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Infineon Technologies |
IGBT 600V 12A 77W D2PAK
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 600V
- Current - Collector (Ic) (Max): 12A
- Current - Collector Pulsed (Icm): 18A
- Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 6A
- Power - Max: 77W
- Switching Energy: 56µJ (on), 122µJ (off)
- Input Type: Standard
- Gate Charge: 19.5nC
- Td (on/off) @ 25°C: 27ns/75ns
- Test Condition: 400V, 6A, 47 Ohm, 15V
- Reverse Recovery Time (trr): 74ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: D2PAK
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pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Azione4.224 |
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Infineon Technologies |
IGBT 600V 20A 110W TO220-3
- IGBT Type: NPT, Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 600V
- Current - Collector (Ic) (Max): 20A
- Current - Collector Pulsed (Icm): 30A
- Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 10A
- Power - Max: 110W
- Switching Energy: 430µJ
- Input Type: Standard
- Gate Charge: 62nC
- Td (on/off) @ 25°C: 12ns/215ns
- Test Condition: 400V, 10A, 23 Ohm, 15V
- Reverse Recovery Time (trr): 115ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: PG-TO220-3
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pacchetto: TO-220-3 |
Azione8.460 |
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Infineon Technologies |
MOSFET N-CH 30V 8.3A 8-SOIC
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 8.3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 17nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta)
- Rds On (Max) @ Id, Vgs: 25 mOhm @ 7A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SO
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
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pacchetto: 8-SOIC (0.154", 3.90mm Width) |
Azione33.000 |
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Infineon Technologies |
MOSFET N-CH 55V 80A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55V
- Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 240µA
- Gate Charge (Qg) (Max) @ Vgs: 187nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3660pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 300W (Tc)
- Rds On (Max) @ Id, Vgs: 7.7 mOhm @ 80A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO263-3-2
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Azione7.488 |
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Infineon Technologies |
MOSFET N-CH 30V 44A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 20nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 1650pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 62W (Tc)
- Rds On (Max) @ Id, Vgs: 16 mOhm @ 15A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D-Pak
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Azione4.432 |
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Infineon Technologies |
MOSFET N-CH 60V 84A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 84A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3210pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 200W (Tc)
- Rds On (Max) @ Id, Vgs: 12 mOhm @ 50A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Azione5.808 |
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Infineon Technologies |
MOSFET N-CH 650V 8.7A TO262
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650V
- Current - Continuous Drain (Id) @ 25°C: 8.7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 340µA
- Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 100V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 83.3W (Tc)
- Rds On (Max) @ Id, Vgs: 420 mOhm @ 3.4A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO262-3
- Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
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pacchetto: TO-262-3 Long Leads, I2Pak, TO-262AA |
Azione4.544 |
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Infineon Technologies |
MOSFET N-CH 30V 150A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 47nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 4170pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 140W (Tc)
- Rds On (Max) @ Id, Vgs: 3.8 mOhm @ 38A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Azione7.008 |
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Infineon Technologies |
MOSFET N-CH TO263-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 250V
- Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 54µA
- Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 107W (Tc)
- Rds On (Max) @ Id, Vgs: 100 mOhm @ 17A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO263-3-2
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Azione3.472 |
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Infineon Technologies |
MOSFET N-CH 30V 30A 8SON
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 52nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3400pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.1W (Ta), 69W (Tc)
- Rds On (Max) @ Id, Vgs: 1.5 mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TSDSON-8-FL
- Package / Case: 8-PowerTDFN
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pacchetto: 8-PowerTDFN |
Azione2.192 |
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Infineon Technologies |
MOSFET N-CH 150V 23A TO-220AB
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 150V
- Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 94W (Tc)
- Rds On (Max) @ Id, Vgs: 70 mOhm @ 12A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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pacchetto: TO-220-3 |
Azione6.300 |
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Infineon Technologies |
MOSFET N-CH 800V 17A TO220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800V
- Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.5V @ 360µA
- Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 500V
- Vgs (Max): ±20V
- FET Feature: Super Junction
- Power Dissipation (Max): 30W (Tc)
- Rds On (Max) @ Id, Vgs: 280 mOhm @ 7.2A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220-3F
- Package / Case: TO-220-3 Full Pack
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pacchetto: TO-220-3 Full Pack |
Azione8.640 |
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Infineon Technologies |
MOSFET N-CH 800V 54.9A TO-247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800V
- Current - Continuous Drain (Id) @ 25°C: 54.9A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.9V @ 3.3mA
- Gate Charge (Qg) (Max) @ Vgs: 288nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 7520pF @ 100V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 500W (Tc)
- Rds On (Max) @ Id, Vgs: 85 mOhm @ 32.6A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO247-3
- Package / Case: TO-247-3
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pacchetto: TO-247-3 |
Azione16.032 |
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Infineon Technologies |
MOSFET N/P-CH 20V 8TDSON
- FET Type: N and P-Channel Complementary
- FET Feature: Logic Level Gate, 2.5V Drive
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 5.1A, 3.2A
- Rds On (Max) @ Id, Vgs: 55 mOhm @ 5.1A, 4.5V
- Vgs(th) (Max) @ Id: 1.4V @ 110µA
- Gate Charge (Qg) (Max) @ Vgs: 2.8nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 419pF @ 10V
- Power - Max: 2.5W
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerTDFN
- Supplier Device Package: PG-TSDSON-8-FL
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pacchetto: 8-PowerTDFN |
Azione2.048 |
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Infineon Technologies |
TRANS NPN 30V 0.1A SOT-23
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 30V
- Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
- Current - Collector Cutoff (Max): 15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
- Power - Max: 330mW
- Frequency - Transition: 250MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: PG-SOT23-3
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pacchetto: TO-236-3, SC-59, SOT-23-3 |
Azione5.952 |
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Infineon Technologies |
DIODE TUNING 7V 20MA TSLP-2
- Capacitance @ Vr, F: 1.45pF @ 4V, 1MHz
- Capacitance Ratio: 2.1
- Capacitance Ratio Condition: C1/C4
- Voltage - Peak Reverse (Max): 7V
- Diode Type: Single
- Q @ Vr, F: -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOD-882
- Supplier Device Package: PG-TSLP-2
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pacchetto: SOD-882 |
Azione2.128 |
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Infineon Technologies |
DIODE GEN PURP 600V 22.5A WAFER
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 22.5A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.6V @ 22.5A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 27µA @ 600V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Sawn on foil
- Operating Temperature - Junction: -40°C ~ 150°C
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pacchetto: Die |
Azione3.568 |
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Infineon Technologies |
IC DIODE EMITTER CTLR WAFER
- Diode Type: -
- Voltage - DC Reverse (Vr) (Max): -
- Current - Average Rectified (Io): -
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: -
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: -
- Capacitance @ Vr, F: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
- Operating Temperature - Junction: -
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pacchetto: - |
Azione6.816 |
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Infineon Technologies |
DIODE ARRAY SCHOTTKY 4V TSLP4
- Diode Configuration: 2 Independent
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 4V
- Current - Average Rectified (Io) (per Diode): 110mA (DC)
- Voltage - Forward (Vf) (Max) @ If: 410mV @ 10mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: -
- Operating Temperature - Junction: 150°C (Max)
- Mounting Type: Surface Mount
- Package / Case: 4-XFDFN
- Supplier Device Package: PG-TSLP-4
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pacchetto: 4-XFDFN |
Azione6.016 |
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Infineon Technologies |
IC DRIVER SPI 8CH LS 24SSOP
- Switch Type: General Purpose
- Number of Outputs: 8
- Ratio - Input:Output: 1:2
- Output Configuration: Low Side
- Output Type: N-Channel
- Interface: SPI
- Voltage - Load: 4.5 V ~ 5.5 V
- Voltage - Supply (Vcc/Vdd): 3 V ~ 5.5 V
- Current - Output (Max): 210mA
- Rds On (Typ): 1.5 Ohm
- Input Type: -
- Features: -
- Fault Protection: Open Load Detect, Over Temperature
- Operating Temperature: -40°C ~ 150°C (TJ)
- Package / Case: 24-SSOP (0.154", 3.90mm Width)
- Supplier Device Package: PG-SSOP-24
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pacchetto: 24-SSOP (0.154", 3.90mm Width) |
Azione1.723.572 |
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Infineon Technologies |
IC PFC CONTROLLER DCM 8DIP
- Mode: Discontinuous Conduction (DCM)
- Frequency - Switching: -
- Current - Startup: -
- Voltage - Supply: 11 V ~ 19 V
- Operating Temperature: -40°C ~ 150°C
- Mounting Type: Through Hole
- Package / Case: 8-DIP (0.300", 7.62mm)
- Supplier Device Package: P-DIP-8
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pacchetto: 8-DIP (0.300", 7.62mm) |
Azione5.646.144 |
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Infineon Technologies |
IC PFC ONE CYCLE CONTROL 8SOIC
- Mode: Continuous Conduction (CCM)
- Frequency - Switching: Adjustable
- Current - Startup: 175µA
- Voltage - Supply: 12 V ~ 19 V
- Operating Temperature: -25°C ~ 125°C
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
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pacchetto: 8-SOIC (0.154", 3.90mm Width) |
Azione231.888 |
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Infineon Technologies |
IC DRIVER HIGH/LOW SIDE 14SOIC
- Driven Configuration: Half-Bridge
- Channel Type: Independent
- Number of Drivers: 2
- Gate Type: IGBT, N-Channel MOSFET
- Voltage - Supply: 10 V ~ 20 V
- Logic Voltage - VIL, VIH: 0.8V, 2.7V
- Current - Peak Output (Source, Sink): 1.9A, 2.3A
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): 600V
- Rise / Fall Time (Typ): 40ns, 20ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 14-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 14-SOIC
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pacchetto: 14-SOIC (0.154", 3.90mm Width) |
Azione232.968 |
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Infineon Technologies |
IC DRIVER BRIDGE 3PHASE 28-SOIC
- Driven Configuration: Half-Bridge
- Channel Type: 3-Phase
- Number of Drivers: 6
- Gate Type: IGBT, N-Channel MOSFET
- Voltage - Supply: 11.5 V ~ 20 V
- Logic Voltage - VIL, VIH: 0.8V, 2.5V
- Current - Peak Output (Source, Sink): 200mA, 350mA
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): 600V
- Rise / Fall Time (Typ): 125ns, 50ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 28-SOIC (0.295", 7.50mm Width)
- Supplier Device Package: 28-SOIC
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pacchetto: 28-SOIC (0.295", 7.50mm Width) |
Azione66.000 |
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Infineon Technologies |
IC MIXER/OSC/PLL DIGITAL VQFN-48
- Type: Tuner
- Applications: NTSC, PAL
- Mounting Type: Surface Mount
- Package / Case: 48-VFQFN Exposed Pad
- Supplier Device Package: PG-VQFN-48
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pacchetto: 48-VFQFN Exposed Pad |
Azione5.264 |
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Infineon Technologies |
IC MCU 16BIT ROMLESS 100MQFP
- Core Processor: C166
- Core Size: 16-Bit
- Speed: 20MHz
- Connectivity: EBI/EMI, I2C, SPI, UART/USART
- Peripherals: POR, PWM, WDT
- Number of I/O: 76
- Program Memory Size: -
- Program Memory Type: ROMless
- EEPROM Size: -
- RAM Size: 3K x 8
- Voltage - Supply (Vcc/Vdd): 3 V ~ 3.6 V
- Data Converters: A/D 4x10b
- Oscillator Type: Internal
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: -
- Package / Case: 100-BQFP
- Supplier Device Package: 100-MQFP (14x20)
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pacchetto: 100-BQFP |
Azione2.432 |
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Infineon Technologies |
IC MCU 32BIT 128KB FLASH 48VQFN
- Core Processor: ARM? Cortex?-M0
- Core Size: 32-Bit
- Speed: 48MHz
- Connectivity: I2C, LIN, SPI, UART/USART
- Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
- Number of I/O: 34
- Program Memory Size: 128KB (128K x 8)
- Program Memory Type: FLASH
- EEPROM Size: -
- RAM Size: 16K x 8
- Voltage - Supply (Vcc/Vdd): 1.8 V ~ 5.5 V
- Data Converters: A/D 12x12b
- Oscillator Type: Internal
- Operating Temperature: -40°C ~ 105°C (TA)
- Mounting Type: -
- Package / Case: 48-VFQFN Exposed Pad
- Supplier Device Package: PG-VQFN-48-73
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pacchetto: 48-VFQFN Exposed Pad |
Azione5.648 |
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Infineon Technologies |
IC MCU 32BIT 128KB FLASH 40VQFN
- Core Processor: ARM? Cortex?-M0
- Core Size: 32-Bit
- Speed: 32MHz
- Connectivity: I2C, LIN, SPI, UART/USART
- Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
- Number of I/O: 27
- Program Memory Size: 128KB (128K x 8)
- Program Memory Type: FLASH
- EEPROM Size: -
- RAM Size: 16K x 8
- Voltage - Supply (Vcc/Vdd): 1.8 V ~ 5.5 V
- Data Converters: A/D 16x12b
- Oscillator Type: Internal
- Operating Temperature: -40°C ~ 105°C (TA)
- Mounting Type: -
- Package / Case: 40-VFQFN Exposed Pad
- Supplier Device Package: PG-VQFN-40-13
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pacchetto: 40-VFQFN Exposed Pad |
Azione7.040 |
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Infineon Technologies |
IC EEPROM 770BYTE MCC2-2
- Applications: Security
- Core Processor: -
- Program Memory Type: -
- Controller Series: -
- RAM Size: -
- Interface: -
- Number of I/O: -
- Voltage - Supply: -
- Operating Temperature: -
- Mounting Type: Surface Mount
- Package / Case: M2.2 Chip Card Module
- Supplier Device Package: M2.2 Chip Card Module
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pacchetto: M2.2 Chip Card Module |
Azione4.656 |
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Infineon Technologies |
IC REGULATOR PG-VQFN-40-901
- Applications: Controller, Intel VR12, VR12.5, AMD SVI1, SVI2
- Voltage - Input: 3.3V
- Number of Outputs: 2
- Voltage - Output: -
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 40-VFQFN Exposed Pad
- Supplier Device Package: 40-VQFN (5x5)
|
pacchetto: 40-VFQFN Exposed Pad |
Azione3.696 |
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