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Infineon Technologies |
IGBT 600V 23A 100W D2PAK
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 600V
- Current - Collector (Ic) (Max): 23A
- Current - Collector Pulsed (Icm): 92A
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 12A
- Power - Max: 100W
- Switching Energy: 160µJ (on), 200µJ (off)
- Input Type: Standard
- Gate Charge: 50nC
- Td (on/off) @ 25°C: 17ns/78ns
- Test Condition: 480V, 12A, 23 Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: D2PAK
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pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Azione4.496 |
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Infineon Technologies |
IGBT 600V 14A 38W D2PAK
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 600V
- Current - Collector (Ic) (Max): 14A
- Current - Collector Pulsed (Icm): 18A
- Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 8A
- Power - Max: 38W
- Switching Energy: 310µJ (on), 3.28mJ (off)
- Input Type: Standard
- Gate Charge: 15nC
- Td (on/off) @ 25°C: 76ns/815ns
- Test Condition: 480V, 8A, 100 Ohm, 15V
- Reverse Recovery Time (trr): 28ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: D2PAK
|
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Azione6.240 |
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Infineon Technologies |
IGBT 600V 31A 100W D2PAK
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 600V
- Current - Collector (Ic) (Max): 31A
- Current - Collector Pulsed (Icm): 120A
- Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 17A
- Power - Max: 100W
- Switching Energy: 630µJ (on), 1.39mJ (off)
- Input Type: Standard
- Gate Charge: 51nC
- Td (on/off) @ 25°C: 42ns/230ns
- Test Condition: 480V, 17A, 23 Ohm, 15V
- Reverse Recovery Time (trr): 42ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: D2PAK
|
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Azione3.072 |
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Infineon Technologies |
MOSFET P-CH 100V 15A TO-220
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 2.1V @ 1.54mA
- Gate Charge (Qg) (Max) @ Vgs: 48nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1280pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 128W (Tc)
- Rds On (Max) @ Id, Vgs: 240 mOhm @ 10.6A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO-220-3
- Package / Case: TO-220-3
|
pacchetto: TO-220-3 |
Azione7.392 |
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Infineon Technologies |
MOSFET N-CH 250V 14A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 250V
- Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 810pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 144W (Tc)
- Rds On (Max) @ Id, Vgs: 260 mOhm @ 8.4A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D-Pak
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
|
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Azione5.632 |
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Infineon Technologies |
MOSFET N-CH 100V 80A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3830pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 260W (Tc)
- Rds On (Max) @ Id, Vgs: 15 mOhm @ 45A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Azione14.568 |
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Infineon Technologies |
MOSFET N-CH 20V 93A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 93A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.45V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 27nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 2160pF @ 10V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 79W (Tc)
- Rds On (Max) @ Id, Vgs: 5.7 mOhm @ 15A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D-Pak
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Azione12.936 |
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Infineon Technologies |
MOSFET N-CH 25V 30A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 25V
- Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 20µA
- Gate Charge (Qg) (Max) @ Vgs: 8.3nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 1043pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 46W (Tc)
- Rds On (Max) @ Id, Vgs: 13.6 mOhm @ 30A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO263-3-2
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Azione55.680 |
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Infineon Technologies |
MOSFET N-CH 55V 131A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55V
- Current - Continuous Drain (Id) @ 25°C: 131A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 260nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 5480pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 200W (Tc)
- Rds On (Max) @ Id, Vgs: 5.3 mOhm @ 101A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Azione4.688 |
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Infineon Technologies |
LOW POWER_NEW
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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pacchetto: - |
Azione6.544 |
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Infineon Technologies |
MOSFET N-CH 150V 37A TO220-FP
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 150V
- Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
- Vgs(th) (Max) @ Id: 4V @ 160µA
- Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4300pF @ 75V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 40.5W (Tc)
- Rds On (Max) @ Id, Vgs: 10.5 mOhm @ 37A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220-FP
- Package / Case: TO-220-3 Full Pack
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pacchetto: TO-220-3 Full Pack |
Azione390.000 |
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Infineon Technologies |
MOSFET N-CH 560V 4.5A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 560V
- Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.9V @ 200µA
- Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 470pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 50W (Tc)
- Rds On (Max) @ Id, Vgs: 950 mOhm @ 2.8A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO252-3
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Azione236.700 |
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Infineon Technologies |
MOSFET N-CH 100V 80A TO220-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 90µA
- Gate Charge (Qg) (Max) @ Vgs: 68nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4910pF @ 50V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 150W (Tc)
- Rds On (Max) @ Id, Vgs: 7.2 mOhm @ 80A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO-220-3
- Package / Case: TO-220-3
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pacchetto: TO-220-3 |
Azione15.552 |
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Infineon Technologies |
MOSFET N-CH 80V 40A 8TSDSON
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80V
- Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 3.8V @ 22µA
- Gate Charge (Qg) (Max) @ Vgs: 18.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 40V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 50W (Tc)
- Rds On (Max) @ Id, Vgs: 11 mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TSDSON-8-FL
- Package / Case: 8-PowerTDFN
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pacchetto: 8-PowerTDFN |
Azione5.632 |
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Infineon Technologies |
MOSFET N-CH 60V 2.6A
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 2.6A (Tj)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 20µA
- Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.8W (Ta)
- Rds On (Max) @ Id, Vgs: 90 mOhm @ 2.6A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-SOT223-4
- Package / Case: TO-261-4, TO-261AA
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pacchetto: TO-261-4, TO-261AA |
Azione19.476 |
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Infineon Technologies |
MOSFET N-CH TO220-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 3.8V @ 184µA
- Gate Charge (Qg) (Max) @ Vgs: 139nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 10300pF @ 50V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 250W (Tc)
- Rds On (Max) @ Id, Vgs: 3 mOhm @ 100A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO-220-3
- Package / Case: TO-220-3
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pacchetto: TO-220-3 |
Azione8.748 |
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Infineon Technologies |
MOSFET N/P-CH 60V 3A/2A 8SOIC
- FET Type: N and P-Channel
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 3A, 2A
- Rds On (Max) @ Id, Vgs: 120 mOhm @ 3A, 10V
- Vgs(th) (Max) @ Id: 4V @ 20µA
- Gate Charge (Qg) (Max) @ Vgs: 15.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 340pF @ 25V
- Power - Max: 2W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: P-DSO-8
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pacchetto: 8-SOIC (0.154", 3.90mm Width) |
Azione6.640 |
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Infineon Technologies |
MOSFET 2N-CH 25V 19A/33A 8TISON
- FET Type: 2 N-Channel (Dual) Asymmetrical
- FET Feature: Logic Level Gate, 4.5V Drive
- Drain to Source Voltage (Vdss): 25V
- Current - Continuous Drain (Id) @ 25°C: 19A, 33A
- Rds On (Max) @ Id, Vgs: 3 mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 8.4nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 12V
- Power - Max: 2.5W
- Operating Temperature: -55°C ~ 155°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerTDFN
- Supplier Device Package: PG-TISON-8
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pacchetto: 8-PowerTDFN |
Azione3.024 |
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Infineon Technologies |
MOSFET N/P-CH 30V 8SOIC
- FET Type: N and P-Channel
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: -
- Rds On (Max) @ Id, Vgs: 29 mOhm @ 5.8A, 10V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 25V
- Power - Max: 2W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
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pacchetto: 8-SOIC (0.154", 3.90mm Width) |
Azione225.516 |
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Infineon Technologies |
TRANS NPN 45V 0.5A SOT-23
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 500mA
- Voltage - Collector Emitter Breakdown (Max): 45V
- Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
- Power - Max: 330mW
- Frequency - Transition: 170MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: PG-SOT23-3
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pacchetto: TO-236-3, SC-59, SOT-23-3 |
Azione3.104 |
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Infineon Technologies |
IFPS MODULES
- Type: -
- Configuration: -
- Current: -
- Voltage: -
- Voltage - Isolation: -
- Package / Case: -
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pacchetto: - |
Azione6.720 |
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Infineon Technologies |
MOTION CTLR MODULE 500V 2A
- Motor Type - Stepper: -
- Motor Type - AC, DC: AC, Synchronous
- Function: Driver - Fully Integrated, Control and Power Stage
- Output Configuration: Half Bridge (3)
- Interface: Parallel
- Technology: Power MOSFET
- Step Resolution: -
- Applications: -
- Current - Output: -
- Voltage - Supply: 13.5 V ~ 16.5 V
- Voltage - Load: 100 V ~ 450 V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 40-PowerVQFN
- Supplier Device Package: 40-PQFN (12x12)
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pacchetto: 40-PowerVQFN |
Azione5.168 |
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Infineon Technologies |
IC SMART BALLAST CONTROL DSO-19
- Type: PFC/Ballast Controller
- Frequency: 20kHz ~ 120kHz
- Voltage - Supply: 10.6 V ~ 17.5 V
- Current - Supply: 4.2mA
- Current - Output Source/Sink: -
- Dimming: No
- Operating Temperature: -25°C ~ 125°C
- Mounting Type: Surface Mount
- Package / Case: 20-SOIC (0.295", 7.50mm Width) 19 Leads
- Supplier Device Package: PG-DSO-19
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pacchetto: 20-SOIC (0.295", 7.50mm Width) 19 Leads |
Azione6.256 |
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Infineon Technologies |
IC DRIVER HIGH/LOW DRIVER 8-SOIC
- Driven Configuration: Half-Bridge
- Channel Type: Independent
- Number of Drivers: 2
- Gate Type: IGBT, N-Channel MOSFET
- Voltage - Supply: 10 V ~ 20 V
- Logic Voltage - VIL, VIH: 0.8V, 2.9V
- Current - Peak Output (Source, Sink): 200mA, 350mA
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): 600V
- Rise / Fall Time (Typ): 150ns, 50ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
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pacchetto: 8-SOIC (0.154", 3.90mm Width) |
Azione538.128 |
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Infineon Technologies |
IC OFFLN CONV FLYBACK 12DSO
- Output Isolation: Isolated
- Internal Switch(s): Yes
- Voltage - Breakdown: 800V
- Topology: Flyback
- Voltage - Start Up: 17V
- Voltage - Supply (Vcc/Vdd): 10.5 V ~ 25 V
- Duty Cycle: 75%
- Frequency - Switching: 100kHz
- Power (Watts): 29W
- Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
- Control Features: -
- Operating Temperature: -40°C ~ 125°C (TJ)
- Package / Case: 16-SOIC (0.154", 3.90mm Width) 12 leads
- Supplier Device Package: PG-DSO-12
- Mounting Type: Surface Mount
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pacchetto: 16-SOIC (0.154", 3.90mm Width) 12 leads |
Azione2.928 |
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Infineon Technologies |
IC CTRL PPP/HDLC SERIAL TQFP-100
- Function: Serial Optimized Communications Controller
- Interface: ASYNC, BISYNC, HDLC, PPP
- Number of Circuits: 2
- Voltage - Supply: 3 V ~ 3.6 V
- Current - Supply: 50mA
- Power (Watts): 150mW
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Surface Mount
- Package / Case: 100-LQFP
- Supplier Device Package: P-TQFP-100
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pacchetto: 100-LQFP |
Azione5.856 |
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Infineon Technologies |
IC DGTL AMP AUD 3CH 200V 48MLPQ
- Function: Line Driver
- Applications: Pre-Amplifier
- Number of Channels: 3
- Interface: Analog
- Voltage - Supply: 10 V ~ 15 V
- Operating Temperature: -40°C ~ 125°C (TA)
- Specifications: Class D
- Package / Case: 48-VFQFN Exposed Pad
- Supplier Device Package: 48-MLPQ (7x7)
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pacchetto: 48-VFQFN Exposed Pad |
Azione5.296 |
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Infineon Technologies |
IC AMP MMIC RF 17.0DB TSNP-7
- RF Type: Galileo, GLONASS, GPS
- Frequency: 1575MHz ~ 1609MHz
- Features: -
- Package / Case: 6-WDFN Exposed Pad
- Supplier Device Package: TSNP-7-10
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pacchetto: 6-WDFN Exposed Pad |
Azione7.794 |
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Infineon Technologies |
IC RELAY 300VAC/DC 180MA 16-DIP
- Circuit: DPST (2 Form A)
- Output Type: AC, DC
- On-State Resistance (Max): 24 Ohm
- Load Current: 180mA
- Voltage - Input: 1.2VDC
- Voltage - Load: 0 ~ 300 V
- Mounting Type: Through Hole
- Termination Style: PC Pin
- Package / Case: 16-DIP (0.300", 7.62mm), 10 Leads
- Supplier Device Package: 16-DIP
- Relay Type: Relay
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pacchetto: 16-DIP (0.300", 7.62mm), 10 Leads |
Azione37.764 |
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Infineon Technologies |
IC VID VOLTAGE PROGRAMMER 48MLPQ
- Applications: VID Voltage Programmer
- Voltage - Input: -
- Voltage - Supply: 7.4 V ~ 21 V
- Current - Supply: 38mA
- Operating Temperature: 0°C ~ 125°C
- Mounting Type: Surface Mount
- Package / Case: 48-VFQFN Exposed Pad
- Supplier Device Package: 48-MLPQ (7x7)
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pacchetto: 48-VFQFN Exposed Pad |
Azione6.560 |
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