Immagine |
Numero di parte |
Produttore |
Descrizione |
pacchetto |
Azione |
Quantità |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
MOSFET N-CH 30V 80A D2PAK
|
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Azione6.288 |
|
MOSFET (Metal Oxide) | 30V | 80A (Tc) | 4.5V, 10V | 2V @ 70µA | 40nC @ 5V | 5203pF @ 15V | ±20V | - | 107W (Tc) | 3.5 mOhm @ 55A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Microsemi Corporation |
MOSFET N-CH 500V 23A TO247AD
|
pacchetto: TO-247-3 |
Azione171.864 |
|
MOSFET (Metal Oxide) | 500V | 23A (Tc) | 10V | 4V @ 1mA | 130nC @ 10V | 2950pF @ 25V | ±30V | - | 310W (Tc) | 250 mOhm @ 11.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247AD | TO-247-3 |
||
ON Semiconductor |
MOSFET N-CH 500V 2.6A DPAK
|
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Azione26.220 |
|
MOSFET (Metal Oxide) | 500V | 2.6A (Tc) | 10V | 4.5V @ 50µA | 16nC @ 10V | 329pF @ 25V | ±30V | - | 58W (Tc) | 3.3 Ohm @ 1.15A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
ON Semiconductor |
MOSFET N-CH 30V 6.9A SO-8FL
|
pacchetto: 8-PowerTDFN, 5 Leads |
Azione6.304 |
|
MOSFET (Metal Oxide) | 30V | 6.9A (Ta), 30A (Tc) | 4.5V, 11.5V | 2.5V @ 250µA | 13nC @ 11.5V | 795pF @ 15V | ±20V | - | 860mW (Ta), 32.5W (Tc) | 10.6 mOhm @ 30A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
||
Vishay Siliconix |
MOSFET N-CH 12V 6.9A 1206-8
|
pacchetto: 8-SMD, Flat Lead |
Azione551.808 |
|
MOSFET (Metal Oxide) | 12V | 6.9A (Ta) | 2.5V, 4.5V | 600mV @ 1.2mA (Min) | 20nC @ 4.5V | - | ±8V | - | 1.3W (Ta) | 20 mOhm @ 6.9A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 1206-8 ChipFET? | 8-SMD, Flat Lead |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 30V 11.5A SSOT-8
|
pacchetto: 8-SMD, Gull Wing |
Azione55.044 |
|
MOSFET (Metal Oxide) | 30V | 11.5A (Ta) | 4.5V, 10V | 2V @ 250µA | 46nC @ 4.5V | 5070pF @ 15V | ±12V | - | 1.8W (Ta) | 9.5 mOhm @ 10.5A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | SuperSOT?-8 | 8-SMD, Gull Wing |
||
STMicroelectronics |
MOSFET N-CH 40V 120A D2PAK
|
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Azione3.568 |
|
MOSFET (Metal Oxide) | 40V | 120A (Tc) | 10V | 4V @ 250µA | 130nC @ 5V | 5800pF @ 25V | ±20V | - | 310W (Tc) | 4.3 mOhm @ 95A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Infineon Technologies |
MOSFET N-CH 200V 88A TO262-3
|
pacchetto: TO-262-3 Long Leads, I2Pak, TO-262AA |
Azione3.760 |
|
MOSFET (Metal Oxide) | 200V | 88A (Tc) | 10V | 4V @ 270µA | 87nC @ 10V | 7100pF @ 100V | ±20V | - | 300W (Tc) | 11 mOhm @ 88A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO262-3 | TO-262-3 Long Leads, I2Pak, TO-262AA |
||
ON Semiconductor |
MOSFET N-CH 60V 170A DPAK
|
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Azione7.392 |
|
MOSFET (Metal Oxide) | 60V | 170A (Ta) | 10V | 2.6V @ 1mA | 280nC @ 10V | 15800pF @ 20V | ±20V | - | 90W (Tc) | 3.3 mOhm @ 50A, 10V | 150°C (TJ) | Surface Mount | D2PAK (TO-263) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 600V 10A TO262F
|
pacchetto: TO-262-3 Long Leads, I2Pak, TO-262AA |
Azione4.080 |
|
MOSFET (Metal Oxide) | 600V | 10A (Tc) | 10V | 4.5V @ 250µA | 40nC @ 10V | 1600pF @ 25V | ±30V | - | 25W (Tc) | 750 mOhm @ 5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-262F | TO-262-3 Long Leads, I2Pak, TO-262AA |
||
Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 500V 9A TO220F
|
pacchetto: TO-220-3 Full Pack |
Azione2.480 |
|
MOSFET (Metal Oxide) | 500V | 9A (Tc) | 10V | 4.5V @ 250µA | 28nC @ 10V | 1042pF @ 25V | ±30V | - | 38.5W (Tc) | 850 mOhm @ 4.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3F | TO-220-3 Full Pack |
||
STMicroelectronics |
MOSFET P-CH 60V SOT-223
|
pacchetto: TO-261-4, TO-261AA |
Azione147.360 |
|
MOSFET (Metal Oxide) | 60V | - | 10V | 4V @ 250µA | 6.4nC @ 10V | 340pF @ 48V | ±20V | - | 2.6W (Tc) | 160 mOhm @ 1.5A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
||
Vishay Siliconix |
MOSFET N-CH 60V 57A SO-8
|
pacchetto: PowerPAK? SO-8 |
Azione22.326 |
|
MOSFET (Metal Oxide) | 60V | 57A (Tc) | 10V | 3.5V @ 250µA | 45nC @ 10V | 2800pF @ 25V | ±20V | - | 55W (Tc) | 8.7 mOhm @ 10A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PowerPAK? SO-8 | PowerPAK? SO-8 |
||
Rohm Semiconductor |
MOSFET P-CH 20V 2.4A TSST8
|
pacchetto: 8-SMD, Flat Lead |
Azione6.048 |
|
MOSFET (Metal Oxide) | 20V | 2.4A (Ta) | 1.5V, 4.5V | 1V @ 1mA | 6.7nC @ 4.5V | 850pF @ 10V | ±10V | Schottky Diode (Isolated) | 1.25W (Ta) | 105 mOhm @ 2.4A, 4.5V | 150°C (TJ) | Surface Mount | 8-TSST | 8-SMD, Flat Lead |
||
STMicroelectronics |
MOSFET N-CH 650V 17A TO-220FP
|
pacchetto: TO-220-3 Full Pack |
Azione54.960 |
|
MOSFET (Metal Oxide) | 650V | 17A (Tc) | 10V | 5V @ 250µA | 50nC @ 10V | 1950pF @ 100V | ±25V | - | 30W (Tc) | 190 mOhm @ 8.5A, 10V | 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
||
Infineon Technologies |
MOSFET N-CH 650V 11.4A TO263
|
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Azione64.986 |
|
MOSFET (Metal Oxide) | 650V | 11.4A (Tc) | 10V | 4.5V @ 400µA | 41nC @ 10V | 1100pF @ 100V | ±20V | - | 104.2W (Tc) | 310 mOhm @ 4.4A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO263 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Diodes Incorporated |
MOSFET P-CH 30V 0.25A SOT323
|
pacchetto: SC-70, SOT-323 |
Azione22.116 |
|
MOSFET (Metal Oxide) | 30V | 250mA (Ta) | 4.5V, 10V | 2.4V @ 250µA | 1.2nC @ 10V | 51.16pF @ 15V | ±20V | - | 300mW (Ta) | 2.4 Ohm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-323 | SC-70, SOT-323 |
||
onsemi |
PCH 4V DRIVE SERIES
|
pacchetto: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Diodes Incorporated |
MOSFET BVDSS: 41V~60V SOT23 T&R
|
pacchetto: - |
Azione4.308 |
|
MOSFET (Metal Oxide) | 60 V | 2A (Ta) | 4.5V, 10V | 3V @ 250µA | 12.3 nC @ 10 V | 606 pF @ 20 V | ±20V | - | 800mW (Ta) | 85mOhm @ 3.2A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
||
Alpha & Omega Semiconductor Inc. |
N
|
pacchetto: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 700 V | 7A (Tj) | 10V | 4.1V @ 250µA | 11.5 nC @ 10 V | 675 pF @ 100 V | ±20V | - | 25W (Tc) | 780mOhm @ 1.4A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
||
MOSLEADER |
N 30V 5.2A SOT-23
|
pacchetto: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
IXYS |
MOSFET N-CH 500V 15A TO263
|
pacchetto: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 500 V | 15A (Tc) | 10V | 4.5V @ 250µA | 123 nC @ 10 V | 4080 pF @ 25 V | ±20V | - | 300W (Tc) | 480mOhm @ 7.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 (D2PAK) | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
||
Vishay Siliconix |
MOSFET N-CH 600V 29A D2PAK
|
pacchetto: - |
Azione17.133 |
|
MOSFET (Metal Oxide) | 600 V | 29A (Tc) | 10V | 5V @ 250µA | 53 nC @ 10 V | 1804 pF @ 100 V | ±30V | - | 208W (Tc) | 102mOhm @ 13A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 (D2PAK) | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
||
Renesas |
2SJ358-T1-AZ - P-CHANNEL MOS FET
|
pacchetto: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 60 V | 3A (Ta) | 4V, 10V | 2V @ 1mA | 23.9 nC @ 10 V | 600 pF @ 10 V | +10V, -20V | - | 2W (Ta) | 300mOhm @ 1.5A, 10V | 150°C | Surface Mount | MP-2 | TO-243AA |
||
onsemi |
MOSFET N-CH 100V 11.7A/57.8 8DFN
|
pacchetto: - |
Azione24.180 |
|
MOSFET (Metal Oxide) | 100 V | 11.7A (Ta), 57.8 (Tc) | 4.5V, 10V | 3V @ 85µA | 30 nC @ 10 V | 2150 pF @ 50 V | ±20V | - | 3.2W (Ta), 77.8W (Tc) | 10.6mOhm @ 15A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 8-WDFN (3.3x3.3) | 8-PowerWDFN |
||
Infineon Technologies |
MOSFET N-CH 100V 14A/82A 8SWSON
|
pacchetto: - |
Azione5.433 |
|
MOSFET (Metal Oxide) | 100 V | 14A (Ta), 82A (Tc) | 6V, 10V | 3.8V @ 50µA | 38 nC @ 10 V | 2700 pF @ 50 V | ±20V | - | 3W (Ta), 100W (Tc) | 7mOhm @ 40A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-WSON-8-2 | 8-PowerWDFN |
||
Taiwan Semiconductor Corporation |
20V, 5.3A, SINGLE N-CHANNEL POWE
|
pacchetto: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 20 V | 5.3A (Tc) | 2.5V, 4.5V | 1V @ 250µA | 12.5 nC @ 4.5 V | 700 pF @ 10 V | ±12V | - | 2W (Ta) | 33mOhm @ 5.3A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-26 | SOT-23-6 |
||
Vishay Siliconix |
P-CHANNEL 30-V (D-S) MOSFET
|
pacchetto: - |
Azione17.313 |
|
MOSFET (Metal Oxide) | 30 V | 4.1A (Ta), 5.1A (Tc) | 4.5V, 10V | 3V @ 250µA | 15 nC @ 10 V | 450 pF @ 15 V | ±20V | - | 2W (Ta), 3W (Tc) | 74mOhm @ 4.1A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSOP | SOT-23-6 Thin, TSOT-23-6 |
||
Rohm Semiconductor |
MOSFET N-CH 600V 7A LPTS
|
pacchetto: - |
Azione3.240 |
|
MOSFET (Metal Oxide) | 600 V | 7A (Tc) | 15V | 7V @ 1mA | 17.5 nC @ 15 V | 475 pF @ 100 V | ±30V | - | 96W (Tc) | 780mOhm @ 3.5A, 15V | -55°C ~ 150°C (TJ) | Surface Mount | LPTS | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
||
Goford Semiconductor |
P-CH,-60V,-60A,RD(MAX)<20M@-10V,
|
pacchetto: - |
Azione5.280 |
|
MOSFET (Metal Oxide) | 60 V | 60A (Tc) | 10V | 4V @ 250µA | 62 nC @ 10 V | 4581 pF @ 30 V | ±20V | - | 115W (Tc) | 20mOhm @ 10A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPAK (2 Leads + Tab), SC-63 |