Immagine |
Numero di parte |
Produttore |
Descrizione |
pacchetto |
Azione |
Quantità |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
MOSFET N-CH 100V 48A I-PAK
|
pacchetto: TO-251-3 Short Leads, IPak, TO-251AA |
Azione4.864 |
|
MOSFET (Metal Oxide) | 100V | 48A (Tc) | 10V | 5.5V @ 250µA | 89nC @ 10V | 3430pF @ 25V | ±20V | - | 140W (Tc) | 25 mOhm @ 29A, 10V | -55°C ~ 175°C (TJ) | Through Hole | IPAK (TO-251) | TO-251-3 Short Leads, IPak, TO-251AA |
||
Infineon Technologies |
MOSFET N-CH 100V 36A TO-262
|
pacchetto: TO-262-3 Long Leads, I2Pak, TO-262AA |
Azione2.736 |
|
MOSFET (Metal Oxide) | 100V | 36A (Tc) | 10V | 4V @ 250µA | 63nC @ 10V | 1770pF @ 25V | ±20V | - | 92W (Tc) | 26.5 mOhm @ 22A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I2Pak, TO-262AA |
||
Infineon Technologies |
MOSFET N-CH 55V 30A DPAK
|
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Azione5.008 |
|
MOSFET (Metal Oxide) | 55V | 30A (Tc) | 10V | 4V @ 250µA | 27nC @ 10V | 740pF @ 25V | ±20V | - | 48W (Tc) | 24.5 mOhm @ 18A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Alpha & Omega Semiconductor Inc. |
MOSFET P-CH 20V 0.7A 3DFN
|
pacchetto: 3-UFDFN |
Azione7.648 |
|
MOSFET (Metal Oxide) | 20V | 700mA (Ta) | 1.5V, 4.5V | 1.1V @ 250µA | 750nC @ 4.5V | 50pF @ 10V | ±8V | - | 900mW (Ta) | 710 mOhm @ 400mA, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 3-DFN (1.0 x 0.60) | 3-UFDFN |
||
Microsemi Corporation |
MOSFET N-CH 500V 12A TO-204AE
|
pacchetto: TO-204AE |
Azione3.920 |
|
MOSFET (Metal Oxide) | 500V | 12A (Tc) | 10V | 4V @ 250µA | 120nC @ 10V | - | ±20V | - | 4W (Ta), 150W (Tc) | 500 mOhm @ 12A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-3 | TO-204AE |
||
Microsemi Corporation |
MOSFET N-CH TO-205AF TO-39
|
pacchetto: TO-205AF Metal Can |
Azione5.664 |
|
MOSFET (Metal Oxide) | 500V | 2.5A (Tc) | 10V | 4V @ 250µA | 33nC @ 10V | - | ±20V | - | 800mW (Ta), 25W (Tc) | 1.6 Ohm @ 2.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-39 | TO-205AF Metal Can |
||
ON Semiconductor |
MOSFET P-CH 20V 3.5A 6-WDFN
|
pacchetto: 6-WDFN Exposed Pad |
Azione3.552 |
|
MOSFET (Metal Oxide) | 20V | 3.5A (Ta) | 1.5V, 4.5V | 1V @ 250µA | 19.5nC @ 4.5V | 1100pF @ 16V | ±8V | - | 700mW (Ta) | 38 mOhm @ 3A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 6-WDFN (2x2) | 6-WDFN Exposed Pad |
||
IXYS |
MOSFET N-CH 75V 160A ISOPLUS220
|
pacchetto: ISOPLUS220? |
Azione2.496 |
|
MOSFET (Metal Oxide) | 75V | 160A (Tc) | 10V | 4V @ 2mA | 250nC @ 10V | - | ±20V | - | 300W (Tc) | 6.5 mOhm @ 100A, 10V | -55°C ~ 175°C (TJ) | Through Hole | ISOPLUS220? | ISOPLUS220? |
||
Diodes Incorporated |
MOSFET P-CH 50V 0.175A TO92-3
|
pacchetto: E-Line-3 |
Azione3.536 |
|
MOSFET (Metal Oxide) | 50V | 175mA (Ta) | 5V | 2V @ 1mA | - | 40pF @ 25V | ±20V | - | 625mW (Ta) | 10 Ohm @ 100mA, 5V | -55°C ~ 150°C (TJ) | Through Hole | E-Line (TO-92 compatible) | E-Line-3 |
||
ON Semiconductor |
MOSFET P-CH 60V 23A TO220AB
|
pacchetto: TO-220-3 |
Azione459.372 |
|
MOSFET (Metal Oxide) | 60V | 23A (Tc) | 10V | 4V @ 250µA | 50nC @ 10V | 1620pF @ 25V | ±15V | - | 90W (Tc) | 120 mOhm @ 11.5A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Vishay Siliconix |
MOSFET N-CH 20V 85A TO-262
|
pacchetto: TO-262-3 Long Leads, I2Pak, TO-262AA |
Azione2.912 |
|
MOSFET (Metal Oxide) | 20V | 85A (Tc) | 4.5V, 7V | 700mV @ 250µA | 78nC @ 4.5V | 3300pF @ 15V | ±10V | - | 110W (Tc) | 8 mOhm @ 51A, 7V | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 | TO-262-3 Long Leads, I2Pak, TO-262AA |
||
Infineon Technologies |
MOSFET N-CH 55V 80A TO262-3
|
pacchetto: TO-262-3 Long Leads, I2Pak, TO-262AA |
Azione3.520 |
|
MOSFET (Metal Oxide) | 55V | 80A (Tc) | 10V | 2V @ 250µA | 230nC @ 10V | 5700pF @ 25V | ±20V | - | 300W (Tc) | 4.8 mOhm @ 80A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO262-3-1 | TO-262-3 Long Leads, I2Pak, TO-262AA |
||
Diodes Incorporated |
MOSFET BVDSS: 41V 60V POWERDI506
|
pacchetto: 8-PowerTDFN |
Azione5.200 |
|
MOSFET (Metal Oxide) | 60V | 23A (Ta) | 10V | 4V @ 250µA | 95.4nC @ 10V | 4556pF @ 30V | ±20V | - | 2.5W (Ta) | 3.1 mOhm @ 50A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerDI5060-8 | 8-PowerTDFN |
||
ON Semiconductor |
MOSFET N-CH 30V 8.6A 8SOIC
|
pacchetto: 8-SOIC (0.154", 3.90mm Width) |
Azione437.460 |
|
MOSFET (Metal Oxide) | 30V | 8.6A (Ta) | 4.5V, 10V | 2.5V @ 250µA | 38.5nC @ 10V | 2563pF @ 25V | ±20V | - | 810mW (Ta) | 6.5 mOhm @ 7.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |
||
ON Semiconductor |
MOSFET N-CH 40V 110A SO8FL
|
pacchetto: 8-PowerTDFN |
Azione5.424 |
|
MOSFET (Metal Oxide) | 40V | - | 4.5V, 10V | 2V @ 250µA | 35nC @ 10V | 2100pF @ 20V | ±20V | - | 3.7W (Ta), 68W (Tc) | 2.8 mOhm @ 40A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN |
||
ON Semiconductor |
MOSFET N-CH 20V 2A MCPH3
|
pacchetto: 3-SMD, Flat Leads |
Azione6.672 |
|
MOSFET (Metal Oxide) | 20V | 2A (Ta) | 1.8V, 4.5V | 1.3V @ 1mA | 1.8nC @ 4.5V | 128pF @ 10V | ±12V | - | 800mW (Ta) | 125 mOhm @ 1A, 4.5V | 150°C (TJ) | Surface Mount | SC-70FL/MCPH3 | 3-SMD, Flat Leads |
||
Microsemi Corporation |
MOSFET N-CH 1000V 18A TO-247
|
pacchetto: TO-247-3 |
Azione3.296 |
|
MOSFET (Metal Oxide) | 1000V | 18A (Tc) | 10V | 5V @ 1mA | 150nC @ 10V | 4845pF @ 25V | ±30V | - | 625W (Tc) | 700 mOhm @ 9A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247 [B] | TO-247-3 |
||
IXYS |
MOSFET N-CH 250V 120A TO-264
|
pacchetto: TO-264-3, TO-264AA |
Azione7.392 |
|
MOSFET (Metal Oxide) | 250V | 120A (Tc) | 10V | 5V @ 500µA | 185nC @ 10V | 8000pF @ 25V | ±20V | - | 700W (Tc) | 24 mOhm @ 60A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-264 (IXTK) | TO-264-3, TO-264AA |
||
Infineon Technologies |
MOSFET N-CH 55V 51A TO-262
|
pacchetto: TO-262-3 Long Leads, I2Pak, TO-262AA |
Azione3.328 |
|
MOSFET (Metal Oxide) | 55V | 51A (Tc) | 10V | 4V @ 250µA | 43nC @ 10V | 1420pF @ 25V | ±20V | - | 80W (Tc) | 13.9 mOhm @ 31A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I2Pak, TO-262AA |
||
GeneSiC Semiconductor |
TRANS SJT 1700V 160A SOT227
|
pacchetto: SOT-227-4, miniBLOC |
Azione2.064 |
|
SiC (Silicon Carbide Junction Transistor) | 1700V | 160A | - | - | - | 14400pF @ 800V | - | - | 535W (Tc) | 10 mOhm @ 100A | -55°C ~ 175°C (TJ) | Chassis Mount | SOT-227 | SOT-227-4, miniBLOC |
||
STMicroelectronics |
MOSFET N-CH 600V 18A EP TO220AB
|
pacchetto: TO-220-3 |
Azione7.404 |
|
MOSFET (Metal Oxide) | 600V | 18A (Tc) | 10V | 4V @ 250µA | 29nC @ 10V | 1090pF @ 100V | ±25V | - | 150W (Tc) | 188 mOhm @ 9A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Vishay Siliconix |
MOSFET N-CH 500V 8.7A TO220AB
|
pacchetto: TO-220-3 |
Azione17.076 |
|
MOSFET (Metal Oxide) | 500V | 8.7A (Tc) | 10V | 5V @ 250µA | 30nC @ 10V | 527pF @ 100V | ±30V | - | 156W (Tc) | 850 mOhm @ 4A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
IXYS |
MOSFET P-CH 600V 32A PLUS247
|
pacchetto: TO-247-3 |
Azione6.204 |
|
MOSFET (Metal Oxide) | 600V | 32A (Tc) | 10V | 4V @ 1mA | 196nC @ 10V | 11100pF @ 25V | ±20V | - | 890W (Tc) | 350 mOhm @ 16A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PLUS247?-3 | TO-247-3 |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 60V 50A DPAK-3
|
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Azione4.336 |
|
MOSFET (Metal Oxide) | 60V | 21.5A (Ta), 50A (Tc) | 8V, 10V | 4V @ 250µA | 90nC @ 10V | 6340pF @ 30V | ±20V | - | 3.1W (Ta), 127W (Tc) | 4.1 mOhm @ 21.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D-PAK (TO-252AA) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Vishay Siliconix |
MOSFET P-CH 40V 2.3A SOT23-3
|
pacchetto: TO-236-3, SC-59, SOT-23-3 |
Azione686.676 |
|
MOSFET (Metal Oxide) | 40V | 2.3A (Ta) | 10V | 3V @ 250µA | 17nC @ 10V | 470pF @ 20V | ±20V | - | 750mW (Ta) | 82 mOhm @ 3A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 (TO-236) | TO-236-3, SC-59, SOT-23-3 |
||
Central Semiconductor Corp |
MOSFET P-CH 20V 0.1A SOT-883
|
pacchetto: SC-101, SOT-883 |
Azione5.616 |
|
MOSFET (Metal Oxide) | 20V | 100mA (Ta) | 1.5V, 4V | 1.1V @ 250µA | 0.66nC @ 4.5V | 45pF @ 3V | 10V | - | 100mW (Ta) | 8 Ohm @ 10mA, 4V | -65°C ~ 150°C (TJ) | Surface Mount | SOT-883 | SC-101, SOT-883 |
||
Microsemi Corporation |
MOSFET N-CH 650V 95A T-MAX
|
pacchetto: TO-247-3 Variant |
Azione9.948 |
|
MOSFET (Metal Oxide) | 650V | 95A (Tc) | 10V | 3.5V @ 3.5mA | 320nC @ 10V | 8140pF @ 25V | ±20V | Super Junction | 833W (Tc) | 35 mOhm @ 35.2A, 10V | -55°C ~ 150°C (TJ) | Through Hole | T-MAX? [B2] | TO-247-3 Variant |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 30V SYNCFET POWER56
|
pacchetto: 8-PowerTDFN |
Azione10.488 |
|
MOSFET (Metal Oxide) | 30V | 22A (Ta), 42A (Tc) | 4.5V, 10V | 3V @ 1mA | 66nC @ 10V | 4225pF @ 15V | ±20V | - | 2.5W (Ta), 65W (Tc) | 3 mOhm @ 21A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | Power56 | 8-PowerTDFN |
||
Vishay Siliconix |
MOSFET P-CH 12V 16A MICROFOOT
|
pacchetto: 6-UFBGA |
Azione75.816 |
|
MOSFET (Metal Oxide) | 12V | 16A (Tc) | 1.5V, 4.5V | 800mV @ 250µA | 65nC @ 10V | 1840pF @ 6V | ±10V | - | 2.77W (Ta), 13W (Tc) | 26 mOhm @ 1.5A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 6-Micro Foot? | 6-UFBGA |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 100V 14.5A 8-PQFN
|
pacchetto: 8-PowerTDFN |
Azione71.142 |
|
MOSFET (Metal Oxide) | 100V | 14.5A (Ta), 60A (Tc) | 6V, 10V | 4V @ 250µA | 44nC @ 10V | 3135pF @ 50V | ±20V | - | 3.2W (Ta), 125W (Tc) | 7.5 mOhm @ 14.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | Dual Cool?56 | 8-PowerTDFN |