Immagine |
Numero di parte |
Produttore |
Descrizione |
pacchetto |
Azione |
Quantità |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
MOSFET N-CH 80V 26A
|
pacchetto: 8-VQFN |
Azione4.720 |
|
MOSFET (Metal Oxide) | 80V | 26A (Ta) | 10V | 3.6V @ 250µA | 74nC @ 10V | 3186pF @ 40V | ±20V | - | 4W (Ta), 195W (Tc) | 3.1 mOhm @ 50A, 10V | -55°C ~ 150°C (TJ) | - | 8-PQFN (5x6) | 8-VQFN |
||
Infineon Technologies |
MOSFET N CH 40V 14A 8-SO
|
pacchetto: 8-SOIC (0.154", 3.90mm Width) |
Azione3.376 |
|
MOSFET (Metal Oxide) | 40V | 14A (Ta) | 7V | 2V @ 250µA | 100nC @ 7V | 3520pF @ 25V | ±8V | - | 2.5W (Ta) | 10 mOhm @ 14A, 7V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
||
Microsemi Corporation |
POWER MOSFET - SIC
|
pacchetto: TO-247-3 |
Azione7.344 |
|
SiCFET (Silicon Carbide) | 1200V | 25A (Tc) | 20V | 2.5V @ 1mA | 72nC @ 20V | - | +25V, -10V | - | 175W (Tc) | 175 mOhm @ 10A, 20V | -55°C ~ 175°C (TJ) | Through Hole | TO-247 | TO-247-3 |
||
ON Semiconductor |
MOSFET N-CH 35V 6A CPH6
|
pacchetto: SOT-23-6 Thin, TSOT-23-6 |
Azione2.288 |
|
- | - | - | - | - | - | - | - | - | - | - | 150°C (TJ) | Surface Mount | 6-CPH | SOT-23-6 Thin, TSOT-23-6 |
||
Renesas Electronics America |
MOSFET N-CH 250V 1A TO-92
|
pacchetto: TO-226-3, TO-92-3 Long Body |
Azione2.688 |
|
MOSFET (Metal Oxide) | 250V | 1A (Ta) | 2.5V, 4V | - | 5.5nC @ 4V | 140pF @ 25V | ±10V | - | 900mW (Ta) | 2.6 Ohm @ 500mA, 4V | 150°C (TJ) | Through Hole | TO-92MOD | TO-226-3, TO-92-3 Long Body |
||
NXP |
MOSFET N-CH 100V 120A TO220AB
|
pacchetto: TO-220-3 |
Azione4.096 |
|
MOSFET (Metal Oxide) | 100V | 120A (Tc) | 5V, 10V | 2.1V @ 1mA | 133nC @ 5V | 17460pF @ 25V | ±10V | - | 349W (Tc) | 5.9 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
NXP |
MOSFET N-CH 60V 120A TO220AB
|
pacchetto: TO-220-3 |
Azione5.408 |
|
MOSFET (Metal Oxide) | 60V | 120A (Tc) | 5V, 10V | 2.1V @ 1mA | 120nC @ 5V | 17450pF @ 25V | ±10V | - | 349W (Tc) | 2.6 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Vishay Siliconix |
MOSFET N-CH 30V 2.7A SOT363
|
pacchetto: 6-TSSOP, SC-88, SOT-363 |
Azione72.000 |
|
MOSFET (Metal Oxide) | 30V | 2.7A (Ta) | 2.5V, 4.5V | 1.6V @ 250µA | 4.5nC @ 4.5V | - | ±12V | - | 950mW (Ta) | 77 mOhm @ 3A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | SC-70-6 (SOT-363) | 6-TSSOP, SC-88, SOT-363 |
||
ON Semiconductor |
MOSFET N-CH 60V 500MA SOT-23
|
pacchetto: TO-236-3, SC-59, SOT-23-3 |
Azione49.140 |
|
MOSFET (Metal Oxide) | 60V | 500mA (Ta) | 10V | 3V @ 1mA | - | 60pF @ 10V | ±20V | - | 225mW (Ta) | 5 Ohm @ 200mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 (TO-236) | TO-236-3, SC-59, SOT-23-3 |
||
Microsemi Corporation |
MOSFET N-CH 400V 93A SOT-227
|
pacchetto: SOT-227-4, miniBLOC |
Azione5.152 |
|
MOSFET (Metal Oxide) | 400V | 93A | 10V | 4V @ 5mA | 1065nC @ 10V | 20160pF @ 25V | ±30V | - | 700W (Tc) | 35 mOhm @ 46.5A, 10V | -55°C ~ 150°C (TJ) | Chassis Mount | ISOTOP? | SOT-227-4, miniBLOC |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 600V 20A TO-247
|
pacchetto: TO-247-3 |
Azione160.740 |
|
MOSFET (Metal Oxide) | 600V | 20A (Tc) | 10V | 5V @ 250µA | 98nC @ 10V | 3080pF @ 25V | ±30V | - | 208W (Tc) | 190 mOhm @ 10A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
||
Vishay Siliconix |
MOSFET N-CH 100V 41A TO-247AC
|
pacchetto: TO-247-3 |
Azione10.632 |
|
MOSFET (Metal Oxide) | 100V | 41A (Tc) | 10V | 4V @ 250µA | 140nC @ 10V | 2800pF @ 25V | ±20V | - | 230W (Tc) | 55 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
||
STMicroelectronics |
MOSFET N-CH 150V 40A D2PAK
|
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Azione18.060 |
|
MOSFET (Metal Oxide) | 150V | 40A (Tc) | 10V | 4V @ 250µA | 110nC @ 10V | 2420pF @ 25V | ±20V | - | 300W (Tc) | 52 mOhm @ 20A, 10V | -65°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
STMicroelectronics |
MOSFET N-CH 500V 15A TO-220FP
|
pacchetto: TO-220-3 Full Pack |
Azione29.436 |
|
MOSFET (Metal Oxide) | 500V | 15A (Tc) | 10V | 4V @ 250µA | 38nC @ 10V | 1200pF @ 50V | ±25V | - | 30W (Tc) | 260 mOhm @ 7.5A, 10V | 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
||
Infineon Technologies |
MOSFET N-CH 650V 20.2A TO263
|
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Azione3.104 |
|
MOSFET (Metal Oxide) | 650V | 20.2A (Tc) | 10V | 3.5V @ 730µA | 73nC @ 10V | 1620pF @ 100V | ±20V | - | 151W (Tc) | 190 mOhm @ 7.3A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO263 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Infineon Technologies |
MOSFET N-CH 80V 38A DPAK
|
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Azione4.368 |
|
MOSFET (Metal Oxide) | 80V | 38A (Tc) | 10V | 4V @ 250µA | 56nC @ 10V | 1710pF @ 25V | ±20V | - | 110W (Tc) | 29 mOhm @ 18A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Infineon Technologies |
MOSFET N-CH 600V 7.3A TO252
|
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Azione6.688 |
|
MOSFET (Metal Oxide) | 600V | 7.3A (Tc) | 10V | 3.5V @ 200µA | 20.5nC @ 10V | 440pF @ 100V | ±20V | - | 63W (Tc) | 600 mOhm @ 2.4A, 10V | - | Surface Mount | TO-252 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Vishay Siliconix |
MOSFET N-CH 650V 24A TO220AB
|
pacchetto: TO-220-3 |
Azione2.160 |
|
MOSFET (Metal Oxide) | 650V | 24A (Tc) | 10V | 4V @ 250µA | 122nC @ 10V | 2656pF @ 100V | ±20V | - | 250W (Tc) | 156 mOhm @ 12A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Vishay Siliconix |
MOSFET P-CH 60V 5.3A TO220FP
|
pacchetto: TO-220-3 Full Pack, Isolated Tab |
Azione29.100 |
|
MOSFET (Metal Oxide) | 60V | 5.3A (Tc) | 10V | 4V @ 250µA | 12nC @ 10V | 270pF @ 25V | ±20V | - | 27W (Tc) | 500 mOhm @ 3.2A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 Full Pack, Isolated Tab |
||
Renesas Electronics America |
MOSFET P-CH 30V 21A 8HWSON
|
pacchetto: 8-PowerWDFN |
Azione3.328 |
|
MOSFET (Metal Oxide) | 30V | 21A (Tc) | 4.5V, 10V | - | 47nC @ 10V | 1760pF @ 10V | ±20V | - | 1.5W (Ta) | 11 mOhm @ 21A, 10V | 150°C (TJ) | Surface Mount | 8-HWSON (3.3x3.3) | 8-PowerWDFN |
||
Sanken |
MOSFET N-CH 60V 25A TO-252
|
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Azione3.504 |
|
MOSFET (Metal Oxide) | 60V | 25A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 16nC @ 10V | 1050pF @ 25V | ±20V | - | 32W (Tc) | 21.2 mOhm @ 12.5A, 10V | 150°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
TSC America Inc. |
MOSFET, SINGLE, N-CHANNEL, TRENC
|
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Azione5.120 |
|
MOSFET (Metal Oxide) | 30V | 12.5A (Tc) | 4.5V, 10V | 3V @ 250µA | 7nC @ 4.5V | 270pF @ 25V | ±20V | - | 12.5W (Tc) | 50 mOhm @ 8A, 10V | 150°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Toshiba Semiconductor and Storage |
MOSFET N CH 600V 61.8A TO-3P(N)
|
pacchetto: TO-3P-3, SC-65-3 |
Azione4.848 |
|
MOSFET (Metal Oxide) | 600V | 61.8A (Ta) | 10V | 3.7V @ 3.1mA | 180nC @ 10V | 6500pF @ 300V | ±30V | Super Junction | 400W (Tc) | 38 mOhm @ 30.9A, 10V | 150°C (TJ) | Through Hole | TO-3P(N) | TO-3P-3, SC-65-3 |
||
IXYS |
MOSFET N-CH 800V 7A TO-247AD
|
pacchetto: TO-247-3 |
Azione5.360 |
|
MOSFET (Metal Oxide) | 800V | 7A (Tc) | 10V | 4.5V @ 2.5mA | 130nC @ 10V | 2800pF @ 25V | ±20V | - | 180W (Tc) | 1.4 Ohm @ 3.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247AD (IXFH) | TO-247-3 |
||
Rohm Semiconductor |
MOSFET P-CH 12V 2A TUMT3
|
pacchetto: 3-SMD, Flat Leads |
Azione542.364 |
|
MOSFET (Metal Oxide) | 12V | 2A (Ta) | 1.5V, 4.5V | 1V @ 1mA | 6.5nC @ 4.5V | 770pF @ 6V | ±10V | - | 800mW (Ta) | 105 mOhm @ 2A, 4.5V | 150°C (TJ) | Surface Mount | TUMT3 | 3-SMD, Flat Leads |
||
IXYS |
MOSFET NCH 850V 40A TO268HV
|
pacchetto: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA |
Azione6.128 |
|
MOSFET (Metal Oxide) | 850V | 40A (Tc) | 10V | 5.5V @ 4mA | 98nC @ 10V | 3700pF @ 25V | ±30V | - | 860W (Tc) | 145 mOhm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-268 | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA |
||
Nexperia USA Inc. |
MOSFET N-CH 25V 100A LFPAK
|
pacchetto: SC-100, SOT-669 |
Azione45.144 |
|
MOSFET (Metal Oxide) | 25V | 100A (Tc) | 4.5V, 10V | 1.95V @ 1mA | 33nC @ 10V | 2083pF @ 12V | ±20V | - | 92W (Tc) | 3.15 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
||
Infineon Technologies |
MOSFET N-CH 30V 27A PQFN5X6
|
pacchetto: 8-PowerTDFN |
Azione28.812 |
|
MOSFET (Metal Oxide) | 30V | 27A (Ta), 50A (Tc) | 4.5V, 10V | 2.2V @ 50µA | 59nC @ 10V | 3610pF @ 10V | ±20V | - | 3.6W (Ta), 59W (Tc) | 2.95 mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (5x6) | 8-PowerTDFN |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 75V 120A TO-3P
|
pacchetto: TO-3P-3, SC-65-3 |
Azione16.218 |
|
MOSFET (Metal Oxide) | 75V | 120A (Tc) | 10V | 4.5V @ 250µA | 220nC @ 10V | 15160pF @ 25V | ±20V | - | 375W (Tc) | 3.2 mOhm @ 75A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-3PN | TO-3P-3, SC-65-3 |
||
Vishay Siliconix |
MOSFET P-CH 60V 55A D2PAK
|
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Azione236.628 |
|
MOSFET (Metal Oxide) | 60V | 55A (Tc) | 4.5V, 10V | 3V @ 250µA | 115nC @ 10V | 3500pF @ 25V | ±20V | - | 3.75W (Ta), 125W (Tc) | 19 mOhm @ 30A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (D2Pak) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |