Memoria

AS6C6264-55PIN

Alliance Memory, Inc.

IC SRAM 64KBIT 55NS 28DIP

• Memory Type: Volatile
• Memory Format: SRAM
• Technology: SRAM - Asynchronous
• Memory Size: 64Kb (8K x 8)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: 55ns
• Access Time: 55ns
• Voltage - Supply: 2.7 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Through Hole
• Package / Case: -
• Supplier Device Package: -

pacchetto: -

MT29F16G08CBACBWP-12:C TR

Micron Technology Inc.

IC FLASH 16GBIT 48TSOP

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NAND
• Memory Size: 16Gb (2G x 8)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C (TA)
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

pacchetto: -

CY7C10212CV33-12BAXE

Cypress Semiconductor Corp

IC SRAM 1MBIT 12NS 48FBGA

• Memory Type: Volatile
• Memory Format: SRAM
• Technology: SRAM - Asynchronous
• Memory Size: 1Mb (64K x 16)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: 12ns
• Access Time: 12ns
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 48-TFBGA
• Supplier Device Package: 48-FBGA (7x7)

pacchetto: 48-TFBGA

MT46H64M16LFCK-5 IT:A

Micron Technology Inc.

IC SDRAM 1GBIT 200MHZ 60VFBGA

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM - Mobile LPDDR
• Memory Size: 1Gb (64M x 16)
• Memory Interface: Parallel
• Clock Frequency: 200MHz
• Write Cycle Time - Word, Page: 15ns
• Access Time: 5.0ns
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 60-VFBGA
• Supplier Device Package: 60-VFBGA (10x11.5)

pacchetto: 60-VFBGA

IDT70T3399S166DD

IDT, Integrated Device Technology Inc

IC SRAM 2MBIT 166MHZ 144TQFP

• Memory Type: Volatile
• Memory Format: SRAM
• Technology: SRAM - Dual Port, Synchronous
• Memory Size: 2Mb (128K x 18)
• Memory Interface: Parallel
• Clock Frequency: 166MHz
• Write Cycle Time - Word, Page: -
• Access Time: 3.6ns
• Voltage - Supply: 2.4 V ~ 2.6 V
• Operating Temperature: 0°C ~ 70°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 144-LQFP Exposed Pad
• Supplier Device Package: 144-TQFP (20x20)

pacchetto: 144-LQFP Exposed Pad

AT34C02-10TI-1.8-T

Microchip Technology

IC EEPROM 2KBIT 400KHZ 8TSSOP

• Memory Type: Non-Volatile
• Memory Format: EEPROM
• Technology: EEPROM
• Memory Size: 2Kb (256 x 8)
• Memory Interface: I2C
• Clock Frequency: 400kHz
• Write Cycle Time - Word, Page: 10ms
• Access Time: 900ns
• Voltage - Supply: 1.8 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 8-TSSOP (0.173", 4.40mm Width)
• Supplier Device Package: 8-TSSOP

pacchetto: 8-TSSOP (0.173", 4.40mm Width)

AT29LV020-20JC

Microchip Technology

IC FLASH 2MBIT 200NS 32PLCC

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH
• Memory Size: 2Mb (256K x 8)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: 20ms
• Access Time: 200ns
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C (TC)
• Mounting Type: Surface Mount
• Package / Case: 32-LCC (J-Lead)
• Supplier Device Package: 32-PLCC

pacchetto: 32-LCC (J-Lead)

AT28C256F-15SI

Microchip Technology

IC EEPROM 256KBIT 150NS 28SOIC

• Memory Type: Non-Volatile
• Memory Format: EEPROM
• Technology: EEPROM
• Memory Size: 256Kb (32K x 8)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: 3ms
• Access Time: 150ns
• Voltage - Supply: 4.5 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C (TC)
• Mounting Type: Surface Mount
• Package / Case: 28-SOIC (0.295", 7.50mm Width)
• Supplier Device Package: 28-SOIC

pacchetto: 28-SOIC (0.295", 7.50mm Width)

70V657S12DR

IDT, Integrated Device Technology Inc

IC SRAM 1.125MBIT 12NS 208QFP

• Memory Type: Volatile
• Memory Format: SRAM
• Technology: SRAM - Dual Port, Asynchronous
• Memory Size: 1.125Mb (32K x 36)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: 12ns
• Access Time: 12ns
• Voltage - Supply: 3.15 V ~ 3.45 V
• Operating Temperature: 0°C ~ 70°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 208-BFQFP
• Supplier Device Package: 208-PQFP (28x28)

pacchetto: 208-BFQFP

MT40A1G8WE-083E AUT:B TR

Micron Technology Inc.

IC SDRAM 8GBIT 1.2GHZ 78BGA

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM - DDR4
• Memory Size: 8Gb (1G x 8)
• Memory Interface: Parallel
• Clock Frequency: 1.2GHz
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: 1.14 V ~ 1.26 V
• Operating Temperature: -40°C ~ 125°C (TC)
• Mounting Type: Surface Mount
• Package / Case: 78-TFBGA
• Supplier Device Package: 78-FBGA (8x12)

pacchetto: 78-TFBGA

71321LA25JGI8

IDT, Integrated Device Technology Inc

IC SRAM 16KBIT 25NS 52PLCC

• Memory Type: Volatile
• Memory Format: SRAM
• Technology: SRAM - Dual Port, Asynchronous
• Memory Size: 16Kb (2K x 8)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: 25ns
• Access Time: 25ns
• Voltage - Supply: 4.5 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 52-LCC (J-Lead)
• Supplier Device Package: 52-PLCC (19.13x19.13)

pacchetto: 52-LCC (J-Lead)

EDW4032BABG-60-F-D

Micron Technology Inc.

IC SGRAM 4GBIT 1.5GHZ 170FBGA

• Memory Type: Volatile
• Memory Format: RAM
• Technology: SGRAM - GDDR5
• Memory Size: 4Gb (128M x 32)
• Memory Interface: Parallel
• Clock Frequency: 1.5GHz
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: 1.31 V ~ 1.65 V
• Operating Temperature: 0°C ~ 95°C (TC)
• Mounting Type: Surface Mount
• Package / Case: 170-TFBGA
• Supplier Device Package: 170-FBGA (12x14)

pacchetto: 170-TFBGA

IS42S32200L-6BI-TR

ISSI, Integrated Silicon Solution Inc

IC SDRAM 64MBIT 166MHZ 90BGA

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM
• Memory Size: 64Mb (2M x 32)
• Memory Interface: Parallel
• Clock Frequency: 166MHz
• Write Cycle Time - Word, Page: -
• Access Time: 5.4ns
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 90-TFBGA
• Supplier Device Package: 90-TFBGA (8x13)

pacchetto: 90-TFBGA

71V424S15YGI8

IDT, Integrated Device Technology Inc

IC SRAM 4MBIT 15NS 36SOJ

• Memory Type: Volatile
• Memory Format: SRAM
• Technology: SRAM - Asynchronous
• Memory Size: 4Mb (512K x 8)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: 15ns
• Access Time: 15ns
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 36-BSOJ (0.400", 10.16mm Width)
• Supplier Device Package: 36-SOJ

pacchetto: 36-BSOJ (0.400", 10.16mm Width)

IS62C25616BL-45TLI-TR

ISSI, Integrated Silicon Solution Inc

IC SRAM 4MBIT 45NS 44TSOP

• Memory Type: Volatile
• Memory Format: SRAM
• Technology: SRAM - Asynchronous
• Memory Size: 4Mb (256K x 16)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: 45ns
• Access Time: 45ns
• Voltage - Supply: 4.5 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 44-TSOP (0.400", 10.16mm Width)
• Supplier Device Package: 44-TSOP2

pacchetto: 44-TSOP (0.400", 10.16mm Width)

N25Q032A13ESEA0F TR

Micron Technology Inc.

IC FLASH 32MBIT 108MHZ 8SO

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NOR
• Memory Size: 32Mb (8M x 4)
• Memory Interface: SPI
• Clock Frequency: 108MHz
• Write Cycle Time - Word, Page: 8ms, 5ms
• Access Time: -
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SOP2

pacchetto: 8-SOIC (0.154", 3.90mm Width)

CY15B004J-SXAT

Cypress Semiconductor Corp

F-RAM MEMORY SERIAL

• Memory Type: Non-Volatile
• Memory Format: FRAM
• Technology: FRAM (Ferroelectric RAM)
• Memory Size: 4Kb (512 x 8)
• Memory Interface: I2C
• Clock Frequency: 1MHz
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: 2.7 V ~ 3.65 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

pacchetto: -

SFEM032GB1EA1TO-I-LF-111-STD

Swissbit

INDUSTRIAL EMBEDDED MMC, EM-20,

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NAND
• Memory Size: 256Gb (32G x 8)
• Memory Interface: Parallel
• Clock Frequency: 400MHz
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

pacchetto: -

AT25SF041-MAHD-T

Adesto Technologies

IC FLASH 4MBIT 104MHZ 8UDFN

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH
• Memory Size: 4Mb (512K x 8)
• Memory Interface: SPI
• Clock Frequency: 104MHz
• Write Cycle Time - Word, Page: 5µs, 2.5ms
• Access Time: -
• Voltage - Supply: 2.5 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C (TC)
• Mounting Type: Surface Mount
• Package / Case: 8-UFDFN Exposed Pad
• Supplier Device Package: 8-UDFN (2x3)

pacchetto: 8-UFDFN Exposed Pad

M95160-RMB6TG

STMicroelectronics

IC EEPROM 16KBIT 5MHZ 8UFDFPN

• Memory Type: Non-Volatile
• Memory Format: EEPROM
• Technology: EEPROM
• Memory Size: 16Kb (2K x 8)
• Memory Interface: SPI
• Clock Frequency: 10MHz
• Write Cycle Time - Word, Page: 5ms
• Access Time: -
• Voltage - Supply: 1.8 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 8-UFDFN Exposed Pad
• Supplier Device Package: 8-UFDFPN (2x3)

pacchetto: 8-UFDFN Exposed Pad

BR24L02FVJ-WE2

Rohm Semiconductor

IC EEPROM 2KBIT 400KHZ 8TSSOP-BJ

• Memory Type: Non-Volatile
• Memory Format: EEPROM
• Technology: EEPROM
• Memory Size: 2Kb (256 x 8)
• Memory Interface: I2C
• Clock Frequency: 400kHz
• Write Cycle Time - Word, Page: 5ms
• Access Time: -
• Voltage - Supply: 1.8 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
• Supplier Device Package: 8-TSSOP-BJ

pacchetto: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

M24C64-FMC6TG

STMicroelectronics

IC EEPROM 64KBIT 400KHZ 8MLP

• Memory Type: Non-Volatile
• Memory Format: EEPROM
• Technology: EEPROM
• Memory Size: 64Kb (8K x 8)
• Memory Interface: I2C
• Clock Frequency: 1MHz
• Write Cycle Time - Word, Page: 5ms
• Access Time: 450ns
• Voltage - Supply: 1.7 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 8-UFDFN Exposed Pad
• Supplier Device Package: 8-UFDFPN (2x3)

pacchetto: 8-UFDFN Exposed Pad

S29GL256S90FHI010

Cypress Semiconductor Corp

IC FLASH 256MBIT 90NS 64BGA

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NOR
• Memory Size: 256Mb (16M x 16)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: 60ns
• Access Time: 90ns
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 64-LBGA
• Supplier Device Package: 64-Fortified BGA (13x11)

pacchetto: 64-LBGA

CY14B256LA-SZ45XI

Cypress Semiconductor Corp

IC NVSRAM 256KBIT 45NS 32SOIC

• Memory Type: Non-Volatile
• Memory Format: NVSRAM
• Technology: NVSRAM (Non-Volatile SRAM)
• Memory Size: 256Kb (32K x 8)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: 45ns
• Access Time: 45ns
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 32-SOIC (0.295", 7.50mm Width)
• Supplier Device Package: 32-SOIC

pacchetto: 32-SOIC (0.295", 7.50mm Width)

S34ML02G100BHI003

Cypress Semiconductor Corp

IC FLASH 2G PARALLEL 63BGA

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NAND
• Memory Size: 2Gb (256M x 8)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: 25ns
• Access Time: -
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 63-VFBGA
• Supplier Device Package: 63-BGA (11x9)

pacchetto: 63-VFBGA

S25FL256SAGMFV003

Cypress Semiconductor Corp

IC FLASH 256M SPI 133MHZ 16SOIC

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NOR
• Memory Size: 256Mb (32M x 8)
• Memory Interface: SPI - Quad I/O
• Clock Frequency: 133MHz
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 105°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 16-SOIC (0.295", 7.50mm Width)
• Supplier Device Package: 16-SOIC

pacchetto: 16-SOIC (0.295", 7.50mm Width)

S25FS256SDSBHI200

Cypress Semiconductor Corp

IC FLASH 256M SPI 80MHZ 24BGA

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NOR
• Memory Size: 256Mb (32M x 8)
• Memory Interface: SPI - Quad I/O
• Clock Frequency: 80MHz
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: 1.7 V ~ 2 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 24-TBGA
• Supplier Device Package: 24-BGA (8x6)

pacchetto: 24-TBGA

EDB4064B4PB-1DIT-F-D TR

Micron Technology Inc.

IC DRAM 4G PARALLEL 533MHZ

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM - Mobile LPDDR2
• Memory Size: 4Gb (64M x 64)
• Memory Interface: Parallel
• Clock Frequency: 533MHz
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: 1.14 V ~ 1.95 V
• Operating Temperature: -40°C ~ 85°C (TC)
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

pacchetto: -

MT29F4G08ABAFAM70A3WC1

Micron Technology Inc.

SLC 4G DIE 512MX8

• Memory Type: -
• Memory Format: -
• Technology: -
• Memory Size: -
• Memory Interface: -
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

pacchetto: -

MT53D4DCNZ-DC

Micron Technology Inc.

SPECIAL/CUSTOM LPDDR4

• Memory Type: -
• Memory Format: -
• Technology: -
• Memory Size: -
• Memory Interface: -
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

pacchetto: -