Pagina 5 - Prodotti Infineon Technologies - Transistor - FET, MOSFET - Array

Numero di parte	Produttore	Descrizione	pacchetto	Azione	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
IRF40H233XTMA1	Infineon Technologies	MOSFET 2N-CH 40V 8TDSON FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: PG-TDSON-8-900	pacchetto: -	Request a Quote	-	40V	-	-	-	-	-	-	-	Surface Mount	8-PowerTDFN	PG-TDSON-8-900
IRF7380QTRPBF	Infineon Technologies	MOSFET 2N-CH 80V 3.6A 8-SOIC FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 3.6A Rds On (Max) @ Id, Vgs: 73mOhm @ 2.2A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 25V Power - Max: 2W Operating Temperature: - Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	pacchetto: -	Request a Quote	Logic Level Gate	80V	3.6A	73mOhm @ 2.2A, 10V	4V @ 250µA	23nC @ 10V	660pF @ 25V	2W	-	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
BSC072N04LDATMA1	Infineon Technologies	MOSFET 2N-CH 40V 20A 8TDSON FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 7.2mOhm @ 17A, 10V Vgs(th) (Max) @ Id: 2.2V @ 30µA Gate Charge (Qg) (Max) @ Vgs: 52nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3990pF @ 20V Power - Max: 65W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: PG-TDSON-8-4	pacchetto: -	Azione41.562	Logic Level Gate	40V	20A (Tc)	7.2mOhm @ 17A, 10V	2.2V @ 30µA	52nC @ 10V	3990pF @ 20V	65W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerVDFN	PG-TDSON-8-4
IRLHS6376TR2PBF	Infineon Technologies	MOSFET 2N-CH 30V 3.6A PQFN FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3.6A Rds On (Max) @ Id, Vgs: 63mOhm @ 3.4A, 4.5V Vgs(th) (Max) @ Id: 1.1V @ 10µA Gate Charge (Qg) (Max) @ Vgs: 2.8nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 25V Power - Max: 1.5W Operating Temperature: - Mounting Type: Surface Mount Package / Case: 6-VDFN Exposed Pad Supplier Device Package: 6-PQFN (2x2)	pacchetto: -	Request a Quote	Logic Level Gate	30V	3.6A	63mOhm @ 3.4A, 4.5V	1.1V @ 10µA	2.8nC @ 4.5V	270pF @ 25V	1.5W	-	Surface Mount	6-VDFN Exposed Pad	6-PQFN (2x2)
DF23MR12W1M1PB11BPSA1	Infineon Technologies	SIC 2N-CH 1200V 25A AG-EASY1B FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 25A (Tj) Rds On (Max) @ Id, Vgs: 45mOhm @ 25A, 15V Vgs(th) (Max) @ Id: 5.55V @ 10mA Gate Charge (Qg) (Max) @ Vgs: 62nC @ 15V Input Capacitance (Ciss) (Max) @ Vds: 1840pF @ 800V Power - Max: - Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: AG-EASY1B-2	pacchetto: -	Azione72	-	1200V (1.2kV)	25A (Tj)	45mOhm @ 25A, 15V	5.55V @ 10mA	62nC @ 15V	1840pF @ 800V	-	-40°C ~ 150°C (TJ)	Chassis Mount	Module	AG-EASY1B-2
FF1MR12KM1HPHPSA1	Infineon Technologies	MOSFET FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	pacchetto: -	Azione48	-	-	-	-	-	-	-	-	-	-	-	-
IQE220N15NM5CGSCATMA1	Infineon Technologies	TRENCH >=100V FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: Surface Mount Package / Case: 9-PowerWDFN Supplier Device Package: PG-WHTFN-9	pacchetto: -	Request a Quote	-	150V	-	-	-	-	-	-	-	Surface Mount	9-PowerWDFN	PG-WHTFN-9
IRF7103QTRPBF	Infineon Technologies	MOSFET 2N-CH 50V 3A 8-SOIC FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 3A Rds On (Max) @ Id, Vgs: 130mOhm @ 3A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 255pF @ 25V Power - Max: 2.4W Operating Temperature: - Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	pacchetto: -	Request a Quote	-	50V	3A	130mOhm @ 3A, 10V	3V @ 250µA	15nC @ 10V	255pF @ 25V	2.4W	-	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
IRF7313TRPBF-1	Infineon Technologies	MOSFET 2N-CH 30V 6.5A 8SOIC FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta) Rds On (Max) @ Id, Vgs: 29mOhm @ 5.8A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 25V Power - Max: 2W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	pacchetto: -	Request a Quote	-	30V	6.5A (Ta)	29mOhm @ 5.8A, 10V	1V @ 250µA	33nC @ 10V	650pF @ 25V	2W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
FD1400R12IP4DBOSA1	Infineon Technologies	MOSFET FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	pacchetto: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
IAUC60N04S6N031HATMA1	Infineon Technologies	MOSFET 2N-CH 40V 60A 8TDSON FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 60A (Tj) Rds On (Max) @ Id, Vgs: 3.1mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 3V @ 25µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1922pF @ 25V Power - Max: 75W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: PG-TDSON-8-56	pacchetto: -	Azione28.929	-	40V	60A (Tj)	3.1mOhm @ 30A, 10V	3V @ 25µA	30nC @ 10V	1922pF @ 25V	75W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerVDFN	PG-TDSON-8-56
IPG20N04S4L18AATMA1	Infineon Technologies	MOSFET 2N-CH 40V 20A 8TDSON FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 18mOhm @ 17A, 10V Vgs(th) (Max) @ Id: 2.2V @ 8µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1071pF @ 25V Power - Max: 26W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount, Wettable Flank Package / Case: 8-PowerVDFN Supplier Device Package: PG-TDSON-8-10	pacchetto: -	Azione14.310	-	40V	20A (Tc)	18mOhm @ 17A, 10V	2.2V @ 8µA	15nC @ 10V	1071pF @ 25V	26W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount, Wettable Flank	8-PowerVDFN	PG-TDSON-8-10
IRF7307QTRPBF	Infineon Technologies	MOSFET N/P-CH 20V 5.2A/4.3A 8SO FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5.2A, 4.3A Rds On (Max) @ Id, Vgs: 50mOhm @ 2.6A, 4.5V Vgs(th) (Max) @ Id: 700mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 15V Power - Max: 2W Operating Temperature: - Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	pacchetto: -	Request a Quote	Logic Level Gate	20V	5.2A, 4.3A	50mOhm @ 2.6A, 4.5V	700mV @ 250µA	20nC @ 4.5V	660pF @ 15V	2W	-	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
IRF7341QTRPBF	Infineon Technologies	MOSFET 2N-CH 55V 5.1A 8-SOIC FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 5.1A Rds On (Max) @ Id, Vgs: 50mOhm @ 5.1A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 780pF @ 25V Power - Max: 2.4W Operating Temperature: - Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	pacchetto: -	Request a Quote	Logic Level Gate	55V	5.1A	50mOhm @ 5.1A, 10V	1V @ 250µA (Min)	44nC @ 10V	780pF @ 25V	2.4W	-	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
BSO220N03MDGXUMA1	Infineon Technologies	MOSFET 2N-CH 30V 6A 8DSO FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6A Rds On (Max) @ Id, Vgs: 22mOhm @ 7.7A, 10V Vgs(th) (Max) @ Id: 2.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 15V Power - Max: 1.4W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: PG-DSO-8	pacchetto: -	Azione45.426	Logic Level Gate	30V	6A	22mOhm @ 7.7A, 10V	2.1V @ 250µA	10nC @ 10V	800pF @ 15V	1.4W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	PG-DSO-8
F445MR12W1M1B76BPSA1	Infineon Technologies	SIC 4N-CH 1200V 25A AG-EASY1B FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 25A (Tj) Rds On (Max) @ Id, Vgs: 45mOhm @ 25A, 15V Vgs(th) (Max) @ Id: 5.55V @ 10mA Gate Charge (Qg) (Max) @ Vgs: 62nC @ 15V Input Capacitance (Ciss) (Max) @ Vds: 1840pF @ 800V Power - Max: - Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: AG-EASY1B-2	pacchetto: -	Request a Quote	-	1200V (1.2kV)	25A (Tj)	45mOhm @ 25A, 15V	5.55V @ 10mA	62nC @ 15V	1840pF @ 800V	-	-40°C ~ 150°C (TJ)	Chassis Mount	Module	AG-EASY1B-2
IQE220N15NM5SCATMA1	Infineon Technologies	TRENCH >=100V FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Supplier Device Package: PG-WHSON-8	pacchetto: -	Request a Quote	-	150V	-	-	-	-	-	-	-	Surface Mount	8-PowerWDFN	PG-WHSON-8
FF11MR12W1M1B70BPSA1	Infineon Technologies	SIC 2N-CH 1200V AG-EASY1B FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 100A (Tj) Rds On (Max) @ Id, Vgs: 11.3mOhm @ 100A, 15V Vgs(th) (Max) @ Id: 5.55V @ 40mA Gate Charge (Qg) (Max) @ Vgs: 248nC @ 15V Input Capacitance (Ciss) (Max) @ Vds: 7360pF @ 800V Power - Max: - Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: AG-EASY1B	pacchetto: -	Request a Quote	-	1200V (1.2kV)	100A (Tj)	11.3mOhm @ 100A, 15V	5.55V @ 40mA	248nC @ 15V	7360pF @ 800V	-	-40°C ~ 150°C (TJ)	Chassis Mount	Module	AG-EASY1B
64-2013PBF	Infineon Technologies	MOSFET FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	pacchetto: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
FF11MR12W1M1PB11BPSA1	Infineon Technologies	SIC 2N-CH 1200V AG-EASY1B-2 FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 100A (Tj) Rds On (Max) @ Id, Vgs: 11.3mOhm @ 100A, 15V Vgs(th) (Max) @ Id: 5.55V @ 40mA Gate Charge (Qg) (Max) @ Vgs: 248nC @ 15V Input Capacitance (Ciss) (Max) @ Vds: 7360pF @ 800V Power - Max: - Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: AG-EASY1B-2	pacchetto: -	Request a Quote	-	1200V (1.2kV)	100A (Tj)	11.3mOhm @ 100A, 15V	5.55V @ 40mA	248nC @ 15V	7360pF @ 800V	-	-40°C ~ 150°C (TJ)	Chassis Mount	Module	AG-EASY1B-2
IAUC45N04S6L063HATMA1	Infineon Technologies	MOSFET 2N-CH 40V 45A 8TDSON FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 45A (Tj) Rds On (Max) @ Id, Vgs: 6.3mOhm @ 22A, 10V Vgs(th) (Max) @ Id: 2V @ 9µA Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 775pF @ 25V Power - Max: 41W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: PG-TDSON-8-57	pacchetto: -	Request a Quote	Logic Level Gate	40V	45A (Tj)	6.3mOhm @ 22A, 10V	2V @ 9µA	13nC @ 10V	775pF @ 25V	41W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerVDFN	PG-TDSON-8-57
FF11MR12W2M1HPB11BPSA1	Infineon Technologies	MOSFET 1200V FET Type: - FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	pacchetto: -	Azione54	-	1200V (1.2kV)	-	-	-	-	-	-	-	-	-	-
FF8MR12W1M1HB11BPSA1	Infineon Technologies	SIC 1200V AG-EASY1B FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: AG-EASY1B	pacchetto: -	Request a Quote	-	1200V (1.2kV)	-	-	-	-	-	-	-	Chassis Mount	Module	AG-EASY1B
FS03MR12A6MA1BBPSA1	Infineon Technologies	SIC 6N-CH 1200V AG-HYBRIDD FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 400A (Tj) Rds On (Max) @ Id, Vgs: 3.7mOhm @ 400A, 15V Vgs(th) (Max) @ Id: 5.55V @ 240mA Gate Charge (Qg) (Max) @ Vgs: 1320nC @ 15V Input Capacitance (Ciss) (Max) @ Vds: 42500pF @ 600V Power - Max: - Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: AG-HYBRIDD-2	pacchetto: -	Request a Quote	-	1200V (1.2kV)	400A (Tj)	3.7mOhm @ 400A, 15V	5.55V @ 240mA	1320nC @ 15V	42500pF @ 600V	-	-40°C ~ 150°C (TJ)	Chassis Mount	Module	AG-HYBRIDD-2
F3L8MR12W2M1HPB11BPSA1	Infineon Technologies	SIC 2N-CH 1200V 85A AG-EASY2B FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 85A (Tj) Rds On (Max) @ Id, Vgs: 12mOhm @ 100A, 18V Vgs(th) (Max) @ Id: 5.15V @ 40mA Gate Charge (Qg) (Max) @ Vgs: 297nC @ 18V Input Capacitance (Ciss) (Max) @ Vds: 8800pF @ 800V Power - Max: - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: AG-EASY2B	pacchetto: -	Azione135	-	1200V (1.2kV)	85A (Tj)	12mOhm @ 100A, 18V	5.15V @ 40mA	297nC @ 18V	8800pF @ 800V	-	-40°C ~ 175°C (TJ)	Chassis Mount	Module	AG-EASY2B
FF4MR12KM1HP	Infineon Technologies	MOSFET FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	pacchetto: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
IPG20N06S4L11ATMA2	Infineon Technologies	MOSFET 2N-CH 60V 20A 8TDSON FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 11.2mOhm @ 17A, 10V Vgs(th) (Max) @ Id: 2.2V @ 28µA Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4020pF @ 25V Power - Max: 65W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount, Wettable Flank Package / Case: 8-PowerVDFN Supplier Device Package: PG-TDSON-8-10	pacchetto: -	Azione128.976	Logic Level Gate	60V	20A (Tc)	11.2mOhm @ 17A, 10V	2.2V @ 28µA	53nC @ 10V	4020pF @ 25V	65W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount, Wettable Flank	8-PowerVDFN	PG-TDSON-8-10
DF11MR12W1M1HFB67BPSA1	Infineon Technologies	SIC 1200V AG-EASY1B FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: AG-EASY1B	pacchetto: -	Azione120	-	1200V (1.2kV)	-	-	-	-	-	-	-	Chassis Mount	Module	AG-EASY1B
DF14MR12W1M1HFB67BPSA1	Infineon Technologies	SIC 1200V AG-EASY1B FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: AG-EASY1B	pacchetto: -	Azione72	-	1200V (1.2kV)	-	-	-	-	-	-	-	Chassis Mount	Module	AG-EASY1B
IAUC45N04S6N070HATMA1	Infineon Technologies	MOSFET 2N-CH 40V 45A 8TDSON FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 45A (Tj) Rds On (Max) @ Id, Vgs: 7mOhm @ 22A, 10V Vgs(th) (Max) @ Id: 3V @ 9µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 701pF @ 25V Power - Max: 41W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: PG-TDSON-8-57	pacchetto: -	Azione60.237	-	40V	45A (Tj)	7mOhm @ 22A, 10V	3V @ 9µA	12nC @ 10V	701pF @ 25V	41W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerVDFN	PG-TDSON-8-57

IRF40H233XTMA1

Infineon Technologies

MOSFET 2N-CH 40V 8TDSON

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: PG-TDSON-8-900

pacchetto: -

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-

40V

-

Surface Mount

8-PowerTDFN

PG-TDSON-8-900

IRF7380QTRPBF

Infineon Technologies

MOSFET 2N-CH 80V 3.6A 8-SOIC

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 3.6A
Rds On (Max) @ Id, Vgs: 73mOhm @ 2.2A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 25V
Power - Max: 2W
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

pacchetto: -

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Logic Level Gate

80V

3.6A

73mOhm @ 2.2A, 10V

4V @ 250µA

23nC @ 10V

660pF @ 25V

2W

-

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

BSC072N04LDATMA1

Infineon Technologies

MOSFET 2N-CH 40V 20A 8TDSON

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 17A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 30µA
Gate Charge (Qg) (Max) @ Vgs: 52nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 3990pF @ 20V
Power - Max: 65W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Supplier Device Package: PG-TDSON-8-4

pacchetto: -

Azione41.562

Logic Level Gate

40V

20A (Tc)

7.2mOhm @ 17A, 10V

2.2V @ 30µA

52nC @ 10V

3990pF @ 20V

65W (Tc)

-55°C ~ 175°C (TJ)

Surface Mount

8-PowerVDFN

PG-TDSON-8-4

IRLHS6376TR2PBF

Infineon Technologies

MOSFET 2N-CH 30V 3.6A PQFN

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.6A
Rds On (Max) @ Id, Vgs: 63mOhm @ 3.4A, 4.5V
Vgs(th) (Max) @ Id: 1.1V @ 10µA
Gate Charge (Qg) (Max) @ Vgs: 2.8nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 25V
Power - Max: 1.5W
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 6-VDFN Exposed Pad
Supplier Device Package: 6-PQFN (2x2)

pacchetto: -

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Logic Level Gate

30V

3.6A

63mOhm @ 3.4A, 4.5V

1.1V @ 10µA

2.8nC @ 4.5V

270pF @ 25V

1.5W

-

Surface Mount

6-VDFN Exposed Pad

6-PQFN (2x2)

DF23MR12W1M1PB11BPSA1

Infineon Technologies

SIC 2N-CH 1200V 25A AG-EASY1B

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 25A (Tj)
Rds On (Max) @ Id, Vgs: 45mOhm @ 25A, 15V
Vgs(th) (Max) @ Id: 5.55V @ 10mA
Gate Charge (Qg) (Max) @ Vgs: 62nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds: 1840pF @ 800V
Power - Max: -
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: AG-EASY1B-2

pacchetto: -

Azione72

-

1200V (1.2kV)

25A (Tj)

45mOhm @ 25A, 15V

5.55V @ 10mA

62nC @ 15V

1840pF @ 800V

-

-40°C ~ 150°C (TJ)

Chassis Mount

Module

AG-EASY1B-2

FF1MR12KM1HPHPSA1

Infineon Technologies

MOSFET

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

pacchetto: -

Azione48

-

IQE220N15NM5CGSCATMA1

Infineon Technologies

TRENCH >=100V

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 150V
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 9-PowerWDFN
Supplier Device Package: PG-WHTFN-9

pacchetto: -

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-

150V

-

Surface Mount

9-PowerWDFN

PG-WHTFN-9

IRF7103QTRPBF

Infineon Technologies

MOSFET 2N-CH 50V 3A 8-SOIC

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 3A
Rds On (Max) @ Id, Vgs: 130mOhm @ 3A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 255pF @ 25V
Power - Max: 2.4W
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

pacchetto: -

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-

50V

3A

130mOhm @ 3A, 10V

3V @ 250µA

15nC @ 10V

255pF @ 25V

2.4W

-

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

IRF7313TRPBF-1

Infineon Technologies

MOSFET 2N-CH 30V 6.5A 8SOIC

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
Rds On (Max) @ Id, Vgs: 29mOhm @ 5.8A, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 25V
Power - Max: 2W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

pacchetto: -

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-

30V

6.5A (Ta)

29mOhm @ 5.8A, 10V

1V @ 250µA

33nC @ 10V

650pF @ 25V

2W (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

FD1400R12IP4DBOSA1

Infineon Technologies

MOSFET

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

pacchetto: -

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-

IAUC60N04S6N031HATMA1

Infineon Technologies

MOSFET 2N-CH 40V 60A 8TDSON

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 60A (Tj)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 30A, 10V
Vgs(th) (Max) @ Id: 3V @ 25µA
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1922pF @ 25V
Power - Max: 75W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Supplier Device Package: PG-TDSON-8-56

pacchetto: -

Azione28.929

-

40V

60A (Tj)

3.1mOhm @ 30A, 10V

3V @ 25µA

30nC @ 10V

1922pF @ 25V

75W (Tc)

-55°C ~ 175°C (TJ)

Surface Mount

8-PowerVDFN

PG-TDSON-8-56

IPG20N04S4L18AATMA1

Infineon Technologies

MOSFET 2N-CH 40V 20A 8TDSON

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 17A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 8µA
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1071pF @ 25V
Power - Max: 26W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerVDFN
Supplier Device Package: PG-TDSON-8-10

pacchetto: -

Azione14.310

-

40V

20A (Tc)

18mOhm @ 17A, 10V

2.2V @ 8µA

15nC @ 10V

1071pF @ 25V

26W (Tc)

-55°C ~ 175°C (TJ)

Surface Mount, Wettable Flank

8-PowerVDFN

PG-TDSON-8-10

IRF7307QTRPBF

Infineon Technologies

MOSFET N/P-CH 20V 5.2A/4.3A 8SO

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5.2A, 4.3A
Rds On (Max) @ Id, Vgs: 50mOhm @ 2.6A, 4.5V
Vgs(th) (Max) @ Id: 700mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 15V
Power - Max: 2W
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

pacchetto: -

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Logic Level Gate

20V

5.2A, 4.3A

50mOhm @ 2.6A, 4.5V

700mV @ 250µA

20nC @ 4.5V

660pF @ 15V

2W

-

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

IRF7341QTRPBF

Infineon Technologies

MOSFET 2N-CH 55V 5.1A 8-SOIC

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 5.1A
Rds On (Max) @ Id, Vgs: 50mOhm @ 5.1A, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 780pF @ 25V
Power - Max: 2.4W
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

pacchetto: -

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Logic Level Gate

55V

5.1A

50mOhm @ 5.1A, 10V

1V @ 250µA (Min)

44nC @ 10V

780pF @ 25V

2.4W

-

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

BSO220N03MDGXUMA1

Infineon Technologies

MOSFET 2N-CH 30V 6A 8DSO

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6A
Rds On (Max) @ Id, Vgs: 22mOhm @ 7.7A, 10V
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 15V
Power - Max: 1.4W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: PG-DSO-8

pacchetto: -

Azione45.426

Logic Level Gate

30V

6A

22mOhm @ 7.7A, 10V

2.1V @ 250µA

10nC @ 10V

800pF @ 15V

1.4W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

PG-DSO-8

F445MR12W1M1B76BPSA1

Infineon Technologies

SIC 4N-CH 1200V 25A AG-EASY1B

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 25A (Tj)
Rds On (Max) @ Id, Vgs: 45mOhm @ 25A, 15V
Vgs(th) (Max) @ Id: 5.55V @ 10mA
Gate Charge (Qg) (Max) @ Vgs: 62nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds: 1840pF @ 800V
Power - Max: -
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: AG-EASY1B-2

pacchetto: -

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-

1200V (1.2kV)

25A (Tj)

45mOhm @ 25A, 15V

5.55V @ 10mA

62nC @ 15V

1840pF @ 800V

-

-40°C ~ 150°C (TJ)

Chassis Mount

Module

AG-EASY1B-2

IQE220N15NM5SCATMA1

Infineon Technologies

TRENCH >=100V

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 150V
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Supplier Device Package: PG-WHSON-8

pacchetto: -

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-

150V

-

Surface Mount

8-PowerWDFN

PG-WHSON-8

FF11MR12W1M1B70BPSA1

Infineon Technologies

SIC 2N-CH 1200V AG-EASY1B

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 100A (Tj)
Rds On (Max) @ Id, Vgs: 11.3mOhm @ 100A, 15V
Vgs(th) (Max) @ Id: 5.55V @ 40mA
Gate Charge (Qg) (Max) @ Vgs: 248nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds: 7360pF @ 800V
Power - Max: -
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: AG-EASY1B

pacchetto: -

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-

1200V (1.2kV)

100A (Tj)

11.3mOhm @ 100A, 15V

5.55V @ 40mA

248nC @ 15V

7360pF @ 800V

-

-40°C ~ 150°C (TJ)

Chassis Mount

Module

AG-EASY1B

64-2013PBF

Infineon Technologies

MOSFET

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

pacchetto: -

Request a Quote

-

FF11MR12W1M1PB11BPSA1

Infineon Technologies

SIC 2N-CH 1200V AG-EASY1B-2

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 100A (Tj)
Rds On (Max) @ Id, Vgs: 11.3mOhm @ 100A, 15V
Vgs(th) (Max) @ Id: 5.55V @ 40mA
Gate Charge (Qg) (Max) @ Vgs: 248nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds: 7360pF @ 800V
Power - Max: -
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: AG-EASY1B-2

pacchetto: -

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-

1200V (1.2kV)

100A (Tj)

11.3mOhm @ 100A, 15V

5.55V @ 40mA

248nC @ 15V

7360pF @ 800V

-

-40°C ~ 150°C (TJ)

Chassis Mount

Module

AG-EASY1B-2

IAUC45N04S6L063HATMA1

Infineon Technologies

MOSFET 2N-CH 40V 45A 8TDSON

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 45A (Tj)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 22A, 10V
Vgs(th) (Max) @ Id: 2V @ 9µA
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 775pF @ 25V
Power - Max: 41W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Supplier Device Package: PG-TDSON-8-57

pacchetto: -

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Logic Level Gate

40V

45A (Tj)

6.3mOhm @ 22A, 10V

2V @ 9µA

13nC @ 10V

775pF @ 25V

41W (Tc)

-55°C ~ 175°C (TJ)

Surface Mount

8-PowerVDFN

PG-TDSON-8-57

FF11MR12W2M1HPB11BPSA1

Infineon Technologies

MOSFET 1200V

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

pacchetto: -

Azione54

-

1200V (1.2kV)

-

FF8MR12W1M1HB11BPSA1

Infineon Technologies

SIC 1200V AG-EASY1B

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: AG-EASY1B

pacchetto: -

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-

1200V (1.2kV)

-

Chassis Mount

Module

AG-EASY1B

FS03MR12A6MA1BBPSA1

Infineon Technologies

SIC 6N-CH 1200V AG-HYBRIDD

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 400A (Tj)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 400A, 15V
Vgs(th) (Max) @ Id: 5.55V @ 240mA
Gate Charge (Qg) (Max) @ Vgs: 1320nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds: 42500pF @ 600V
Power - Max: -
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: AG-HYBRIDD-2

pacchetto: -

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-

1200V (1.2kV)

400A (Tj)

3.7mOhm @ 400A, 15V

5.55V @ 240mA

1320nC @ 15V

42500pF @ 600V

-

-40°C ~ 150°C (TJ)

Chassis Mount

Module

AG-HYBRIDD-2

F3L8MR12W2M1HPB11BPSA1

Infineon Technologies

SIC 2N-CH 1200V 85A AG-EASY2B

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 85A (Tj)
Rds On (Max) @ Id, Vgs: 12mOhm @ 100A, 18V
Vgs(th) (Max) @ Id: 5.15V @ 40mA
Gate Charge (Qg) (Max) @ Vgs: 297nC @ 18V
Input Capacitance (Ciss) (Max) @ Vds: 8800pF @ 800V
Power - Max: -
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: AG-EASY2B

pacchetto: -

Azione135

-

1200V (1.2kV)

85A (Tj)

12mOhm @ 100A, 18V

5.15V @ 40mA

297nC @ 18V

8800pF @ 800V

-

-40°C ~ 175°C (TJ)

Chassis Mount

Module

AG-EASY2B

FF4MR12KM1HP

Infineon Technologies

MOSFET

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

pacchetto: -

Request a Quote

-

IPG20N06S4L11ATMA2

Infineon Technologies

MOSFET 2N-CH 60V 20A 8TDSON

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 11.2mOhm @ 17A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 28µA
Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 4020pF @ 25V
Power - Max: 65W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerVDFN
Supplier Device Package: PG-TDSON-8-10

pacchetto: -

Azione128.976

Logic Level Gate

60V

20A (Tc)

11.2mOhm @ 17A, 10V

2.2V @ 28µA

53nC @ 10V

4020pF @ 25V

65W (Tc)

-55°C ~ 175°C (TJ)

Surface Mount, Wettable Flank

8-PowerVDFN

PG-TDSON-8-10

DF11MR12W1M1HFB67BPSA1

Infineon Technologies

SIC 1200V AG-EASY1B

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: AG-EASY1B

pacchetto: -

Azione120

-

1200V (1.2kV)

-

Chassis Mount

Module

AG-EASY1B

DF14MR12W1M1HFB67BPSA1

Infineon Technologies

SIC 1200V AG-EASY1B

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: AG-EASY1B

pacchetto: -

Azione72

-

1200V (1.2kV)

-

Chassis Mount

Module

AG-EASY1B

IAUC45N04S6N070HATMA1

Infineon Technologies

MOSFET 2N-CH 40V 45A 8TDSON

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 45A (Tj)
Rds On (Max) @ Id, Vgs: 7mOhm @ 22A, 10V
Vgs(th) (Max) @ Id: 3V @ 9µA
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 701pF @ 25V
Power - Max: 41W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Supplier Device Package: PG-TDSON-8-57

pacchetto: -

Azione60.237

-

40V

45A (Tj)

7mOhm @ 22A, 10V

3V @ 9µA

12nC @ 10V

701pF @ 25V

41W (Tc)

-55°C ~ 175°C (TJ)

Surface Mount

8-PowerVDFN

PG-TDSON-8-57