Pagina 87 - Transistor - FET, MOSFET - Array | Dispositivi a semiconduttore discreti

Numero di parte	Produttore	Descrizione	pacchetto	Azione	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
IRF7754GTRPBF	Infineon Technologies	MOSFET 2P-CH 12V 5.5A 8TSSOP FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 5.5A Rds On (Max) @ Id, Vgs: 25 mOhm @ 5.4A, 4.5V Vgs(th) (Max) @ Id: 900mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1984pF @ 6V Power - Max: 1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	pacchetto: 8-TSSOP (0.173", 4.40mm Width)	Azione3.232	Logic Level Gate	12V	5.5A	25 mOhm @ 5.4A, 4.5V	900mV @ 250µA	22nC @ 4.5V	1984pF @ 6V	1W	-55°C ~ 150°C (TJ)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
IRF9956	Infineon Technologies	MOSFET 2N-CH 30V 3.5A 8-SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3.5A Rds On (Max) @ Id, Vgs: 100 mOhm @ 2.2A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 15V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	pacchetto: 8-SOIC (0.154", 3.90mm Width)	Azione189.156	Logic Level Gate	30V	3.5A	100 mOhm @ 2.2A, 10V	1V @ 250µA	14nC @ 10V	190pF @ 15V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
AO4818L	Alpha & Omega Semiconductor Inc.	MOSFET 2N-CH 30V 8A FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8A Rds On (Max) @ Id, Vgs: 19 mOhm @ 8A, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 888pF @ 15V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	pacchetto: 8-SOIC (0.154", 3.90mm Width)	Azione4.832	Standard	30V	8A	19 mOhm @ 8A, 10V	2.4V @ 250µA	18nC @ 10V	888pF @ 15V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
CAS100H12AM1	Cree/Wolfspeed	MOSFET 2N-CH 1200V 168A MODULE FET Type: 2 N-Channel (Half Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 168A Rds On (Max) @ Id, Vgs: 20 mOhm @ 20A, 20V Vgs(th) (Max) @ Id: 3.1V @ 50mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 9500pF @ 800V Power - Max: 568W Operating Temperature: - Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	pacchetto: Module	Azione7.872	Standard	1200V (1.2kV)	168A	20 mOhm @ 20A, 20V	3.1V @ 50mA	-	9500pF @ 800V	568W	-	Chassis Mount	Module	Module
AON3806	Alpha & Omega Semiconductor Inc.	MOSFET 2N-CH 20V 6A 8-DFN FET Type: 2 N-Channel (Dual) Common Drain FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 6A Rds On (Max) @ Id, Vgs: 26 mOhm @ 6.8A, 4.5V Vgs(th) (Max) @ Id: 1.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 10V Power - Max: 2.5W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: 8-DFN (2.9x2.3)	pacchetto: 8-SMD, Flat Lead	Azione50.400	Logic Level Gate	20V	6A	26 mOhm @ 6.8A, 4.5V	1.1V @ 250µA	9nC @ 4.5V	500pF @ 10V	2.5W	-55°C ~ 150°C (TJ)	Surface Mount	8-SMD, Flat Lead	8-DFN (2.9x2.3)
AO6804	Alpha & Omega Semiconductor Inc.	MOSFET 2N-CH 20V 4A 6TSOP FET Type: 2 N-Channel (Dual) Common Drain FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4A Rds On (Max) @ Id, Vgs: 32 mOhm @ 5A, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7.7nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 725pF @ 10V Power - Max: 800mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-74, SOT-457 Supplier Device Package: 6-TSOP	pacchetto: SC-74, SOT-457	Azione267.288	Logic Level Gate	20V	4A	32 mOhm @ 5A, 4.5V	1.2V @ 250µA	7.7nC @ 4.5V	725pF @ 10V	800mW	-55°C ~ 150°C (TJ)	Surface Mount	SC-74, SOT-457	6-TSOP
SI9933BDY-T1-E3	Vishay Siliconix	MOSFET 2P-CH 20V 3.6A 8-SOIC FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.6A Rds On (Max) @ Id, Vgs: 60 mOhm @ 4.7A, 4.5V Vgs(th) (Max) @ Id: 1.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	pacchetto: 8-SOIC (0.154", 3.90mm Width)	Azione747.996	Logic Level Gate	20V	3.6A	60 mOhm @ 4.7A, 4.5V	1.4V @ 250µA	9nC @ 4.5V	-	1.1W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
SI6924AEDQ-T1-E3	Vishay Siliconix	MOSFET 2N-CH 28V 4.1A 8-TSSOP FET Type: 2 N-Channel (Dual) Common Drain FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 28V Current - Continuous Drain (Id) @ 25°C: 4.1A Rds On (Max) @ Id, Vgs: 33 mOhm @ 4.6A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	pacchetto: 8-TSSOP (0.173", 4.40mm Width)	Azione6.672	Logic Level Gate	28V	4.1A	33 mOhm @ 4.6A, 4.5V	1.5V @ 250µA	10nC @ 4.5V	-	1W	-55°C ~ 150°C (TJ)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
SI5944DU-T1-E3	Vishay Siliconix	MOSFET 2N-CH 40V 6A 8PWRPAK FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 6A Rds On (Max) @ Id, Vgs: 112 mOhm @ 3.3A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 210pF @ 20V Power - Max: 10W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK? ChipFET? Dual Supplier Device Package: PowerPAK? ChipFet Dual	pacchetto: PowerPAK? ChipFET? Dual	Azione16.812	Logic Level Gate	40V	6A	112 mOhm @ 3.3A, 10V	3V @ 250µA	6.6nC @ 10V	210pF @ 20V	10W	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? ChipFET? Dual	PowerPAK? ChipFet Dual
ZXMN10A08DN8TC	Diodes Incorporated	MOSFET 2N-CH 100V 1.6A 8SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 1.6A Rds On (Max) @ Id, Vgs: 250 mOhm @ 3.2A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs: 7.7nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 405pF @ 50V Power - Max: 1.25W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	pacchetto: 8-SOIC (0.154", 3.90mm Width)	Azione467.544	Logic Level Gate	100V	1.6A	250 mOhm @ 3.2A, 10V	2V @ 250µA (Min)	7.7nC @ 10V	405pF @ 50V	1.25W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
IRF7341GTRPBF	Infineon Technologies	MOSFET N-CH 55V 5.1A FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 5.1A Rds On (Max) @ Id, Vgs: 50 mOhm @ 5.1A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 780pF @ 25V Power - Max: 2.4W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	pacchetto: 8-SOIC (0.154", 3.90mm Width)	Azione2.720	Standard	55V	5.1A	50 mOhm @ 5.1A, 10V	1V @ 250µA (Min)	44nC @ 10V	780pF @ 25V	2.4W	-55°C ~ 175°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
GMM3X100-01X1-SMDSAM	IXYS	MOSFET 6N-CH 100V 90A 24-SMD FET Type: 6 N-Channel (3-Phase Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 90A Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: 4.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 24-SMD, Gull Wing Supplier Device Package: 24-SMD	pacchetto: 24-SMD, Gull Wing	Azione6.960	Standard	100V	90A	-	4.5V @ 1mA	90nC @ 10V	-	-	-55°C ~ 175°C (TJ)	Surface Mount	24-SMD, Gull Wing	24-SMD
ALD114804SCL	Advanced Linear Devices Inc.	MOSFET 4N-CH 10.6V 16SOIC FET Type: 4 N-Channel, Matched Pair FET Feature: Depletion Mode Drain to Source Voltage (Vdss): 10.6V Current - Continuous Drain (Id) @ 25°C: 12mA, 3mA Rds On (Max) @ Id, Vgs: 500 Ohm @ 3.6V Vgs(th) (Max) @ Id: 360mV @ 1µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V Power - Max: 500mW Operating Temperature: 0°C ~ 70°C (TJ) Mounting Type: Surface Mount Package / Case: 16-SOIC (0.154", 3.90mm Width) Supplier Device Package: 16-SOIC	pacchetto: 16-SOIC (0.154", 3.90mm Width)	Azione7.152	Depletion Mode	10.6V	12mA, 3mA	500 Ohm @ 3.6V	360mV @ 1µA	-	2.5pF @ 5V	500mW	0°C ~ 70°C (TJ)	Surface Mount	16-SOIC (0.154", 3.90mm Width)	16-SOIC
SI7218DN-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 30V 24A 1212-8 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 24A Rds On (Max) @ Id, Vgs: 25 mOhm @ 8A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 15V Power - Max: 23W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK? 1212-8 Dual Supplier Device Package: PowerPAK? 1212-8 Dual	pacchetto: PowerPAK? 1212-8 Dual	Azione8.700	Standard	30V	24A	25 mOhm @ 8A, 10V	3V @ 250µA	17nC @ 10V	700pF @ 15V	23W	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? 1212-8 Dual	PowerPAK? 1212-8 Dual
NTLGD3502NT2G	ON Semiconductor	MOSFET 2N-CH 20V 4.3A/3.6A 6DFN FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.3A, 3.6A Rds On (Max) @ Id, Vgs: 60 mOhm @ 4.3A, 4.5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 10V Power - Max: 1.74W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-VDFN Exposed Pad Supplier Device Package: 6-DFN (3x3)	pacchetto: 6-VDFN Exposed Pad	Azione4.384	Logic Level Gate	20V	4.3A, 3.6A	60 mOhm @ 4.3A, 4.5V	2V @ 250µA	4nC @ 4.5V	480pF @ 10V	1.74W	-55°C ~ 150°C (TJ)	Surface Mount	6-VDFN Exposed Pad	6-DFN (3x3)
DMS3019SSD-13	Diodes Incorporated	MOSFET 2N-CH 30V 7A/5.7A 8SO FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7A, 5.7A Rds On (Max) @ Id, Vgs: 15 mOhm @ 9A, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1932pF @ 15V Power - Max: 1.19W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	pacchetto: 8-SOIC (0.154", 3.90mm Width)	Azione4.768	Logic Level Gate	30V	7A, 5.7A	15 mOhm @ 9A, 10V	2.4V @ 250µA	42nC @ 10V	1932pF @ 15V	1.19W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
APTMC120AM25CT3AG	Microsemi Corporation	MOSFET 2N-CH 1200V 105A SP3F FET Type: 2 N-Channel (Half Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 105A Rds On (Max) @ Id, Vgs: 25 mOhm @ 80A, 20V Vgs(th) (Max) @ Id: 2.2V @ 4mA (Typ) Gate Charge (Qg) (Max) @ Vgs: 197nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 3800pF @ 1000V Power - Max: 500W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP3 Supplier Device Package: SP3	pacchetto: SP3	Azione3.424	Standard	1200V (1.2kV)	105A	25 mOhm @ 80A, 20V	2.2V @ 4mA (Typ)	197nC @ 20V	3800pF @ 1000V	500W	-40°C ~ 150°C (TJ)	Chassis Mount	SP3	SP3
CSD86360Q5D	Texas Instruments	MOSFET 2N-CH 25V 50A 8SON FET Type: 2 N-Channel (Half Bridge) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 50A Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: 2.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12.6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2060pF @ 12.5 Power - Max: 13W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerLDFN Supplier Device Package: 8-LSON (5x6)	pacchetto: 8-PowerLDFN	Azione7.712	Logic Level Gate	25V	50A	-	2.1V @ 250µA	12.6nC @ 4.5V	2060pF @ 12.5	13W	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerLDFN	8-LSON (5x6)
SIB912DK-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 20V 1.5A SC-75-6 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.5A Rds On (Max) @ Id, Vgs: 216 mOhm @ 1.8A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 3nC @ 8V Input Capacitance (Ciss) (Max) @ Vds: 95pF @ 10V Power - Max: 3.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK? SC-75-6L Dual Supplier Device Package: PowerPAK? SC-75-6L Dual	pacchetto: PowerPAK? SC-75-6L Dual	Azione7.440	Logic Level Gate	20V	1.5A	216 mOhm @ 1.8A, 4.5V	1V @ 250µA	3nC @ 8V	95pF @ 10V	3.1W	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SC-75-6L Dual	PowerPAK? SC-75-6L Dual
SLA5060	Sanken	MOSFET 3N/3P-CH 60V 6A 12-SIP FET Type: 3 N and 3 P-Channel (3-Phase Bridge) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 6A Rds On (Max) @ Id, Vgs: 220 mOhm @ 3A, 4V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 10V Power - Max: 5W Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: 12-SIP Supplier Device Package: 12-SIP	pacchetto: 12-SIP	Azione44.916	Logic Level Gate	60V	6A	220 mOhm @ 3A, 4V	-	-	320pF @ 10V	5W	150°C (TJ)	Through Hole	12-SIP	12-SIP
BSC750N10ND G	Infineon Technologies	MOSFET 2N-CH 100V 3.2A 8TDSON FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 3.2A Rds On (Max) @ Id, Vgs: 75 mOhm @ 13A, 10V Vgs(th) (Max) @ Id: 4V @ 12µA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 720pF @ 50V Power - Max: 26W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: PG-TDSON-8	pacchetto: 8-PowerVDFN	Azione2.128	Standard	100V	3.2A	75 mOhm @ 13A, 10V	4V @ 12µA	11nC @ 10V	720pF @ 50V	26W	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerVDFN	PG-TDSON-8
SI4286DY-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 40V 7A 8SO FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 7A Rds On (Max) @ Id, Vgs: 32.5 mOhm @ 8A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 375pF @ 20V Power - Max: 2.9W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	pacchetto: 8-SOIC (0.154", 3.90mm Width)	Azione91.548	Standard	40V	7A	32.5 mOhm @ 8A, 10V	2.5V @ 250µA	10.5nC @ 10V	375pF @ 20V	2.9W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
SSM6P35FE(TE85L,F)	Toshiba Semiconductor and Storage	MOSFET 2P-CH 20V 0.1A ES6 FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 100mA Rds On (Max) @ Id, Vgs: 8 Ohm @ 50mA, 4V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 12.2pF @ 3V Power - Max: 150mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: ES6 (1.6x1.6)	pacchetto: SOT-563, SOT-666	Azione32.976	Logic Level Gate	20V	100mA	8 Ohm @ 50mA, 4V	1V @ 1mA	-	12.2pF @ 3V	150mW	150°C (TJ)	Surface Mount	SOT-563, SOT-666	ES6 (1.6x1.6)
SIZ730DT-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 30V 16A 6-POWERPAIR FET Type: 2 N-Channel (Half Bridge) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 16A, 35A Rds On (Max) @ Id, Vgs: 9.3 mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 830pF @ 15V Power - Max: 27W, 48W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-PowerPair? Supplier Device Package: 6-PowerPair?	pacchetto: 6-PowerPair?	Azione90.252	Logic Level Gate	30V	16A, 35A	9.3 mOhm @ 15A, 10V	2.2V @ 250µA	24nC @ 10V	830pF @ 15V	27W, 48W	-55°C ~ 150°C (TJ)	Surface Mount	6-PowerPair?	6-PowerPair?
SQJB90EP-T1_GE3	Vishay Siliconix	MOSFET ARRAY 2N-CH 80V SO8 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 21.5 mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 25V Power - Max: 48W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK? SO-8 Dual Supplier Device Package: PowerPAK? SO-8 Dual	pacchetto: PowerPAK? SO-8 Dual	Azione26.052	Standard	80V	30A (Tc)	21.5 mOhm @ 10A, 10V	3.5V @ 250µA	25nC @ 10V	1200pF @ 25V	48W	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK? SO-8 Dual	PowerPAK? SO-8 Dual
AOC2804	Alpha & Omega Semiconductor Inc.	MOSFET 2N-CH FET Type: 2 N-Channel (Dual) Common Drain FET Feature: Standard Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 700mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-XFDFN Supplier Device Package: 4-AlphaDFN (1.57x1.57)	pacchetto: 4-XFDFN	Azione26.538	Standard	-	-	-	-	9.5nC @ 4.5V	-	700mW	-55°C ~ 150°C (TJ)	Surface Mount	4-XFDFN	4-AlphaDFN (1.57x1.57)
DMC31D5UDJ-7B	Diodes Incorporated	MOSFET N/P-CH 30V SOT963 FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 220mA, 200mA Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 100mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.38nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 22.6pF @ 15V Power - Max: 350mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-963 Supplier Device Package: SOT-963	pacchetto: SOT-963	Azione78.582	Logic Level Gate	30V	220mA, 200mA	1.5 Ohm @ 100mA, 4.5V	1V @ 250µA	0.38nC @ 4.5V	22.6pF @ 15V	350mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-963	SOT-963
SI3552DV-T1-E3	Vishay Siliconix	MOSFET N/P-CH 30V 6TSOP FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: 105 mOhm @ 2.5A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.15W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: 6-TSOP	pacchetto: SOT-23-6 Thin, TSOT-23-6	Azione174.708	Logic Level Gate	30V	-	105 mOhm @ 2.5A, 10V	1V @ 250µA (Min)	3.2nC @ 5V	-	1.15W	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	6-TSOP
TC8020K6-G	Microchip Technology	MOSFET 6N/6P-CH 200V 56VQFN FET Type: 6 N and 6 P-Channel FET Feature: Standard Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: 8 Ohm @ 1A, 10V Vgs(th) (Max) @ Id: 2.4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Power - Max: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 56-VFQFN Exposed Pad Supplier Device Package: 56-QFN (8x8)	pacchetto: 56-VFQFN Exposed Pad	Azione22.200	Standard	200V	-	8 Ohm @ 1A, 10V	2.4V @ 1mA	-	50pF @ 25V	-	-55°C ~ 150°C (TJ)	Surface Mount	56-VFQFN Exposed Pad	56-QFN (8x8)
FDG6306P	Fairchild/ON Semiconductor	MOSFET 2P-CH 20V 0.6A SC70-6 FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 600mA Rds On (Max) @ Id, Vgs: 420 mOhm @ 600mA, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 2nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 114pF @ 10V Power - Max: 300mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SC-70-6	pacchetto: 6-TSSOP, SC-88, SOT-363	Azione543.504	Logic Level Gate	20V	600mA	420 mOhm @ 600mA, 4.5V	1.5V @ 250µA	2nC @ 4.5V	114pF @ 10V	300mW	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SC-70-6

IRF7754GTRPBF

Infineon Technologies

MOSFET 2P-CH 12V 5.5A 8TSSOP

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 5.5A
Rds On (Max) @ Id, Vgs: 25 mOhm @ 5.4A, 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1984pF @ 6V
Power - Max: 1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP

pacchetto: 8-TSSOP (0.173", 4.40mm Width)

Azione3.232

Logic Level Gate

12V

5.5A

25 mOhm @ 5.4A, 4.5V

900mV @ 250µA

22nC @ 4.5V

1984pF @ 6V

1W

-55°C ~ 150°C (TJ)

Surface Mount

8-TSSOP (0.173", 4.40mm Width)

8-TSSOP

IRF9956

Infineon Technologies

MOSFET 2N-CH 30V 3.5A 8-SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.5A
Rds On (Max) @ Id, Vgs: 100 mOhm @ 2.2A, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 15V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

pacchetto: 8-SOIC (0.154", 3.90mm Width)

Azione189.156

Logic Level Gate

30V

3.5A

100 mOhm @ 2.2A, 10V

1V @ 250µA

14nC @ 10V

190pF @ 15V

2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

AO4818L

Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 30V 8A

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8A
Rds On (Max) @ Id, Vgs: 19 mOhm @ 8A, 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 888pF @ 15V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

pacchetto: 8-SOIC (0.154", 3.90mm Width)

Azione4.832

Standard

30V

8A

19 mOhm @ 8A, 10V

2.4V @ 250µA

18nC @ 10V

888pF @ 15V

2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

CAS100H12AM1

Cree/Wolfspeed

MOSFET 2N-CH 1200V 168A MODULE

FET Type: 2 N-Channel (Half Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 168A
Rds On (Max) @ Id, Vgs: 20 mOhm @ 20A, 20V
Vgs(th) (Max) @ Id: 3.1V @ 50mA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 9500pF @ 800V
Power - Max: 568W
Operating Temperature: -
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module

pacchetto: Module

Azione7.872

Standard

1200V (1.2kV)

168A

20 mOhm @ 20A, 20V

3.1V @ 50mA

-

9500pF @ 800V

568W

-

Chassis Mount

Module

AON3806

Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 20V 6A 8-DFN

FET Type: 2 N-Channel (Dual) Common Drain
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6A
Rds On (Max) @ Id, Vgs: 26 mOhm @ 6.8A, 4.5V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 10V
Power - Max: 2.5W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: 8-DFN (2.9x2.3)

pacchetto: 8-SMD, Flat Lead

Azione50.400

Logic Level Gate

20V

6A

26 mOhm @ 6.8A, 4.5V

1.1V @ 250µA

9nC @ 4.5V

500pF @ 10V

2.5W

-55°C ~ 150°C (TJ)

Surface Mount

8-SMD, Flat Lead

8-DFN (2.9x2.3)

AO6804

Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 20V 4A 6TSOP

FET Type: 2 N-Channel (Dual) Common Drain
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4A
Rds On (Max) @ Id, Vgs: 32 mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 7.7nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 725pF @ 10V
Power - Max: 800mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Supplier Device Package: 6-TSOP

pacchetto: SC-74, SOT-457

Azione267.288

Logic Level Gate

20V

4A

32 mOhm @ 5A, 4.5V

1.2V @ 250µA

7.7nC @ 4.5V

725pF @ 10V

800mW

-55°C ~ 150°C (TJ)

Surface Mount

SC-74, SOT-457

6-TSOP

SI9933BDY-T1-E3

Vishay Siliconix

MOSFET 2P-CH 20V 3.6A 8-SOIC

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.6A
Rds On (Max) @ Id, Vgs: 60 mOhm @ 4.7A, 4.5V
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

pacchetto: 8-SOIC (0.154", 3.90mm Width)

Azione747.996

Logic Level Gate

20V

3.6A

60 mOhm @ 4.7A, 4.5V

1.4V @ 250µA

9nC @ 4.5V

-

1.1W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

SI6924AEDQ-T1-E3

Vishay Siliconix

MOSFET 2N-CH 28V 4.1A 8-TSSOP

FET Type: 2 N-Channel (Dual) Common Drain
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 28V
Current - Continuous Drain (Id) @ 25°C: 4.1A
Rds On (Max) @ Id, Vgs: 33 mOhm @ 4.6A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP

pacchetto: 8-TSSOP (0.173", 4.40mm Width)

Azione6.672

Logic Level Gate

28V

4.1A

33 mOhm @ 4.6A, 4.5V

1.5V @ 250µA

10nC @ 4.5V

-

1W

-55°C ~ 150°C (TJ)

Surface Mount

8-TSSOP (0.173", 4.40mm Width)

8-TSSOP

SI5944DU-T1-E3

Vishay Siliconix

MOSFET 2N-CH 40V 6A 8PWRPAK

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 6A
Rds On (Max) @ Id, Vgs: 112 mOhm @ 3.3A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 210pF @ 20V
Power - Max: 10W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK? ChipFET? Dual
Supplier Device Package: PowerPAK? ChipFet Dual

pacchetto: PowerPAK? ChipFET? Dual

Azione16.812

Logic Level Gate

40V

6A

112 mOhm @ 3.3A, 10V

3V @ 250µA

6.6nC @ 10V

210pF @ 20V

10W

-55°C ~ 150°C (TJ)

Surface Mount

PowerPAK? ChipFET? Dual

PowerPAK? ChipFet Dual

ZXMN10A08DN8TC

Diodes Incorporated

MOSFET 2N-CH 100V 1.6A 8SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 1.6A
Rds On (Max) @ Id, Vgs: 250 mOhm @ 3.2A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs: 7.7nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 405pF @ 50V
Power - Max: 1.25W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

pacchetto: 8-SOIC (0.154", 3.90mm Width)

Azione467.544

Logic Level Gate

100V

1.6A

250 mOhm @ 3.2A, 10V

2V @ 250µA (Min)

7.7nC @ 10V

405pF @ 50V

1.25W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

IRF7341GTRPBF

Infineon Technologies

MOSFET N-CH 55V 5.1A

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 5.1A
Rds On (Max) @ Id, Vgs: 50 mOhm @ 5.1A, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 780pF @ 25V
Power - Max: 2.4W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

pacchetto: 8-SOIC (0.154", 3.90mm Width)

Azione2.720

Standard

55V

5.1A

50 mOhm @ 5.1A, 10V

1V @ 250µA (Min)

44nC @ 10V

780pF @ 25V

2.4W

-55°C ~ 175°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

GMM3X100-01X1-SMDSAM

IXYS

MOSFET 6N-CH 100V 90A 24-SMD

FET Type: 6 N-Channel (3-Phase Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 90A
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 24-SMD, Gull Wing
Supplier Device Package: 24-SMD

pacchetto: 24-SMD, Gull Wing

Azione6.960

Standard

100V

90A

-

4.5V @ 1mA

90nC @ 10V

-

-55°C ~ 175°C (TJ)

Surface Mount

24-SMD, Gull Wing

24-SMD

ALD114804SCL

Advanced Linear Devices Inc.

MOSFET 4N-CH 10.6V 16SOIC

FET Type: 4 N-Channel, Matched Pair
FET Feature: Depletion Mode
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: 12mA, 3mA
Rds On (Max) @ Id, Vgs: 500 Ohm @ 3.6V
Vgs(th) (Max) @ Id: 360mV @ 1µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
Power - Max: 500mW
Operating Temperature: 0°C ~ 70°C (TJ)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 16-SOIC

pacchetto: 16-SOIC (0.154", 3.90mm Width)

Azione7.152

Depletion Mode

10.6V

12mA, 3mA

500 Ohm @ 3.6V

360mV @ 1µA

-

2.5pF @ 5V

500mW

0°C ~ 70°C (TJ)

Surface Mount

16-SOIC (0.154", 3.90mm Width)

16-SOIC

SI7218DN-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 30V 24A 1212-8

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 24A
Rds On (Max) @ Id, Vgs: 25 mOhm @ 8A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 15V
Power - Max: 23W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK? 1212-8 Dual
Supplier Device Package: PowerPAK? 1212-8 Dual

pacchetto: PowerPAK? 1212-8 Dual

Azione8.700

Standard

30V

24A

25 mOhm @ 8A, 10V

3V @ 250µA

17nC @ 10V

700pF @ 15V

23W

-55°C ~ 150°C (TJ)

Surface Mount

PowerPAK? 1212-8 Dual

NTLGD3502NT2G

ON Semiconductor

MOSFET 2N-CH 20V 4.3A/3.6A 6DFN

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.3A, 3.6A
Rds On (Max) @ Id, Vgs: 60 mOhm @ 4.3A, 4.5V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 10V
Power - Max: 1.74W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-VDFN Exposed Pad
Supplier Device Package: 6-DFN (3x3)

pacchetto: 6-VDFN Exposed Pad

Azione4.384

Logic Level Gate

20V

4.3A, 3.6A

60 mOhm @ 4.3A, 4.5V

2V @ 250µA

4nC @ 4.5V

480pF @ 10V

1.74W

-55°C ~ 150°C (TJ)

Surface Mount

6-VDFN Exposed Pad

6-DFN (3x3)

DMS3019SSD-13

Diodes Incorporated

MOSFET 2N-CH 30V 7A/5.7A 8SO

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7A, 5.7A
Rds On (Max) @ Id, Vgs: 15 mOhm @ 9A, 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1932pF @ 15V
Power - Max: 1.19W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

pacchetto: 8-SOIC (0.154", 3.90mm Width)

Azione4.768

Logic Level Gate

30V

7A, 5.7A

15 mOhm @ 9A, 10V

2.4V @ 250µA

42nC @ 10V

1932pF @ 15V

1.19W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

APTMC120AM25CT3AG

Microsemi Corporation

MOSFET 2N-CH 1200V 105A SP3F

FET Type: 2 N-Channel (Half Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 105A
Rds On (Max) @ Id, Vgs: 25 mOhm @ 80A, 20V
Vgs(th) (Max) @ Id: 2.2V @ 4mA (Typ)
Gate Charge (Qg) (Max) @ Vgs: 197nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 3800pF @ 1000V
Power - Max: 500W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP3
Supplier Device Package: SP3

pacchetto: SP3

Azione3.424

Standard

1200V (1.2kV)

105A

25 mOhm @ 80A, 20V

2.2V @ 4mA (Typ)

197nC @ 20V

3800pF @ 1000V

500W

-40°C ~ 150°C (TJ)

Chassis Mount

SP3

CSD86360Q5D

Texas Instruments

MOSFET 2N-CH 25V 50A 8SON

FET Type: 2 N-Channel (Half Bridge)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 50A
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 12.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 2060pF @ 12.5
Power - Max: 13W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerLDFN
Supplier Device Package: 8-LSON (5x6)

pacchetto: 8-PowerLDFN

Azione7.712

Logic Level Gate

25V

50A

-

2.1V @ 250µA

12.6nC @ 4.5V

2060pF @ 12.5

13W

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerLDFN

8-LSON (5x6)

SIB912DK-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 20V 1.5A SC-75-6

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.5A
Rds On (Max) @ Id, Vgs: 216 mOhm @ 1.8A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 3nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds: 95pF @ 10V
Power - Max: 3.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK? SC-75-6L Dual
Supplier Device Package: PowerPAK? SC-75-6L Dual

pacchetto: PowerPAK? SC-75-6L Dual

Azione7.440

Logic Level Gate

20V

1.5A

216 mOhm @ 1.8A, 4.5V

1V @ 250µA

3nC @ 8V

95pF @ 10V

3.1W

-55°C ~ 150°C (TJ)

Surface Mount

PowerPAK? SC-75-6L Dual

SLA5060

Sanken

MOSFET 3N/3P-CH 60V 6A 12-SIP

FET Type: 3 N and 3 P-Channel (3-Phase Bridge)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 6A
Rds On (Max) @ Id, Vgs: 220 mOhm @ 3A, 4V
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 10V
Power - Max: 5W
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 12-SIP
Supplier Device Package: 12-SIP

pacchetto: 12-SIP

Azione44.916

Logic Level Gate

60V

6A

220 mOhm @ 3A, 4V

-

320pF @ 10V

5W

150°C (TJ)

Through Hole

12-SIP

BSC750N10ND G

Infineon Technologies

MOSFET 2N-CH 100V 3.2A 8TDSON

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 3.2A
Rds On (Max) @ Id, Vgs: 75 mOhm @ 13A, 10V
Vgs(th) (Max) @ Id: 4V @ 12µA
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 720pF @ 50V
Power - Max: 26W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Supplier Device Package: PG-TDSON-8

pacchetto: 8-PowerVDFN

Azione2.128

Standard

100V

3.2A

75 mOhm @ 13A, 10V

4V @ 12µA

11nC @ 10V

720pF @ 50V

26W

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerVDFN

PG-TDSON-8

SI4286DY-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 40V 7A 8SO

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 7A
Rds On (Max) @ Id, Vgs: 32.5 mOhm @ 8A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 375pF @ 20V
Power - Max: 2.9W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

pacchetto: 8-SOIC (0.154", 3.90mm Width)

Azione91.548

Standard

40V

7A

32.5 mOhm @ 8A, 10V

2.5V @ 250µA

10.5nC @ 10V

375pF @ 20V

2.9W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

SSM6P35FE(TE85L,F)

Toshiba Semiconductor and Storage

MOSFET 2P-CH 20V 0.1A ES6

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 100mA
Rds On (Max) @ Id, Vgs: 8 Ohm @ 50mA, 4V
Vgs(th) (Max) @ Id: 1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 12.2pF @ 3V
Power - Max: 150mW
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: ES6 (1.6x1.6)

pacchetto: SOT-563, SOT-666

Azione32.976

Logic Level Gate

20V

100mA

8 Ohm @ 50mA, 4V

1V @ 1mA

-

12.2pF @ 3V

150mW

150°C (TJ)

Surface Mount

SOT-563, SOT-666

ES6 (1.6x1.6)

SIZ730DT-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 30V 16A 6-POWERPAIR

FET Type: 2 N-Channel (Half Bridge)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 16A, 35A
Rds On (Max) @ Id, Vgs: 9.3 mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 830pF @ 15V
Power - Max: 27W, 48W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-PowerPair?
Supplier Device Package: 6-PowerPair?

pacchetto: 6-PowerPair?

Azione90.252

Logic Level Gate

30V

16A, 35A

9.3 mOhm @ 15A, 10V

2.2V @ 250µA

24nC @ 10V

830pF @ 15V

27W, 48W

-55°C ~ 150°C (TJ)

Surface Mount

6-PowerPair?

SQJB90EP-T1_GE3

Vishay Siliconix

MOSFET ARRAY 2N-CH 80V SO8

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 21.5 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 25V
Power - Max: 48W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK? SO-8 Dual
Supplier Device Package: PowerPAK? SO-8 Dual

pacchetto: PowerPAK? SO-8 Dual

Azione26.052

Standard

80V

30A (Tc)

21.5 mOhm @ 10A, 10V

3.5V @ 250µA

25nC @ 10V

1200pF @ 25V

48W

-55°C ~ 175°C (TJ)

Surface Mount

PowerPAK? SO-8 Dual

AOC2804

Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH

FET Type: 2 N-Channel (Dual) Common Drain
FET Feature: Standard
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 700mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-XFDFN
Supplier Device Package: 4-AlphaDFN (1.57x1.57)

pacchetto: 4-XFDFN

Azione26.538

Standard

-

9.5nC @ 4.5V

-

700mW

-55°C ~ 150°C (TJ)

Surface Mount

4-XFDFN

4-AlphaDFN (1.57x1.57)

DMC31D5UDJ-7B

Diodes Incorporated

MOSFET N/P-CH 30V SOT963

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 220mA, 200mA
Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 100mA, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.38nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 22.6pF @ 15V
Power - Max: 350mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-963
Supplier Device Package: SOT-963

pacchetto: SOT-963

Azione78.582

Logic Level Gate

30V

220mA, 200mA

1.5 Ohm @ 100mA, 4.5V

1V @ 250µA

0.38nC @ 4.5V

22.6pF @ 15V

350mW

-55°C ~ 150°C (TJ)

Surface Mount

SOT-963

SI3552DV-T1-E3

Vishay Siliconix

MOSFET N/P-CH 30V 6TSOP

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: 105 mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.15W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: 6-TSOP

pacchetto: SOT-23-6 Thin, TSOT-23-6

Azione174.708

Logic Level Gate

30V

-

105 mOhm @ 2.5A, 10V

1V @ 250µA (Min)

3.2nC @ 5V

-

1.15W

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-6 Thin, TSOT-23-6

6-TSOP

TC8020K6-G

Microchip Technology

MOSFET 6N/6P-CH 200V 56VQFN

FET Type: 6 N and 6 P-Channel
FET Feature: Standard
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: 8 Ohm @ 1A, 10V
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
Power - Max: -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 56-VFQFN Exposed Pad
Supplier Device Package: 56-QFN (8x8)

pacchetto: 56-VFQFN Exposed Pad

Azione22.200

Standard

200V

-

8 Ohm @ 1A, 10V

2.4V @ 1mA

-

50pF @ 25V

-

-55°C ~ 150°C (TJ)

Surface Mount

56-VFQFN Exposed Pad

56-QFN (8x8)

FDG6306P

Fairchild/ON Semiconductor

MOSFET 2P-CH 20V 0.6A SC70-6

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 600mA
Rds On (Max) @ Id, Vgs: 420 mOhm @ 600mA, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 114pF @ 10V
Power - Max: 300mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-70-6

pacchetto: 6-TSSOP, SC-88, SOT-363

Azione543.504

Logic Level Gate

20V

600mA

420 mOhm @ 600mA, 4.5V

1.5V @ 250µA

2nC @ 4.5V

114pF @ 10V

300mW

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SC-70-6