Immagine |
Numero di parte |
Produttore |
Descrizione |
pacchetto |
Azione |
Quantità |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 40V 7A 8SOIC
|
pacchetto: 8-SOIC (0.154", 3.90mm Width) |
Azione2.352 |
|
MOSFET (Metal Oxide) | 40V | 7A (Ta) | 4.5V, 10V | 3V @ 250µA | 13nC @ 10V | 516pF @ 20V | ±20V | - | 3.1W (Ta) | 30 mOhm @ 7A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
||
ON Semiconductor |
MOSFET N-CH 30V 10.3A SGL DPAK
|
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Azione658.920 |
|
MOSFET (Metal Oxide) | 30V | 10.3A (Ta), 54A (Tc) | 4.5V, 10V | 2.2V @ 250µA | 24nC @ 10V | 1932pF @ 15V | ±20V | - | 1.38W (Ta), 37.5W (Tc) | 5.5 mOhm @ 30A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
ON Semiconductor |
MOSFET N-CH 600V 1.5A TP
|
pacchetto: TO-251-3 Short Leads, IPak, TO-251AA |
Azione4.544 |
|
MOSFET (Metal Oxide) | 600V | 1.5A (Ta) | 10V | - | 6.3nC @ 10V | 130pF @ 30V | ±30V | - | 1W (Ta), 20W (Tc) | 8.1 Ohm @ 800mA, 10V | 150°C (TJ) | Through Hole | TP | TO-251-3 Short Leads, IPak, TO-251AA |
||
ON Semiconductor |
MOSFET N-CH 75V 100A SMP
|
pacchetto: TO-220-3, Short Tab |
Azione3.920 |
|
MOSFET (Metal Oxide) | 75V | 100A (Ta) | 4V, 10V | - | 220nC @ 10V | 12200pF @ 20V | ±20V | - | 1.65W (Ta), 90W (Tc) | 6 mOhm @ 50A, 10V | 150°C (TJ) | Through Hole | SMP | TO-220-3, Short Tab |
||
Microsemi Corporation |
MOSFET N-CH 1200V 3.5A TO-220
|
pacchetto: TO-220-3 |
Azione2.032 |
|
MOSFET (Metal Oxide) | 1200V | 3.5A (Tc) | 10V | 5V @ 1mA | 31nC @ 10V | 715pF @ 25V | ±30V | - | 135W (Tc) | 4.7 Ohm @ 1.75A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220 [K] | TO-220-3 |
||
NXP |
MOSFET N-CH 200V 5.2A TO220F
|
pacchetto: TO-220-3 Full Pack, Isolated Tab |
Azione5.280 |
|
MOSFET (Metal Oxide) | 200V | 5.2A (Tc) | 10V | 4V @ 1mA | 24nC @ 10V | 959pF @ 25V | ±20V | - | 25W (Tc) | 400 mOhm @ 4.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 Full Pack, Isolated Tab |
||
NXP |
MOSFET N-CH 25V 75A D2PAK
|
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Azione4.512 |
|
MOSFET (Metal Oxide) | 25V | 75A (Tc) | 5V, 10V | 2V @ 1mA | 16.3nC @ 4.5V | 1375pF @ 12V | ±20V | - | 187W (Tc) | 6 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 55V 75A D2PAK
|
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Azione5.456 |
|
MOSFET (Metal Oxide) | 55V | 75A (Tc) | 10V | 4V @ 250µA | 205nC @ 20V | 3000pF @ 25V | ±20V | - | 270W (Tc) | 9 mOhm @ 75A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK (TO-263AB) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
ON Semiconductor |
MOSFET N-CH 24V 30A DPAK
|
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Azione4.960 |
|
MOSFET (Metal Oxide) | 24V | 30A (Ta) | 4.5V, 10V | 3V @ 250µA | 20nC @ 4.5V | 1000pF @ 20V | ±20V | - | 75W (Tj) | 14.5 mOhm @ 30A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | DPAK-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
ON Semiconductor |
MOSFET P-CH 60V 12A TO-220AB
|
pacchetto: TO-220-3 |
Azione153.984 |
|
MOSFET (Metal Oxide) | 60V | 12A (Tc) | 10V | 4V @ 250µA | 30nC @ 10V | 770pF @ 25V | ±15V | - | 60W (Tc) | 230 mOhm @ 6A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Diodes Incorporated |
MOSFET P-CH 50V 175MA TO92-3
|
pacchetto: TO-226-3, TO-92-3 (TO-226AA) |
Azione225.540 |
|
MOSFET (Metal Oxide) | 50V | 175mA (Ta) | 5V | 2V @ 1mA | - | 40pF @ 25V | ±20V | - | 625mW (Ta) | 10 Ohm @ 100mA, 5V | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
||
EPC |
TRANS GAN 100V 2.5A BUMPED DIE
|
pacchetto: Die |
Azione2.912 |
|
GaNFET (Gallium Nitride) | 100V | 2.5A (Ta) | 5V | 2.5V @ 250µA | 0.32nC @ 5V | 38pF @ 50V | +6V, -5V | - | - | 300 mOhm @ 500mA, 5V | -40°C ~ 125°C (TJ) | Surface Mount | Die | Die |
||
Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 60V 11A TO263
|
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Azione5.808 |
|
MOSFET (Metal Oxide) | 60V | 11A (Ta), 140A (Tc) | 10V | 3.7V @ 250µA | 84nC @ 10V | 3690pF @ 25V | ±20V | - | 2.1W (Ta), 333W (Tc) | 7.3 mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (D2Pak) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
ON Semiconductor |
MOSFET N-CH 40V 126A SO8FL
|
pacchetto: 8-PowerTDFN |
Azione5.632 |
|
MOSFET (Metal Oxide) | 40V | 28A (Ta), 130A (Tc) | 4.5V, 10V | 2V @ 250µA | 50nC @ 10V | 3100pF @ 25V | ±20V | - | 3.7W (Ta), 83W (Tc) | 2.5 mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN |
||
Nexperia USA Inc. |
MOSFET N-CH 30V 75A DPAK
|
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Azione2.512 |
|
MOSFET (Metal Oxide) | 30V | 75A (Tc) | 5V, 10V | 2.5V @ 1mA | 13.2nC @ 5V | 1220pF @ 25V | ±20V | - | 120W (Tc) | 10 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
ON Semiconductor |
MOSFET N-CH 30V SO8FL
|
pacchetto: 8-PowerTDFN, 5 Leads |
Azione5.600 |
|
MOSFET (Metal Oxide) | 30V | 16.4A (Ta), 52A (Tc) | 4.5V, 10V | 2.1V @ 250µA | 22.2nC @ 10V | 1252pF @ 15V | ±20V | - | 2.51W (Ta), 25.5W (Tc) | 4.73 mOhm @ 30A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
||
Diodes Incorporated |
MOSFET 100V 108A TO220AB
|
pacchetto: TO-220-3 |
Azione6.912 |
|
MOSFET (Metal Oxide) | 100V | 108A (Tc) | 10V | 3.5V @ 250µA | 53.7nC @ 10V | 2592pF @ 50V | ±20V | - | 2.4W (Ta), 166W (Tc) | 9.5 mOhm @ 13A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Toshiba Semiconductor and Storage |
MOSFET TRANSISTOR DPAK(OS) PD
|
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Azione32.502 |
|
MOSFET (Metal Oxide) | 600V | 9.7A (Tc) | 10V | 4V @ 360µA | 20nC @ 10V | 590pF @ 300V | ±30V | - | 30W (Tc) | 380 mOhm @ 4.9A, 10V | 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
IXYS |
MOSFET N-CH 600V 14A TO-263AA
|
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Azione7.164 |
|
MOSFET (Metal Oxide) | 600V | 14A (Tc) | 10V | 5V @ 1mA | 25nC @ 10V | 1480pF @ 25V | ±30V | - | 327W (Tc) | 540 mOhm @ 7A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 (IXFA) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Infineon Technologies |
MOSFET N-CH 75V 120A TO-220AB
|
pacchetto: TO-220-3 |
Azione6.168 |
|
MOSFET (Metal Oxide) | 75V | 120A (Tc) | 10V | 4V @ 150µA | 170nC @ 10V | 6920pF @ 50V | ±20V | - | 300W (Tc) | 4.1 mOhm @ 75A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Rohm Semiconductor |
MOSFET N-CH 40V 26A 8HSOP
|
pacchetto: 8-PowerTDFN |
Azione5.040 |
|
MOSFET (Metal Oxide) | 40V | 26A (Ta) | 4.5V, 10V | 2.5V @ 1mA | 44nC @ 10V | 2988pF @ 20V | ±20V | - | 3W (Ta), 35W (Tc) | 3.3 mOhm @ 26A, 10V | 150°C (TJ) | Surface Mount | 8-HSOP | 8-PowerTDFN |
||
STMicroelectronics |
MOSFET N-CH 600V 16A D2PAK
|
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Azione116.040 |
|
MOSFET (Metal Oxide) | 600V | 16A (Tc) | 10V | 4V @ 100µA | 44nC @ 10V | 1300pF @ 50V | ±30V | - | 125W (Tc) | 220 mOhm @ 8A, 10V | 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 80V 65A POWER56
|
pacchetto: 8-PowerTDFN |
Azione29.994 |
|
MOSFET (Metal Oxide) | 80V | 65A (Tc) | 10V | 4V @ 250µA | 46nC @ 10V | 2470pF @ 40V | ±20V | - | 107W (Tc) | 7.5 mOhm @ 65A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | Power56 | 8-PowerTDFN |
||
Infineon Technologies |
MOSFET N-CH 30V 44A 5X6 PQFN
|
pacchetto: 8-PowerTDFN |
Azione10.560 |
|
MOSFET (Metal Oxide) | 30V | 14A (Ta), 44A (Tc) | 4.5V, 10V | 2.35V @ 25µA | 15nC @ 10V | 1180pF @ 10V | ±20V | - | 3.2W (Ta), 30W (Tc) | 9 mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PQFN (5x6) | 8-PowerTDFN |
||
Vishay Siliconix |
MOSFET N-CH 30V 12A SC-70
|
pacchetto: PowerPAK? SC-70-6 |
Azione395.652 |
|
MOSFET (Metal Oxide) | 30V | 12A (Tc) | 2.5V, 4.5V | 1.5V @ 250µA | 36nC @ 10V | 1265pF @ 15V | ±12V | - | 3.5W (Ta), 19.2W (Tc) | 19 mOhm @ 11A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK? SC-70-6 Single | PowerPAK? SC-70-6 |
||
Rohm Semiconductor |
MOSFET P-CH 20V 0.2A VMT3
|
pacchetto: SOT-723 |
Azione885.816 |
|
MOSFET (Metal Oxide) | 20V | 200mA (Ta) | 2.5V, 4.5V | 2V @ 1mA | - | 50pF @ 10V | ±12V | - | 150mW (Ta) | 1.5 Ohm @ 200mA, 4.5V | 150°C (TJ) | Surface Mount | VMT3 | SOT-723 |
||
Rohm Semiconductor |
MOSFET P-CH 20V 0.1A VML0806
|
pacchetto: 3-SMD, No Lead |
Azione96.000 |
|
MOSFET (Metal Oxide) | 20V | 100mA (Ta) | 1.2V, 4.5V | 1V @ 100µA | - | 15pF @ 10V | ±10V | - | 100mW (Ta) | 3.8 Ohm @ 100mA, 4.5V | 150°C (TJ) | Surface Mount | VML0806 | 3-SMD, No Lead |
||
Diodes Incorporated |
MOSFET P-CH 60V 450MA SOT223
|
pacchetto: TO-261-4, TO-261AA |
Azione353.004 |
|
MOSFET (Metal Oxide) | 60V | 450mA (Ta) | 10V | 3.5V @ 1mA | - | 100pF @ 18V | ±20V | - | 2W (Ta) | 5 Ohm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
||
Vishay Siliconix |
MOSFET P-CH 60V 18.3A TO-252
|
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Azione6.492 |
|
MOSFET (Metal Oxide) | 60V | 18.3A (Tc) | 4.5V, 10V | 3V @ 250µA | 40nC @ 10V | 1710pF @ 25V | ±20V | - | 2.3W (Ta), 38.5W (Tc) | 60 mOhm @ 10A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Nexperia USA Inc. |
MOSFET N-CH 60V 0.36A SOT-23
|
pacchetto: TO-236-3, SC-59, SOT-23-3 |
Azione2.650.464 |
|
MOSFET (Metal Oxide) | 60V | 360mA (Ta) | 10V | 2.4V @ 250µA | 0.8nC @ 4.5V | 50pF @ 10V | ±20V | - | 350mW (Ta) | 1.6 Ohm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-236AB (SOT23) | TO-236-3, SC-59, SOT-23-3 |