Immagine |
Numero di parte |
Produttore |
Descrizione |
pacchetto |
Azione |
Quantità |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
MOSFET N-CH 40V 12.7A DIRECTFET
|
pacchetto: DirectFET? Isometric ST |
Azione5.072 |
|
MOSFET (Metal Oxide) | 40V | 12.7A (Ta), 55A (Tc) | 4.5V, 10V | 2.25V @ 250µA | 29nC @ 4.5V | 2560pF @ 20V | ±20V | - | 2.1W (Ta), 42W (Tc) | 8.3 mOhm @ 12.7A, 10V | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET? ST | DirectFET? Isometric ST |
||
Infineon Technologies |
MOSFET N-CH 200V 4.6A DIRECTFET
|
pacchetto: DirectFET? Isometric MZ |
Azione7.312 |
|
MOSFET (Metal Oxide) | 200V | 4.6A (Ta), 26A (Tc) | 10V | 4.9V @ 150µA | 48nC @ 10V | 2290pF @ 25V | ±20V | - | 2.8W (Ta), 89W (Tc) | 59.9 mOhm @ 5.5A, 10V | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET? MZ | DirectFET? Isometric MZ |
||
Infineon Technologies |
MOSFET N-CH 30V 100A TO-262
|
pacchetto: TO-262-3 Long Leads, I2Pak, TO-262AA |
Azione6.704 |
|
MOSFET (Metal Oxide) | 30V | 100A (Tc) | 10V | 2V @ 250µA | 220nC @ 10V | 8180pF @ 25V | ±20V | - | 300W (Tc) | 3 mOhm @ 80A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO262-3-1 | TO-262-3 Long Leads, I2Pak, TO-262AA |
||
Diodes Incorporated |
MOSFET P-CH 30V 1.5A SOT23-6
|
pacchetto: SOT-23-6 |
Azione3.232 |
|
MOSFET (Metal Oxide) | 30V | 1.5A (Ta) | 4.5V, 10V | 1V @ 250µA | 10.2nC @ 10V | 330pF @ 25V | ±20V | - | 625mW (Ta) | 230 mOhm @ 800mA, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-26 | SOT-23-6 |
||
Alpha & Omega Semiconductor Inc. |
MOSFET P-CH 30V 6.3A 6DFN
|
pacchetto: 6-UDFN Exposed Pad |
Azione16.800 |
|
MOSFET (Metal Oxide) | 30V | 6.3A (Ta) | 2.5V, 10V | 1.5V @ 250µA | 21nC @ 10V | 746pF @ 15V | ±12V | - | 2.8W (Ta) | 37.5 mOhm @ 6.3A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 6-DFN-EP (2x2) | 6-UDFN Exposed Pad |
||
Vishay Siliconix |
MOSFET N-CH 20V DPAK
|
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Azione122.160 |
|
MOSFET (Metal Oxide) | 20V | - | 4.5V, 10V | 3V @ 250µA | 16nC @ 4.5V | 1300pF @ 10V | ±20V | - | 6.5W (Ta), 39.5W (Tc) | 9.5 mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
ON Semiconductor |
MOSFET P-CH 20V 3.2A CHIPFET
|
pacchetto: 8-SMD, Flat Lead |
Azione2.448 |
|
MOSFET (Metal Oxide) | 20V | 3.2A (Tj) | 1.8V, 4.5V | 1.5V @ 250µA | 7.4nC @ 4.5V | 680pF @ 10V | ±8V | Schottky Diode (Isolated) | 1.1W (Ta) | 80 mOhm @ 3.2A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | ChipFET? | 8-SMD, Flat Lead |
||
NXP |
MOSFET N-CH 25V 75A SOT533
|
pacchetto: TO-251-3 Short Leads, IPak, TO-251AA |
Azione2.192 |
|
MOSFET (Metal Oxide) | 25V | 75A (Tc) | 5V, 10V | 2V @ 1mA | 16.3nC @ 4.5V | 1375pF @ 12V | ±20V | - | 187W (Tc) | 6 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Through Hole | I-Pak | TO-251-3 Short Leads, IPak, TO-251AA |
||
NXP |
MOSFET N-CH 60V 10.3A TO220AB
|
pacchetto: TO-220-3 |
Azione2.768 |
|
MOSFET (Metal Oxide) | 60V | 10.3A (Tc) | 10V | 4V @ 1mA | 5.8nC @ 10V | 250pF @ 25V | ±20V | - | 33W (Tc) | 150 mOhm @ 5.5A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Diodes Incorporated |
MOSFET N-CH 50V 280MA SOT23-3
|
pacchetto: TO-236-3, SC-59, SOT-23-3 |
Azione2.880 |
|
MOSFET (Metal Oxide) | 50V | 280mA (Ta) | 1.8V, 2.7V | 1.2V @ 250µA | - | 50pF @ 25V | ±20V | - | 350mW (Ta) | 3 Ohm @ 200mA, 2.7V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
||
Diodes Incorporated |
MOSFET N-CH 350V 0.09A TO92-3
|
pacchetto: E-Line-3 |
Azione6.848 |
|
MOSFET (Metal Oxide) | 350V | 90mA (Ta) | 10V | 3V @ 1mA | - | 70pF @ 25V | ±20V | - | 700mW (Ta) | 35 Ohm @ 100mA, 10V | -55°C ~ 150°C (TJ) | Through Hole | E-Line (TO-92 compatible) | E-Line-3 |
||
STMicroelectronics |
MOSFET N-CH 600V 25A TO-220
|
pacchetto: TO-220-3 |
Azione7.568 |
|
MOSFET (Metal Oxide) | 600V | 25A (Tc) | 10V | 4V @ 250µA | 91nC @ 10V | 2700pF @ 50V | ±30V | - | 190W (Tc) | 130 mOhm @ 12.5A, 10V | 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
STMicroelectronics |
MOSFET N-CH 600V 5.75A POWERFLAT
|
pacchetto: 8-PowerVDFN |
Azione12.720 |
|
MOSFET (Metal Oxide) | 600V | 5.75A (Tc) | 10V | 4V @ 250µA | 13nC @ 10V | 420pF @ 50V | ±25V | - | 70W (Tc) | 920 mOhm @ 2.3A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerFLAT? (5x5) | 8-PowerVDFN |
||
IXYS |
MOSFET N-CH 1KV 22A ISOPLUS247
|
pacchetto: ISOPLUS247? |
Azione5.088 |
|
MOSFET (Metal Oxide) | 1000V | 22A (Tc) | 10V | 5.5V @ 8mA | 267nC @ 10V | 8700pF @ 25V | ±20V | - | 416W (Tc) | 390 mOhm @ 12A, 10V | -55°C ~ 150°C (TJ) | Through Hole | ISOPLUS247? | ISOPLUS247? |
||
IXYS |
MOSFET N-CH 100V 110A TO-247
|
pacchetto: TO-247-3 |
Azione6.544 |
|
MOSFET (Metal Oxide) | 100V | 110A (Tc) | 10V | 5V @ 4mA | 110nC @ 10V | 3550pF @ 25V | ±20V | - | 480W (Tc) | 15 mOhm @ 500mA, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-247AD (IXFH) | TO-247-3 |
||
IXYS |
MOSFET N-CH 75V 230A TO-263
|
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Azione3.168 |
|
MOSFET (Metal Oxide) | 75V | 230A (Tc) | 10V | 4V @ 250µA | 178nC @ 10V | 10500pF @ 25V | ±20V | - | 480W (Tc) | 4.2 mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (IXTA) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
ON Semiconductor |
MOSFET N-CH 40V SO8FL
|
pacchetto: 8-PowerTDFN |
Azione2.272 |
|
MOSFET (Metal Oxide) | 40V | 16A (Ta) | 10V | 3.5V @ 250µA | 32.5nC @ 10V | 1714pF @ 25V | ±20V | - | 3.7W (Ta), 112W (Tc) | 7.5 mOhm @ 40A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN |
||
ON Semiconductor |
MOSFET N-CH 35V 6A CPH6
|
pacchetto: SOT-23-6 Thin, TSOT-23-6 |
Azione8.484 |
|
MOSFET (Metal Oxide) | 35V | 6A (Ta) | 4V, 10V | - | 10nC @ 10V | 470pF @ 20V | ±20V | - | 1.6W (Ta) | 37 mOhm @ 3A, 10V | 150°C (TJ) | Surface Mount | 6-CPH | SOT-23-6 Thin, TSOT-23-6 |
||
Alpha & Omega Semiconductor Inc. |
MOSFET P-CH 30V 8A 8DFN
|
pacchetto: 8-SMD, Flat Lead |
Azione8.676 |
|
MOSFET (Metal Oxide) | 30V | 8A (Ta) | 4.5V, 10V | 1.8V @ 250µA | 21nC @ 10V | 1120pF @ 15V | ±20V | - | 2.5W (Ta) | 26 mOhm @ 8A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-DFN (3x2) | 8-SMD, Flat Lead |
||
Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 20V 2A SC70-3
|
pacchetto: SC-70, SOT-323 |
Azione435.900 |
|
MOSFET (Metal Oxide) | 20V | 2A (Ta) | 1.8V, 4.5V | 1V @ 250µA | 3.8nC @ 4.5V | 320pF @ 10V | ±8V | - | 350mW (Ta) | 62 mOhm @ 2A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | SC-70-3 | SC-70, SOT-323 |
||
STMicroelectronics |
MOSFET N-CH 600V 11A DPAK
|
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Azione34.632 |
|
MOSFET (Metal Oxide) | 600V | 11A (Tc) | 10V | 4V @ 250µA | 17nC @ 10V | 580pF @ 100V | ±25V | - | 110W (Tc) | 380 mOhm @ 5.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 50V 220MA SOT-23-3
|
pacchetto: TO-236-3, SC-59, SOT-23-3 |
Azione454.224 |
|
MOSFET (Metal Oxide) | 50V | 220mA (Ta) | 1.8V, 2.5V | 1.2V @ 250µA | 2.4nC @ 10V | 58pF @ 25V | ±12V | - | 350mW (Ta) | 1.6 Ohm @ 50mA, 5V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
||
IXYS |
2000V TO 3000V POLAR3 POWER MOSF
|
pacchetto: TO-247-3 Variant |
Azione5.104 |
|
MOSFET (Metal Oxide) | 3000V | 1A (Tc) | 10V | 4V @ 250µA | 30.6nC @ 10V | 895pF @ 25V | ±20V | - | 195W (Tc) | 50 Ohm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247HV | TO-247-3 Variant |
||
Vishay Siliconix |
MOSFET N-CH 200V 9A D2PAK
|
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Azione3.216 |
|
MOSFET (Metal Oxide) | 200V | 9A (Tc) | 10V | 4V @ 250µA | 43nC @ 10V | 800pF @ 25V | ±20V | - | 3W (Ta), 74W (Tc) | 400 mOhm @ 5.4A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK (TO-263) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 650V 5.2A IPAK
|
pacchetto: TO-251-3 Stub Leads, IPak |
Azione6.324 |
|
MOSFET (Metal Oxide) | 650V | 5.2A (Ta) | 10V | 3.5V @ 170µA | 10.5nC @ 10V | 380pF @ 300V | ±30V | - | 60W (Tc) | 1.22 Ohm @ 2.6A, 10V | 150°C (TJ) | Through Hole | I-Pak | TO-251-3 Stub Leads, IPak |
||
STMicroelectronics |
N-CHANNEL 800 V, 0.75 OHM TYP.,
|
pacchetto: TO-247-3 |
Azione5.024 |
|
MOSFET (Metal Oxide) | 900V | - | 10V | 5V @ 100µA | - | - | ±30V | Current Sensing | - | - | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 25V 28A PQFN
|
pacchetto: 8-PowerTDFN |
Azione3.984 |
|
MOSFET (Metal Oxide) | 25V | 28A (Ta), 60A (Tc) | 4.5V, 10V | 2.2V @ 1mA | 42nC @ 10V | 2825pF @ 13V | ±12V | Schottky Diode (Body) | 3.3W (Ta), 59W (Tc) | 2.8 mOhm @ 28A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | Dual Cool?56 | 8-PowerTDFN |
||
STMicroelectronics |
MOSFET N-CH 30V 19A POWERFLAT6X5
|
pacchetto: 8-PowerVDFN |
Azione12.624 |
|
MOSFET (Metal Oxide) | 30V | 65A (Tc) | 4.5V, 10V | 1V @ 250µA | 12nC @ 4.5V | 1500pF @ 25V | ±22V | - | 60W (Tc) | 5.8 mOhm @ 9.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerFlat? (6x5) | 8-PowerVDFN |
||
Infineon Technologies |
MOSFET N-CH 40V 23A DIRECTFET
|
pacchetto: DirectFET? Isometric MT |
Azione20.160 |
|
MOSFET (Metal Oxide) | 40V | 23A (Ta), 150A (Tc) | 4.5V, 10V | 2.25V @ 250µA | 63nC @ 4.5V | 5950pF @ 15V | ±20V | - | 2.8W (Ta), 89W (Tc) | 3.4 mOhm @ 23A, 10V | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET? MT | DirectFET? Isometric MT |
||
Fairchild/ON Semiconductor |
MOSFET P-CH 20V 18A 8-MLP
|
pacchetto: 8-PowerWDFN |
Azione1.015.068 |
|
MOSFET (Metal Oxide) | 20V | 12A (Ta), 18A (Tc) | 1.5V, 4.5V | 1V @ 250µA | 116nC @ 4.5V | 7860pF @ 10V | ±8V | - | 2.3W (Ta), 41W (Tc) | 8 mOhm @ 12A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 8-MLP (3.3x3.3) | 8-PowerWDFN |