Pagina 378 - Memoria | Circuiti integrati (CI) | Heisener Electronics
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Memoria

Record 62.144
Pagina  378/2.072
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
Azione
Quantità
Memory Format
Technology
Memory Size
Memory Interface
Clock Frequency
Write Cycle Time - Word, Page
Access Time
Voltage - Supply
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
EDBA232B2PF-1D-F-R TR
Micron Technology Inc.

IC SDRAM 16GBIT 533MHZ FBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPDDR2
  • Memory Size: 16Gb (512M x 32)
  • Memory Interface: Parallel
  • Clock Frequency: 533MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.14 V ~ 1.95 V
  • Operating Temperature: -30°C ~ 85°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 168-TFBGA
  • Supplier Device Package: 168-FBGA (12x12)
pacchetto: 168-TFBGA
Azione6.832
DRAM
SDRAM - Mobile LPDDR2
16Gb (512M x 32)
Parallel
533MHz
-
-
1.14 V ~ 1.95 V
-30°C ~ 85°C (TC)
Surface Mount
168-TFBGA
168-FBGA (12x12)
CY14B256Q1A-SXIT
Cypress Semiconductor Corp

IC NVSRAM 256KBIT 40MHZ 8SOIC

  • Memory Type: Non-Volatile
  • Memory Format: NVSRAM
  • Technology: NVSRAM (Non-Volatile SRAM)
  • Memory Size: 256Kb (32K x 8)
  • Memory Interface: SPI
  • Clock Frequency: 40MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione5.952
NVSRAM
NVSRAM (Non-Volatile SRAM)
256Kb (32K x 8)
SPI
40MHz
-
-
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
CY7C1314SV18-250BZC
Cypress Semiconductor Corp

IC SRAM 18MBIT 250MHZ 165FBGA

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Synchronous, QDR II
  • Memory Size: 18Mb (512K x 36)
  • Memory Interface: Parallel
  • Clock Frequency: 250MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.7 V ~ 1.9 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 165-LBGA
  • Supplier Device Package: 165-FBGA (13x15)
pacchetto: 165-LBGA
Azione2.128
SRAM
SRAM - Synchronous, QDR II
18Mb (512K x 36)
Parallel
250MHz
-
-
1.7 V ~ 1.9 V
0°C ~ 70°C (TA)
Surface Mount
165-LBGA
165-FBGA (13x15)
IDT71V3577SA75BGGI8
IDT, Integrated Device Technology Inc

IC SRAM 4.5MBIT 7.5NS 119BGA

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Synchronous
  • Memory Size: 4.5Mb (128K x 36)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: 7.5ns
  • Voltage - Supply: 3.135 V ~ 3.465 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 119-BGA
  • Supplier Device Package: 119-PBGA (14x22)
pacchetto: 119-BGA
Azione7.056
SRAM
SRAM - Synchronous
4.5Mb (128K x 36)
Parallel
-
-
7.5ns
3.135 V ~ 3.465 V
-40°C ~ 85°C (TA)
Surface Mount
119-BGA
119-PBGA (14x22)
IDT71V3557SA75BQ
IDT, Integrated Device Technology Inc

IC SRAM 4.5MBIT 7.5NS 165CABGA

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Synchronous ZBT
  • Memory Size: 4.5Mb (128K x 36)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: 7.5ns
  • Voltage - Supply: 3.135 V ~ 3.465 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 165-TBGA
  • Supplier Device Package: 165-CABGA (13x15)
pacchetto: 165-TBGA
Azione3.136
SRAM
SRAM - Synchronous ZBT
4.5Mb (128K x 36)
Parallel
-
-
7.5ns
3.135 V ~ 3.465 V
0°C ~ 70°C (TA)
Surface Mount
165-TBGA
165-CABGA (13x15)
IDT71V2556XS133PF
IDT, Integrated Device Technology Inc

IC SRAM 4.5MBIT 133MHZ 100TQFP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Synchronous ZBT
  • Memory Size: 4.5Mb (128K x 36)
  • Memory Interface: Parallel
  • Clock Frequency: 133MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 4.2ns
  • Voltage - Supply: 3.135 V ~ 3.465 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 100-LQFP
  • Supplier Device Package: 100-TQFP (14x14)
pacchetto: 100-LQFP
Azione6.320
SRAM
SRAM - Synchronous ZBT
4.5Mb (128K x 36)
Parallel
133MHz
-
4.2ns
3.135 V ~ 3.465 V
0°C ~ 70°C (TA)
Surface Mount
100-LQFP
100-TQFP (14x14)
IDT70825L20PFI
IDT, Integrated Device Technology Inc

IC SARAM 128KBIT 20NS 80TQFP

  • Memory Type: Volatile
  • Memory Format: RAM
  • Technology: SARAM
  • Memory Size: 128Kb (8K x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 20ns
  • Access Time: 20ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 80-LQFP
  • Supplier Device Package: 80-TQFP (14x14)
pacchetto: 80-LQFP
Azione2.272
RAM
SARAM
128Kb (8K x 16)
Parallel
-
20ns
20ns
4.5 V ~ 5.5 V
-40°C ~ 85°C (TA)
Surface Mount
80-LQFP
80-TQFP (14x14)
CY7C1346H-166AXC
Cypress Semiconductor Corp

IC SRAM 2MBIT 166MHZ 100TQFP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Synchronous
  • Memory Size: 2Mb (64K x 36)
  • Memory Interface: Parallel
  • Clock Frequency: 166MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 3.5ns
  • Voltage - Supply: 3.15 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 100-LQFP
  • Supplier Device Package: 100-TQFP (14x20)
pacchetto: 100-LQFP
Azione2.560
SRAM
SRAM - Synchronous
2Mb (64K x 36)
Parallel
166MHz
-
3.5ns
3.15 V ~ 3.6 V
0°C ~ 70°C (TA)
Surface Mount
100-LQFP
100-TQFP (14x20)
MT47H128M8HQ-187E:E TR
Micron Technology Inc.

IC SDRAM 1GBIT 533MHZ 60FBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR2
  • Memory Size: 1Gb (128M x 8)
  • Memory Interface: Parallel
  • Clock Frequency: 533MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 350ps
  • Voltage - Supply: 1.7 V ~ 1.9 V
  • Operating Temperature: 0°C ~ 85°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 60-FBGA
  • Supplier Device Package: 60-FBGA (8x11.5)
pacchetto: 60-FBGA
Azione5.312
DRAM
SDRAM - DDR2
1Gb (128M x 8)
Parallel
533MHz
15ns
350ps
1.7 V ~ 1.9 V
0°C ~ 85°C (TC)
Surface Mount
60-FBGA
60-FBGA (8x11.5)
IS62WV51216ALL-70BI
ISSI, Integrated Silicon Solution Inc

IC SRAM 8MBIT 70NS 48MINIBGA

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 8Mb (512K x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 70ns
  • Access Time: 70ns
  • Voltage - Supply: 2.5 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 48-TFBGA
  • Supplier Device Package: 48-miniBGA (6x8)
pacchetto: 48-TFBGA
Azione6.480
SRAM
SRAM - Asynchronous
8Mb (512K x 16)
Parallel
-
70ns
70ns
2.5 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
48-TFBGA
48-miniBGA (6x8)
AT25640A-10TI-2.7
Microchip Technology

IC EEPROM 64KBIT 20MHZ 8TSSOP

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 64Kb (8K x 8)
  • Memory Interface: SPI
  • Clock Frequency: 20MHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 8-TSSOP
pacchetto: 8-TSSOP (0.173", 4.40mm Width)
Azione3.776
EEPROM
EEPROM
64Kb (8K x 8)
SPI
20MHz
5ms
-
2.7 V ~ 5.5 V
-40°C ~ 85°C (TA)
Surface Mount
8-TSSOP (0.173", 4.40mm Width)
8-TSSOP
AT93C66-10PI-1.8
Microchip Technology

IC EEPROM 4KBIT 2MHZ 8DIP

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 4Kb (512 x 8, 256 x 16)
  • Memory Interface: SPI
  • Clock Frequency: 2MHz
  • Write Cycle Time - Word, Page: 10ms
  • Access Time: -
  • Voltage - Supply: 1.8 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Through Hole
  • Package / Case: 8-DIP (0.300", 7.62mm)
  • Supplier Device Package: 8-PDIP
pacchetto: 8-DIP (0.300", 7.62mm)
Azione6.768
EEPROM
EEPROM
4Kb (512 x 8, 256 x 16)
SPI
2MHz
10ms
-
1.8 V ~ 5.5 V
-40°C ~ 85°C (TA)
Through Hole
8-DIP (0.300", 7.62mm)
8-PDIP
AT45DB161B-TC-2.5
Microchip Technology

IC FLASH 16MBIT 15MHZ 28TSOP

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH
  • Memory Size: 16Mb (528 Bytes x 4096 pages)
  • Memory Interface: SPI
  • Clock Frequency: 15MHz
  • Write Cycle Time - Word, Page: 14ms
  • Access Time: -
  • Voltage - Supply: 2.5 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 28-TSSOP (0.465", 11.80mm Width)
  • Supplier Device Package: 28-TSOP
pacchetto: 28-TSSOP (0.465", 11.80mm Width)
Azione7.856
FLASH
FLASH
16Mb (528 Bytes x 4096 pages)
SPI
15MHz
14ms
-
2.5 V ~ 3.6 V
0°C ~ 70°C (TC)
Surface Mount
28-TSSOP (0.465", 11.80mm Width)
28-TSOP
IS49RL18320-093EBLI
ISSI, Integrated Silicon Solution Inc

IC DRAM 576MBIT 1066MHZ 168BGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: DRAM
  • Memory Size: 576Mb (32M x 18)
  • Memory Interface: Parallel
  • Clock Frequency: 1.066GHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 8ns
  • Voltage - Supply: 1.28 V ~ 1.42 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 168-LBGA
  • Supplier Device Package: 168-FC(LF)BGA (13.5x13.5)
pacchetto: 168-LBGA
Azione3.808
DRAM
DRAM
576Mb (32M x 18)
Parallel
1.066GHz
-
8ns
1.28 V ~ 1.42 V
-40°C ~ 85°C (TA)
Surface Mount
168-LBGA
168-FC(LF)BGA (13.5x13.5)
CY14V116N-BZ30XIT
Cypress Semiconductor Corp

IC NVSRAM 16MBIT 30NS 165FBGA

  • Memory Type: Non-Volatile
  • Memory Format: NVSRAM
  • Technology: NVSRAM (Non-Volatile SRAM)
  • Memory Size: 16Mb (1M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 30ns
  • Access Time: 30ns
  • Voltage - Supply: 1.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 165-LBGA
  • Supplier Device Package: 165-FBGA (15x17)
pacchetto: 165-LBGA
Azione4.000
NVSRAM
NVSRAM (Non-Volatile SRAM)
16Mb (1M x 16)
Parallel
-
30ns
30ns
1.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
165-LBGA
165-FBGA (15x17)
CY7C1248KV18-400BZXC
Cypress Semiconductor Corp

IC SRAM 36MBIT 400MHZ 165FBGA

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Synchronous, DDR II+
  • Memory Size: 36Mb (2M x 18)
  • Memory Interface: Parallel
  • Clock Frequency: 400MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.7 V ~ 1.9 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 165-LBGA
  • Supplier Device Package: 165-FBGA (13x15)
pacchetto: 165-LBGA
Azione5.616
SRAM
SRAM - Synchronous, DDR II+
36Mb (2M x 18)
Parallel
400MHz
-
-
1.7 V ~ 1.9 V
0°C ~ 70°C (TA)
Surface Mount
165-LBGA
165-FBGA (13x15)
71V321S25J
IDT, Integrated Device Technology Inc

IC SRAM 16KBIT 25NS 52PLCC

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Dual Port, Asynchronous
  • Memory Size: 16Kb (2K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 25ns
  • Access Time: 25ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 52-LCC (J-Lead)
  • Supplier Device Package: 52-PLCC (19.13x19.13)
pacchetto: 52-LCC (J-Lead)
Azione5.376
SRAM
SRAM - Dual Port, Asynchronous
16Kb (2K x 8)
Parallel
-
25ns
25ns
3 V ~ 3.6 V
0°C ~ 70°C (TA)
Surface Mount
52-LCC (J-Lead)
52-PLCC (19.13x19.13)
71321SA35J8
IDT, Integrated Device Technology Inc

IC SRAM 16KBIT 35NS 52PLCC

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Dual Port, Asynchronous
  • Memory Size: 16Kb (2K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 35ns
  • Access Time: 35ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 52-LCC (J-Lead)
  • Supplier Device Package: 52-PLCC (19.13x19.13)
pacchetto: 52-LCC (J-Lead)
Azione7.216
SRAM
SRAM - Dual Port, Asynchronous
16Kb (2K x 8)
Parallel
-
35ns
35ns
4.5 V ~ 5.5 V
0°C ~ 70°C (TA)
Surface Mount
52-LCC (J-Lead)
52-PLCC (19.13x19.13)
71V3578S150PFG8
IDT, Integrated Device Technology Inc

IC SRAM 4.5MBIT 150MHZ 100TQFP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Synchronous
  • Memory Size: 4.5Mb (256K x 18)
  • Memory Interface: Parallel
  • Clock Frequency: 150MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 3.8ns
  • Voltage - Supply: 3.135 V ~ 3.465 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 100-LQFP
  • Supplier Device Package: 100-TQFP (14x14)
pacchetto: 100-LQFP
Azione2.192
SRAM
SRAM - Synchronous
4.5Mb (256K x 18)
Parallel
150MHz
-
3.8ns
3.135 V ~ 3.465 V
0°C ~ 70°C (TA)
Surface Mount
100-LQFP
100-TQFP (14x14)
BR24C32-DW6TP
Rohm Semiconductor

IC EEPROM 32KBIT 400KHZ 8TSSOP

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 32Kb (4K x 8)
  • Memory Interface: I2C
  • Clock Frequency: 400kHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: -
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 8-TSSOP
pacchetto: 8-TSSOP (0.173", 4.40mm Width)
Azione2.640
EEPROM
EEPROM
32Kb (4K x 8)
I2C
400kHz
5ms
-
4.5 V ~ 5.5 V
-40°C ~ 85°C (TA)
Surface Mount
8-TSSOP (0.173", 4.40mm Width)
8-TSSOP
IS43R16320F-5BL
ISSI, Integrated Silicon Solution Inc

IC DRAM 512M PARALLEL 200MHZ

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR
  • Memory Size: 512Mb (32M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: 200MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 700ps
  • Voltage - Supply: 2.3 V ~ 2.7 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 60-TFBGA
  • Supplier Device Package: 60-TFBGA (13x8)
pacchetto: 60-TFBGA
Azione4.240
DRAM
SDRAM - DDR
512Mb (32M x 16)
Parallel
200MHz
15ns
700ps
2.3 V ~ 2.7 V
0°C ~ 70°C (TA)
Surface Mount
60-TFBGA
60-TFBGA (13x8)
S98WS512P00FW0020
Cypress Semiconductor Corp

IC GATE NOR

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Azione2.992
-
-
-
-
-
-
-
-
-
-
-
-
R1RW0408DGE-2LR#B0
Renesas Electronics America

IC SRAM 4M FAST 36-SOJ

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM
  • Memory Size: 4Mb (512K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 12ns
  • Access Time: 12ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 36-BSOJ (0.400", 10.16mm Width)
  • Supplier Device Package: 36-SOJ
pacchetto: 36-BSOJ (0.400", 10.16mm Width)
Azione4.400
SRAM
SRAM
4Mb (512K x 8)
Parallel
-
12ns
12ns
3 V ~ 3.6 V
0°C ~ 70°C (TA)
Surface Mount
36-BSOJ (0.400", 10.16mm Width)
36-SOJ
S29PL032J70BFI120A
Cypress Semiconductor Corp

IC FLASH MEM NOR 48FBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 32Mb (2M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 70ns
  • Access Time: 70ns
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Package / Case: 48-VFBGA
  • Supplier Device Package: 48-FBGA (8.15x6.15)
pacchetto: 48-VFBGA
Azione3.152
FLASH
FLASH - NOR
32Mb (2M x 16)
Parallel
-
70ns
70ns
2.7 V ~ 3.6 V
-40°C ~ 85°C
Surface Mount
48-VFBGA
48-FBGA (8.15x6.15)
93LC46CT-E/SN15KVAO
Microchip Technology

APG STANDARD

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 1Kb (128 x 8, 64 x 16)
  • Memory Interface: SPI
  • Clock Frequency: 2MHz
  • Write Cycle Time - Word, Page: 6ms
  • Access Time: -
  • Voltage - Supply: 2.5V ~ 5.5V
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione2.928
EEPROM
EEPROM
1Kb (128 x 8, 64 x 16)
SPI
2MHz
6ms
-
2.5V ~ 5.5V
-40°C ~ 125°C (TA)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
IS46TR16640CL-107MBLA2
ISSI, Integrated Silicon Solution Inc

IC DRAM 1GBIT PAR 96TWBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR3L
  • Memory Size: 1Gbit
  • Memory Interface: Parallel
  • Clock Frequency: 933 MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 20 ns
  • Voltage - Supply: 1.283V ~ 1.45V
  • Operating Temperature: -40°C ~ 105°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 96-TFBGA
  • Supplier Device Package: 96-TWBGA (9x13)
pacchetto: -
Request a Quote
DRAM
SDRAM - DDR3L
1Gbit
Parallel
933 MHz
15ns
20 ns
1.283V ~ 1.45V
-40°C ~ 105°C (TC)
Surface Mount
96-TFBGA
96-TWBGA (9x13)
S25HS512TDPNHI013
Infineon Technologies

IC FLASH 512MBIT SPI/QUAD 8WSON

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR (SLC)
  • Memory Size: 512Mbit
  • Memory Interface: SPI - Quad I/O, QPI
  • Clock Frequency: 133 MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.7V ~ 2V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-WDFN Exposed Pad
  • Supplier Device Package: 8-WSON (6x8)
pacchetto: -
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FLASH
FLASH - NOR (SLC)
512Mbit
SPI - Quad I/O, QPI
133 MHz
-
-
1.7V ~ 2V
-40°C ~ 85°C (TA)
Surface Mount
8-WDFN Exposed Pad
8-WSON (6x8)
W66BP6NBQAGJ-TR
Winbond Electronics

2GB LPDDR4, X16, 1866MHZ, -40C~1

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPDDR4
  • Memory Size: 2Gbit
  • Memory Interface: LVSTL_11
  • Clock Frequency: 1.867 GHz
  • Write Cycle Time - Word, Page: 18ns
  • Access Time: 3.6 ns
  • Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V
  • Operating Temperature: -40°C ~ 105°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 200-TFBGA
  • Supplier Device Package: 200-TFBGA (10x14.5)
pacchetto: -
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DRAM
SDRAM - Mobile LPDDR4
2Gbit
LVSTL_11
1.867 GHz
18ns
3.6 ns
1.06V ~ 1.17V, 1.7V ~ 1.95V
-40°C ~ 105°C (TC)
Surface Mount
200-TFBGA
200-TFBGA (10x14.5)
MTFC512GBCAXHL-WT
Micron Technology Inc.

UFS 4T

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacchetto: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
GD25LQ128DW2GR
GigaDevice Semiconductor (HK) Limited

IC FLASH 128MBIT SPI/QUAD 8WSON

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR (SLC)
  • Memory Size: 128Mbit
  • Memory Interface: SPI - Quad I/O, QPI
  • Clock Frequency: 104 MHz
  • Write Cycle Time - Word, Page: 2.4ms
  • Access Time: 6 ns
  • Voltage - Supply: 1.65V ~ 2V
  • Operating Temperature: -40°C ~ 105°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-WDFN Exposed Pad
  • Supplier Device Package: 8-WSON (5x6)
pacchetto: -
Request a Quote
FLASH
FLASH - NOR (SLC)
128Mbit
SPI - Quad I/O, QPI
104 MHz
2.4ms
6 ns
1.65V ~ 2V
-40°C ~ 105°C (TA)
Surface Mount
8-WDFN Exposed Pad
8-WSON (5x6)