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Infineon Technologies |
IGBT 1200V 99A 350W SUPER247
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 1200V
- Current - Collector (Ic) (Max): 99A
- Current - Collector Pulsed (Icm): 200A
- Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 70A
- Power - Max: 350W
- Switching Energy: 8.8mJ (on), 9.4mJ (off)
- Input Type: Standard
- Gate Charge: 380nC
- Td (on/off) @ 25°C: 46ns/250ns
- Test Condition: 960V, 70A, 5 Ohm, 15V
- Reverse Recovery Time (trr): 110ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-274AA
- Supplier Device Package: SUPER-247 (TO-274AA)
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pacchetto: TO-274AA |
Azione15.036 |
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Infineon Technologies |
IGBT 600V 41A 250W TO247-3
- IGBT Type: NPT
- Voltage - Collector Emitter Breakdown (Max): 600V
- Current - Collector (Ic) (Max): 41A
- Current - Collector Pulsed (Icm): 112A
- Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A
- Power - Max: 250W
- Switching Energy: 1.29mJ
- Input Type: Standard
- Gate Charge: 140nC
- Td (on/off) @ 25°C: 44ns/291ns
- Test Condition: 400V, 30A, 11 Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: PG-TO247-3
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pacchetto: TO-247-3 |
Azione3.952 |
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Infineon Technologies |
IGBT 600V 12A 100W TO252-3
- IGBT Type: Trench
- Voltage - Collector Emitter Breakdown (Max): 600V
- Current - Collector (Ic) (Max): 12A
- Current - Collector Pulsed (Icm): 18A
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 6A
- Power - Max: 100W
- Switching Energy: -
- Input Type: Standard
- Gate Charge: 48nC
- Td (on/off) @ 25°C: 12ns/127ns
- Test Condition: 400V, 6A, 23 Ohm, 15V
- Reverse Recovery Time (trr): 68ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: PG-TO252-3
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pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Azione7.456 |
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Infineon Technologies |
MOSFET N-CH 75V 170A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 75V
- Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 150µA
- Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 6920pF @ 50V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 300W (Tc)
- Rds On (Max) @ Id, Vgs: 4.1 mOhm @ 75A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Azione4.304 |
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Infineon Technologies |
MOSFET N-CH 25V 90A IPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 25V
- Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 40µA
- Gate Charge (Qg) (Max) @ Vgs: 26nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 3200pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 94W (Tc)
- Rds On (Max) @ Id, Vgs: 4.4 mOhm @ 60A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO251-3
- Package / Case: TO-251-3 Stub Leads, IPak
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pacchetto: TO-251-3 Stub Leads, IPak |
Azione2.736 |
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Infineon Technologies |
MOSFET N-CH 650V 17.5A TO262
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650V
- Current - Continuous Drain (Id) @ 25°C: 17.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 730µA
- Gate Charge (Qg) (Max) @ Vgs: 68nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1850pF @ 100V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 151W (Tc)
- Rds On (Max) @ Id, Vgs: 190 mOhm @ 7.3A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO262-3
- Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
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pacchetto: TO-262-3 Long Leads, I2Pak, TO-262AA |
Azione5.792 |
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Infineon Technologies |
MOSFET N-CH 100V 7.3A 8-SOIC
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 7.3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 51nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1530pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta)
- Rds On (Max) @ Id, Vgs: 22 mOhm @ 4.4A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SO
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
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pacchetto: 8-SOIC (0.154", 3.90mm Width) |
Azione7.536 |
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Infineon Technologies |
MOSFET N-CH 20V 8.7A 8-SOIC
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 8.7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
- Vgs(th) (Max) @ Id: 700mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 48nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 15V
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta)
- Rds On (Max) @ Id, Vgs: 22 mOhm @ 4.1A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SO
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
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pacchetto: 8-SOIC (0.154", 3.90mm Width) |
Azione5.024 |
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Infineon Technologies |
MOSFET N-CH 800V 8A TO-262
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800V
- Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.9V @ 470µA
- Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 100V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 104W (Tc)
- Rds On (Max) @ Id, Vgs: 650 mOhm @ 5.1A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO262-3-1
- Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
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pacchetto: TO-262-3 Long Leads, I2Pak, TO-262AA |
Azione49.128 |
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Infineon Technologies |
MOSFET N-CH 55V 135A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55V
- Current - Continuous Drain (Id) @ 25°C: 135A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 230nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 5110pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 200W (Tc)
- Rds On (Max) @ Id, Vgs: 4.7 mOhm @ 104A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Azione37.212 |
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Infineon Technologies |
IC AMP RF LDMOS
- Transistor Type: -
- Frequency: -
- Gain: -
- Voltage - Test: -
- Current Rating: -
- Noise Figure: -
- Current - Test: -
- Power - Output: -
- Voltage - Rated: -
- Package / Case: -
- Supplier Device Package: -
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pacchetto: - |
Azione6.048 |
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Infineon Technologies |
MOSFET 2N-CH 50V 3A 8SOIC
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 50V
- Current - Continuous Drain (Id) @ 25°C: 3A
- Rds On (Max) @ Id, Vgs: 130 mOhm @ 3A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 255pF @ 25V
- Power - Max: 2.4W
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
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pacchetto: 8-SOIC (0.154", 3.90mm Width) |
Azione4.992 |
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Infineon Technologies |
MOSFET 2P-CH 30V 2.3A 8-SOIC
- FET Type: 2 P-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 2.3A
- Rds On (Max) @ Id, Vgs: 250 mOhm @ 1A, 10V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 15V
- Power - Max: 2W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
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pacchetto: 8-SOIC (0.154", 3.90mm Width) |
Azione346.992 |
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Infineon Technologies |
TRANS PREBIAS PNP 0.2W SOT23-3
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 47k
- Resistor - Emitter Base (R2) (Ohms): 47k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 190MHz
- Power - Max: 200mW
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: PG-SOT23-3
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pacchetto: TO-236-3, SC-59, SOT-23-3 |
Azione189.486 |
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Infineon Technologies |
TRANS 2NPN PREBIAS 0.25W SOT363
- Transistor Type: 2 NPN - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 4.7k
- Resistor - Emitter Base (R2) (Ohms): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): -
- Frequency - Transition: 150MHz
- Power - Max: 250mW
- Mounting Type: Surface Mount
- Package / Case: 6-VSSOP, SC-88, SOT-363
- Supplier Device Package: PG-SOT363-6
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pacchetto: 6-VSSOP, SC-88, SOT-363 |
Azione3.072 |
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Infineon Technologies |
DIODE SCHOTTKY RF CC SOT-323
- Diode Type: Schottky - 1 Pair Common Cathode
- Voltage - Peak Reverse (Max): 4V
- Current - Max: 130mA
- Capacitance @ Vr, F: 0.75pF @ 0V, 1MHz
- Resistance @ If, F: 15 Ohm @ 5mA, 10kHz
- Power Dissipation (Max): 150mW
- Operating Temperature: 150°C (TJ)
- Package / Case: SC-70, SOT-323
- Supplier Device Package: PG-SOT323-3
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pacchetto: SC-70, SOT-323 |
Azione7.056 |
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Infineon Technologies |
DIODE RF PIN 150V 100MA SOT323
- Diode Type: PIN - 1 Pair Series Connection
- Voltage - Peak Reverse (Max): 150V
- Current - Max: 100mA
- Capacitance @ Vr, F: 0.35pF @ 20V, 1MHz
- Resistance @ If, F: 1.35 Ohm @ 100mA, 100MHz
- Power Dissipation (Max): 250mW
- Operating Temperature: 150°C (TJ)
- Package / Case: SC-70, SOT-323
- Supplier Device Package: PG-SOT323-3
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pacchetto: SC-70, SOT-323 |
Azione2.176 |
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Infineon Technologies |
DIODE PIN SGL 80V 100MA TSLP2-19
- Diode Type: PIN - Single
- Voltage - Peak Reverse (Max): 80V
- Current - Max: 100mA
- Capacitance @ Vr, F: 0.35pF @ 1V, 1MHz
- Resistance @ If, F: 800 mOhm @ 10mA, 100MHz
- Power Dissipation (Max): 250mW
- Operating Temperature: 150°C (TJ)
- Package / Case: 2-XDFN
- Supplier Device Package: TSLP-2-19
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pacchetto: 2-XDFN |
Azione2.080 |
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Infineon Technologies |
DIODE GEN PURP 1.2KV 25A DIE
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1200V
- Current - Average Rectified (Io): 25A
- Voltage - Forward (Vf) (Max) @ If: 2.7V @ 25A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 190ns
- Current - Reverse Leakage @ Vr: 700nA @ 1200V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Die
- Operating Temperature - Junction: -40°C ~ 150°C
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pacchetto: Die |
Azione3.280 |
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Infineon Technologies |
IC REG LINEAR 1.8V 1A SOT223
- Output Configuration: Positive
- Output Type: Fixed
- Number of Regulators: 1
- Voltage - Input (Max): 7V
- Voltage - Output (Min/Fixed): 1.8V
- Voltage - Output (Max): -
- Voltage Dropout (Max): 1.3V @ 1A
- Current - Output: 1A
- Current - Quiescent (Iq): -
- Current - Supply (Max): -
- PSRR: 70dB (120Hz)
- Control Features: -
- Protection Features: Over Current, Over Temperature
- Operating Temperature: 0°C ~ 125°C
- Mounting Type: Surface Mount
- Package / Case: TO-261-4, TO-261AA
- Supplier Device Package: SOT-223
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pacchetto: TO-261-4, TO-261AA |
Azione5.856 |
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Infineon Technologies |
IC PWR SWITCH N-CHAN 1:1 DPAK-5
- Switch Type: General Purpose
- Number of Outputs: 1
- Ratio - Input:Output: 1:1
- Output Configuration: High Side
- Output Type: N-Channel
- Interface: On/Off
- Voltage - Load: 5.8 V ~ 35 V
- Voltage - Supply (Vcc/Vdd): Not Required
- Current - Output (Max): 12A
- Rds On (Typ): 4.8 mOhm
- Input Type: Non-Inverting
- Features: -
- Fault Protection: Current Limiting (Fixed), Over Temperature
- Operating Temperature: -40°C ~ 150°C (TJ)
- Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
- Supplier Device Package: DPAK-5
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pacchetto: TO-252-5, DPak (4 Leads + Tab), TO-252AD |
Azione7.356 |
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Infineon Technologies |
IC MOTOR DRIVER PAR 36-PQFN
- Motor Type - Stepper: -
- Motor Type - AC, DC: AC, Synchronous
- Function: Driver - Fully Integrated, Control and Power Stage
- Output Configuration: Half Bridge (3)
- Interface: Parallel
- Technology: UMOS
- Step Resolution: -
- Applications: Appliance
- Current - Output: 4A
- Voltage - Supply: 13.5 V ~ 16.5 V
- Voltage - Load: 200V (Max)
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 36-PowerVQFN
- Supplier Device Package: 36-PQFN (12x12)
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pacchetto: 36-PowerVQFN |
Azione8.328 |
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Infineon Technologies |
IC DRIVER BRIDGE 3PHASE 44PLCC
- Driven Configuration: Half-Bridge
- Channel Type: 3-Phase
- Number of Drivers: 6
- Gate Type: IGBT, N-Channel MOSFET
- Voltage - Supply: 10 V ~ 20 V
- Logic Voltage - VIL, VIH: 0.8V, 2.2V
- Current - Peak Output (Source, Sink): 250mA, 500mA
- Input Type: Inverting
- High Side Voltage - Max (Bootstrap): 600V
- Rise / Fall Time (Typ): 80ns, 35ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 44-LCC (J-Lead), 32 Leads
- Supplier Device Package: 44-PLCC, 32 Leads (16.58x16.58)
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pacchetto: 44-LCC (J-Lead), 32 Leads |
Azione555.336 |
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Infineon Technologies |
IC MCU 32BIT 1MB FLASH 176LQFP
- Core Processor: TriCore?
- Core Size: 32-Bit
- Speed: 66MHz
- Connectivity: ASC, CAN, MLI, MSC, SSC
- Peripherals: DMA, POR, WDT
- Number of I/O: 81
- Program Memory Size: 1MB (1M x 8)
- Program Memory Type: FLASH
- EEPROM Size: -
- RAM Size: 52K x 8
- Voltage - Supply (Vcc/Vdd): 1.42 V ~ 1.58 V
- Data Converters: A/D 2x10b; A/D 32x8b,10b,12b
- Oscillator Type: External
- Operating Temperature: -40°C ~ 125°C (TA)
- Mounting Type: -
- Package / Case: 176-LQFP
- Supplier Device Package: 176-LQFP (24x24)
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pacchetto: 176-LQFP |
Azione11.952 |
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Infineon Technologies |
IC MCU 8BIT 64KB FLASH 64LQFP
- Core Processor: XC800
- Core Size: 8-Bit
- Speed: 27MHz
- Connectivity: LIN, SPI, SSI, UART/USART
- Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
- Number of I/O: 40
- Program Memory Size: 64KB (64K x 8)
- Program Memory Type: FLASH
- EEPROM Size: -
- RAM Size: 3.25K x 8
- Voltage - Supply (Vcc/Vdd): 4.5 V ~ 5.5 V
- Data Converters: A/D 8x10b
- Oscillator Type: Internal
- Operating Temperature: -40°C ~ 105°C (TA)
- Mounting Type: -
- Package / Case: 64-LQFP
- Supplier Device Package: 64-LQFP (10x10)
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pacchetto: 64-LQFP |
Azione6.432 |
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Infineon Technologies |
IC TEMPERATURE SENSOR SOT-23
- Resistance in Ohms @ 25°C: 1k
- Resistance Tolerance: ±3%
- Operating Temperature: -50°C ~ 150°C
- Power - Max: -
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3
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pacchetto: TO-236-3, SC-59, SOT-23-3 |
Azione1.658.100 |
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Infineon Technologies |
IC RF TXRX ISM<1GHZ 40-VFQFN
- Type: TxRx Only
- RF Family/Standard: General ISM < 1GHz
- Protocol: -
- Modulation: ASK, FSK
- Frequency: 434MHz
- Data Rate (Max): 100kbps
- Power - Output: 13dBm
- Sensitivity: -115dBm
- Memory Size: -
- Serial Interfaces: I2C, SPI
- GPIO: -
- Voltage - Supply: 2.1 V ~ 5.5 V
- Current - Receiving: 8.6mA ~ 9.5mA
- Current - Transmitting: 5mA ~ 18.3mA
- Operating Temperature: -40°C ~ 85°C
- Package / Case: 40-VFQFN Exposed Pad
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pacchetto: 40-VFQFN Exposed Pad |
Azione3.636 |
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Infineon Technologies |
IC REG BUCK 40VQFN
- Output Type: -
- Function: -
- Output Configuration: -
- Topology: -
- Number of Outputs: -
- Output Phases: -
- Voltage - Supply (Vcc/Vdd): -
- Frequency - Switching: -
- Duty Cycle (Max): -
- Synchronous Rectifier: -
- Clock Sync: -
- Serial Interfaces: -
- Control Features: -
- Operating Temperature: -
- Package / Case: -
- Supplier Device Package: -
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pacchetto: - |
Azione29.832 |
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Infineon Technologies |
IC REG LINEAR 5V 1A TO252-3
- Output Configuration: Positive
- Output Type: Fixed
- Number of Regulators: 1
- Voltage - Input (Max): 40V
- Voltage - Output (Min/Fixed): 5V
- Voltage - Output (Max): -
- Voltage Dropout (Max): 1.4V @ 1A
- Current - Output: 1A
- Current - Quiescent (Iq): 1.6mA
- Current - Supply (Max): -
- PSRR: 65dB (120Hz)
- Control Features: -
- Protection Features: Over Current, Over Temperature, Short Circuit
- Operating Temperature: -40°C ~ 125°C
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: PG-TO252-3
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pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Azione51.870 |
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Infineon Technologies |
IC TRANSCEIVER 1/1 DSO-8
- Type: Transceiver
- Protocol: LIN
- Number of Drivers/Receivers: 1/1
- Duplex: -
- Receiver Hysteresis: -
- Data Rate: 20kbps
- Voltage - Supply: -
- Operating Temperature: -
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: PG-DSO-8
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pacchetto: 8-SOIC (0.154", 3.90mm Width) |
Azione23.262 |
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