 10V | 3V @ 250µA | 11nC @ 4.5V | - | 1.4W | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK? SO-8 Dual | PowerPAK? SO-8 Dual |
||
Vishay Siliconix |
MOSFET 2N-CH 30V 6.4A PPAK SO-8
|
pacchetto: PowerPAK? SO-8 Dual |
Azione1.201.320 |
|
Logic Level Gate | 30V | 6.4A | 22 mOhm @ 7.5A, 10V | 3V @ 250µA | 11nC @ 4.5V | - | 1.4W | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK? SO-8 Dual | PowerPAK? SO-8 Dual |
||
Toshiba Semiconductor and Storage |
MOSFET N/P-CH 30V 9A/7.4A 8SOP
|
pacchetto: 8-SOIC (0.154", 3.90mm Width) |
Azione7.168 |
|
Logic Level Gate | 30V | 9A, 7.4A | 17 mOhm @ 4.5A, 10V | 2.3V @ 100µA | 17nC @ 10V | 1190pF @ 10V | 450mW | 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOP |
||
Diodes Incorporated |
MOSFET 2NCH 20V 14.5A UDFN2030
|
pacchetto: 6-UFDFN Exposed Pad |
Azione3.536 |
|
Standard | 20V | 14.5A | 5.4 mOhm @ 5.5A, 4.5V | 1.5V @ 250µA | 42.3nC @ 10V | 1418pF @ 10V | 1W | -55°C ~ 150°C (TJ) | Surface Mount | 6-UFDFN Exposed Pad | U-DFN2030-6 (Type B) |
||
ON Semiconductor |
MOSFET 2N-CH 24V 9A ECH8
|
pacchetto: 8-SMD, Flat Lead |
Azione5.792 |
|
- | - | - | - | - | - | - | - | - | Surface Mount | 8-SMD, Flat Lead | 8-ECH |
||
ON Semiconductor |
MOSFET 2N-CH EFCP
|
pacchetto: 4-XFBGA |
Azione161.100 |
|
Logic Level Gate, 2.5V Drive | - | - | - | - | 21.7nC @ 4.5V | - | 1.6W | 150°C (TJ) | Surface Mount | 4-XFBGA | 4-EFCP (1.61x1.61) |
||
Diodes Incorporated |
MOSFET 2N-CH 30V 0.65A SOT363
|
pacchetto: 6-TSSOP, SC-88, SOT-363 |
Azione2.720 |
|
Standard | 30V | 650mA | 400 mOhm @ 250mA, 10V | 1.6V @ 250µA | 1.3nC @ 10V | 50pF @ 15V | 290mW | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSSOP, SC-88, SOT-363 | SOT-363 |
||
Microsemi Corporation |
MOSFET 2N-CH 100V 495A SP6
|
pacchetto: SP6 |
Azione4.144 |
|
Standard | 100V | 495A | 2.5 mOhm @ 200A, 10V | 4V @ 10mA | 1360nC @ 10V | 40000pF @ 25V | 1250W | -40°C ~ 150°C (TJ) | Chassis Mount | SP6 | SP6 |
||
Nexperia USA Inc. |
20 V, DUAL P-CHANNEL TRENCH MOSF
|
pacchetto: 6-XFDFN Exposed Pad |
Azione6.400 |
|
Standard | 20V | 500mA | 1.4 Ohm @ 500mA, 4.5V | 950mV @ 250µA | 2.1nC @ 4.5V | 43pF @ 10V | 380mW | -55°C ~ 150°C (TJ) | Surface Mount | 6-XFDFN Exposed Pad | DFN1010B-6 |
||
Fairchild/ON Semiconductor |
MOSFET 2N-CH 25V 8PWRCLIP
|
pacchetto: 8-PowerWDFN |
Azione4.160 |
|
Logic Level Gate | 25V | 20A, 35A | 3.8 mOhm @ 20A, 10V | 2.5V @ 250µA | 35nC @ 10V | 2375pF @ 13V | 2.1W, 2.3W | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerWDFN | Power Clip 56 |
||
ON Semiconductor |
MOSFET 2P-CH 20V 2.8A UDFN
|
pacchetto: 6-UDFN Exposed Pad |
Azione54.024 |
|
Logic Level Gate | 20V | 2.8A | 50 mOhm @ 4A, 4.5V | 1V @ 250µA | 10.4nC @ 4.5V | 920pF @ 15V | 500mW | -55°C ~ 150°C (TJ) | Surface Mount | 6-UDFN Exposed Pad | 6-UDFN (2x2) |
||
Diodes Incorporated |
MOSFET 2N-CH 50V 0.28A SOT-563
|
pacchetto: SOT-563, SOT-666 |
Azione36.000 |
|
Logic Level Gate | 50V | 280mA | 2 Ohm @ 50mA, 5V | 1V @ 250µA | - | 50pF @ 25V | 250mW | -55°C ~ 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | SOT-563 |
||
Infineon Technologies |
MOSFET 2P-CH 12V 9.2A 8-SOIC
|
pacchetto: 8-SOIC (0.154", 3.90mm Width) |
Azione29.730 |
|
Logic Level Gate | 12V | 9.2A | 17 mOhm @ 9.2A, 4.5V | 900mV @ 250µA | 57nC @ 4.5V | 3450pF @ 10V | 2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
||
Diodes Incorporated |
MOSFET N/P-CH 20V SOT563
|
pacchetto: SOT-563, SOT-666 |
Azione49.912.500 |
|
Logic Level Gate | 20V | 870mA, 640mA | 400 mOhm @ 600mA, 4.5V | 1V @ 250µA | 0.74nC @ 4.5V | 60.67pF @ 16V | 530mW | -55°C ~ 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | SOT-563 |
||
Diodes Incorporated |
MOSFET 2N-CH 30V 0.22A SOT363
|
pacchetto: 6-TSSOP, SC-88, SOT-363 |
Azione88.800 |
|
Logic Level Gate | 30V | 220mA | 2.8 Ohm @ 250mA, 10V | 1.5V @ 250µA | 870nC @ 10V | 22pF @ 25V | 300mW | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSSOP, SC-88, SOT-363 | SOT-363 |
||
Fairchild/ON Semiconductor |
MOSFET 2P-CH 30V 1.8A SSOT6
|
pacchetto: SOT-23-6 Thin, TSOT-23-6 |
Azione3.992.724 |
|
Logic Level Gate | 30V | 1.8A | 170 mOhm @ 1.8A, 10V | 3V @ 250µA | 3.5nC @ 10V | 190pF @ 15V | 700mW | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | SuperSOT?-6 |