Immagine |
Numero di parte |
Produttore |
Descrizione |
pacchetto |
Azione |
Quantità |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
MOSFET N-CH 600V 20.7A TO220-3
|
pacchetto: TO-220-3 |
Azione2.464 |
|
MOSFET (Metal Oxide) | 600V | 20.7A (Tc) | 10V | 3.9V @ 1mA | 114nC @ 10V | 2400pF @ 25V | ±20V | - | 208W (Tc) | 190 mOhm @ 13.1A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
||
Infineon Technologies |
MOSFET N-CH 600V 0.021A SOT-23
|
pacchetto: TO-236-3, SC-59, SOT-23-3 |
Azione2.080 |
|
MOSFET (Metal Oxide) | 600V | 21mA (Ta) | 0V, 10V | 1.6V @ 8µA | 2.1nC @ 5V | 28pF @ 25V | ±20V | Depletion Mode | 500mW (Ta) | 500 Ohm @ 16mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT23-3 | TO-236-3, SC-59, SOT-23-3 |
||
Infineon Technologies |
MOSFET N-CH 55V 89A TO-262
|
pacchetto: TO-262-3 Long Leads, I2Pak, TO-262AA |
Azione84.396 |
|
MOSFET (Metal Oxide) | 55V | 89A (Tc) | 4V, 10V | 2V @ 250µA | 98nC @ 5V | 3600pF @ 25V | ±16V | - | 3.8W (Ta), 170W (Tc) | 10 mOhm @ 46A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I2Pak, TO-262AA |
||
Infineon Technologies |
MOSFET P-CH 100V 6.6A DPAK
|
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Azione6.592 |
|
MOSFET (Metal Oxide) | 100V | 6.6A (Tc) | 10V | 4V @ 250µA | 27nC @ 10V | 350pF @ 25V | ±20V | - | 40W (Tc) | 480 mOhm @ 3.9A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 60V 500MA TO-92
|
pacchetto: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Azione5.088 |
|
MOSFET (Metal Oxide) | 60V | 500mA (Ta) | 10V | 3V @ 1mA | - | 40pF @ 10V | ±20V | - | 830mW (Ta) | 5 Ohm @ 200mA, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
||
Nexperia USA Inc. |
MOSFET N-CH 55V 75A TO220AB
|
pacchetto: TO-220-3 |
Azione7.488 |
|
MOSFET (Metal Oxide) | 55V | 75A (Tc) | 10V | 4V @ 1mA | 86nC @ 10V | 6776pF @ 25V | ±20V | - | 300W (Tc) | 4 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 500V 22A TO-3P
|
pacchetto: TO-3P-3, SC-65-3 |
Azione438.540 |
|
MOSFET (Metal Oxide) | 500V | 22A (Tc) | 10V | 4V @ 250µA | 236nC @ 10V | 5120pF @ 25V | ±30V | - | 278W (Tc) | 250 mOhm @ 11A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-3P | TO-3P-3, SC-65-3 |
||
Vishay Siliconix |
MOSFET N-CH 300V 6.1A D2PAK
|
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Azione7.312 |
|
MOSFET (Metal Oxide) | 300V | 6.1A (Tc) | 10V | 4V @ 250µA | 17nC @ 10V | 430pF @ 25V | ±30V | - | - | 750 mOhm @ 3.7A, 10V | - | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Vishay Siliconix |
MOSFET P-CH 100V 11A TO220FP
|
pacchetto: TO-220-3 Full Pack, Isolated Tab |
Azione2.368 |
|
MOSFET (Metal Oxide) | 100V | 11A (Tc) | 10V | 4V @ 250µA | 61nC @ 10V | 1400pF @ 25V | ±20V | - | 48W (Tc) | 200 mOhm @ 6.6A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 Full Pack, Isolated Tab |
||
STMicroelectronics |
MOSFET N-CH 600V 13.5A TO-220
|
pacchetto: TO-220-3 |
Azione10.020 |
|
MOSFET (Metal Oxide) | 600V | 13.5A (Tc) | 10V | 4.5V @ 100µA | 75nC @ 10V | 2220pF @ 25V | ±30V | - | 160W (Tc) | 500 mOhm @ 6A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Infineon Technologies |
CONSUMER
|
pacchetto: - |
Azione5.728 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
IXYS |
MOSFET N-CH 500V 36A TO-268 D3
|
pacchetto: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA |
Azione7.152 |
|
MOSFET (Metal Oxide) | 500V | 36A (Tc) | 10V | 5V @ 250µA | 85nC @ 10V | 5500pF @ 25V | ±30V | - | 540W (Tc) | 170 mOhm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-268 | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA |
||
Renesas Electronics America |
MOSFET N-CH 600V 3A TO251
|
pacchetto: TO-251-3 Short Leads, IPak, TO-251AA |
Azione7.216 |
|
MOSFET (Metal Oxide) | 600V | 3A (Ta) | 10V | - | 9nC @ 10V | 285pF @ 25V | ±30V | - | 40.3W (Tc) | 4.3 Ohm @ 1.5A, 10V | 150°C (TJ) | Through Hole | TO-251 | TO-251-3 Short Leads, IPak, TO-251AA |
||
Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 650V 7A TO262F
|
pacchetto: TO-262-3 Long Leads, I2Pak, TO-262AA |
Azione5.616 |
|
MOSFET (Metal Oxide) | 650V | 7A (Tc) | 10V | 4V @ 250µA | 9.2nC @ 10V | 434pF @ 100V | ±30V | - | 25W (Tc) | 650 mOhm @ 3.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | - | TO-262-3 Long Leads, I2Pak, TO-262AA |
||
ON Semiconductor |
MOSFET N-CH 60V 20A DPAK
|
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Azione3.584 |
|
MOSFET (Metal Oxide) | 60V | 20A (Ta) | 10V | 4V @ 250µA | 30nC @ 10V | 1015pF @ 25V | ±20V | - | 1.88W (Ta), 60W (Tj) | 46 mOhm @ 10A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | DPAK-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 600V 5.5A DPAK-3
|
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Azione4.352 |
|
MOSFET (Metal Oxide) | 600V | 5.5A (Tc) | 10V | 5V @ 250µA | 17nC @ 10V | 730pF @ 25V | ±25V | - | 90W (Tc) | 1.25 Ohm @ 2.75A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Alpha & Omega Semiconductor Inc. |
MOSFET N-CH
|
pacchetto: 8-PowerSMD, Flat Leads |
Azione7.856 |
|
MOSFET (Metal Oxide) | 30V | 20A (Ta), 35A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 30nC @ 10V | 1150pF @ 15V | ±20V | - | 5W (Ta), 41W (Tc) | 7.5 mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-DFN (5x6) | 8-PowerSMD, Flat Leads |
||
STMicroelectronics |
MOSFET N-CH 600V 6A TO-220FP
|
pacchetto: TO-220-3 Full Pack |
Azione813.564 |
|
MOSFET (Metal Oxide) | 600V | 6A (Tc) | 10V | 4.5V @ 100µA | 46nC @ 10V | 905pF @ 25V | ±30V | - | 30W (Tc) | 1.2 Ohm @ 3A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
||
Vishay Siliconix |
MOSFET P-CH 30V 50A PPAK SO-8
|
pacchetto: PowerPAK? SO-8 |
Azione100.104 |
|
MOSFET (Metal Oxide) | 30V | 50A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 147nC @ 10V | 4590pF @ 15V | ±25V | - | 5.2W (Ta), 69W (Tc) | 5.2 mOhm @ 15A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK? SO-8 | PowerPAK? SO-8 |
||
Vishay Siliconix |
MOSFET P-CH 30V 50A TO263
|
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Azione18.180 |
|
MOSFET (Metal Oxide) | 30V | 50A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 155nC @ 10V | 5380pF @ 25V | ±20V | - | 150W (Tc) | 7 mOhm @ 30A, 10V | -55°C ~ 175°C (TA) | Surface Mount | TO-263 (D2Pak) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
IXYS |
MOSFET N-CH 600V 40A SOT-227
|
pacchetto: SOT-227-4, miniBLOC |
Azione7.168 |
|
MOSFET (Metal Oxide) | 600V | 40A | 10V | 5.5V @ 8mA | 150nC @ 10V | 8860pF @ 25V | ±30V | - | 625W (Tc) | 140 mOhm @ 4A, 10V | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227B | SOT-227-4, miniBLOC |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 200V 19.4A TO-220
|
pacchetto: TO-220-3 |
Azione218.712 |
|
MOSFET (Metal Oxide) | 200V | 19.4A (Tc) | 10V | 5V @ 250µA | 40nC @ 10V | 1600pF @ 25V | ±30V | - | 140W (Tc) | 150 mOhm @ 9.7A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
||
Infineon Technologies |
MOSFET N-CH 25V 90A TO-252
|
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Azione3.584 |
|
MOSFET (Metal Oxide) | 25V | 90A (Tc) | 4.5V, 10V | 2V @ 70µA | 41nC @ 5V | 5200pF @ 15V | ±20V | - | 115W (Tc) | 3.2 mOhm @ 60A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Infineon Technologies |
MOSFET N-CH 40V 100A TDSON-8
|
pacchetto: 8-PowerTDFN |
Azione2.688 |
|
MOSFET (Metal Oxide) | 40V | 100A (Tc) | 4.5V, 10V | 2V @ 250µA | 37nC @ 10V | 2600pF @ 20V | ±20V | - | 2.5W (Ta), 69W (Tc) | 2.2 mOhm @ 50A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8 | 8-PowerTDFN |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 60V 22A TO-263AB
|
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Azione2.704 |
|
MOSFET (Metal Oxide) | 60V | 22A (Ta) | 10V | 4V @ 250µA | 124nC @ 10V | 6400pF @ 25V | ±20V | - | 310W (Tc) | 3.5 mOhm @ 80A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK (TO-263AB) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Fairchild/ON Semiconductor |
MOSFET P-CH 12V 6-UMLP
|
pacchetto: 6-PowerUFDFN |
Azione120.000 |
|
MOSFET (Metal Oxide) | 12V | 8A (Ta) | 1.8V, 4.5V | 1V @ 250µA | 20nC @ 4.5V | 2315pF @ 6V | ±8V | - | 2.1W (Ta) | 22 mOhm @ 8A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | MicroFet 1.6x1.6 Thin | 6-PowerUFDFN |
||
Microchip Technology |
MOSFET N-CH 240V 0.134A SOT23-3
|
pacchetto: TO-236-3, SC-59, SOT-23-3 |
Azione137.976 |
|
MOSFET (Metal Oxide) | 240V | 134mA (Tj) | 3V, 4.5V | 2V @ 1mA | - | 50pF @ 25V | ±20V | - | 360mW (Tc) | 15 Ohm @ 120mA, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | TO-236AB (SOT23) | TO-236-3, SC-59, SOT-23-3 |
||
STMicroelectronics |
MOSFET N-CH 650V 18A TO-220
|
pacchetto: TO-220-3 |
Azione7.984 |
|
MOSFET (Metal Oxide) | 650V | 18A (Tc) | 10V | 5V @ 250µA | 45nC @ 10V | 1345pF @ 100V | ±25V | - | 130W (Tc) | 190 mOhm @ 9A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
||
Infineon Technologies |
MOSFET N-CH 100V 9.4A I-PAK
|
pacchetto: TO-251-3 Short Leads, IPak, TO-251AA |
Azione123.660 |
|
MOSFET (Metal Oxide) | 100V | 9.4A (Tc) | 10V | 4V @ 250µA | 25nC @ 10V | 330pF @ 25V | ±20V | - | 48W (Tc) | 210 mOhm @ 5.6A, 10V | -55°C ~ 175°C (TJ) | Through Hole | IPAK (TO-251) | TO-251-3 Short Leads, IPak, TO-251AA |
||
Fairchild/ON Semiconductor |
MOSFET P-CH 20V 6.6A MFET 2X2
|
pacchetto: 6-VDFN Exposed Pad |
Azione1.559.460 |
|
MOSFET (Metal Oxide) | 20V | 6.6A (Ta) | 1.8V, 4.5V | 1V @ 250µA | 14nC @ 4.5V | 1000pF @ 10V | ±8V | - | 2.4W (Ta) | 42 mOhm @ 6.6A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 6-MicroFET (2x2) | 6-VDFN Exposed Pad |