Immagine |
Numero di parte |
Produttore |
Descrizione |
pacchetto |
Azione |
Quantità |
Memory Format | Technology | Memory Size | Memory Interface | Clock Frequency | Write Cycle Time - Word, Page | Access Time | Voltage - Supply | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Cypress Semiconductor Corp |
IC FLASH 1GBIT 120NS 64FBGA
|
pacchetto: 64-LBGA |
Azione3.488 |
|
FLASH | FLASH - NOR | 1Gb (128M x 8) | Parallel | - | - | - | 2.7 V ~ 3.6 V | -40°C ~ 85°C (TA) | Surface Mount | 64-LBGA | 64-FBGA (11x13) |
||
Micron Technology Inc. |
IC SDRAM 8GBIT 1.6GHZ 200FBGA
|
pacchetto: - |
Azione2.176 |
|
DRAM | SDRAM - Mobile LPDDR4 | 8Gb (256M x 32) | - | 1600MHz | - | - | 1.1V | -40°C ~ 95°C (TC) | - | - | - |
||
Micron Technology Inc. |
IC FLASH 256GBIT 169VFBGA
|
pacchetto: 169-VFBGA |
Azione4.240 |
|
FLASH | FLASH - NAND | 256Gb (32G x 8) | MMC | - | - | - | 2.7 V ~ 3.6 V | -25°C ~ 85°C (TA) | Surface Mount | 169-VFBGA | 169-VFBGA |
||
ON Semiconductor |
IC FLASH 1MBIT 120NS 32PLCC
|
pacchetto: 32-LCC (J-Lead) |
Azione2.448 |
|
FLASH | FLASH | 1Mb (128K x 8) | Parallel | - | 120ns | 120ns | 4.5 V ~ 5.5 V | -40°C ~ 85°C (TA) | Surface Mount | 32-LCC (J-Lead) | 32-PLCC (11.43x13.97) |
||
IDT, Integrated Device Technology Inc |
IC SRAM 4MBIT 12NS 44SOJ
|
pacchetto: 44-BSOJ (0.400", 10.16mm Width) |
Azione2.704 |
|
SRAM | SRAM - Asynchronous | 4Mb (256K x 16) | Parallel | - | 12ns | 12ns | 3 V ~ 3.6 V | -40°C ~ 85°C (TA) | Surface Mount | 44-BSOJ (0.400", 10.16mm Width) | 44-SOJ |
||
IDT, Integrated Device Technology Inc |
IC SRAM 256KBIT 10NS 28SOJ
|
pacchetto: 28-BSOJ (0.300", 7.62mm Width) |
Azione5.392 |
|
SRAM | SRAM - Asynchronous | 256Kb (32K x 8) | Parallel | - | 10ns | 10ns | 3 V ~ 3.6 V | -40°C ~ 85°C (TA) | Surface Mount | 28-BSOJ (0.300", 7.62mm Width) | 28-SOJ |
||
IDT, Integrated Device Technology Inc |
IC SRAM 1MBIT 15NS 48CABGA
|
pacchetto: 48-LFBGA |
Azione3.696 |
|
SRAM | SRAM - Asynchronous | 1Mb (64K x 16) | Parallel | - | 15ns | 15ns | 2.375 V ~ 2.625 V | -40°C ~ 85°C (TA) | Surface Mount | 48-LFBGA | 48-CABGA (7x7) |
||
Microchip Technology |
IC FLASH 1MBIT 150NS 44PLCC
|
pacchetto: 44-LCC (J-Lead) |
Azione10.404 |
|
FLASH | FLASH | 1Mb (64K x 16) | Parallel | - | 10ms | 150ns | 4.5 V ~ 5.5 V | 0°C ~ 70°C (TC) | Surface Mount | 44-LCC (J-Lead) | 44-PLCC (16.59x16.59) |
||
Microchip Technology |
IC EEPROM 4MBIT 200NS 32FP
|
pacchetto: 32-CFlatpack |
Azione4.704 |
|
EEPROM | EEPROM | 4Mb (512K x 8) | Parallel | - | 10ms | 200ns | 4.5 V ~ 5.5 V | -40°C ~ 85°C (TC) | Surface Mount | 32-CFlatpack | 32-Flatpack, Ceramic Bottom-Brazed |
||
ISSI, Integrated Silicon Solution Inc |
IC SRAM 72MBIT 250MHZ 100LQFP
|
pacchetto: 100-LQFP |
Azione2.464 |
|
SRAM | SRAM - Synchronous | 72Mb (2M x 36) | Parallel | 250MHz | - | 2.8ns | 2.375 V ~ 2.625 V | -40°C ~ 85°C (TA) | Surface Mount | 100-LQFP | 100-LQFP (14x20) |
||
IDT, Integrated Device Technology Inc |
IC SRAM 16KBIT 20NS 52PLCC
|
pacchetto: 52-LCC (J-Lead) |
Azione4.016 |
|
SRAM | SRAM - Dual Port, Asynchronous | 16Kb (2K x 8) | Parallel | - | 20ns | 20ns | 4.5 V ~ 5.5 V | 0°C ~ 70°C (TA) | Surface Mount | 52-LCC (J-Lead) | 52-PLCC (19.13x19.13) |
||
IDT, Integrated Device Technology Inc |
IC SRAM 8KBIT 100NS 52PLCC
|
pacchetto: 52-LCC (J-Lead) |
Azione5.808 |
|
SRAM | SRAM - Dual Port, Asynchronous | 8Kb (1K x 8) | Parallel | - | 100ns | 100ns | 4.5 V ~ 5.5 V | 0°C ~ 70°C (TA) | Surface Mount | 52-LCC (J-Lead) | 52-PLCC (19.13x19.13) |
||
Microchip Technology |
IC EEPROM 256KBIT 150NS 28SOIC
|
pacchetto: 28-SOIC (0.295", 7.50mm Width) |
Azione6.128 |
|
EEPROM | EEPROM | 256Kb (32K x 8) | Parallel | - | 3ms | 150ns | 4.5 V ~ 5.5 V | -40°C ~ 85°C (TC) | Surface Mount | 28-SOIC (0.295", 7.50mm Width) | 28-SOIC |
||
Micron Technology Inc. |
IC FLASH 512MBIT 133MHZ WLCSP
|
pacchetto: - |
Azione7.152 |
|
FLASH | FLASH - NOR | 512Mb (64M x 8) | SPI | 133MHz | 8ms, 2.8ms | - | 1.7 V ~ 2 V | -40°C ~ 85°C (TA) | - | - | - |
||
Cypress Semiconductor Corp |
NOR
|
pacchetto: - |
Azione6.848 |
|
FLASH | FLASH - NOR | 128Mb (16M x 8) | SPI - Quad I/O, QPI | 133MHz | - | - | 1.7 V ~ 2 V | -40°C ~ 105°C (TA) | - | - | - |
||
ISSI, Integrated Silicon Solution Inc |
IC SRAM 1MBIT 12NS 44SOJ
|
pacchetto: 44-BSOJ (0.400", 10.16mm Width) |
Azione3.712 |
|
SRAM | SRAM - Asynchronous | 1Mb (64K x 16) | Parallel | - | 12ns | 12ns | 3.135 V ~ 3.6 V | 0°C ~ 70°C (TA) | Surface Mount | 44-BSOJ (0.400", 10.16mm Width) | 44-SOJ |
||
Microchip Technology |
IC FLASH 2MBIT 40MHZ 8CSP
|
pacchetto: 8-UFBGA, CSPBGA |
Azione3.792 |
|
FLASH | FLASH | 2Mb (256K x 8) | SPI | 40MHz | 3.5ms | - | 1.65 V ~ 1.95 V | -40°C ~ 85°C (TA) | Surface Mount | 8-UFBGA, CSPBGA | 8-CSP |
||
Microchip Technology |
IC EEPROM 32KBIT 1MHZ 8UDFN
|
pacchetto: 8-UFDFN Exposed Pad |
Azione4.976 |
|
EEPROM | EEPROM | 32Kb (4K x 8) | I2C | 1MHz | 5ms | 550ns | 1.7 V ~ 5.5 V | -40°C ~ 85°C (TA) | Surface Mount | 8-UFDFN Exposed Pad | 8-UDFN (2x3) |
||
Maxim Integrated |
IC NVSRAM 1MBIT 70NS 34PCM
|
pacchetto: 34-PowerCap? Module |
Azione6.560 |
|
NVSRAM | NVSRAM (Non-Volatile SRAM) | 1Mb (128K x 8) | Parallel | - | 70ns | 70ns | 4.5 V ~ 5.5 V | 0°C ~ 70°C (TA) | Surface Mount | 34-PowerCap? Module | 34-PowerCap Module |
||
Cypress Semiconductor Corp |
IC NVSRAM 256KBIT 25NS 32SOIC
|
pacchetto: 32-SOIC (0.295", 7.50mm Width) |
Azione16.128 |
|
NVSRAM | NVSRAM (Non-Volatile SRAM) | 256Kb (32K x 8) | Parallel | - | 25ns | 25ns | 2.7 V ~ 3.6 V | -40°C ~ 85°C (TA) | Surface Mount | 32-SOIC (0.295", 7.50mm Width) | 32-SOIC |
||
Microchip Technology |
IC EEPROM 64KBIT 2MHZ 8SOIC
|
pacchetto: 8-SOIC (0.154", 3.90mm Width) |
Azione191.328 |
|
EEPROM | EEPROM | 64Kb (8K x 8) | SPI | 2MHz | 5ms | - | 2.5 V ~ 5.5 V | -40°C ~ 85°C (TA) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
||
Microchip Technology |
IC EEPROM 8K I2C 400KHZ WAFER
|
pacchetto: Die |
Azione5.424 |
|
EEPROM | EEPROM | 8Kb (256 x 8 x 4) | I²C | 400kHz | 5ms | 900ns | 1.7 V ~ 5.5 V | -40°C ~ 85°C (TA) | Surface Mount | Die | Die |
||
Cypress Semiconductor Corp |
IC 1 GB FLASH MEMORY
|
pacchetto: 64-LBGA |
Azione5.424 |
|
- | - | - | - | - | - | - | - | - | Surface Mount | 64-LBGA | 64-FBGA (13x11) |
||
Cypress Semiconductor Corp |
IC FLASH 1G PARALLEL 64BGA
|
pacchetto: 64-LBGA |
Azione3.952 |
|
FLASH | FLASH - NOR | 1Gb (64M x 16) | Parallel | - | 60ns | 110ns | 1.65 V ~ 3.6 V | -40°C ~ 85°C (TA) | Surface Mount | 64-LBGA | 64-FBGA (13x11) |
||
Cypress Semiconductor Corp |
IC FLASH 128M PARALLEL 44FBGA
|
pacchetto: 44-VFBGA |
Azione6.528 |
|
FLASH | FLASH - NOR | 128Mb (8M x 16) | Parallel | 108MHz | 60ns | 80ns | 1.7 V ~ 1.95 V | -25°C ~ 85°C (TA) | Surface Mount | 44-VFBGA | 44-FBGA (7.5x5) |
||
Rohm Semiconductor |
MICROWIRE BUS 16KBIT(1024X16BIT)
|
pacchetto: 8-SOIC (0.173", 4.40mm Width) |
Azione7.392 |
|
EEPROM | EEPROM | 16Kb (1K x 16) | SPI | 3MHz | 5ms | - | 1.7 V ~ 5.5 V | -40°C ~ 85°C (TA) | Surface Mount | 8-SOIC (0.173", 4.40mm Width) | 8-SOP |
||
Winbond Electronics |
IC FLASH MEMORY 32MB
|
pacchetto: - |
Azione2.992 |
|
- | - | - | - | - | - | - | - | - | - | - | - |
||
ISSI, Integrated Silicon Solution Inc |
IC DRAM 1G PARALLEL 60TWBGA
|
pacchetto: 60-TFBGA |
Azione7.504 |
|
DRAM | SDRAM - DDR2 | 1Gb (128M x 8) | Parallel | 333MHz | 15ns | 450ps | 1.7 V ~ 1.9 V | -40°C ~ 85°C (TA) | Surface Mount | 60-TFBGA | 60-TWBGA (8x10.5) |
||
IDT, Integrated Device Technology Inc |
IC SRAM 1M PARALLEL 100TQFP
|
pacchetto: 100-LQFP |
Azione2.944 |
|
SRAM | SRAM - Dual Port, Synchronous | 1Mb (64K x 16) | Parallel | - | - | 9ns | 3 V ~ 3.6 V | -40°C ~ 85°C (TA) | Surface Mount | 100-LQFP | 100-TQFP (14x14) |
||
Micron Technology Inc. |
IC DRAM 4G PARALLEL DIE
|
pacchetto: - |
Azione4.848 |
|
DRAM | SDRAM - DDR3L | 4Gb (256M x 16) | Parallel | - | - | - | 1.283 V ~ 1.45 V | 0°C ~ 95°C (TC) | - | - | - |