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Prodotti GeneSiC Semiconductor

Record 1.989
Pagina  64/67
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
Azione
Quantità
MBRH30020L
GeneSiC Semiconductor

DIODE SCHOTTKY 20V 300A D67

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 20V
  • Current - Average Rectified (Io): 300A
  • Voltage - Forward (Vf) (Max) @ If: 580mV @ 300A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 3mA @ 20V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: D-67
  • Supplier Device Package: D-67
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: D-67
Azione5.472
MBRH200200
GeneSiC Semiconductor

DIODE MODULE 200V 200A D-67

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 200A
  • Voltage - Forward (Vf) (Max) @ If: 920mV @ 200A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1mA @ 200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: D-67
  • Supplier Device Package: D-67
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: D-67
Azione2.640
S150MR
GeneSiC Semiconductor

DIODE GEN PURP REV 1KV DO205AA

  • Diode Type: Standard, Reverse Polarity
  • Voltage - DC Reverse (Vr) (Max): 1000V
  • Current - Average Rectified (Io): 150A
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 150A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis, Stud Mount
  • Package / Case: DO-205AA, DO-8, Stud
  • Supplier Device Package: DO-205AA (DO-8)
  • Operating Temperature - Junction: -65°C ~ 200°C
pacchetto: DO-205AA, DO-8, Stud
Azione3.152
1N3296A
GeneSiC Semiconductor

DIODE GEN PURP 1.2KV 100A DO205

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200V
  • Current - Average Rectified (Io): 100A
  • Voltage - Forward (Vf) (Max) @ If: 1.5V @ 100A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 9mA @ 1200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis, Stud Mount
  • Package / Case: DO-205AA, DO-8, Stud
  • Supplier Device Package: DO-205AA (DO-8)
  • Operating Temperature - Junction: -40°C ~ 200°C
pacchetto: DO-205AA, DO-8, Stud
Azione3.920
MBR7530R
GeneSiC Semiconductor

DIODE SCHOTTKY REV 30V DO5

  • Diode Type: Schottky, Reverse Polarity
  • Voltage - DC Reverse (Vr) (Max): 30V
  • Current - Average Rectified (Io): 75A
  • Voltage - Forward (Vf) (Max) @ If: 750mV @ 75A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1mA @ 30V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis, Stud Mount
  • Package / Case: DO-203AB, DO-5, Stud
  • Supplier Device Package: DO-5
  • Operating Temperature - Junction: -55°C ~ 150°C
pacchetto: DO-203AB, DO-5, Stud
Azione4.640
hot 1N5827
GeneSiC Semiconductor

DIODE SCHOTTKY 30V 15A DO5

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30V
  • Current - Average Rectified (Io): 15A
  • Voltage - Forward (Vf) (Max) @ If: 470mV @ 15A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10mA @ 20V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis, Stud Mount
  • Package / Case: DO-203AB, DO-5, Stud
  • Supplier Device Package: DO-5
  • Operating Temperature - Junction: -65°C ~ 150°C
pacchetto: DO-203AB, DO-5, Stud
Azione6.672
hot 1N5826
GeneSiC Semiconductor

DIODE SCHOTTKY 20V 15A DO5

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 20V
  • Current - Average Rectified (Io): 15A
  • Voltage - Forward (Vf) (Max) @ If: 440mV @ 15A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10mA @ 20V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis, Stud Mount
  • Package / Case: DO-203AB, DO-5, Stud
  • Supplier Device Package: DO-5
  • Operating Temperature - Junction: -65°C ~ 150°C
pacchetto: DO-203AB, DO-5, Stud
Azione3.616
S85V
GeneSiC Semiconductor

DIODE GEN PURP 1.4KV 85A DO5

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1400V
  • Current - Average Rectified (Io): 85A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 85A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10µA @ 100V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis, Stud Mount
  • Package / Case: DO-203AB, DO-5, Stud
  • Supplier Device Package: DO-5
  • Operating Temperature - Junction: -65°C ~ 150°C
pacchetto: DO-203AB, DO-5, Stud
Azione3.200
1N3213R
GeneSiC Semiconductor

DIODE GEN PURP REV 500V 15A DO5

  • Diode Type: Standard, Reverse Polarity
  • Voltage - DC Reverse (Vr) (Max): 500V
  • Current - Average Rectified (Io): 15A
  • Voltage - Forward (Vf) (Max) @ If: 1.5V @ 15A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10µA @ 50V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis, Stud Mount
  • Package / Case: DO-203AB, DO-5, Stud
  • Supplier Device Package: DO-5
  • Operating Temperature - Junction: -65°C ~ 175°C
pacchetto: DO-203AB, DO-5, Stud
Azione4.944
1N1189R
GeneSiC Semiconductor

DIODE GEN PURP REV 600V 35A DO5

  • Diode Type: Standard, Reverse Polarity
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 35A
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 35A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10µA @ 50V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis, Stud Mount
  • Package / Case: DO-203AB, DO-5, Stud
  • Supplier Device Package: DO-5
  • Operating Temperature - Junction: -65°C ~ 190°C
pacchetto: DO-203AB, DO-5, Stud
Azione5.680
GKN71/08
GeneSiC Semiconductor

DIODE GEN PURP 800V 95A DO5

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 800V
  • Current - Average Rectified (Io): 95A
  • Voltage - Forward (Vf) (Max) @ If: 1.5V @ 60A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10mA @ 800V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis, Stud Mount
  • Package / Case: DO-203AB, DO-5, Stud
  • Supplier Device Package: DO-5
  • Operating Temperature - Junction: -40°C ~ 180°C
pacchetto: DO-203AB, DO-5, Stud
Azione2.992
FR6K05
GeneSiC Semiconductor

DIODE GEN PURP 800V 6A DO4

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 800V
  • Current - Average Rectified (Io): 6A
  • Voltage - Forward (Vf) (Max) @ If: 1.4V @ 6A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 500ns
  • Current - Reverse Leakage @ Vr: 25µA @ 50V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis, Stud Mount
  • Package / Case: DO-203AA, DO-4, Stud
  • Supplier Device Package: DO-4
  • Operating Temperature - Junction: -65°C ~ 150°C
pacchetto: DO-203AA, DO-4, Stud
Azione6.912
S12M
GeneSiC Semiconductor

DIODE GEN PURP 1000V 12A DO4

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1000V
  • Current - Average Rectified (Io): 12A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 12A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10µA @ 50V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis, Stud Mount
  • Package / Case: DO-203AA, DO-4, Stud
  • Supplier Device Package: DO-4
  • Operating Temperature - Junction: -65°C ~ 175°C
pacchetto: DO-203AA, DO-4, Stud
Azione3.296
1N1202AR
GeneSiC Semiconductor

DIODE GEN PURP REV 200V 12A DO5

  • Diode Type: Standard, Reverse Polarity
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 12A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 12A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10µA @ 50V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis, Stud Mount
  • Package / Case: DO-203AB, DO-5, Stud
  • Supplier Device Package: DO-5
  • Operating Temperature - Junction: -65°C ~ 200°C
pacchetto: DO-203AB, DO-5, Stud
Azione5.728
UFT14040
GeneSiC Semiconductor

DIODE GEN PURP 400V 70A TO249AB

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io) (per Diode): 70A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 70A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 85ns
  • Current - Reverse Leakage @ Vr: 25µA @ 400V
  • Operating Temperature - Junction: -55°C ~ 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: TO-249AB
  • Supplier Device Package: TO-249AB
pacchetto: TO-249AB
Azione4.640
MBRF50035R
GeneSiC Semiconductor

DIODE SCHOTTKY 35V 250A TO244AB

  • Diode Configuration: 1 Pair Common Anode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 35V
  • Current - Average Rectified (Io) (per Diode): 250A
  • Voltage - Forward (Vf) (Max) @ If: 750mV @ 250A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1mA @ 35V
  • Operating Temperature - Junction: -55°C ~ 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: TO-244AB
  • Supplier Device Package: TO-244AB
pacchetto: TO-244AB
Azione4.048
MBRF400100
GeneSiC Semiconductor

DIODE SCHOTTKY 100V 200A TO244AB

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io) (per Diode): 200A
  • Voltage - Forward (Vf) (Max) @ If: 840mV @ 200A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1mA @ 100V
  • Operating Temperature - Junction: -55°C ~ 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: TO-244AB
  • Supplier Device Package: TO-244AB
pacchetto: TO-244AB
Azione2.672
MBRT60035L
GeneSiC Semiconductor

DIODE SCHOTTKY 35V 300A 3 TOWER

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 35V
  • Current - Average Rectified (Io) (per Diode): 300A
  • Voltage - Forward (Vf) (Max) @ If: 600mV @ 300A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 3mA @ 35V
  • Operating Temperature - Junction: -55°C ~ 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: Three Tower
  • Supplier Device Package: Three Tower
pacchetto: Three Tower
Azione3.008
MBRT30045L
GeneSiC Semiconductor

DIODE SCHOTTKY 45V 150A 3 TOWER

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 45V
  • Current - Average Rectified (Io) (per Diode): 150A
  • Voltage - Forward (Vf) (Max) @ If: 600mV @ 150A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 3mA @ 45V
  • Operating Temperature - Junction: -55°C ~ 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: Three Tower
  • Supplier Device Package: Three Tower
pacchetto: Three Tower
Azione6.016
MBRT30040L
GeneSiC Semiconductor

DIODE SCHOTTKY 40V 150A 3 TOWER

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40V
  • Current - Average Rectified (Io) (per Diode): 150A
  • Voltage - Forward (Vf) (Max) @ If: 600mV @ 150A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 3mA @ 40V
  • Operating Temperature - Junction: -55°C ~ 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: Three Tower
  • Supplier Device Package: Three Tower
pacchetto: Three Tower
Azione7.168
MBR600150CTR
GeneSiC Semiconductor

DIODE SCHOTTKY 150V 300A 2 TOWER

  • Diode Configuration: 1 Pair Common Anode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 150V
  • Current - Average Rectified (Io) (per Diode): 300A
  • Voltage - Forward (Vf) (Max) @ If: 880mV @ 300A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 3mA @ 150V
  • Operating Temperature - Junction: -55°C ~ 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: Twin Tower
  • Supplier Device Package: Twin Tower
pacchetto: Twin Tower
Azione2.784
MURTA60060
GeneSiC Semiconductor

DIODE MODULE 600V 600A 3TOWER

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io) (per Diode): 600A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 300A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 280ns
  • Current - Reverse Leakage @ Vr: 25µA @ 50V
  • Operating Temperature - Junction: -
  • Mounting Type: Chassis Mount
  • Package / Case: Three Tower
  • Supplier Device Package: Three Tower
pacchetto: Three Tower
Azione3.088
MBR600100CT
GeneSiC Semiconductor

DIODE MODULE 100V 300A 2TOWER

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io) (per Diode): 300A
  • Voltage - Forward (Vf) (Max) @ If: 880mV @ 300A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1mA @ 20V
  • Operating Temperature - Junction: -
  • Mounting Type: Chassis Mount
  • Package / Case: Twin Tower
  • Supplier Device Package: Twin Tower
pacchetto: Twin Tower
Azione3.088
MBR50080CTR
GeneSiC Semiconductor

DIODE MODULE 80V 500A 2TOWER

  • Diode Configuration: 1 Pair Common Anode
  • Diode Type: Schottky, Reverse Polarity
  • Voltage - DC Reverse (Vr) (Max): 80V
  • Current - Average Rectified (Io) (per Diode): 500A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 880mV @ 250A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1mA @ 20V
  • Operating Temperature - Junction: -
  • Mounting Type: Chassis Mount
  • Package / Case: Twin Tower
  • Supplier Device Package: Twin Tower
pacchetto: Twin Tower
Azione7.328
MBRT40060
GeneSiC Semiconductor

DIODE MODULE 60V 400A 3TOWER

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 60V
  • Current - Average Rectified (Io) (per Diode): 400A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 800mV @ 200A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1mA @ 20V
  • Operating Temperature - Junction: -55°C ~ 175°C
  • Mounting Type: Chassis Mount
  • Package / Case: Three Tower
  • Supplier Device Package: Three Tower
pacchetto: Three Tower
Azione2.896
MBR20080CTR
GeneSiC Semiconductor

DIODE MODULE 80V 200A 2TOWER

  • Diode Configuration: 1 Pair Common Anode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 80V
  • Current - Average Rectified (Io) (per Diode): 200A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 840mV @ 100A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 5mA @ 20V
  • Operating Temperature - Junction: -
  • Mounting Type: Chassis Mount
  • Package / Case: Twin Tower
  • Supplier Device Package: Twin Tower
pacchetto: Twin Tower
Azione5.984
MBRT120150R
GeneSiC Semiconductor

DIODE SCHOTTKY 150V 60A 3 TOWER

  • Diode Configuration: 1 Pair Common Anode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 150V
  • Current - Average Rectified (Io) (per Diode): 60A
  • Voltage - Forward (Vf) (Max) @ If: 880mV @ 60A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1mA @ 150V
  • Operating Temperature - Junction: -55°C ~ 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: Three Tower
  • Supplier Device Package: Three Tower
pacchetto: Three Tower
Azione3.280
MBR2X160A080
GeneSiC Semiconductor

DIODE SCHOTTKY 80V 160A SOT227

  • Diode Configuration: 2 Independent
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 80V
  • Current - Average Rectified (Io) (per Diode): 160A
  • Voltage - Forward (Vf) (Max) @ If: 840mV @ 160A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1mA @ 80V
  • Operating Temperature - Junction: -40°C ~ 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: SOT-227-4, miniBLOC
  • Supplier Device Package: SOT-227
pacchetto: SOT-227-4, miniBLOC
Azione3.872
GBPC5010T
GeneSiC Semiconductor

DIODE BRIDGE 1000V 50A GBPC-T/W

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1000V
  • Current - Average Rectified (Io): 50A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 25A
  • Current - Reverse Leakage @ Vr: 5µA @ 1000V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: QC Terminal
  • Package / Case: 4-Square, GBPC
  • Supplier Device Package: GBPC
pacchetto: 4-Square, GBPC
Azione5.984
BR81
GeneSiC Semiconductor

DIODE BRIDGE 100V 8A BR-8

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 100V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 4A
  • Current - Reverse Leakage @ Vr: 10µA @ 100V
  • Operating Temperature: -65°C ~ 125°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-Square, BR-8
  • Supplier Device Package: BR-8
pacchetto: 4-Square, BR-8
Azione16.704