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Infineon Technologies |
IGBT 300V 25A 43W TO220AB
- IGBT Type: Trench
- Voltage - Collector Emitter Breakdown (Max): 300V
- Current - Collector (Ic) (Max): 25A
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: 2.96V @ 15V, 120A
- Power - Max: 43W
- Switching Energy: -
- Input Type: Standard
- Gate Charge: 65nC
- Td (on/off) @ 25°C: 36ns/112ns
- Test Condition: 196V, 25A, 10 Ohm
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3 Full Pack
- Supplier Device Package: TO-220AB Full-Pak
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pacchetto: TO-220-3 Full Pack |
Azione18.612 |
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Infineon Technologies |
IGBT 1100V 60A 333W TO247-3
- IGBT Type: Trench
- Voltage - Collector Emitter Breakdown (Max): 1100V
- Current - Collector (Ic) (Max): 60A
- Current - Collector Pulsed (Icm): 90A
- Vce(on) (Max) @ Vge, Ic: 1.75V @ 15V, 30A
- Power - Max: 333W
- Switching Energy: 1.15mJ (off)
- Input Type: Standard
- Gate Charge: 180nC
- Td (on/off) @ 25°C: -/350ns
- Test Condition: 600V, 30A, 15 Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: PG-TO247-3
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pacchetto: TO-247-3 |
Azione7.356 |
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Infineon Technologies |
MOSFET N-CH 25V 50A TO-220AB
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 25V
- Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 40µA
- Gate Charge (Qg) (Max) @ Vgs: 22nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 2653pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 83W (Tc)
- Rds On (Max) @ Id, Vgs: 6.2 mOhm @ 30A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO-220-3
- Package / Case: TO-220-3
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pacchetto: TO-220-3 |
Azione4.736 |
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Infineon Technologies |
MOSFET N-CH 55V 160A TO220AB
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55V
- Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 290nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 7960pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 300W (Tc)
- Rds On (Max) @ Id, Vgs: 3.3 mOhm @ 75A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220
- Package / Case: TO-220-3
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pacchetto: TO-220-3 |
Azione5.600 |
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Infineon Technologies |
MOSFET N-CH 40V 120A TO220AB
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.9V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 161nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 5193pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 163W (Tc)
- Rds On (Max) @ Id, Vgs: 2.5 mOhm @ 100A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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pacchetto: TO-220-3 |
Azione40.800 |
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Infineon Technologies |
MOSFET N-CH 600V TO-252-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.5V @ 90µA
- Gate Charge (Qg) (Max) @ Vgs: 9.4nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 200pF @ 100V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 28W (Tc)
- Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 1.1A, 10V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252-3
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Azione2.816 |
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Infineon Technologies |
MOSFET N-CH 30V 15A PQFN56
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 34A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.35V @ 25µA
- Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1210pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.1W (Ta)
- Rds On (Max) @ Id, Vgs: 8.5 mOhm @ 15A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PQFN (5x6) Single Die
- Package / Case: 8-PowerVDFN
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pacchetto: 8-PowerVDFN |
Azione8.904 |
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Infineon Technologies |
CONSUMER
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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pacchetto: - |
Azione3.456 |
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Infineon Technologies |
MOSFET N-CH 30V 7.1A 6TSOP
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 7.1A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 30µA
- Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2W (Ta)
- Rds On (Max) @ Id, Vgs: 25 mOhm @ 7.1A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: P-TSOP6-6
- Package / Case: SOT-23-6 Thin, TSOT-23-6
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pacchetto: SOT-23-6 Thin, TSOT-23-6 |
Azione2.416 |
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Infineon Technologies |
MOSFET N-CH 800V 4A TO-220AB
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800V
- Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.9V @ 240µA
- Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 570pF @ 100V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 63W (Tc)
- Rds On (Max) @ Id, Vgs: 1.3 Ohm @ 2.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO-220-3
- Package / Case: TO-220-3
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pacchetto: TO-220-3 |
Azione534.024 |
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Infineon Technologies |
MOSFET N-CH 650V 11A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650V
- Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.9V @ 500µA
- Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 125W (Tc)
- Rds On (Max) @ Id, Vgs: 380 mOhm @ 7A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO263-3-2
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Azione646.224 |
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Infineon Technologies |
MOSFET N-CH 75V 56A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 75V
- Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 84nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3070pF @ 50V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 140W (Tc)
- Rds On (Max) @ Id, Vgs: 9 mOhm @ 46A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D-Pak
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Azione11.100 |
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Infineon Technologies |
IC AMP RF LDMOS
- Transistor Type: LDMOS (Dual)
- Frequency: 2.69GHz
- Gain: 20dB
- Voltage - Test: 28V
- Current Rating: -
- Noise Figure: -
- Current - Test: 170mA
- Power - Output: 5W
- Voltage - Rated: 65V
- Package / Case: H-37248-4
- Supplier Device Package: H-37248-4
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pacchetto: H-37248-4 |
Azione4.544 |
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Infineon Technologies |
MOSFET 2P-CH 12V 7.8A 8-SOIC
- FET Type: 2 P-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 12V
- Current - Continuous Drain (Id) @ 25°C: 7.8A
- Rds On (Max) @ Id, Vgs: 24 mOhm @ 7.8A, 4.5V
- Vgs(th) (Max) @ Id: 900mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 33nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 2020pF @ 10V
- Power - Max: 2W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
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pacchetto: 8-SOIC (0.154", 3.90mm Width) |
Azione48.000 |
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Infineon Technologies |
TRANS NPN 32V 0.1A SOT-23
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 32V
- Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA
- Current - Collector Cutoff (Max): 20nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 5V
- Power - Max: 330mW
- Frequency - Transition: 250MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: PG-SOT23-3
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pacchetto: TO-236-3, SC-59, SOT-23-3 |
Azione7.536 |
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Infineon Technologies |
TRANS PREBIAS NPN 200MW SOT23-3
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 22k
- Resistor - Emitter Base (R2) (Ohms): 47k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 150MHz
- Power - Max: 200mW
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: PG-SOT23-3
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pacchetto: TO-236-3, SC-59, SOT-23-3 |
Azione3.968 |
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Infineon Technologies |
TRANS NPN RF 15V 150MA SOT223
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 15V
- Frequency - Transition: 6GHz
- Noise Figure (dB Typ @ f): 1.5dB ~ 2.6dB @ 900MHz ~ 1.8GHz
- Gain: 9dB ~ 14dB
- Power - Max: 1W
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 8V
- Current - Collector (Ic) (Max): 150mA
- Operating Temperature: -
- Mounting Type: Surface Mount
- Package / Case: TO-261-4, TO-261AA
- Supplier Device Package: PG-SOT223-4
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pacchetto: TO-261-4, TO-261AA |
Azione2.768 |
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Infineon Technologies |
TRANS 2PNP PREBIAS 0.25W SOT363
- Transistor Type: 2 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 10k
- Resistor - Emitter Base (R2) (Ohms): 47k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): -
- Frequency - Transition: 200MHz
- Power - Max: 250mW
- Mounting Type: Surface Mount
- Package / Case: 6-VSSOP, SC-88, SOT-363
- Supplier Device Package: PG-SOT363-6
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pacchetto: 6-VSSOP, SC-88, SOT-363 |
Azione29.754 |
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Infineon Technologies |
DIODE VAR CAP 30V 20MA SC79
- Capacitance @ Vr, F: 2.3pF @ 28V, 1MHz
- Capacitance Ratio: 9.8
- Capacitance Ratio Condition: C1/C28
- Voltage - Peak Reverse (Max): 30V
- Diode Type: Single
- Q @ Vr, F: -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-79, SOD-523
- Supplier Device Package: PG-SC79-2
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pacchetto: SC-79, SOD-523 |
Azione280.410 |
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Infineon Technologies |
DIODE GEN PURP 80V 250MA SOT323
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 80V
- Current - Average Rectified (Io): 250mA (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 4ns
- Current - Reverse Leakage @ Vr: 1µA @ 75V
- Capacitance @ Vr, F: 2pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: PG-SOT323-3
- Operating Temperature - Junction: 150°C (Max)
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pacchetto: SC-70, SOT-323 |
Azione5.984 |
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Infineon Technologies |
DIODE ARRAY SCHOTTKY 3V SOT343
- Diode Configuration: 2 Independent
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 3V
- Current - Average Rectified (Io) (per Diode): 100mA (DC)
- Voltage - Forward (Vf) (Max) @ If: 300mV @ 1mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 10µA @ 3V
- Operating Temperature - Junction: 150°C (Max)
- Mounting Type: Surface Mount
- Package / Case: SC-82A, SOT-343
- Supplier Device Package: PG-SOT343-4
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pacchetto: SC-82A, SOT-343 |
Azione2.048 |
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Infineon Technologies |
DIODE ARRAY GP 300V 250MA SOT143
- Diode Configuration: 2 Independent
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 300V
- Current - Average Rectified (Io) (per Diode): 250mA (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.3V @ 100mA
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 1µs
- Current - Reverse Leakage @ Vr: 150nA @ 250V
- Operating Temperature - Junction: 150°C (Max)
- Mounting Type: Surface Mount
- Package / Case: TO-253-4, TO-253AA
- Supplier Device Package: PG-SOT143-4
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pacchetto: TO-253-4, TO-253AA |
Azione6.064 |
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Infineon Technologies |
IC REG BUCK ADJ 3A 16PQFN
- Function: Step-Down
- Output Configuration: Positive
- Topology: Buck
- Output Type: Adjustable
- Number of Outputs: 1
- Voltage - Input (Min): 2.5V
- Voltage - Input (Max): 14V
- Voltage - Output (Min/Fixed): 0.5V
- Voltage - Output (Max): 5V
- Current - Output: 3A
- Frequency - Switching: 800kHz
- Synchronous Rectifier: Yes
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 16-PowerVQFN
- Supplier Device Package: 16-PQFN (3x3)
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pacchetto: 16-PowerVQFN |
Azione4.752 |
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Infineon Technologies |
IC POWER SUPPLY CONTROLLER 8DIP
- Applications: Power Supply Controller
- Voltage - Input: -
- Voltage - Supply: 7.5 V ~ 15.5 V
- Current - Supply: 11mA
- Operating Temperature: -20°C ~ 85°C
- Mounting Type: Through Hole
- Package / Case: 8-DIP
- Supplier Device Package: P-DIP-8
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pacchetto: 8-DIP |
Azione6.112 |
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Infineon Technologies |
IC MOTOR CTLR I2C/SPI 64MQFP
- Motor Type - Stepper: -
- Motor Type - AC, DC: AC, Servo
- Function: Controller - Commutation, Direction Management
- Output Configuration: Pre-Driver - Half Bridge (3)
- Interface: I2C, RS-232, SPI
- Technology: IGBT
- Step Resolution: -
- Applications: General Purpose
- Current - Output: -
- Voltage - Supply: 3V ~ 3.6V
- Voltage - Load: -
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 64-LQFP
- Supplier Device Package: 64-LQFP (10x10)
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pacchetto: 64-LQFP |
Azione3.632 |
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Infineon Technologies |
IC IGBT DVR 1200V DSO8
- Driven Configuration: High-Side or Low-Side
- Channel Type: Single
- Number of Drivers: 1
- Gate Type: N-Channel MOSFET
- Voltage - Supply: 10 V ~ 35 V
- Logic Voltage - VIL, VIH: -
- Current - Peak Output (Source, Sink): 10A, 9.4A
- Input Type: Inverting, Non-Inverting
- High Side Voltage - Max (Bootstrap): 1200V
- Rise / Fall Time (Typ): 10ns, 9ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: PG-DSO-8-51
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pacchetto: 8-SOIC (0.154", 3.90mm Width) |
Azione26.610 |
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Infineon Technologies |
IC OFFLINE CTRLR SMPS CM 8DIP
- Output Isolation: Isolated
- Internal Switch(s): No
- Voltage - Breakdown: -
- Topology: Flyback
- Voltage - Start Up: 15V
- Voltage - Supply (Vcc/Vdd): 8.5 V ~ 21 V
- Duty Cycle: 72%
- Frequency - Switching: 100kHz
- Power (Watts): -
- Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
- Control Features: Soft Start
- Operating Temperature: -25°C ~ 130°C (TJ)
- Package / Case: 8-DIP (0.300", 7.62mm)
- Supplier Device Package: PG-DIP-8
- Mounting Type: Through Hole
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pacchetto: 8-DIP (0.300", 7.62mm) |
Azione24.000 |
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Infineon Technologies |
IC MCU 32BIT 448KB FLASH 144LQFP
- Core Processor: C166SV2
- Core Size: 16/32-Bit
- Speed: 80MHz
- Connectivity: CAN, EBI/EMI, I2C, LIN, SPI, SSC, UART/USART, USI
- Peripherals: I2S, POR, PWM, WDT
- Number of I/O: 118
- Program Memory Size: 448KB (448K x 8)
- Program Memory Type: FLASH
- EEPROM Size: -
- RAM Size: 64K x 8
- Voltage - Supply (Vcc/Vdd): 3 V ~ 5.5 V
- Data Converters: A/D 24x10b
- Oscillator Type: Internal
- Operating Temperature: -40°C ~ 125°C (TA)
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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pacchetto: - |
Azione4.016 |
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Infineon Technologies |
IC TXRX CAN LITE SBC 2MBPS
- Type: System Basis Chip (SBC)
- Applications: CAN Automotive
- Mounting Type: Surface Mount
- Package / Case: 24-TSSOP (0.154", 3.90mm Width) Exposed Pad
- Supplier Device Package: PG-TSDSO-24-1
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pacchetto: 24-TSSOP (0.154", 3.90mm Width) Exposed Pad |
Azione4.688 |
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Infineon Technologies |
IC MCU 32BIT 1MB FLASH 80TQFP
- Core Processor: -
- Core Size: -
- Speed: -
- Connectivity: -
- Peripherals: -
- Number of I/O: -
- Program Memory Size: -
- Program Memory Type: -
- EEPROM Size: -
- RAM Size: -
- Voltage - Supply (Vcc/Vdd): -
- Data Converters: -
- Oscillator Type: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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pacchetto: - |
Azione7.008 |
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