Immagine |
Numero di parte |
Produttore |
Descrizione |
pacchetto |
Azione |
Quantità |
Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Mounting Type | Package / Case | Supplier Device Package | Operating Temperature - Junction |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
DIODE CHIP EMITTER CONTROLLED
|
pacchetto: - |
Azione3.328 |
|
- | - | - | - | - | - | - | - | - | - | - |
||
Infineon Technologies |
DIODE GEN PURP 1.2KV 75A DIE
|
pacchetto: Die |
Azione5.136 |
|
1200V | 75A | 2.7V @ 75A | Fast Recovery =< 500ns, > 200mA (Io) | 285ns | 1.5µA @ 1200V | - | Surface Mount | Die | Die | -40°C ~ 150°C |
||
Infineon Technologies |
DIODE CHIP EMITTER CONTROLLED
|
pacchetto: - |
Azione7.440 |
|
- | - | - | - | - | - | - | - | - | - | - |
||
Infineon Technologies |
DIODE CHIP EMITTER CONTROLLED
|
pacchetto: - |
Azione4.960 |
|
- | - | - | - | - | - | - | - | - | - | - |
||
Infineon Technologies |
DIODE CHIP EMITTER CONTROLLED
|
pacchetto: - |
Azione3.424 |
|
- | - | - | - | - | - | - | - | - | - | - |
||
Infineon Technologies |
DIODE CHIP EMITTER CONTROLLED
|
pacchetto: - |
Azione3.808 |
|
- | - | - | - | - | - | - | - | - | - | - |
||
Infineon Technologies |
DIODE CHIP EMITTER CONTROLLED
|
pacchetto: - |
Azione5.904 |
|
- | - | - | - | - | - | - | - | - | - | - |
||
Infineon Technologies |
DIODE CHIP EMITTER CONTROLLED
|
pacchetto: - |
Azione7.552 |
|
- | - | - | - | - | - | - | - | - | - | - |
||
Infineon Technologies |
DIODE CHIP EMITTER CONTROLLED
|
pacchetto: - |
Azione7.792 |
|
- | - | - | - | - | - | - | - | - | - | - |
||
Infineon Technologies |
DIODE CHIP EMITTER CONTROLLED
|
pacchetto: - |
Azione6.512 |
|
- | - | - | - | - | - | - | - | - | - | - |
||
Infineon Technologies |
DIODE CHIP EMITTER CONTROLLED
|
pacchetto: - |
Azione4.976 |
|
- | - | - | - | - | - | - | - | - | - | - |
||
Infineon Technologies |
DIODE CHIP EMITTER CONTROLLED
|
pacchetto: - |
Azione6.896 |
|
- | - | - | - | - | - | - | - | - | - | - |
||
Infineon Technologies |
DIODE CHIP EMITTER CONTROLLED
|
pacchetto: - |
Azione7.888 |
|
- | - | - | - | - | - | - | - | - | - | - |
||
Infineon Technologies |
DIODE GEN PURP 1.2KV 25A DIE
|
pacchetto: Die |
Azione3.280 |
|
1200V | 25A | 2.7V @ 25A | Fast Recovery =< 500ns, > 200mA (Io) | 190ns | 700nA @ 1200V | - | Surface Mount | Die | Die | -40°C ~ 150°C |
||
Infineon Technologies |
DIODE CHIP EMITTER CONTROLLED
|
pacchetto: - |
Azione5.632 |
|
- | - | - | - | - | - | - | - | - | - | - |
||
Infineon Technologies |
DIODE CHIP EMITTER CONTROLLED
|
pacchetto: - |
Azione7.008 |
|
- | - | - | - | - | - | - | - | - | - | - |
||
Infineon Technologies |
DIODE GEN PURP 1.2KV 200A DIE
|
pacchetto: Die |
Azione7.488 |
|
1200V | 200A | 2.7V @ 200A | Fast Recovery =< 500ns, > 200mA (Io) | 360ns | 3.6µA @ 1200V | - | Surface Mount | Die | Die | -40°C ~ 175°C |
||
Infineon Technologies |
DIODE SCHOTTKY 650V 12A VSON-4
|
pacchetto: 4-PowerTSFN |
Azione3.024 |
|
650V | 12A (DC) | 1.7V @ 12A | No Recovery Time > 500mA (Io) | 0ns | 190µA @ 650V | 360pF @ 1V, 1MHz | Surface Mount | 4-PowerTSFN | PG-VSON-4 | -55°C ~ 150°C |
||
Infineon Technologies |
DIODE SCHOTTKY 650V 10A VSON-4
|
pacchetto: 4-PowerTSFN |
Azione4.496 |
|
650V | 10A (DC) | 1.7V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 180µA @ 650V | 300pF @ 1V, 1MHz | Surface Mount | 4-PowerTSFN | PG-VSON-4 | -55°C ~ 150°C |
||
Infineon Technologies |
DIODE SCHOTTKY 650V 8A VSON-4
|
pacchetto: 4-PowerTSFN |
Azione4.976 |
|
650V | 8A (DC) | 1.7V @ 8A | No Recovery Time > 500mA (Io) | 0ns | 140µA @ 650V | 250pF @ 1V, 1MHz | Surface Mount | 4-PowerTSFN | PG-VSON-4 | -55°C ~ 150°C |
||
Infineon Technologies |
DIODE SCHOTTKY 650V 6A VSON-4
|
pacchetto: 4-PowerTSFN |
Azione7.568 |
|
650V | 6A (DC) | 1.7V @ 6A | No Recovery Time > 500mA (Io) | 0ns | 110µA @ 650V | 190pF @ 1V, 1MHz | Surface Mount | 4-PowerTSFN | PG-VSON-4 | -55°C ~ 150°C |
||
Infineon Technologies |
DIODE SCHOTTKY 650V 4A VSON-4
|
pacchetto: 4-PowerTSFN |
Azione2.576 |
|
650V | 4A (DC) | 1.7V @ 4A | No Recovery Time > 500mA (Io) | 0ns | 70µA @ 650V | 130pF @ 1V, 1MHz | Surface Mount | 4-PowerTSFN | PG-VSON-4 | -55°C ~ 175°C |
||
Infineon Technologies |
DIODE SCHOTTKY 650V 2A VSON-4
|
pacchetto: 4-PowerTSFN |
Azione4.816 |
|
650V | 2A (DC) | 1.7V @ 2A | No Recovery Time > 500mA (Io) | 0ns | 35µA @ 650V | 70pF @ 1V, 1MHz | Surface Mount | 4-PowerTSFN | PG-VSON-4 | -55°C ~ 175°C |
||
Infineon Technologies |
DIODE SCHOTTKY 650V 12A TO263-2
|
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Azione6.144 |
|
650V | 12A (DC) | 1.8V @ 12A | No Recovery Time > 500mA (Io) | 0ns | 2.1mA @ 650V | 360pF @ 1V, 1MHz | Surface Mount | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | PG-TO263-2 | -55°C ~ 175°C |
||
Infineon Technologies |
DIODE SCHOTTKY 650V 10A TO263-2
|
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Azione3.312 |
|
650V | 10A (DC) | 1.8V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 1.7mA @ 650V | 300pF @ 1V, 1MHz | Surface Mount | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | PG-TO263-2 | -55°C ~ 175°C |
||
Infineon Technologies |
DIODE SCHOTTKY 650V 9A TO263-2
|
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Azione2.656 |
|
650V | 9A (DC) | 1.8V @ 9A | No Recovery Time > 500mA (Io) | 0ns | 1.6mA @ 650V | 270pF @ 1V, 1MHz | Surface Mount | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | PG-TO263-2 | -55°C ~ 175°C |
||
Infineon Technologies |
DIODE SCHOTTKY 650V 8A TO263-2
|
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Azione5.296 |
|
650V | 8A (DC) | 1.8V @ 8A | No Recovery Time > 500mA (Io) | 0ns | 1.4mA @ 650V | 250pF @ 1V, 1MHz | Surface Mount | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | PG-TO263-2 | -55°C ~ 175°C |
||
Infineon Technologies |
DIODE SCHOTTKY 650V 6A TO263-2
|
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Azione3.552 |
|
650V | 6A (DC) | 1.8V @ 6A | No Recovery Time > 500mA (Io) | 0ns | 1.1mA @ 650V | 190pF @ 1V, 1MHz | Surface Mount | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | PG-TO263-2 | -55°C ~ 175°C |
||
Infineon Technologies |
DIODE SCHOTTKY 650V 5A TO263-2
|
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Azione4.736 |
|
650V | 5A (DC) | 1.8V @ 5A | No Recovery Time > 500mA (Io) | 0ns | 830µA @ 650V | 160pF @ 1V, 1MHz | Surface Mount | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | PG-TO263-2 | -55°C ~ 175°C |
||
Infineon Technologies |
DIODE SCHOTTKY 650V 4A TO263-2
|
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Azione5.168 |
|
650V | 4A (DC) | 1.8V @ 4A | No Recovery Time > 500mA (Io) | 0ns | 670µA @ 650V | 130pF @ 1V, 1MHz | Surface Mount | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | PG-TO263-2 | -55°C ~ 175°C |