Immagine |
Numero di parte |
Produttore |
Descrizione |
pacchetto |
Azione |
Quantità |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
MOSFET N-CH 55V 26A DPAK
|
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Azione190.680 |
|
MOSFET (Metal Oxide) | 55V | 26A (Tc) | 4.5V, 10V | 1V @ 250µA | 42nC @ 10V | 740pF @ 50V | ±20V | - | 79W (Tc) | 50 mOhm @ 4.7A, 10V | -40°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Infineon Technologies |
MOSFET N-CH 230V 56A TO-220AB
|
pacchetto: TO-220-3 |
Azione15.456 |
|
MOSFET (Metal Oxide) | 230V | 56A (Tc) | 10V | 5V @ 250µA | 170nC @ 10V | 5510pF @ 25V | ±30V | - | 370W (Tc) | 37 mOhm @ 28A, 10V | -40°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Infineon Technologies |
MOSFET N-CH 300V 1.6A 8-SOIC
|
pacchetto: 8-SOIC (0.154", 3.90mm Width) |
Azione18.276 |
|
MOSFET (Metal Oxide) | 300V | 1.6A (Ta) | 10V | 5V @ 250µA | 33nC @ 10V | 730pF @ 25V | ±30V | - | 2.5W (Ta) | 400 mOhm @ 960mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
||
Microsemi Corporation |
MOSFET N-CH 500V SMD1
|
pacchetto: TO-267AB |
Azione6.480 |
|
MOSFET (Metal Oxide) | 500V | 12A (Tc) | 10V | 4V @ 250µA | 120nC @ 10V | - | ±20V | - | 4W (Ta), 150W (Tc) | 415 mOhm @ 8A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-267AB | TO-267AB |
||
Renesas Electronics America |
MOSFET N-CH 40V 180A TO-263-7
|
pacchetto: TO-263-7, D2Pak (6 Leads + Tab) |
Azione3.504 |
|
MOSFET (Metal Oxide) | 40V | 180A (Tc) | 10V | 4V @ 250µA | 390nC @ 10V | 25700pF @ 25V | ±20V | - | 1.8W (Ta), 288W (Tc) | 1.5 mOhm @ 90A, 10V | 175°C (TJ) | Surface Mount | TO-263-7 | TO-263-7, D2Pak (6 Leads + Tab) |
||
STMicroelectronics |
MOSFET N-CH 700V 7.5A D2PAK
|
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Azione180.900 |
|
MOSFET (Metal Oxide) | 700V | 7.5A (Tc) | 10V | 4.5V @ 100µA | 68nC @ 10V | 1370pF @ 25V | ±30V | - | 115W (Tc) | 1.2 Ohm @ 4A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
STMicroelectronics |
MOSFET P-CH 20V 2.5A 8-SOIC
|
pacchetto: 8-SOIC (0.154", 3.90mm Width) |
Azione176.196 |
|
MOSFET (Metal Oxide) | 20V | 2.5A (Tc) | 2.7V, 4.5V | 600mV @ 250µA | 4.7nC @ 4.5V | 315pF @ 15V | ±12V | Schottky Diode (Isolated) | 2W (Tc) | 200 mOhm @ 1A, 4.5V | 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
||
Infineon Technologies |
MOSFET N-CH 100V 8.7A DPAK
|
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Azione2.496 |
|
MOSFET (Metal Oxide) | 100V | 8.7A (Tc) | 10V | 4V @ 25µA | 10nC @ 10V | 310pF @ 25V | ±20V | - | 35W (Tc) | 190 mOhm @ 5.2A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 500V 22A TO-3P
|
pacchetto: TO-3P-3, SC-65-3 |
Azione6.896 |
|
MOSFET (Metal Oxide) | 500V | 22A (Tc) | 10V | 5V @ 250µA | 59.5nC @ 10V | 3120pF @ 25V | ±30V | - | 280W (Tc) | 230 mOhm @ 11A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-3PN | TO-3P-3, SC-65-3 |
||
ON Semiconductor |
MOSFET N-CH 40V SO8FL
|
pacchetto: 8-PowerTDFN |
Azione7.168 |
|
MOSFET (Metal Oxide) | 40V | - | 10V | 3.5V @ 250µA | 86nC @ 10V | 6100pF @ 25V | ±20V | - | 3.9W (Ta), 166W (Tc) | 0.92 mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 100V 2.3A SOT-223
|
pacchetto: TO-261-4, TO-261AA |
Azione59.916 |
|
MOSFET (Metal Oxide) | 100V | 2.3A (Tc) | 5V | 2V @ 250µA | 15nC @ 5V | 440pF @ 25V | ±20V | - | 2.7W (Tc) | 220 mOhm @ 1.15A, 5V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223-4 | TO-261-4, TO-261AA |
||
IXYS |
MOSFET N-CH 650V 2A X2 TO-220
|
pacchetto: TO-220-3 |
Azione5.152 |
|
MOSFET (Metal Oxide) | 650V | 2A (Tc) | 10V | 5V @ 250µA | 4.3nC @ 10V | 180pF @ 25V | ±30V | - | 55W (Tc) | 2.3 Ohm @ 1A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
||
IXYS |
MOSFET N-CH 500V 16A TO-220
|
pacchetto: TO-220-3 |
Azione36.792 |
|
MOSFET (Metal Oxide) | 500V | 16A (Tc) | 10V | 5.5V @ 250µA | 43nC @ 10V | 2250pF @ 25V | ±30V | - | 300W (Tc) | 400 mOhm @ 8A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Diodes Incorporated |
MOSFET N CH 650V 9A ITO-220AB
|
pacchetto: TO-220-3 Full Pack, Isolated Tab |
Azione120.504 |
|
MOSFET (Metal Oxide) | 650V | 9A (Tc) | 10V | 5V @ 250µA | 39nC @ 10V | 2310pF @ 25V | ±30V | - | 13W (Tc) | 1.3 Ohm @ 4.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | ITO-220AB | TO-220-3 Full Pack, Isolated Tab |
||
Fairchild/ON Semiconductor |
MOSFET N CH 100V 51A TO-263AB
|
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Azione2.256 |
|
MOSFET (Metal Oxide) | 100V | 51A (Tc) | 10V | 3V @ 250µA | 86nC @ 10V | 2400pF @ 25V | ±16V | - | 180W (Tc) | 26 mOhm @ 51A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK (TO-263AB) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Nexperia USA Inc. |
MOSFET P-CH 20V 5.5A 6DFN
|
pacchetto: 6-UDFN Exposed Pad |
Azione2.432 |
|
MOSFET (Metal Oxide) | 20V | 5.5A (Ta) | 1.8V, 4.5V | 900mV @ 250µA | 23nC @ 4.5V | 1575pF @ 10V | ±12V | - | 1.7W (Ta), 12.5W (Tc) | 37 mOhm @ 5.5A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 6-DFN2020MD (2x2) | 6-UDFN Exposed Pad |
||
Vishay Siliconix |
MOSFET N-CH 100V 21A PPAK SO-8
|
pacchetto: PowerPAK? SO-8 |
Azione22.908 |
|
MOSFET (Metal Oxide) | 100V | 21A (Tc) | 4.5V, 10V | 3V @ 250µA | 19.5nC @ 10V | 550pF @ 50V | ±20V | - | 4.1W (Ta), 29.7W (Tc) | 33 mOhm @ 10A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK? SO-8 | PowerPAK? SO-8 |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 150V 9A 8TSON
|
pacchetto: 8-PowerVDFN |
Azione3.760 |
|
MOSFET (Metal Oxide) | 150V | 9A (Ta) | 10V | 4V @ 200µA | 7nC @ 10V | 600pF @ 75V | ±20V | - | 700mW (Ta), 39W (Tc) | 59 mOhm @ 4.5A, 10V | 150°C (TJ) | Surface Mount | 8-TSON Advance (3.3x3.3) | 8-PowerVDFN |
||
Infineon Technologies |
MOSFET N-CH 650V 31.2A TO247
|
pacchetto: TO-247-3 |
Azione72.000 |
|
MOSFET (Metal Oxide) | 650V | 31.2A (Tc) | 10V | 4.5V @ 1.3mA | 118nC @ 10V | 3240pF @ 100V | ±20V | - | 277.8W (Tc) | 110 mOhm @ 12.7A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 6A TO220SIS
|
pacchetto: TO-220-3 Full Pack |
Azione22.194 |
|
MOSFET (Metal Oxide) | 600V | 6A (Ta) | 10V | 4V @ 1mA | 16nC @ 10V | 800pF @ 25V | ±30V | - | 40W (Tc) | 1.25 Ohm @ 3A, 10V | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
||
Rohm Semiconductor |
MOSFET P-CH 30V 14A SOP8
|
pacchetto: 8-SOIC (0.154", 3.90mm Width) |
Azione10.716 |
|
MOSFET (Metal Oxide) | 30V | 14A (Ta) | 4V, 10V | 2.5V @ 1mA | 80nC @ 5V | 8000pF @ 10V | ±20V | - | 650mW (Ta) | 7 mOhm @ 14A, 10V | 150°C (TJ) | Surface Mount | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
||
Vishay Siliconix |
EF SERIES POWER MOSFET WITH FAST
|
pacchetto: - |
Azione9.150 |
|
MOSFET (Metal Oxide) | 600 V | 13A (Tc) | 10V | 5V @ 250µA | 23 nC @ 10 V | 915 pF @ 100 V | ±30V | - | 89W (Tc) | 250mOhm @ 5.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 8 x 8 | 8-PowerTDFN |
||
STMicroelectronics |
N-channel 600 V, 85 mOhm typ.,
|
pacchetto: - |
Azione2.838 |
|
MOSFET (Metal Oxide) | 600 V | 30A (Tc) | 10V | 4.75V @ 250µA | 44.3 nC @ 10 V | 1960 pF @ 100 V | ±25V | - | 230W (Tc) | 99mOhm @ 15A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TOLL (HV) | 8-PowerSFN |
||
Nexperia USA Inc. |
PSMP032-60YE/SOT669/LFPAK
|
pacchetto: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 60 V | 38.7A | 10V | - | - | - | - | - | - | - | - | - | - | - |
||
International Rectifier |
MOSFET N-CH 40V 123A D2PAK
|
pacchetto: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 40 V | 123A (Tc) | - | 3.9V @ 100µA | 93 nC @ 10 V | 3183 pF @ 25 V | ±20V | - | 99W (Tc) | 3.3mOhm @ 70A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
||
SMC Diode Solutions |
MOSFET SILICON CARBIDE SIC 1200V
|
pacchetto: - |
Azione339 |
|
SiCFET (Silicon Carbide) | 1200 V | - | - | - | - | - | - | - | - | - | - | Through Hole | TO-247-4 | TO-247-4 |
||
Taiwan Semiconductor Corporation |
600V, 13A, SINGLE N-CHANNEL POWE
|
pacchetto: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 600 V | 13A (Tc) | 10V | 4V @ 250µA | 30 nC @ 10 V | 1273 pF @ 100 V | ±30V | - | 32.1W (Tc) | 260mOhm @ 3.9A, 10V | -55°C ~ 150°C (TJ) | Through Hole | ITO-220 | TO-220-3 Full Pack, Isolated Tab |
||
Vishay Siliconix |
N-CHANNEL 500V
|
pacchetto: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 500 V | 2.4A (Tc) | 10V | 4V @ 250µA | 19 nC @ 10 V | 360 pF @ 25 V | ±20V | - | 2.5W (Ta), 42W (Tc) | 3Ohm @ 1.4A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-252AA | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
||
MOSLEADER |
N 20V 3A SOT-23N
|
pacchetto: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Panjit International Inc. |
50V N-CHANNEL ENHANCEMENT MODE M
|
pacchetto: - |
Azione7.380 |
|
MOSFET (Metal Oxide) | 50 V | 360mA (Ta) | 1.8V, 10V | 1V @ 250µA | 0.95 nC @ 4.5 V | 36 pF @ 25 V | ±20V | - | 300mW (Ta) | 1.45Ohm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-523 | SOT-523 |