Immagine |
Numero di parte |
Produttore |
Descrizione |
pacchetto |
Azione |
Quantità |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
MOSFET N-CH 30V 7.3A 8-SOIC
|
pacchetto: 8-SOIC (0.154", 3.90mm Width) |
Azione357.780 |
|
MOSFET (Metal Oxide) | 30V | 7.3A (Tc) | 4.5V, 10V | 1V @ 250µA | 28nC @ 10V | 550pF @ 25V | ±20V | - | 2.5W (Tc) | 30 mOhm @ 7.3A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
||
Toshiba Semiconductor and Storage |
MOSFET P-CH 60V 5A PW-MOLD
|
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Azione6.096 |
|
MOSFET (Metal Oxide) | 60V | 5A (Ta) | 4V, 10V | 2V @ 1mA | 15nC @ 10V | 700pF @ 10V | ±20V | - | 20W (Tc) | 170 mOhm @ 2.5A, 10V | 150°C | Surface Mount | PW-MOLD | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
EPC |
TRANS GAN 25V BUMPED DIE
|
pacchetto: Die |
Azione4.480 |
|
GaNFET (Gallium Nitride) | 15V | 3.4A (Ta) | 5V | 2.5V @ 1mA | 0.93nC @ 5V | 100pF @ 6V | +6V, -4V | - | - | 28 mOhm @ 1.5A, 5V | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die |
||
Global Power Technologies Group |
MOSFET N-CH 600V 10A TO220
|
pacchetto: TO-220-3 |
Azione4.832 |
|
MOSFET (Metal Oxide) | 600V | 10A (Tc) | 10V | 4V @ 250µA | 36nC @ 10V | 1891pF @ 25V | ±30V | - | 198W (Tc) | 750 mOhm @ 5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
||
Global Power Technologies Group |
MOSFET N-CH 650V 1.8A TO220F
|
pacchetto: TO-220-3 Full Pack |
Azione5.760 |
|
MOSFET (Metal Oxide) | 650V | 1.8A (Tc) | 10V | 5V @ 250µA | 8.5nC @ 10V | 353pF @ 25V | ±30V | - | 17.3W (Tc) | 4.6 Ohm @ 900mA, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
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ON Semiconductor |
MOSFET N-CH 30V 9A IPAK
|
pacchetto: TO-251-3 Short Leads, IPak, TO-251AA |
Azione5.680 |
|
MOSFET (Metal Oxide) | 30V | 9.6A (Ta), 58A (Tc) | 4.5V, 11.5V | 2.5V @ 250µA | 13nC @ 4.5V | 1456pF @ 12V | ±20V | - | 1.3W (Ta), 52W (Tc) | 9 mOhm @ 30A, 10V | -55°C ~ 175°C (TJ) | Through Hole | I-Pak | TO-251-3 Short Leads, IPak, TO-251AA |
||
ON Semiconductor |
MOSFET N-CH 60V 45A D2PAK
|
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Azione450.072 |
|
MOSFET (Metal Oxide) | 60V | 45A (Ta) | 5V | 2V @ 250µA | 32nC @ 5V | 1700pF @ 25V | ±15V | - | 2.4W (Ta), 125W (Tj) | 28 mOhm @ 22.5A, 5V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Rohm Semiconductor |
MOSFET N-CH 100V 5A DPAK
|
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Azione450.012 |
|
MOSFET (Metal Oxide) | 100V | 5A (Ta) | 4V, 10V | 2.5V @ 1mA | - | 520pF @ 10V | ±20V | - | 20W (Tc) | 220 mOhm @ 2.5A, 10V | 150°C (TJ) | Surface Mount | CPT3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
ON Semiconductor |
MOSFET P-CH 30V 25A DPAK
|
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Azione2.720 |
|
MOSFET (Metal Oxide) | 30V | 25A (Ta) | 4V, 5V | 2V @ 250µA | 20nC @ 5V | 1260pF @ 25V | ±15V | - | 75W (Tj) | 80 mOhm @ 25A, 5V | -55°C ~ 150°C (TJ) | Surface Mount | DPAK-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Vishay Siliconix |
MOSFET N-CH 500V 2.4A I-PAK
|
pacchetto: TO-251-3 Short Leads, IPak, TO-251AA |
Azione147.828 |
|
MOSFET (Metal Oxide) | 500V | 2.4A (Tc) | 10V | 4V @ 250µA | 19nC @ 10V | 360pF @ 25V | ±20V | - | 2.5W (Ta), 42W (Tc) | 3 Ohm @ 1.4A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-251AA | TO-251-3 Short Leads, IPak, TO-251AA |
||
Vishay Siliconix |
MOSFET N-CH 60V 2.7A SOT223
|
pacchetto: TO-261-4, TO-261AA |
Azione663.792 |
|
MOSFET (Metal Oxide) | 60V | 2.7A (Tc) | 10V | 4V @ 250µA | 11nC @ 10V | 300pF @ 25V | ±20V | - | 2W (Ta), 3.1W (Tc) | 200 mOhm @ 1.6A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
||
Infineon Technologies |
MOSFET N-CH 650V 6.2A TO-220
|
pacchetto: TO-220-3 |
Azione4.496 |
|
MOSFET (Metal Oxide) | 650V | 6.2A (Tc) | 10V | 3.9V @ 260µA | 31nC @ 10V | 620pF @ 25V | ±20V | - | 74W (Tc) | 750 mOhm @ 3.9A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
||
Infineon Technologies |
LOW POWER_LEGACY
|
pacchetto: - |
Azione7.968 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
GeneSiC Semiconductor |
TRANS SJT 650V 4A TO-257
|
pacchetto: TO-257-3 |
Azione4.944 |
|
SiC (Silicon Carbide Junction Transistor) | 650V | 4A (Tc) (165°C) | - | - | - | 324pF @ 35V | - | - | 47W (Tc) | 415 mOhm @ 4A | -55°C ~ 225°C (TJ) | Through Hole | TO-257 | TO-257-3 |
||
IXYS |
MOSFET N-CH 1000V 24A PLUS247
|
pacchetto: TO-247-3 |
Azione3.632 |
|
MOSFET (Metal Oxide) | 1000V | 24A (Tc) | 10V | 5.5V @ 8mA | 267nC @ 10V | 8700pF @ 25V | ±20V | - | 568W (Tc) | 400 mOhm @ 12A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PLUS247?-3 | TO-247-3 |
||
Fairchild/ON Semiconductor |
MV7 80V N CH DUAL COOL POWERTREN
|
pacchetto: - |
Azione4.832 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
ON Semiconductor |
MOSFET N-CH 60V 220A TO-220-3
|
pacchetto: TO-220-3 |
Azione6.352 |
|
MOSFET (Metal Oxide) | 60V | 220A (Tc) | 10V | 4V @ 250µA | 180nC @ 10V | 10760pF @ 25V | ±20V | - | 283W (Tc) | 3 mOhm @ 75A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
ON Semiconductor |
MOSFET N-CH 50V 0.1A MCP3
|
pacchetto: SC-70, SOT-323 |
Azione1.028.880 |
|
MOSFET (Metal Oxide) | 50V | 100mA (Ta) | 4V, 10V | - | 1.4nC @ 10V | 6.2pF @ 10V | ±20V | - | 150mW (Ta) | 7.5 Ohm @ 50mA, 10V | 150°C (TJ) | Surface Mount | 3-MCP | SC-70, SOT-323 |
||
STMicroelectronics |
MOSFET N-CH 60V 50A POWERFLAT
|
pacchetto: 8-PowerVDFN |
Azione4.816 |
|
MOSFET (Metal Oxide) | 60V | 50A (Tc) | 10V | 4V @ 250µA | 17nC @ 10V | 980pF @ 25V | ±20V | - | 71W (Tc) | 14 mOhm @ 6.5A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PowerFlat? (5x6) | 8-PowerVDFN |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 30V 17.5A 8MLP
|
pacchetto: 8-PowerWDFN |
Azione233.400 |
|
MOSFET (Metal Oxide) | 30V | 17.5A (Ta), 19.5A (Tc) | 4.5V, 10V | 3V @ 250µA | 39nC @ 10V | 2410pF @ 15V | ±20V | - | 2.3W (Ta), 31W (Tc) | 5.3 mOhm @ 17.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-MLP (3.3x3.3) | 8-PowerWDFN |
||
STMicroelectronics |
MOSFET N-CH 100V 80A D2PAK
|
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Azione8.832 |
|
MOSFET (Metal Oxide) | 100V | 60A (Tc) | 10V | 4V @ 250µA | 104nC @ 10V | 4270pF @ 25V | ±20V | - | 300W (Tc) | 23 mOhm @ 40A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Texas Instruments |
MOSFET N-CH 30V 35A 8VSON
|
pacchetto: 8-PowerVDFN |
Azione21.708 |
|
MOSFET (Metal Oxide) | 30V | 20A (Ta) | 4.5V, 10V | 1.9V @ 250µA | 22.2nC @ 10V | 1590pF @ 15V | ±20V | - | 3.2W (Ta), 37W (Tc) | 7.3 mOhm @ 10A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-VSONP (3x3.15) | 8-PowerVDFN |
||
Fairchild Semiconductor |
88A, 60V, 0.0035OHM, N CHANNEL ,
|
pacchetto: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Comchip Technology |
MOSFET N-CH 30V 5.8A SOT23-3
|
pacchetto: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 30 V | 5.8A (Ta) | 2.5V, 10V | 1.4V @ 250µA | 9.5 nC @ 4.5 V | 820 pF @ 15 V | ±12V | - | 1.4W (Ta) | 41mOhm @ 5.8A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
||
IXYS |
MOSFET N-CH 1200V 800MA TO263
|
pacchetto: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 1200 V | 800mA (Tc) | 10V | 4.5V @ 50µA | 14 nC @ 10 V | 333 pF @ 25 V | ±20V | - | 50W (Tc) | 25Ohm @ 400mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 (D2PAK) | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
||
onsemi |
MOSFET N-CH 500V 10A D2PAK
|
pacchetto: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 500 V | 10A (Tc) | 10V | 4V @ 250µA | 60 nC @ 10 V | 2210 pF @ 25 V | ±30V | - | 143W (Tc) | 610mOhm @ 5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 (D2PAK) | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
||
Vishay Siliconix |
EF SERIES POWER MOSFET WITH FAST
|
pacchetto: - |
Azione2.955 |
|
MOSFET (Metal Oxide) | 600 V | 21A (Tc) | 10V | 5V @ 250µA | 38 nC @ 10 V | 1465 pF @ 100 V | ±20V | - | 179W (Tc) | 149mOhm @ 2A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
||
onsemi |
NCH 15V DRIVE SERIES
|
pacchetto: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Rohm Semiconductor |
MOSFET P-CH 45V 8A TO252
|
pacchetto: - |
Azione7.500 |
|
MOSFET (Metal Oxide) | 45 V | 8A (Ta) | 4V, 10V | 3V @ 1mA | 9 nC @ 5 V | 1000 pF @ 10 V | ±20V | - | 15W (Tc) | 91mOhm @ 8A, 10V | 150°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
||
onsemi |
MOSFET N-CH
|
pacchetto: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |