Immagine |
Numero di parte |
Produttore |
Descrizione |
pacchetto |
Azione |
Quantità |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
MOSFET N-CH 75V 100A I2PAK
|
pacchetto: TO-262-3 Long Leads, I2Pak, TO-262AA |
Azione2.864 |
|
MOSFET (Metal Oxide) | 75V | 100A (Ta) | 10V | - | - | - | ±20V | - | - | - | - | Through Hole | PG-TO262-3-1 | TO-262-3 Long Leads, I2Pak, TO-262AA |
||
Infineon Technologies |
MOSFET N-CH 55V 61A TO-262
|
pacchetto: TO-262-3 Long Leads, I2Pak, TO-262AA |
Azione21.912 |
|
MOSFET (Metal Oxide) | 55V | 61A (Tc) | 10V | 4V @ 250µA | 64nC @ 10V | 1720pF @ 25V | ±20V | - | 91W (Tc) | 11 mOhm @ 37A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I2Pak, TO-262AA |
||
Infineon Technologies |
MOSFET N-CH 20V 37A I-PAK
|
pacchetto: TO-251-3 Short Leads, IPak, TO-251AA |
Azione13.380 |
|
MOSFET (Metal Oxide) | 20V | 37A (Tc) | 4.5V, 10V | 2.55V @ 250µA | 7.1nC @ 4.5V | 560pF @ 10V | ±20V | - | 35W (Tc) | 15 mOhm @ 15A, 10V | -55°C ~ 175°C (TJ) | Through Hole | I-Pak | TO-251-3 Short Leads, IPak, TO-251AA |
||
Global Power Technologies Group |
MOSFET N-CH 500V 4.5A TO220
|
pacchetto: TO-220-3 |
Azione2.544 |
|
MOSFET (Metal Oxide) | 500V | 4.5A (Tc) | 10V | 4V @ 250µA | 11nC @ 10V | 627pF @ 25V | ±30V | - | 92.5W (Tc) | 1.65 Ohm @ 2.25A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
||
Vishay Siliconix |
MOSFET N-CH 90V 0.86A TO-205
|
pacchetto: TO-205AD, TO-39-3 Metal Can |
Azione16.020 |
|
MOSFET (Metal Oxide) | 90V | 860mA (Tc) | 5V, 10V | 2V @ 1mA | - | 50pF @ 25V | ±20V | - | 725mW (Ta), 6.25W (Tc) | 4 Ohm @ 1A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-39 | TO-205AD, TO-39-3 Metal Can |
||
Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 40V 22A DFN5X6
|
pacchetto: 8-PowerSMD, Flat Leads |
Azione144.060 |
|
MOSFET (Metal Oxide) | 40V | 22A (Ta), 32A (Tc) | 4.5V, 10V | 2.4V @ 250µA | 35nC @ 10V | 2200pF @ 20V | ±20V | - | 4.2W (Ta), 35.7W (Tc) | 4.8 mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-DFN (5x6) | 8-PowerSMD, Flat Leads |
||
Vishay Siliconix |
MOSFET N-CH 30V 8A 6TSOP
|
pacchetto: SOT-23-6 Thin, TSOT-23-6 |
Azione617.100 |
|
MOSFET (Metal Oxide) | 30V | 8A (Tc) | 4.5V, 10V | 3V @ 250µA | 19.6nC @ 10V | 735pF @ 15V | ±20V | - | 2.1W (Ta), 2.98W (Tc) | 28 mOhm @ 7A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSOP | SOT-23-6 Thin, TSOT-23-6 |
||
IXYS |
MOSFET N-CH 200V 72A TO-263
|
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Azione7.568 |
|
MOSFET (Metal Oxide) | 200V | 72A (Tc) | - | - | - | - | - | - | - | - | - | Surface Mount | TO-263 (IXTA) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 600V 2.8A DPAK
|
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Azione7.408 |
|
MOSFET (Metal Oxide) | 600V | 2.8A (Tc) | 10V | 4V @ 250µA | 19nC @ 10V | 670pF @ 25V | ±30V | - | 2.5W (Ta), 49W (Tc) | 2.5 Ohm @ 1.4A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 150V 79A TO-220F
|
pacchetto: TO-220-3 Full Pack |
Azione103.464 |
|
MOSFET (Metal Oxide) | 150V | 79A (Tc) | 10V | 5V @ 250µA | 73nC @ 10V | 3410pF @ 25V | ±30V | - | 38W (Tc) | 30 mOhm @ 39.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 100V 90A TO-220
|
pacchetto: TO-220-3 |
Azione498.636 |
|
MOSFET (Metal Oxide) | 100V | 90A (Tc) | 10V | 4V @ 250µA | 191nC @ 10V | 6150pF @ 25V | ±30V | - | 250W (Tc) | 10 mOhm @ 45A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 150V 45.6A D2PAK
|
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Azione4.736 |
|
MOSFET (Metal Oxide) | 150V | 45.6A (Tc) | 10V | 4V @ 250µA | 110nC @ 10V | 3250pF @ 25V | ±25V | - | 3.75W (Ta), 210W (Tc) | 42 mOhm @ 22.8A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK (TO-263AB) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Fairchild/ON Semiconductor |
MOSFET P-CH 30V 5.3A 8-SOIC
|
pacchetto: 8-SOIC (0.154", 3.90mm Width) |
Azione97.488 |
|
MOSFET (Metal Oxide) | 30V | 5.3A (Ta) | 4.5V, 10V | 3V @ 250µA | 23nC @ 10V | 690pF @ 15V | ±20V | - | 2.5W (Ta) | 50 mOhm @ 5.3A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
||
ON Semiconductor |
MOSFET N-CH 25V 10A IPAK
|
pacchetto: TO-251-3 Short Leads, IPak, TO-251AA |
Azione7.472 |
|
MOSFET (Metal Oxide) | 25V | 10A (Ta), 32A (Tc) | 4.5V, 10V | 2V @ 250µA | 13.2nC @ 5V | 1333pF @ 20V | ±20V | - | 1.36W (Ta), 62.5W (Tc) | 8 mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Through Hole | I-Pak | TO-251-3 Short Leads, IPak, TO-251AA |
||
Infineon Technologies |
MOSFET COOL MOS 600V
|
pacchetto: - |
Azione3.920 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Infineon Technologies |
MOSFET N-CH 60V 45A TO262-3
|
pacchetto: TO-262-3 Long Leads, I2Pak, TO-262AA |
Azione4.784 |
|
MOSFET (Metal Oxide) | 60V | 45A (Tc) | 4.5V, 10V | 2.2V @ 35µA | 64nC @ 10V | 4780pF @ 25V | ±16V | - | 71W (Tc) | 8.2 mOhm @ 45A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO262-3 | TO-262-3 Long Leads, I2Pak, TO-262AA |
||
Diodes Incorporated |
MOSFET BVDSS: 501V 650V ITO-220A
|
pacchetto: TO-220-3 Full Pack, Isolated Tab |
Azione5.152 |
|
MOSFET (Metal Oxide) | 650V | 7.7A (Tc) | 10V | 4V @ 250µA | 25.2nC @ 10V | 886pF @ 50V | ±30V | - | 28W (Tc) | 1.4 Ohm @ 2.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | ITO-220AB | TO-220-3 Full Pack, Isolated Tab |
||
ON Semiconductor |
MOSFET N-CH 60V SO8FL
|
pacchetto: 8-PowerTDFN, 5 Leads |
Azione4.672 |
|
MOSFET (Metal Oxide) | 60V | 8.8A (Ta), 25A (Tc) | 4.5V, 10V | 2V @ 16µA | 5nC @ 10V | 410pF @ 25V | ±20V | - | 3.5W (Ta), 28W (Tc) | 21 mOhm @ 10A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
||
Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 60V 16.5A 8SO
|
pacchetto: 8-SOIC (0.154", 3.90mm Width) |
Azione3.360 |
|
MOSFET (Metal Oxide) | 60V | 16.5A (Ta) | 4.5V, 10V | 2.2V @ 250µA | 25nC @ 4.5V | 1652pF @ 30V | ±20V | - | 3.1W (Ta) | 6.5 mOhm @ 16.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
||
TSC America Inc. |
MOSFET, SINGLE, N-CHANNEL, PLANA
|
pacchetto: TO-220-3 |
Azione3.312 |
|
MOSFET (Metal Oxide) | 800V | 3A (Tc) | 10V | 4V @ 250µA | 19nC @ 10V | 696pF @ 25V | ±30V | - | 94W (Tc) | 4.2 Ohm @ 1.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
||
Vishay Siliconix |
MOSFET N-CH 100V 9.2A TO-220AB
|
pacchetto: TO-220-3 |
Azione128.460 |
|
MOSFET (Metal Oxide) | 100V | 9.2A (Tc) | 10V | 4V @ 250µA | 16nC @ 10V | 360pF @ 25V | ±20V | - | 60W (Tc) | 270 mOhm @ 5.5A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Texas Instruments |
MOSFET N-CH 60V 100A 8VSON
|
pacchetto: 8-PowerTDFN |
Azione6.640 |
|
MOSFET (Metal Oxide) | 60V | 100A (Ta) | 4.5V, 10V | 2.3V @ 250µA | 53nC @ 10V | 4230pF @ 30V | ±20V | - | 3.1W (Ta), 195W (Tc) | 2.2 mOhm @ 28A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-VSON (5x6) | 8-PowerTDFN |
||
Infineon Technologies |
MOSFET N-CH 650V 1.8A IPAK
|
pacchetto: TO-251-3 Short Leads, IPak, TO-251AA |
Azione9.564 |
|
MOSFET (Metal Oxide) | 650V | 1.8A (Tc) | 10V | 3.9V @ 80µA | 12.5nC @ 10V | 200pF @ 25V | ±20V | - | 25W (Tc) | 3 Ohm @ 1.1A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO251-3 | TO-251-3 Short Leads, IPak, TO-251AA |
||
STMicroelectronics |
MOSFET N-CH 500V 7.2A TO-220
|
pacchetto: TO-220-3 |
Azione129.348 |
|
MOSFET (Metal Oxide) | 500V | 7.2A (Tc) | 10V | 4.5V @ 100µA | 32nC @ 10V | 910pF @ 25V | ±30V | - | 110W (Tc) | 850 mOhm @ 3.6A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Infineon Technologies |
MOSFET N-CH 40V 100A PQFN5X6
|
pacchetto: 8-PowerVDFN |
Azione7.136 |
|
MOSFET (Metal Oxide) | 40V | 100A (Tc) | 6V, 10V | 3.7V @ 150µA | 152nC @ 10V | 5406pF @ 25V | ±20V | - | 125W (Tc) | 1.7 mOhm @ 100A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (5x6) | 8-PowerVDFN |
||
Infineon Technologies |
MOSFET N-CH 60V 40A 8TSDSON
|
pacchetto: 8-PowerTDFN |
Azione4.944 |
|
MOSFET (Metal Oxide) | 60V | 40A (Tc) | 6V, 10V | 3.3V @ 20µA | 21nC @ 10V | 1500pF @ 30V | ±20V | - | 2.1W (Ta), 46W (Tc) | 6.8 mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TSDSON-8-FL | 8-PowerTDFN |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 650V 17.3A TO-220AB
|
pacchetto: TO-220-3 |
Azione8.172 |
|
MOSFET (Metal Oxide) | 650V | 17.3A (Ta) | 10V | 3.5V @ 900µA | 45nC @ 10V | 1800pF @ 300V | ±30V | - | 165W (Tc) | 200 mOhm @ 8.7A, 10V | 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 55V 20A DPAK
|
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Azione60.000 |
|
MOSFET (Metal Oxide) | 55V | 20A (Tc) | 10V | 4V @ 250µA | 65nC @ 20V | 1060pF @ 25V | ±20V | - | 128W (Tc) | 26 mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-252AA | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Vishay Siliconix |
MOSFET N-CH 80V 57A SO8
|
pacchetto: PowerPAK? SO-8 |
Azione26.556 |
|
MOSFET (Metal Oxide) | 80V | 57A (Tc) | 10V | 3.5V @ 250µA | 45nC @ 10V | 2650pF @ 25V | ±20V | - | 68W (Tc) | 9.5 mOhm @ 10A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PowerPAK? SO-8 | PowerPAK? SO-8 |
||
Fairchild/ON Semiconductor |
MOSFET P-CH 20V 2.6A SC70-6
|
pacchetto: 6-TSSOP, SC-88, SOT-363 |
Azione567.720 |
|
MOSFET (Metal Oxide) | 20V | 2.6A (Ta) | 1.8V, 4.5V | 1.5V @ 250µA | 10.8nC @ 4.5V | 560pF @ 10V | ±8V | - | 750mW (Ta) | 95 mOhm @ 2.6A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | SC-70-6 | 6-TSSOP, SC-88, SOT-363 |