Immagine |
Numero di parte |
Produttore |
Descrizione |
pacchetto |
Azione |
Quantità |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
ON Semiconductor |
MOSFET N-CH 25V 15.2A SO-8FL
|
pacchetto: 8-PowerTDFN |
Azione7.440 |
|
MOSFET (Metal Oxide) | 25V | 15.2A (Ta), 149A (Tc) | 3.2V, 10V | 2.5V @ 250µA | 85nC @ 11.5V | 4830pF @ 12V | ±16V | - | 900mW (Ta), 86.2W (Tc) | 2.5 mOhm @ 15A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SO-8FL | 8-PowerTDFN |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 11A SOP8 2-6J1B
|
pacchetto: 8-SOIC (0.173", 4.40mm Width) |
Azione3.376 |
|
MOSFET (Metal Oxide) | 30V | 11A (Ta) | 4.5V, 10V | 2.5V @ 1mA | 39nC @ 10V | 1860pF @ 10V | ±20V | - | 1W (Ta) | 14 mOhm @ 5.5A, 10V | 150°C (TJ) | Surface Mount | 8-SOP (5.5x6.0) | 8-SOIC (0.173", 4.40mm Width) |
||
ON Semiconductor |
MOSFET N-CH 20V 3.3A SOT-23
|
pacchetto: TO-236-3, SC-59, SOT-23-3 |
Azione3.026.508 |
|
MOSFET (Metal Oxide) | 20V | - | 1.8V, 4.5V | 1V @ 250µA | 7.3nC @ 4.5V | 540pF @ 10V | ±8V | - | 820mW (Ta) | 50 mOhm @ 3.3A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 (TO-236) | TO-236-3, SC-59, SOT-23-3 |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 200V 21A TO-220
|
pacchetto: TO-220-3 |
Azione5.632 |
|
MOSFET (Metal Oxide) | 200V | 21A (Tc) | 5V, 10V | 2V @ 250µA | 35nC @ 5V | 2200pF @ 25V | ±20V | - | 140W (Tc) | 140 mOhm @ 10.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
||
Vishay Siliconix |
MOSFET N-CH 900V 4.7A TO-247AC
|
pacchetto: TO-247-3 |
Azione9.360 |
|
MOSFET (Metal Oxide) | 900V | 4.7A (Tc) | 10V | 4V @ 250µA | 120nC @ 10V | 1600pF @ 25V | ±20V | - | 150W (Tc) | 2.5 Ohm @ 2.8A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
||
Vishay Siliconix |
MOSFET N-CH 400V 10A TO-220AB
|
pacchetto: TO-220-3 |
Azione6.624 |
|
MOSFET (Metal Oxide) | 400V | 10A (Tc) | 10V | 4V @ 250µA | 36nC @ 10V | 1030pF @ 25V | ±30V | - | 125W (Tc) | 550 mOhm @ 6A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
STMicroelectronics |
MOSFET N-CH 600V 7A IPAK
|
pacchetto: TO-251-3 Short Leads, IPak, TO-251AA |
Azione2.224 |
|
MOSFET (Metal Oxide) | 600V | 7A (Tc) | 10V | 4V @ 250µA | 19nC @ 10V | 560pF @ 50V | ±25V | - | 70W (Tc) | 650 mOhm @ 3.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | I-Pak | TO-251-3 Short Leads, IPak, TO-251AA |
||
Infineon Technologies |
MOSFET P-CH 55V 74A TO-262
|
pacchetto: TO-262 |
Azione15.264 |
|
MOSFET (Metal Oxide) | 55V | 42A (Tc) | 10V | 4V @ 250µA | 180nC @ 10V | 3500pF @ 25V | ±20V | - | 200W (Tc) | 20 mOhm @ 42A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-262 | TO-262 |
||
IXYS |
MOSFET N-CH 100V 165A ISOPLUS247
|
pacchetto: ISOPLUS247? |
Azione5.792 |
|
MOSFET (Metal Oxide) | 100V | 165A (Tc) | 10V | 4V @ 8mA | 400nC @ 10V | 9400pF @ 25V | ±20V | - | 400W (Tc) | 8 mOhm @ 90A, 10V | -55°C ~ 150°C (TJ) | Through Hole | ISOPLUS247? | ISOPLUS247? |
||
IXYS |
MOSFET N-CH 600V 50A TO247
|
pacchetto: TO-247-3 |
Azione3.328 |
|
MOSFET (Metal Oxide) | 600V | 50A (Tc) | 10V | 4.5V @ 4mA | 116nC @ 10V | 4660pF @ 25V | ±30V | - | 660W (Tc) | 73 mOhm @ 25A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
||
Vishay Siliconix |
MOSFET P-CH 200V 1.9A DPAK
|
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Azione7.568 |
|
MOSFET (Metal Oxide) | 200V | 1.9A (Tc) | 10V | 4V @ 250µA | 8.9nC @ 10V | 170pF @ 25V | ±20V | - | 2.5W (Ta), 25W (Tc) | 3 Ohm @ 1.1A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
ON Semiconductor |
MOSFET N-CH 60V 17A DPAK
|
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Azione5.984 |
|
MOSFET (Metal Oxide) | 60V | 5A (Ta), 17A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 14nC @ 10V | 365pF @ 25V | ±20V | - | 3.4W (Ta), 49W (Tc) | 64 mOhm @ 9A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Torex Semiconductor Ltd |
MOSFET N-CH 30V 1A SOT23
|
pacchetto: TO-236-3, SC-59, SOT-23-3 |
Azione763.200 |
|
MOSFET (Metal Oxide) | 30V | 1A (Ta) | 4.5V, 10V | - | - | 150pF @ 10V | ±20V | - | 500mW (Ta) | 120 mOhm @ 500mA, 10V | 150°C (TJ) | Surface Mount | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
||
Diodes Incorporated |
MOSFET P-CH 30V 9.8A POWERDI3333
|
pacchetto: 8-PowerWDFN |
Azione6.112 |
|
MOSFET (Metal Oxide) | 30V | 9.8A (Ta) | 4.5V, 20V | 3V @ 250µA | 58nC @ 10V | 2987pF @ 15V | ±25V | - | 940mW (Ta) | 11 mOhm @ 12A, 20V | -55°C ~ 150°C (TJ) | Surface Mount | PowerDI3333-8 | 8-PowerWDFN |
||
TSC America Inc. |
MOSFET, SINGLE, N-CHANNEL, PLANA
|
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Azione4.736 |
|
MOSFET (Metal Oxide) | 800V | 3A (Tc) | 10V | 4V @ 250µA | 19nC @ 10V | 696pF @ 25V | ±30V | - | 94W (Tc) | 4.2 Ohm @ 1.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
STMicroelectronics |
MOSFET N-CH 800V 6.5A TO-220
|
pacchetto: TO-220-3 |
Azione6.960 |
|
MOSFET (Metal Oxide) | 800V | 6.5A (Tc) | 10V | 5V @ 250µA | 18nC @ 10V | 620pF @ 25V | ±30V | - | 90W (Tc) | 1.05 Ohm @ 3.25A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
||
Nexperia USA Inc. |
MOSFET N-CH 30V 100A LFPAK
|
pacchetto: SC-100, SOT-669 |
Azione15.036 |
|
MOSFET (Metal Oxide) | 30V | 100A (Tc) | 4.5V, 10V | 2.15V @ 1mA | 41nC @ 10V | 2458pF @ 12V | ±20V | - | 74W (Tc) | 3.5 mOhm @ 15A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
||
EPC |
TRANS GAN 40V 33A BUMPED DIE
|
pacchetto: Die |
Azione224.706 |
|
GaNFET (Gallium Nitride) | 40V | 53A (Ta) | 5V | 2.5V @ 9mA | 8.7nC @ 5V | 980pF @ 20V | +6V, -4V | - | - | 4 mOhm @ 33A, 5V | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die |
||
Vishay Siliconix |
MOSFET N-CH 60V 5.6A 1212-8
|
pacchetto: PowerPAK? 1212-8 |
Azione614.472 |
|
MOSFET (Metal Oxide) | 60V | 5.6A (Ta) | 4.5V, 10V | 3V @ 250µA | 25nC @ 10V | - | ±20V | - | 1.5W (Ta) | 25 mOhm @ 8.7A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK? 1212-8 | PowerPAK? 1212-8 |
||
Comchip Technology |
MOSFET N-CH 20V 7A SOT23-3
|
pacchetto: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 20 V | 7A (Ta) | 1.8V, 4.5V | 1V @ 250µA | 8.1 nC @ 4.5 V | 980 pF @ 10 V | ±12V | - | 1.3W (Ta) | 18mOhm @ 7A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
||
onsemi |
NCH+SBD 2.5V DRIVE SERIES
|
pacchetto: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Goford Semiconductor |
P-60V,RD(MAX)<18M@-10V,VTH-2.0V~
|
pacchetto: - |
Azione369 |
|
MOSFET (Metal Oxide) | 60 V | 65A (Tc) | 10V | 3.5V @ 250µA | 75 nC @ 10 V | 5814 pF @ 25 V | ±20V | - | 130W (Tc) | 18mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
||
Wolfspeed, Inc. |
SICFET N-CH 1200V 30A TO247-3
|
pacchetto: - |
Azione3.012 |
|
SiCFET (Silicon Carbide) | 1200 V | 30A (Tc) | 15V | 4V @ 5mA | 54 nC @ 15 V | 1350 pF @ 1000 V | +19V, -8V | - | 113.6W (Tc) | 90mOhm @ 20A, 15V | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
||
Toshiba Semiconductor and Storage |
G3 1200V SIC-MOSFET TO-247-4L 14
|
pacchetto: - |
Azione360 |
|
SiC (Silicon Carbide Junction Transistor) | 1200 V | 20A (Tc) | 18V | 5V @ 1mA | 24 nC @ 18 V | 691 pF @ 800 V | +25V, -10V | - | 107W (Tc) | 191mOhm @ 10A, 18V | 175°C | Through Hole | TO-247-4L(X) | TO-247-4 |
||
Diodes Incorporated |
MOSFET BVDSS: 8V~24V SOT23 T&R 1
|
pacchetto: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 20 V | 4A (Ta) | 1.8V, 4.5V | 900mV @ 250µA | 10.2 nC @ 4.5 V | 808 pF @ 15 V | ±12V | - | 900mW | 60mOhm @ 4.2A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
||
Infineon Technologies |
MOSFET N-CH 100V 12A/59A TDSON-8
|
pacchetto: - |
Azione12.831 |
|
MOSFET (Metal Oxide) | 100 V | 12A (Ta), 59A (Tc) | 4.5V, 10V | 2.3V @ 28µA | 24 nC @ 10 V | 1600 pF @ 50 V | ±20V | - | 2.5W (Ta), 60W (Tc) | 10.9mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8 | 8-PowerTDFN |
||
Panjit International Inc. |
30V N-CHANNEL ENHANCEMENT MODE M
|
pacchetto: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 30 V | 6.4A (Ta) | 2.5V, 10V | 1.3V @ 250µA | 6 nC @ 10 V | 490 pF @ 15 V | ±12V | - | 2W (Ta) | 37mOhm @ 6.4A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 | SOT-23-6 |
||
Vishay Siliconix |
MOSFET N-CH 60V 9.8A/16A PPAK
|
pacchetto: - |
Azione14.670 |
|
MOSFET (Metal Oxide) | 60 V | 9.8A (Ta), 16A (Tc) | 7.5V, 10V | 4V @ 250µA | 13.5 nC @ 10 V | 540 pF @ 30 V | ±20V | - | 3.2W (Ta), 24W (Tc) | 18.5mOhm @ 4A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8 | PowerPAK® 1212-8 |
||
Good-Ark Semiconductor |
MOSFET, N-CH, SINGLE, 75A, 80V,
|
pacchetto: - |
Azione3 |
|
MOSFET (Metal Oxide) | 100 V | 140A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 100 nC @ 10 V | 6000 pF @ 50 V | ±20V | - | 192W (Tc) | 3.6mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-PPAK (5.1x5.71) | 8-PowerTDFN |
||
Vishay Siliconix |
AUTOMOTIVE N-CHANNEL 40 V (D-S)
|
pacchetto: - |
Azione4.863 |
|
MOSFET (Metal Oxide) | 40 V | 504A (Tc) | 4.5V, 10V | 2.2V @ 250µA | 294 nC @ 10 V | 15398 pF @ 25 V | ±20V | - | 266W (Tc) | 0.6mOhm @ 15A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PowerPAK® SO-8SW | PowerPAK® SO-8 |