|
|
Infineon Technologies |
MOSFET N-CH 40V 104A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 104A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 68nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 3445pF @ 25V
- Vgs (Max): ±16V
- FET Feature: -
- Power Dissipation (Max): 2.4W (Ta), 167W (Tc)
- Rds On (Max) @ Id, Vgs: 8 mOhm @ 62A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
|
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Azione6.576 |
|
|
|
Infineon Technologies |
MOSFET N-CH 100V 170MA SOT-23
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 170mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
- Vgs(th) (Max) @ Id: 1.8V @ 50µA
- Gate Charge (Qg) (Max) @ Vgs: 2.8nC @ 7V
- Input Capacitance (Ciss) (Max) @ Vds: 68pF @ 25V
- Vgs (Max): ±20V
- FET Feature: Depletion Mode
- Power Dissipation (Max): 360mW (Ta)
- Rds On (Max) @ Id, Vgs: 6 Ohm @ 170mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-SOT23-3
- Package / Case: TO-236-3, SC-59, SOT-23-3
|
pacchetto: TO-236-3, SC-59, SOT-23-3 |
Azione3.600 |
|
|
|
Infineon Technologies |
MOSFET N-CH 30V 55A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 50nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 25V
- Vgs (Max): ±16V
- FET Feature: -
- Power Dissipation (Max): 107W (Tc)
- Rds On (Max) @ Id, Vgs: 19 mOhm @ 33A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D-Pak
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
|
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Azione462.468 |
|
|
|
Infineon Technologies |
MOSFET N-CH 100V 9.7A TO-262
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 9.7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.8W (Ta), 48W (Tc)
- Rds On (Max) @ Id, Vgs: 200 mOhm @ 5.7A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-262
- Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
|
pacchetto: TO-262-3 Long Leads, I2Pak, TO-262AA |
Azione7.408 |
|
|
|
Infineon Technologies |
MOSFET N-CH 30V 87A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 87A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.25V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 26nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 2130pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 79W (Tc)
- Rds On (Max) @ Id, Vgs: 6.3 mOhm @ 21A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
|
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Azione3.344 |
|
|
|
Infineon Technologies |
MOSFET N-CH 55V 19A D-PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55V
- Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 420pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 50W (Tc)
- Rds On (Max) @ Id, Vgs: 85 mOhm @ 11A, 10V
- Operating Temperature: -
- Mounting Type: Surface Mount
- Supplier Device Package: D-Pak
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
|
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Azione4.704 |
|
|
|
Infineon Technologies |
MOSFET N-CH 30V 14A 8-SOIC
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V, 16V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 59nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2410pF @ 15V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta)
- Rds On (Max) @ Id, Vgs: 8 mOhm @ 14A, 16V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SO
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
|
pacchetto: 8-SOIC (0.154", 3.90mm Width) |
Azione140.040 |
|
|
|
Infineon Technologies |
MOSFET N-CH TO262-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.5V @ 180µA
- Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 10120pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 250W (Tc)
- Rds On (Max) @ Id, Vgs: 3.9 mOhm @ 100A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO263-3-1
- Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
|
pacchetto: TO-262-3 Long Leads, I2Pak, TO-262AA |
Azione7.104 |
|
|
|
Infineon Technologies |
MOSFET N-CH 40V 75A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 240nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 6450pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 300W (Tc)
- Rds On (Max) @ Id, Vgs: 2 mOhm @ 75A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
|
pacchetto: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Azione391.200 |
|
|
|
Infineon Technologies |
MOSFET N-CH 75V 2.5A 6TSOP
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 75V
- Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 1.8V @ 218µA
- Gate Charge (Qg) (Max) @ Vgs: 13.1nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 315pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2W (Ta)
- Rds On (Max) @ Id, Vgs: 150 mOhm @ 2.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TSOP6-6
- Package / Case: SOT-23-6 Thin, TSOT-23-6
|
pacchetto: SOT-23-6 Thin, TSOT-23-6 |
Azione3.392 |
|
|
|
Infineon Technologies |
MOSFET NCH 650V 10.1A TO220-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650V
- Current - Continuous Drain (Id) @ 25°C: 10.1A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.5V @ 210µA
- Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 440pF @ 100V
- Vgs (Max): ±20V
- FET Feature: Super Junction
- Power Dissipation (Max): 28W (Tc)
- Rds On (Max) @ Id, Vgs: 650 mOhm @ 2.1A, 10V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220 Full Pack
- Package / Case: TO-220-3 Full Pack
|
pacchetto: TO-220-3 Full Pack |
Azione7.260 |
|
|
|
Infineon Technologies |
MOSFET N-CH TO263-7
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.5V @ 275µA
- Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 14600pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 300W (Tc)
- Rds On (Max) @ Id, Vgs: 2.5 mOhm @ 100A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO263-7-3
- Package / Case: TO-263-7, D2Pak (6 Leads + Tab)
|
pacchetto: TO-263-7, D2Pak (6 Leads + Tab) |
Azione12.936 |
|
|
|
Infineon Technologies |
MOSFET N-CH 600V 20.2A TO220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 630µ
- Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1750pF @ 100V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 151W (Tc)
- Rds On (Max) @ Id, Vgs: 190 mOhm @ 7.6A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO-220-3
- Package / Case: TO-220-3
|
pacchetto: TO-220-3 |
Azione4.224 |
|
|
|
Infineon Technologies |
MOSFET N-CH 30V 86A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 86A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.25V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 26nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 2330pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 79W (Tc)
- Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 15A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D-Pak
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
|
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Azione62.412 |
|
|
|
Infineon Technologies |
MOSFET N-CH 200V 94A TO-247AC
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200V
- Current - Continuous Drain (Id) @ 25°C: 94A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 270nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 6040pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 580W (Tc)
- Rds On (Max) @ Id, Vgs: 23 mOhm @ 56A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247AC
- Package / Case: TO-247-3
|
pacchetto: TO-247-3 |
Azione53.940 |
|
|
|
Infineon Technologies |
TRANS 2NPN 65V 0.1A SOT363
- Transistor Type: 2 NPN (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 65V
- Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
- Current - Collector Cutoff (Max): 15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
- Power - Max: 250mW
- Frequency - Transition: 250MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-VSSOP, SC-88, SOT-363
- Supplier Device Package: PG-SOT363-6
|
pacchetto: 6-VSSOP, SC-88, SOT-363 |
Azione4.832 |
|
|
|
Infineon Technologies |
DIODE CHIP EMITTER CONTROLLED
- Diode Type: -
- Voltage - DC Reverse (Vr) (Max): -
- Current - Average Rectified (Io): -
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: -
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: -
- Capacitance @ Vr, F: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
- Operating Temperature - Junction: -
|
pacchetto: - |
Azione3.424 |
|
|
|
Infineon Technologies |
DIODE SCHOTTKY 650V 40A TO247-3
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 650V
- Current - Average Rectified (Io) (per Diode): 20A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.7V @ 20A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 210µA @ 650V
- Operating Temperature - Junction: -55°C ~ 175°C
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: PG-TO247-3
|
pacchetto: TO-247-3 |
Azione5.312 |
|
|
|
Infineon Technologies |
DIODE GP 400V 500MA SOT89
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 400V
- Current - Average Rectified (Io) (per Diode): 500mA
- Voltage - Forward (Vf) (Max) @ If: 1.6V @ 1A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 1µs
- Current - Reverse Leakage @ Vr: 1µA @ 400V
- Operating Temperature - Junction: 150°C (Max)
- Mounting Type: Surface Mount
- Package / Case: TO-243AA
- Supplier Device Package: PG-SOT89
|
pacchetto: TO-243AA |
Azione3.792 |
|
|
|
Infineon Technologies |
IC CTRL XPHASE3 DDR 16-MLPQ
- Applications: Processor
- Current - Supply: 10mA
- Voltage - Supply: 4.75 V ~ 7.5 V
- Operating Temperature: 0°C ~ 125°C
- Mounting Type: Surface Mount
- Package / Case: 16-VFQFN Exposed Pad
- Supplier Device Package: 16-MLPQ (3x3)
|
pacchetto: 16-VFQFN Exposed Pad |
Azione120.936 |
|
|
|
Infineon Technologies |
IC SWITCH SMART HISIDE TO263
- Switch Type: General Purpose
- Number of Outputs: 1
- Ratio - Input:Output: 1:1
- Output Configuration: High Side
- Output Type: N-Channel
- Interface: On/Off
- Voltage - Load: 5.5 V ~ 28 V
- Voltage - Supply (Vcc/Vdd): Not Required
- Current - Output (Max): 33A
- Rds On (Typ): -
- Input Type: Non-Inverting
- Features: -
- Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
- Operating Temperature: -40°C ~ 150°C (TJ)
- Package / Case: TO-263-7, D2Pak (6 Leads + Tab)
- Supplier Device Package: PG-TO-263-7-8
|
pacchetto: TO-263-7, D2Pak (6 Leads + Tab) |
Azione3.984 |
|
|
|
Infineon Technologies |
IC GATE DRIVER 8WSON
- Driven Configuration: Low-Side
- Channel Type: Independent
- Number of Drivers: 2
- Gate Type: N-Channel MOSFET
- Voltage - Supply: 4.5 V ~ 20 V
- Logic Voltage - VIL, VIH: -
- Current - Peak Output (Source, Sink): 5A, 5A
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): -
- Rise / Fall Time (Typ): 5.3ns, 4.5ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-WDFN Exposed Pad
- Supplier Device Package: PG-WSON-8-1
|
pacchetto: 8-WDFN Exposed Pad |
Azione2.688 |
|
|
|
Infineon Technologies |
IC SWITCH MEM TIME CMOS 100-MQFP
- Applications: Memory Time Switch
- Interface: -
- Voltage - Supply: -
- Package / Case: 100-BQFP
- Supplier Device Package: P-MQFP-100
- Mounting Type: Surface Mount
|
pacchetto: 100-BQFP |
Azione6.128 |
|
|
|
Infineon Technologies |
IC MCU 16BIT ROMLESS 100MQFP
- Core Processor: C166
- Core Size: 16-Bit
- Speed: 20MHz
- Connectivity: EBI/EMI, I2C, SPI, UART/USART
- Peripherals: POR, PWM, WDT
- Number of I/O: 76
- Program Memory Size: -
- Program Memory Type: ROMless
- EEPROM Size: -
- RAM Size: 3K x 8
- Voltage - Supply (Vcc/Vdd): 3 V ~ 3.6 V
- Data Converters: A/D 4x10b
- Oscillator Type: Internal
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: -
- Package / Case: 100-BQFP
- Supplier Device Package: 100-MQFP (14x20)
|
pacchetto: 100-BQFP |
Azione7.840 |
|
|
|
Infineon Technologies |
IC MCU 32BIT 1.5MB FLASH 196FBGA
- Core Processor: ARM? Cortex?-M4
- Core Size: 32-Bit
- Speed: 144MHz
- Connectivity: CAN, EBI/EMI, Ethernet, I2C, LIN, MMC/SD, SPI, UART/USART, USB OTG, USIC
- Peripherals: DMA, I2S, LED, POR, Touch-Sense, WDT
- Number of I/O: 155
- Program Memory Size: 1.5MB (1.5M x 8)
- Program Memory Type: FLASH
- EEPROM Size: -
- RAM Size: 276K x 8
- Voltage - Supply (Vcc/Vdd): 3.13 V ~ 3.63 V
- Data Converters: A/D 32x12b, D/A 2x12b
- Oscillator Type: External
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: -
- Package / Case: 196-LFBGA
- Supplier Device Package: PG-LFBGA-196-2
|
pacchetto: 196-LFBGA |
Azione2.896 |
|
|
|
Infineon Technologies |
IC SECURITY CTRLR 8/16BIT M5.1
- Applications: Security
- Core Processor: -
- Program Memory Type: -
- Controller Series: -
- RAM Size: -
- Interface: -
- Number of I/O: -
- Voltage - Supply: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: M5.1 Chip Card Module
- Supplier Device Package: T-M5.1-9
|
pacchetto: M5.1 Chip Card Module |
Azione7.552 |
|
|
|
Infineon Technologies |
CMOS SWITCH
- Frequency - Lower: 500MHz
- Frequency - Upper: 6GHz
- Isolation @ Frequency: 17dB @ 6GHz (typ)
- Insertion Loss @ Frequency: 1.5dB @ 6GHz
- IIP3: 76dBm (typ)
- Topology: -
- Circuit: SP3T
- P1dB: -
- Features: -
- Impedance: 50 Ohm
- Operating Temperature: -40°C ~ 85°C
- Voltage - Supply: 1.8 V ~ 3.6 V
- RF Type: -
- Package / Case: -
- Supplier Device Package: -
|
pacchetto: - |
Azione8.910 |
|
|
|
Infineon Technologies |
MICRO MCM
- Output Configuration: Half Bridge (3)
- Applications: AC Motors
- Interface: Logic
- Load Type: Inductive
- Technology: UMOS
- Rds On (Typ): 1.8 Ohm
- Current - Output / Channel: 2.1A
- Current - Peak Output: 15A
- Voltage - Supply: 13.5 V ~ 16.5 V
- Voltage - Load: 400V (Max)
- Operating Temperature: -40°C ~ 150°C (TJ)
- Features: Bootstrap Circuit
- Fault Protection: UVLO
- Mounting Type: Surface Mount
- Package / Case: 32-PowerSMD Module, 23 Leads
- Supplier Device Package: 23-SOP
|
pacchetto: 32-PowerSMD Module, 23 Leads |
Azione2.368 |
|
|
|
Infineon Technologies |
IC TXRX CAN STD HI SPEED 8DSO
- Type: Transceiver
- Protocol: CANbus
- Number of Drivers/Receivers: 1/1
- Duplex: Full
- Receiver Hysteresis: 150mV
- Data Rate: 1MBd
- Voltage - Supply: 4.5 V ~ 5.5 V
- Operating Temperature: -40°C ~ 160°C
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: PG-DSO-8
|
pacchetto: 8-SOIC (0.154", 3.90mm Width) |
Azione36.372 |
|
|
|
Infineon Technologies |
IC MCU 32BIT 8MB FLASH 292LFBGA
- Core Processor: -
- Core Size: -
- Speed: -
- Connectivity: -
- Peripherals: -
- Number of I/O: -
- Program Memory Size: -
- Program Memory Type: -
- EEPROM Size: -
- RAM Size: -
- Voltage - Supply (Vcc/Vdd): -
- Data Converters: -
- Oscillator Type: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
|
pacchetto: - |
Azione5.520 |
|