Prodotti IXYS

IXBX25N250

IXYS

IGBT 2500V 55A 300W PLUS247

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 2500V
• Current - Collector (Ic) (Max): 55A
• Current - Collector Pulsed (Icm): 180A
• Vce(on) (Max) @ Vge, Ic: 3.3V @ 15V, 25A
• Power - Max: 300W
• Switching Energy: -
• Input Type: Standard
• Gate Charge: 103nC
• Td (on/off) @ 25°C: -
• Test Condition: -
• Reverse Recovery Time (trr): 1.6µs
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: PLUS247?-3

pacchetto: TO-247-3

MIO2400-17E10

IXYS

MOD IGBT SGL SWITCH 1700V E10

• IGBT Type: NPT
• Configuration: Single Switch
• Voltage - Collector Emitter Breakdown (Max): 1700V
• Current - Collector (Ic) (Max): 2400A
• Power - Max: -
• Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 2400A
• Current - Collector Cutoff (Max): 120mA
• Input Capacitance (Cies) @ Vce: 230nF @ 25V
• Input: Standard
• NTC Thermistor: No
• Operating Temperature: -40°C ~ 125°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: E10
• Supplier Device Package: E10

pacchetto: E10

MUBW6-06A6

IXYS

MODULE IGBT CBI E1

• IGBT Type: NPT
• Configuration: Three Phase Inverter with Brake
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 7A
• Power - Max: 38W
• Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 4A
• Current - Collector Cutoff (Max): 10µA
• Input Capacitance (Cies) @ Vce: 0.34nF @ 25V
• Input: Three Phase Bridge Rectifier
• NTC Thermistor: Yes
• Operating Temperature: 150°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: E1
• Supplier Device Package: E1

pacchetto: E1

IXTV200N10TS

IXYS

MOSFET N-CH 100V 200A PLUS220SMD

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 152nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 9400pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 550W (Tc)
• Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 50A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PLUS-220SMD
• Package / Case: PLUS-220SMD

pacchetto: PLUS-220SMD

IXFH32N50Q

IXYS

MOSFET N-CH 500V 30A TO-247AD

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 500V
• Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4.5V @ 4mA
• Gate Charge (Qg) (Max) @ Vgs: 190nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 4925pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 360W (Tc)
• Rds On (Max) @ Id, Vgs: 160 mOhm @ 16A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-247AD (IXFH)
• Package / Case: TO-247-3

pacchetto: TO-247-3

IXTV22N60PS

IXYS

MOSFET N-CH 600V 22A PLUS220-SMD

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 62nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 3600pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 400W (Tc)
• Rds On (Max) @ Id, Vgs: 350 mOhm @ 11A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PLUS-220SMD
• Package / Case: PLUS-220SMD

pacchetto: PLUS-220SMD

IXFE44N60

IXYS

MOSFET N-CH 600V 41A SOT-227B

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 41A
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4.5V @ 8mA
• Gate Charge (Qg) (Max) @ Vgs: 330nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 8900pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 500W (Tc)
• Rds On (Max) @ Id, Vgs: 130 mOhm @ 22A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Supplier Device Package: SOT-227B
• Package / Case: SOT-227-4, miniBLOC

pacchetto: SOT-227-4, miniBLOC

IXFK100N10

IXYS

MOSFET N-CH 100V 100A TO-264AA

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 8mA
• Gate Charge (Qg) (Max) @ Vgs: 360nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 9000pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 500W (Tc)
• Rds On (Max) @ Id, Vgs: 12 mOhm @ 75A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-264AA (IXFK)
• Package / Case: TO-264-3, TO-264AA

pacchetto: TO-264-3, TO-264AA

IXKF40N60SCD1

IXYS

MOSFET N-CH 600V 38A I4-PAC-5

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3.9V @ 3mA
• Gate Charge (Qg) (Max) @ Vgs: 250nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): ±20V
• FET Feature: Super Junction
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: 70 mOhm @ 25A, 10V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: ISOPLUS i4-PAC?
• Package / Case: i4-Pac?-5 (3 leads)

pacchetto: i4-Pac?-5 (3 leads)

IXFH30N50

IXYS

MOSFET N-CH 500V 30A TO-247

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 500V
• Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 4mA
• Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 5700pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 360W (Tc)
• Rds On (Max) @ Id, Vgs: 160 mOhm @ 15A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-247AD (IXFH)
• Package / Case: TO-247-3

pacchetto: TO-247-3

IXTH50N30

IXYS

MOSFET N-CH 300V 50A TO-247

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 300V
• Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 165nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 4400pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 400W (Tc)
• Rds On (Max) @ Id, Vgs: 65 mOhm @ 25A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-247 (IXTH)
• Package / Case: TO-247-3

pacchetto: TO-247-3

IXTA220N04T2-7

IXYS

MOSFET N-CH 40V 220A TO-263-7

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40V
• Current - Continuous Drain (Id) @ 25°C: 220A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 112nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 6820pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 360W (Tc)
• Rds On (Max) @ Id, Vgs: 3.5 mOhm @ 50A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-263-7 (IXTA..7)
• Package / Case: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB

pacchetto: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB

IXFA230N075T2-7

IXYS

MOSFET N-CH 75V 230A TO-263-7

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 75V
• Current - Continuous Drain (Id) @ 25°C: 230A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 178nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 10500pF @ 25V
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): 480W (Tc)
• Rds On (Max) @ Id, Vgs: 4.2 mOhm @ 50A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-263-7 (IXTA..7)
• Package / Case: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB

pacchetto: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB

IXTQ14N60P

IXYS

MOSFET N-CH 600V 14A TO-3P

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2500pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 300W (Tc)
• Rds On (Max) @ Id, Vgs: 550 mOhm @ 7A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-3P
• Package / Case: TO-3P-3, SC-65-3

pacchetto: TO-3P-3, SC-65-3

IXTA110N055T7

IXYS

MOSFET N-CH 55V 110A TO-263-7

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 55V
• Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 100µA
• Gate Charge (Qg) (Max) @ Vgs: 67nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 3080pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 230W (Tc)
• Rds On (Max) @ Id, Vgs: 7 mOhm @ 25A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-263-7 (IXTA..7)
• Package / Case: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB

pacchetto: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB

IXTP8N50P

IXYS

MOSFET N-CH 500V 8A TO-220

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 500V
• Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5.5V @ 100µA
• Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1050pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 150W (Tc)
• Rds On (Max) @ Id, Vgs: 800 mOhm @ 4A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220AB
• Package / Case: TO-220-3

pacchetto: TO-220-3

IXTH450P2

IXYS

MOSFET N-CH 500V 16A TO247

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 500V
• Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2530pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 300W (Tc)
• Rds On (Max) @ Id, Vgs: 330 mOhm @ 8A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-247 (IXTH)
• Package / Case: TO-247-3

pacchetto: TO-247-3

IXTX120N65X2

IXYS

MOSFET N-CH 650V 120A PLUS247

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 650V
• Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4.5V @ 8mA
• Gate Charge (Qg) (Max) @ Vgs: 240nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 13600pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 1250W (Tc)
• Rds On (Max) @ Id, Vgs: 24 mOhm @ 60A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PLUS247?-3
• Package / Case: TO-247-3

pacchetto: TO-247-3

IXFH30N85X

IXYS

MOSFET N-CH 850V 30A TO247-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 850V
• Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5.5V @ 2.5mA
• Gate Charge (Qg) (Max) @ Vgs: 68nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2460pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 695W (Tc)
• Rds On (Max) @ Id, Vgs: 220 mOhm @ 500mA, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-247AD (IXFH)
• Package / Case: TO-247-3

pacchetto: TO-247-3

IXTP70N075T2

IXYS

MOSFET N-CH 75V 70A TO-220

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 75V
• Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 46nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2725pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 150W (Tc)
• Rds On (Max) @ Id, Vgs: 12 mOhm @ 25A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220AB
• Package / Case: TO-220-3

pacchetto: TO-220-3

CLA30E1200HB

IXYS

THYRISTOR PHASE 1200V TO-247AD

• Voltage - Off State: 1200V
• Voltage - Gate Trigger (Vgt) (Max): 1.3V
• Current - Gate Trigger (Igt) (Max): 28mA
• Voltage - On State (Vtm) (Max): 1.56V
• Current - On State (It (AV)) (Max): 30A
• Current - On State (It (RMS)) (Max): 47A
• Current - Hold (Ih) (Max): 60mA
• Current - Off State (Max): 10µA
• Current - Non Rep. Surge 50, 60Hz (Itsm): 300A, 325A
• SCR Type: Standard Recovery
• Operating Temperature: -40°C ~ 150°C
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247AD

pacchetto: TO-247-3

CS19-12HO1S

IXYS

THYRISTOR PHASE 1200V TO-263AB

• Voltage - Off State: 1200V
• Voltage - Gate Trigger (Vgt) (Max): 1.5V
• Current - Gate Trigger (Igt) (Max): 28mA
• Voltage - On State (Vtm) (Max): 1.6V
• Current - On State (It (AV)) (Max): 19A
• Current - On State (It (RMS)) (Max): 29A
• Current - Hold (Ih) (Max): 50mA
• Current - Off State (Max): 5mA
• Current - Non Rep. Surge 50, 60Hz (Itsm): 160A, 180A
• SCR Type: Standard Recovery
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: TO-263 (D2Pak)

pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

VKF55-08IO7

IXYS

RECT BRIDGE 1PH 800V FO-T-A

• Structure: Bridge, Single Phase - All SCRs
• Number of SCRs, Diodes: 4 SCRs
• Voltage - Off State: 800V
• Current - On State (It (AV)) (Max): 53A
• Current - On State (It (RMS)) (Max): -
• Voltage - Gate Trigger (Vgt) (Max): 1.5V
• Current - Gate Trigger (Igt) (Max): 100mA
• Current - Non Rep. Surge 50, 60Hz (Itsm): 550A, 600A
• Current - Hold (Ih) (Max): 200mA
• Operating Temperature: -40°C ~ 125°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: FO-T-A

pacchetto: FO-T-A

DS75-12B

IXYS

DIODE GEN PURP 1.2KV 110A DO203

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1200V
• Current - Average Rectified (Io): 110A
• Voltage - Forward (Vf) (Max) @ If: 1.17V @ 150A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 6mA @ 1200V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis, Stud Mount
• Package / Case: DO-203AB, DO-5, Stud
• Supplier Device Package: DO-203AB
• Operating Temperature - Junction: -40°C ~ 180°C

pacchetto: DO-203AB, DO-5, Stud

DHG20I600PA

IXYS

DIODE GEN PURP 600V 20A TO220AC

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600V
• Current - Average Rectified (Io): 20A
• Voltage - Forward (Vf) (Max) @ If: 2.32V @ 20A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 35ns
• Current - Reverse Leakage @ Vr: 30µA @ 600V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: TO-220-2
• Supplier Device Package: TO-220AC
• Operating Temperature - Junction: -55°C ~ 150°C

pacchetto: TO-220-2

HTZ160C17K

IXYS

DIODE MODULE 16.8KV 1.7A

• Diode Configuration: 1 Pair Series Connection
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 16800V
• Current - Average Rectified (Io) (per Diode): 1.7A
• Voltage - Forward (Vf) (Max) @ If: 12V @ 2A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 500µA @ 16800V
• Operating Temperature - Junction: -
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: Module

pacchetto: Module

VUO100-12NO7

IXYS

RECT BRIDGE 100A 1200V FO-T-A

• Diode Type: Three Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 1200V
• Current - Average Rectified (Io): 100A
• Voltage - Forward (Vf) (Max) @ If: 1.4V @ 150A
• Current - Reverse Leakage @ Vr: 500µA @ 1200V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: FO-T-A
• Supplier Device Package: FO-T-A

pacchetto: FO-T-A

IXMS150PSI

IXYS

IC REG CTRLR HALF-BRIDGE 24DIP

• Output Type: Transistor Driver
• Function: Step-Up/Step-Down
• Output Configuration: Positive
• Topology: Half-Bridge
• Number of Outputs: 2
• Output Phases: 2
• Voltage - Supply (Vcc/Vdd): 12V
• Frequency - Switching: 10kHz ~ 400kHz
• Duty Cycle (Max): 95%
• Synchronous Rectifier: No
• Clock Sync: No
• Serial Interfaces: -
• Control Features: Dead Time Control, Enable, Frequency Control
• Operating Temperature: -40°C ~ 85°C (TA)
• Package / Case: 24-DIP (0.300", 7.62mm)
• Supplier Device Package: 24-DIP

pacchetto: 24-DIP (0.300", 7.62mm)

LDS8640-008-T2

IXYS

IC LED DRIVER RGLTR 200MA 16TQFN

• Type: DC DC Regulator
• Topology: Switched Capacitor (Charge Pump)
• Internal Switch(s): Yes
• Number of Outputs: 2
• Voltage - Supply (Min): 2.7V
• Voltage - Supply (Max): 5.5V
• Voltage - Output: 6V
• Current - Output / Channel: 200mA
• Frequency: 1MHz
• Dimming: -
• Applications: Camera Flash
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 16-WFQFN Exposed Pad
• Supplier Device Package: 16-TQFN (3x3)

pacchetto: 16-WFQFN Exposed Pad

IXDI430MCI

IXYS

IC DRVR MOSF/IGBT 30A TO220-5

• Driven Configuration: Low-Side
• Channel Type: Single
• Number of Drivers: 1
• Gate Type: IGBT, N-Channel, P-Channel MOSFET
• Voltage - Supply: 8.5 V ~ 35 V
• Logic Voltage - VIL, VIH: 0.8V, 3.5V
• Current - Peak Output (Source, Sink): 30A, 30A
• Input Type: Inverting
• High Side Voltage - Max (Bootstrap): -
• Rise / Fall Time (Typ): 18ns, 16ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-220-5
• Supplier Device Package: TO-220-5

pacchetto: TO-220-5