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Infineon Technologies |
IGBT 1000V 85A 320W TO247AD
- IGBT Type: Trench
- Voltage - Collector Emitter Breakdown (Max): 1000V
- Current - Collector (Ic) (Max): 85A
- Current - Collector Pulsed (Icm): 90A
- Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A
- Power - Max: 320W
- Switching Energy: 2.11mJ (on), 1.18mJ (off)
- Input Type: Standard
- Gate Charge: 157nC
- Td (on/off) @ 25°C: 25ns/229ns
- Test Condition: 600V, 30A, 10 Ohm, 15V
- Reverse Recovery Time (trr): 153ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247AD
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pacchetto: TO-247-3 |
Azione2.100 |
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Infineon Technologies |
IGBT 1200V 85A COPAK247
- IGBT Type: Trench
- Voltage - Collector Emitter Breakdown (Max): 1200V
- Current - Collector (Ic) (Max): 85A
- Current - Collector Pulsed (Icm): 200A
- Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A
- Power - Max: 313W
- Switching Energy: 1.21mJ (off)
- Input Type: Standard
- Gate Charge: 180nC
- Td (on/off) @ 25°C: -/270ns
- Test Condition: 600V, 30A, 10 Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247AD
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pacchetto: TO-247-3 |
Azione3.312 |
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Infineon Technologies |
IGBT 330V 28A 43W TO220ABFP
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 330V
- Current - Collector (Ic) (Max): 28A
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: 1.55V @ 15V, 28A
- Power - Max: 43W
- Switching Energy: -
- Input Type: Standard
- Gate Charge: -
- Td (on/off) @ 25°C: 39ns/120ns
- Test Condition: -
- Reverse Recovery Time (trr): -
- Operating Temperature: -
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220AB
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pacchetto: TO-220-3 |
Azione3.296 |
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Infineon Technologies |
MOSFET N-CH 200V 13.5A TO220-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200V
- Current - Continuous Drain (Id) @ 25°C: 13.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 5V
- Vgs(th) (Max) @ Id: 2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 95W (Tc)
- Rds On (Max) @ Id, Vgs: 200 mOhm @ 7A, 5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO-220-3
- Package / Case: TO-220-3
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pacchetto: TO-220-3 |
Azione426.384 |
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Infineon Technologies |
MOSFET N-CH 600V 11A TO-247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5.5V @ 500µA
- Gate Charge (Qg) (Max) @ Vgs: 54nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1460pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 125W (Tc)
- Rds On (Max) @ Id, Vgs: 380 mOhm @ 7A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO247-3
- Package / Case: TO-247-3
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pacchetto: TO-247-3 |
Azione3.392 |
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Infineon Technologies |
MOSFET N-CH 30V 6.5A 8-SOIC
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 25V
- Vgs (Max): ±20V
- FET Feature: Schottky Diode (Isolated)
- Power Dissipation (Max): 2W (Ta)
- Rds On (Max) @ Id, Vgs: 32 mOhm @ 5.8A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SO
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
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pacchetto: 8-SOIC (0.154", 3.90mm Width) |
Azione28.284 |
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Infineon Technologies |
MOSFET N-CH 20V 60A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.55V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1190pF @ 10V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 48W (Tc)
- Rds On (Max) @ Id, Vgs: 8.4 mOhm @ 15A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D-Pak
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Azione7.152 |
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Infineon Technologies |
MOSFET N-CH 20V 36A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.55V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 7.2nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 10V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 35W (Tc)
- Rds On (Max) @ Id, Vgs: 16 mOhm @ 15A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Azione391.824 |
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Infineon Technologies |
MOSFET N-CH 20V 92A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 92A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.45V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 24nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 2150pF @ 10V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 79W (Tc)
- Rds On (Max) @ Id, Vgs: 6 mOhm @ 15A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Azione395.220 |
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Infineon Technologies |
MOSFET N-CH 25V 22A 2WDSON
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 25V
- Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 69A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1862pF @ 12V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.2W (Ta), 28W (Tc)
- Rds On (Max) @ Id, Vgs: 3.5 mOhm @ 30A, 10V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: MG-WDSON-2, CanPAK M?
- Package / Case: 3-WDSON
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pacchetto: 3-WDSON |
Azione6.080 |
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Infineon Technologies |
MOSFET N-CH 650V 20.2A TO220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650V
- Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.5V @ 730µA
- Gate Charge (Qg) (Max) @ Vgs: 73nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1620pF @ 100V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 151W (Tc)
- Rds On (Max) @ Id, Vgs: 190 mOhm @ 7.3A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO-220-3
- Package / Case: TO-220-3
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pacchetto: TO-220-3 |
Azione6.400 |
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Infineon Technologies |
IC FET RF LDMOS 60W H-37265-2
- Transistor Type: LDMOS
- Frequency: 2.14GHz
- Gain: 16dB
- Voltage - Test: 28V
- Current Rating: 10µA
- Noise Figure: -
- Current - Test: 550mA
- Power - Output: 12W
- Voltage - Rated: 65V
- Package / Case: 2-Flatpack, Fin Leads, Flanged
- Supplier Device Package: H-37265-2
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pacchetto: 2-Flatpack, Fin Leads, Flanged |
Azione3.216 |
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Infineon Technologies |
MOSFET 2N-CH 30V 8A/11A 8-SOIC
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 8A, 11A
- Rds On (Max) @ Id, Vgs: 15.5 mOhm @ 8A, 10V
- Vgs(th) (Max) @ Id: 2.35V @ 25µA
- Gate Charge (Qg) (Max) @ Vgs: 8.6nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 766pF @ 15V
- Power - Max: 1.5W, 2.4W
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
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pacchetto: 8-SOIC (0.154", 3.90mm Width) |
Azione180.408 |
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Infineon Technologies |
TRANSISTOR RF NPN AMP SOT-343
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 6.1V
- Frequency - Transition: 900MHz
- Noise Figure (dB Typ @ f): 1.2dB ~ 2.4dB @ 900MHz ~ 3.5GHz
- Gain: 27dB
- Power - Max: 600mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 90mA, 5V
- Current - Collector (Ic) (Max): 120mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-82A, SOT-343
- Supplier Device Package: SOT343-4-2
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pacchetto: SC-82A, SOT-343 |
Azione5.440 |
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Infineon Technologies |
DIODE VAR CAP 30V 20MA SCD-80
- Capacitance @ Vr, F: 2.2pF @ 28V, 1MHz
- Capacitance Ratio: 11
- Capacitance Ratio Condition: C1/C28
- Voltage - Peak Reverse (Max): 30V
- Diode Type: Single
- Q @ Vr, F: -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-80
- Supplier Device Package: PG-SCD80-2
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pacchetto: SC-80 |
Azione3.536 |
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Infineon Technologies |
DIODE SCHOTTKY 650V 6A VSON-4
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 650V
- Current - Average Rectified (Io): 6A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.7V @ 6A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 110µA @ 650V
- Capacitance @ Vr, F: 190pF @ 1V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: 4-PowerTSFN
- Supplier Device Package: PG-VSON-4
- Operating Temperature - Junction: -55°C ~ 150°C
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pacchetto: 4-PowerTSFN |
Azione7.568 |
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Infineon Technologies |
DIODE GEN PURP 600V 52.3A TO220
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 52.3A (DC)
- Voltage - Forward (Vf) (Max) @ If: 2V @ 30A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 126ns
- Current - Reverse Leakage @ Vr: 50µA @ 600V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: PG-TO220-2
- Operating Temperature - Junction: -55°C ~ 175°C
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pacchetto: TO-220-2 |
Azione7.312 |
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Infineon Technologies |
IC REG BUCK ADJ 40A SYNC LGA
- Function: Step-Down
- Output Configuration: Positive
- Topology: Buck
- Output Type: Adjustable
- Number of Outputs: 1
- Voltage - Input (Min): 3V
- Voltage - Input (Max): 13.2V
- Voltage - Output (Min/Fixed): 0.8V
- Voltage - Output (Max): 3.3V
- Current - Output: 40A
- Frequency - Switching: 300kHz ~ 1MHz
- Synchronous Rectifier: Yes
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: Power Block (LGA)
- Supplier Device Package: LGA (11x11)
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pacchetto: Power Block (LGA) |
Azione5.008 |
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Infineon Technologies |
IC SWITCH HISIDE SMART TO220-7
- Switch Type: General Purpose
- Number of Outputs: 2
- Ratio - Input:Output: 1:1
- Output Configuration: High Side
- Output Type: N-Channel
- Interface: On/Off
- Voltage - Load: 5 V ~ 34 V
- Voltage - Supply (Vcc/Vdd): Not Required
- Current - Output (Max): 1.8A
- Rds On (Typ): 160 mOhm
- Input Type: Non-Inverting
- Features: Auto Restart, Status Flag
- Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
- Operating Temperature: -30°C ~ 85°C (TA)
- Package / Case: TO-220-7
- Supplier Device Package: PG-TO220-7
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pacchetto: TO-220-7 |
Azione2.288 |
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Infineon Technologies |
IC SW SMART 16-CH LOWSIDE PDSO36
- Switch Type: General Purpose
- Number of Outputs: 16
- Ratio - Input:Output: 1:1
- Output Configuration: Low Side
- Output Type: N-Channel
- Interface: SPI
- Voltage - Load: 45V (Max)
- Voltage - Supply (Vcc/Vdd): 4.5 V ~ 5.5 V
- Current - Output (Max): -
- Rds On (Typ): 300 mOhm, 350 mOhm, 1 Ohm
- Input Type: -
- Features: Status Flag
- Fault Protection: Open Load Detect, Over Temperature, Over Voltage
- Operating Temperature: -40°C ~ 150°C (TJ)
- Package / Case: 36-BSSOP (0.433", 11.00mm Width) Exposed Pad
- Supplier Device Package: PG-DSO-36
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pacchetto: 36-BSSOP (0.433", 11.00mm Width) Exposed Pad |
Azione30.408 |
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Infineon Technologies |
IC PWR SW HI-SIDE 1CH 14DSO
- Switch Type: General Purpose
- Number of Outputs: 1
- Ratio - Input:Output: 1:1
- Output Configuration: High Side
- Output Type: N-Channel
- Interface: On/Off
- Voltage - Load: 5 V ~ 36 V
- Voltage - Supply (Vcc/Vdd): Not Required
- Current - Output (Max): 6A
- Rds On (Typ): 31 mOhm
- Input Type: Non-Inverting
- Features: -
- Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
- Operating Temperature: -40°C ~ 150°C (TJ)
- Package / Case: 14-SOIC (0.154", 3.90mm Width) Exposed Pad
- Supplier Device Package: PG-DSO-14-47-EP
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pacchetto: 14-SOIC (0.154", 3.90mm Width) Exposed Pad |
Azione4.352 |
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Infineon Technologies |
IC MOTOR DRIVER PAR 14SOIC
- Motor Type - Stepper: -
- Motor Type - AC, DC: Brushed DC
- Function: Driver - Fully Integrated, Control and Power Stage
- Output Configuration: Half Bridge (2)
- Interface: Parallel
- Technology: Bipolar
- Step Resolution: -
- Applications: Automotive
- Current - Output: 800mA
- Voltage - Supply: 8 V ~ 18 V
- Voltage - Load: 8 V ~ 18 V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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pacchetto: - |
Azione2.432 |
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Infineon Technologies |
IC MOSFET DRIVER
- Driven Configuration: -
- Channel Type: -
- Number of Drivers: -
- Gate Type: -
- Voltage - Supply: -
- Logic Voltage - VIL, VIH: -
- Current - Peak Output (Source, Sink): -
- Input Type: -
- High Side Voltage - Max (Bootstrap): -
- Rise / Fall Time (Typ): -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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pacchetto: - |
Azione3.584 |
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Infineon Technologies |
IC IGBT DVR 1200V 8DSO
- Driven Configuration: High-Side or Low-Side
- Channel Type: Single
- Number of Drivers: 1
- Gate Type: IGBT
- Voltage - Supply: 13 V ~ 18 V
- Logic Voltage - VIL, VIH: 1.5V, 3.5V
- Current - Peak Output (Source, Sink): 3.5A, 3.2A
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): 1200V
- Rise / Fall Time (Typ): 10ns, 9ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.295", 7.50mm Width)
- Supplier Device Package: 8-DSO
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pacchetto: 8-SOIC (0.295", 7.50mm Width) |
Azione6.880 |
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Infineon Technologies |
IC CODEC VOIP LBGA-176
- Function: Analog Voice Access
- Interface: ADPCM
- Number of Circuits: 4
- Voltage - Supply: -
- Current - Supply: -
- Power (Watts): 400mW
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Surface Mount
- Package / Case: 176-LBGA
- Supplier Device Package: PG-LBGA-176
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pacchetto: 176-LBGA |
Azione4.160 |
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Infineon Technologies |
IC LIN TRANSCEIVER DSO-8
- Type: Transceiver
- Protocol: CAN
- Number of Drivers/Receivers: -
- Duplex: -
- Receiver Hysteresis: -
- Data Rate: -
- Voltage - Supply: 3.3V, 5V
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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pacchetto: - |
Azione5.184 |
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Infineon Technologies |
IC MCU 8BIT 32KB FLASH 64LQFP
- Core Processor: XC800
- Core Size: 8-Bit
- Speed: 24MHz
- Connectivity: CAN, LIN, SSI, UART/USART
- Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
- Number of I/O: 48
- Program Memory Size: 32KB (32K x 8)
- Program Memory Type: FLASH
- EEPROM Size: -
- RAM Size: 1.75K x 8
- Voltage - Supply (Vcc/Vdd): 4.5 V ~ 5.5 V
- Data Converters: A/D 8x10b
- Oscillator Type: Internal
- Operating Temperature: -40°C ~ 125°C (TA)
- Mounting Type: -
- Package / Case: 64-LQFP
- Supplier Device Package: -
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pacchetto: 64-LQFP |
Azione4.752 |
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Infineon Technologies |
IC HALL EFFECT LATCH SOT23-3
- Function: -
- Technology: -
- Polarization: -
- Sensing Range: -
- Test Condition: -
- Voltage - Supply: -
- Current - Supply (Max): -
- Current - Output (Max): -
- Output Type: -
- Features: -
- Operating Temperature: -
- Package / Case: -
- Supplier Device Package: -
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pacchetto: - |
Azione6.678 |
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Infineon Technologies |
IC REG CTRLR BUCK 14DSOP
- Output Type: -
- Function: -
- Output Configuration: -
- Topology: -
- Number of Outputs: -
- Output Phases: -
- Voltage - Supply (Vcc/Vdd): -
- Frequency - Switching: -
- Duty Cycle (Max): -
- Synchronous Rectifier: -
- Clock Sync: -
- Serial Interfaces: -
- Control Features: -
- Operating Temperature: -
- Package / Case: -
- Supplier Device Package: -
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pacchetto: - |
Azione6.496 |
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Infineon Technologies |
IC MCU 32BIT 4MB FLASH 176TQFP
- Core Processor: -
- Core Size: -
- Speed: -
- Connectivity: -
- Peripherals: -
- Number of I/O: -
- Program Memory Size: -
- Program Memory Type: -
- EEPROM Size: -
- RAM Size: -
- Voltage - Supply (Vcc/Vdd): -
- Data Converters: -
- Oscillator Type: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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pacchetto: - |
Azione5.408 |
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