Immagine |
Numero di parte |
Produttore |
Descrizione |
pacchetto |
Azione |
Quantità |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
MOSFET N-CH 100V DPAK
|
pacchetto: - |
Azione4.672 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Infineon Technologies |
MOSFET N-CH 80V 38A IPAK
|
pacchetto: TO-251-3 Short Leads, IPak, TO-251AA |
Azione291.600 |
|
MOSFET (Metal Oxide) | 80V | 38A (Tc) | 10V | 4V @ 250µA | 56nC @ 10V | 1710pF @ 25V | ±20V | - | 110W (Tc) | 29 mOhm @ 18A, 10V | -55°C ~ 175°C (TJ) | Through Hole | IPAK (TO-251) | TO-251-3 Short Leads, IPak, TO-251AA |
||
Infineon Technologies |
MOSFET N-CH 55V 42A I-PAK
|
pacchetto: TO-251-3 Short Leads, IPak, TO-251AA |
Azione7.152 |
|
MOSFET (Metal Oxide) | 55V | 42A (Tc) | 10V | 4V @ 250µA | 44nC @ 10V | 1380pF @ 25V | ±20V | - | 110W (Tc) | 14.5 mOhm @ 36A, 10V | -55°C ~ 175°C (TJ) | Through Hole | IPAK (TO-251) | TO-251-3 Short Leads, IPak, TO-251AA |
||
Alpha & Omega Semiconductor Inc. |
MOSFET P-CH 30V 7A 8SOIC
|
pacchetto: 8-SOIC (0.154", 3.90mm Width) |
Azione4.656 |
|
MOSFET (Metal Oxide) | 30V | 7A (Ta) | 4.5V, 10V | 2.4V @ 250µA | 16nC @ 10V | 910pF @ 15V | ±20V | - | 3.1W (Ta) | 34 mOhm @ 7A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
||
Microsemi Corporation |
MOSFET N-CH
|
pacchetto: TO-204AA, TO-3 |
Azione6.832 |
|
MOSFET (Metal Oxide) | 400V | 5.5A (Tc) | 10V | 4V @ 250µA | 39nC @ 10V | - | ±20V | - | 4W (Ta), 75W (Tc) | 1.22 Ohm @ 5.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-204AA (TO-3) | TO-204AA, TO-3 |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 60V 45A TO220SM
|
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Azione2.384 |
|
MOSFET (Metal Oxide) | 60V | 45A (Ta) | 4V, 10V | 2V @ 1mA | 60nC @ 10V | 1800pF @ 10V | ±20V | - | 65W (Tc) | 30 mOhm @ 25A, 10V | 150°C (TJ) | Surface Mount | TO-220SM | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Vishay Siliconix |
MOSFET P-CH 100V 5.6A DPAK
|
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Azione5.712 |
|
MOSFET (Metal Oxide) | 100V | 5.6A (Tc) | 10V | 4V @ 250µA | 18nC @ 10V | 390pF @ 25V | ±20V | - | 2.5W (Ta), 42W (Tc) | 600 mOhm @ 3.4A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Vishay Siliconix |
MOSFET P-CH 60V 5.1A DPAK
|
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Azione4.336 |
|
MOSFET (Metal Oxide) | 60V | 5.1A (Tc) | 10V | 4V @ 250µA | 12nC @ 10V | 270pF @ 25V | ±20V | - | 2.5W (Ta), 25W (Tc) | 500 mOhm @ 3.1A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Infineon Technologies |
MOSFET N CH 75V 87A I-PAK
|
pacchetto: TO-251-3 Short Leads, IPak, TO-251AA |
Azione6.928 |
|
MOSFET (Metal Oxide) | 75V | 87A (Tc) | 6V, 10V | 3.7V @ 100µA | 126nC @ 10V | 4430pF @ 25V | ±20V | - | 140W (Tc) | 7.2 mOhm @ 52A, 10V | -55°C ~ 175°C (TJ) | Through Hole | IPAK (TO-251) | TO-251-3 Short Leads, IPak, TO-251AA |
||
Infineon Technologies |
MOSFET N CH 25V 28A S3
|
pacchetto: DirectFET? Isometric S3C |
Azione57.600 |
|
MOSFET (Metal Oxide) | 25V | 28A (Ta), 125A (Tc) | 4.5V, 10V | 2.1V @ 50µA | 25nC @ 4.5V | 2510pF @ 13V | ±16V | - | 2.1W (Ta), 42W (Tc) | 1.7 mOhm @ 28A, 10V | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET? S3C | DirectFET? Isometric S3C |
||
Vishay Siliconix |
MOSFET N-CH 40V 50A 10-POLARPAK
|
pacchetto: 10-PolarPAK? (S) |
Azione6.976 |
|
MOSFET (Metal Oxide) | 40V | 50A (Tc) | 4.5V, 10V | 3V @ 250µA | 77nC @ 10V | 3800pF @ 20V | ±20V | - | 5.2W (Ta), 104W (Tc) | 5.5 mOhm @ 14A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 10-PolarPAK? (S) | 10-PolarPAK? (S) |
||
Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 650V 8A TO220F
|
pacchetto: TO-220-3 Full Pack |
Azione60.252 |
|
MOSFET (Metal Oxide) | 650V | 8A (Tc) | 10V | 4.5V @ 250µA | 28nC @ 10V | 1400pF @ 25V | ±30V | - | 50W (Tc) | 1.15 Ohm @ 4A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3F | TO-220-3 Full Pack |
||
STMicroelectronics |
MOSFET N-CH 950V 10A TO-247
|
pacchetto: TO-247-3 |
Azione396.564 |
|
MOSFET (Metal Oxide) | 950V | 10A (Tc) | 10V | 5V @ 100µA | 51nC @ 10V | 1620pF @ 100V | ±30V | - | 190W (Tc) | 850 mOhm @ 5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
||
TSC America Inc. |
MOSFET, SINGLE, N-CHANNEL, PLANA
|
pacchetto: TO-220-3 Full Pack, Isolated Tab |
Azione3.440 |
|
MOSFET (Metal Oxide) | 650V | 7A (Tc) | 10V | 4V @ 250µA | 27.8nC @ 10V | 1406pF @ 25V | ±30V | - | 40W (Tc) | 1.45 Ohm @ 3A, 10V | -55°C ~ 150°C (TJ) | Through Hole | ITO-220 | TO-220-3 Full Pack, Isolated Tab |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 0.1A SSM
|
pacchetto: SC-70, SOT-323 |
Azione2.720 |
|
MOSFET (Metal Oxide) | 30V | 100mA (Ta) | 2.5V, 4V | 1.5V @ 100µA | - | 13.5pF @ 3V | ±20V | - | 150mW (Ta) | 3.6 Ohm @ 10mA, 4V | 150°C (TJ) | Surface Mount | USM | SC-70, SOT-323 |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 30V 60A TO-263AB
|
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Azione827.136 |
|
MOSFET (Metal Oxide) | 30V | 60A (Ta) | 4.5V, 10V | 3V @ 250µA | 24nC @ 5V | 1760pF @ 15V | ±20V | - | 60W (Tc) | 9 mOhm @ 30A, 10V | -65°C ~ 175°C (TJ) | Surface Mount | D2PAK (TO-263AB) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Infineon Technologies |
MOSFET N-CH 600V 4.4A TO252
|
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Azione6.560 |
|
MOSFET (Metal Oxide) | 600V | 4.4A (Tc) | 10V | 3.5V @ 130µA | 13nC @ 10V | 280pF @ 100V | ±20V | - | 37W (Tc) | 950 mOhm @ 1.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
STMicroelectronics |
MOSFET N-CH 600V 7A PWRFLAT56
|
pacchetto: 8-PowerVDFN |
Azione3.808 |
|
MOSFET (Metal Oxide) | 600V | 7A (Tc) | 10V | 4V @ 250µA | 17nC @ 10V | 580pF @ 100V | ±25V | - | 55W (Tc) | 420 mOhm @ 4.5A, 10V | 150°C (TJ) | Surface Mount | PowerFlat? (5x6) | 8-PowerVDFN |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 30V 94A DPAK
|
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Azione3.424 |
|
MOSFET (Metal Oxide) | 30V | 17A (Ta), 94A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 60nC @ 10V | 2525pF @ 15V | ±20V | - | 80W (Tc) | 5.7 mOhm @ 35A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-252AA | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Vishay Siliconix |
MOSFET P-CH 60V 36A SO8
|
pacchetto: PowerPAK? SO-8 |
Azione3.056 |
|
MOSFET (Metal Oxide) | 60V | 36A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 100nC @ 10V | 3400pF @ 25V | ±20V | - | 68W (Tc) | 25 mOhm @ 10A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PowerPAK? SO-8 | PowerPAK? SO-8 |
||
Texas Instruments |
40V N-CHANNEL NEXFET POWER MOSF
|
pacchetto: 8-PowerTDFN |
Azione21.024 |
|
MOSFET (Metal Oxide) | 40V | 50A | 4.5V, 10V | 2.4V @ 250µA | 40nC @ 10V | 2683pF @ 20V | ±20V | - | 74W (Tc) | 7.9 mOhm @ 15A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-VSONP (5x6) | 8-PowerTDFN |
||
STMicroelectronics |
MOSFET N CH 650V 22A I2PAKFP
|
pacchetto: TO-262-3 Full Pack, I2Pak |
Azione16.380 |
|
MOSFET (Metal Oxide) | 650V | 22A (Tc) | 10V | 5V @ 250µA | 45nC @ 10V | 1865pF @ 100V | ±25V | - | 30W (Tc) | 148 mOhm @ 11A, 10V | 150°C (TJ) | Through Hole | I2PAKFP (TO-281) | TO-262-3 Full Pack, I2Pak |
||
Infineon Technologies |
MOSFET N-CH 60V 7A 8-SOIC
|
pacchetto: 8-SOIC (0.154", 3.90mm Width) |
Azione109.380 |
|
MOSFET (Metal Oxide) | 60V | 7A (Ta) | 4.5V, 10V | 3V @ 250µA | 31nC @ 4.5V | 1740pF @ 25V | ±20V | - | 2.5W (Ta) | 26 mOhm @ 4.2A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
||
Infineon Technologies |
MOSFET P-CH 20V 6.9A 6TSOP
|
pacchetto: SOT-23-6 |
Azione454.224 |
|
MOSFET (Metal Oxide) | 20V | 6.9A (Ta) | 2.5V, 4.5V | 1.1V @ 10µA | 12nC @ 4.5V | 905pF @ 10V | ±12V | - | 2W (Ta) | 32 mOhm @ 6.9A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSOP | SOT-23-6 |
||
Infineon Technologies |
MOSFET N-CH 650V 46A TO247-4
|
pacchetto: TO-247-4 |
Azione18.516 |
|
MOSFET (Metal Oxide) | 650V | 46A (Tc) | 10V | 4V @ 1.25mA | 93nC @ 10V | 4340pF @ 400V | ±20V | - | 227W (Tc) | 45 mOhm @ 24.9A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247 | TO-247-4 |
||
Vishay Siliconix |
MOSFET N-CH 150V 2.2A 1212-8
|
pacchetto: PowerPAK? 1212-8 |
Azione22.170 |
|
MOSFET (Metal Oxide) | 150V | 2.2A (Ta) | 6V, 10V | 4V @ 250µA | 30nC @ 10V | - | ±20V | - | 1.5W (Ta) | 135 mOhm @ 3.4A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK? 1212-8 | PowerPAK? 1212-8 |
||
Fairchild/ON Semiconductor |
MOSFET P-CH 500V 2.7A TO-220
|
pacchetto: TO-220-3 |
Azione144.336 |
|
MOSFET (Metal Oxide) | 500V | 2.7A (Tc) | 10V | 5V @ 250µA | 23nC @ 10V | 660pF @ 25V | ±30V | - | 85W (Tc) | 4.9 Ohm @ 1.35A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 60V 200MA TO-92
|
pacchetto: TO-226-3, TO-92-3 (TO-226AA) |
Azione8.016.720 |
|
MOSFET (Metal Oxide) | 60V | 200mA (Ta) | 4.5V, 10V | 3V @ 1mA | - | 50pF @ 25V | ±20V | - | 400mW (Ta) | 5 Ohm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
||
Diodes Incorporated |
MOSFET P-CH 100V 3A DPAK
|
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Azione230.388 |
|
MOSFET (Metal Oxide) | 100V | 3A (Ta) | 6V, 10V | 4V @ 250µA | 16.5nC @ 10V | 717pF @ 50V | ±20V | - | 2.15W (Ta) | 235 mOhm @ 2.1A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Diodes Incorporated |
MOSFET N-CH 20V 1A SOT323
|
pacchetto: SC-70, SOT-323 |
Azione2.261.568 |
|
MOSFET (Metal Oxide) | 20V | 1A (Ta) | 1.8V, 4.5V | 1V @ 250µA | 0.74nC @ 4.5V | 60.67pF @ 16V | ±6V | - | 290mW (Ta) | 450 mOhm @ 600mA, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-323 | SC-70, SOT-323 |