Memoria

EDF4432ACPE-GD-F-D

Micron Technology Inc.

LPDDR3 128MX32 PLASTIC GREEN WFB

• Memory Type: -
• Memory Format: -
• Technology: -
• Memory Size: -
• Memory Interface: -
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

pacchetto: -

IS43TR85120AL-15HBL-TR

ISSI, Integrated Silicon Solution Inc

IC SDRAM 4GBIT 667MHZ 78BGA

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM - DDR3L
• Memory Size: 4Gb (512M x 8)
• Memory Interface: Parallel
• Clock Frequency: 667MHz
• Write Cycle Time - Word, Page: 15ns
• Access Time: 20ns
• Voltage - Supply: 1.283 V ~ 1.45 V
• Operating Temperature: 0°C ~ 95°C (TC)
• Mounting Type: Surface Mount
• Package / Case: 78-TFBGA
• Supplier Device Package: 78-TWBGA (9x10.5)

pacchetto: 78-TFBGA

MT48LC64M4A2P-6A:G TR

Micron Technology Inc.

IC SDRAM 256MBIT 167MHZ 54TSOP

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM
• Memory Size: 256Mb (64M x 4)
• Memory Interface: Parallel
• Clock Frequency: 167MHz
• Write Cycle Time - Word, Page: 12ns
• Access Time: 5.4ns
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 54-TSOP (0.400", 10.16mm Width)
• Supplier Device Package: 54-TSOP II

pacchetto: 54-TSOP (0.400", 10.16mm Width)

NAND04GW3C2BN6E

Micron Technology Inc.

IC FLASH 4GBIT 48TSOP

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NAND
• Memory Size: 4Gb (512M x 8)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: 25ns
• Access Time: 25ns
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 48-TFSOP (0.724", 18.40mm Width)
• Supplier Device Package: 48-TSOP

pacchetto: 48-TFSOP (0.724", 18.40mm Width)

IDT709199L7PF8

IDT, Integrated Device Technology Inc

IC SRAM 1.125MBIT 7NS 100TQFP

• Memory Type: Volatile
• Memory Format: SRAM
• Technology: SRAM - Dual Port, Synchronous
• Memory Size: 1.125Mb (128K x 9)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: 7.5ns
• Voltage - Supply: 4.5 V ~ 5.5 V
• Operating Temperature: 0°C ~ 70°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 100-LQFP
• Supplier Device Package: 100-TQFP (14x14)

pacchetto: 100-LQFP

JS28F128J3D75A

Micron Technology Inc.

IC FLASH 128MBIT 75NS 56TSOP

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NOR
• Memory Size: 128Mb (16M x 8, 8M x 16)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: 75ns
• Access Time: 75ns
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 56-TFSOP (0.724", 18.40mm Width)
• Supplier Device Package: 56-TSOP (14x20)

pacchetto: 56-TFSOP (0.724", 18.40mm Width)

IS42S32400B-7TLI-TR

ISSI, Integrated Silicon Solution Inc

IC SDRAM 128MBIT 143MHZ 86TSOP

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM
• Memory Size: 128Mb (4M x 32)
• Memory Interface: Parallel
• Clock Frequency: 143MHz
• Write Cycle Time - Word, Page: -
• Access Time: 5.4ns
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 86-TFSOP (0.400", 10.16mm Width)
• Supplier Device Package: 86-TSOP II

pacchetto: 86-TFSOP (0.400", 10.16mm Width)

AT24C04A-10PC-1.8

Microchip Technology

IC EEPROM 4KBIT 400KHZ 8DIP

• Memory Type: Non-Volatile
• Memory Format: EEPROM
• Technology: EEPROM
• Memory Size: 4Kb (512 x 8)
• Memory Interface: I2C
• Clock Frequency: 400kHz
• Write Cycle Time - Word, Page: 5ms
• Access Time: 900ns
• Voltage - Supply: 1.8 V ~ 5.5 V
• Operating Temperature: 0°C ~ 70°C (TA)
• Mounting Type: Through Hole
• Package / Case: 8-DIP (0.300", 7.62mm)
• Supplier Device Package: 8-PDIP

pacchetto: 8-DIP (0.300", 7.62mm)

AT24C04-10PC-2.7

Microchip Technology

IC EEPROM 4KBIT 400KHZ 8DIP

• Memory Type: Non-Volatile
• Memory Format: EEPROM
• Technology: EEPROM
• Memory Size: 4Kb (512 x 8)
• Memory Interface: I2C
• Clock Frequency: 400kHz
• Write Cycle Time - Word, Page: 5ms
• Access Time: 900ns
• Voltage - Supply: 2.7 V ~ 5.5 V
• Operating Temperature: 0°C ~ 70°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 8-UDFN Exposed Pad
• Supplier Device Package: 8-MAP (3x4.9)

pacchetto: 8-UDFN Exposed Pad

IS64LPS102436B-166B3LA3-TR

ISSI, Integrated Silicon Solution Inc

IC SRAM 36MBIT 166MHZ 165FBGA

• Memory Type: Volatile
• Memory Format: SRAM
• Technology: SRAM - Synchronous
• Memory Size: 36Mb (1M x 36)
• Memory Interface: Parallel
• Clock Frequency: 166MHz
• Write Cycle Time - Word, Page: -
• Access Time: 3.8ns
• Voltage - Supply: 3.135 V ~ 3.465 V
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 165-TBGA
• Supplier Device Package: 165-TFBGA (13x15)

pacchetto: 165-TBGA

MT53B256M64D2PX-062 XT ES:C TR

Micron Technology Inc.

IC SDRAM 16GBIT 1.6GHZ FBGA

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM - Mobile LPDDR4
• Memory Size: 16Gb (256M x 64)
• Memory Interface: -
• Clock Frequency: 1600MHz
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: 1.1V
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

pacchetto: -

71256L55DB

IDT, Integrated Device Technology Inc

IC SRAM 256KBIT 55NS 28CDIP

• Memory Type: Volatile
• Memory Format: SRAM
• Technology: SRAM - Asynchronous
• Memory Size: 256Kb (32K x 8)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: 55ns
• Access Time: 55ns
• Voltage - Supply: 4.5 V ~ 5.5 V
• Operating Temperature: -55°C ~ 125°C (TA)
• Mounting Type: Through Hole
• Package / Case: 28-CDIP (0.600", 15.24mm)
• Supplier Device Package: 28-CerDip

pacchetto: 28-CDIP (0.600", 15.24mm)

AS4C64M16D1-6TCNTR

Alliance Memory, Inc.

IC SDRAM 1GBIT 167MHZ 66TSOP

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM - DDR
• Memory Size: 1Gb (64M x 16)
• Memory Interface: Parallel
• Clock Frequency: 166MHz
• Write Cycle Time - Word, Page: 15ns
• Access Time: 700ps
• Voltage - Supply: 2.3 V ~ 2.7 V
• Operating Temperature: 0°C ~ 70°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 66-TSSOP (0.400", 10.16mm Width)
• Supplier Device Package: 66-TSOP II

pacchetto: 66-TSSOP (0.400", 10.16mm Width)

MT29F64G08CBCABH1-12Z:A

Micron Technology Inc.

IC FLASH 64GBIT 83MHZ 100VBGA

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NAND
• Memory Size: 64Gb (8G x 8)
• Memory Interface: Parallel
• Clock Frequency: 83MHz
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 100-VBGA
• Supplier Device Package: 100-VBGA (12x18)

pacchetto: 100-VBGA

S25FL132K0XMFIQ11

Cypress Semiconductor Corp

IC FLASH 32MBIT 108MHZ 8SOIC

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NOR
• Memory Size: 32Mb (4M x 8)
• Memory Interface: SPI - Quad I/O
• Clock Frequency: 108MHz
• Write Cycle Time - Word, Page: 3ms
• Access Time: -
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.209", 5.30mm Width)
• Supplier Device Package: 8-SO

pacchetto: 8-SOIC (0.209", 5.30mm Width)

93AA56B-I/MS

Microchip Technology

IC EEPROM 2KBIT 2MHZ 8MSOP

• Memory Type: Non-Volatile
• Memory Format: EEPROM
• Technology: EEPROM
• Memory Size: 2Kb (128 x 16)
• Memory Interface: SPI
• Clock Frequency: 2MHz
• Write Cycle Time - Word, Page: 6ms
• Access Time: -
• Voltage - Supply: 1.8 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
• Supplier Device Package: 8-MSOP

pacchetto: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

CY7C1380DV33-200BZI

Cypress Semiconductor Corp

IC SRAM 18MBIT 200MHZ 165FBGA

• Memory Type: Volatile
• Memory Format: SRAM
• Technology: SRAM - Synchronous
• Memory Size: 18Mb (512K x 36)
• Memory Interface: Parallel
• Clock Frequency: 200MHz
• Write Cycle Time - Word, Page: -
• Access Time: 3ns
• Voltage - Supply: 3.135 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 165-LBGA
• Supplier Device Package: 165-FBGA (13x15)

pacchetto: 165-LBGA

25LC080A-I/SN

Microchip Technology

IC EEPROM 8KBIT 10MHZ 8SOIC

• Memory Type: Non-Volatile
• Memory Format: EEPROM
• Technology: EEPROM
• Memory Size: 8Kb (1K x 8)
• Memory Interface: SPI
• Clock Frequency: 10MHz
• Write Cycle Time - Word, Page: 5ms
• Access Time: -
• Voltage - Supply: 2.5 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SOIC

pacchetto: 8-SOIC (0.154", 3.90mm Width)

AS6C1016-55ZIN

Alliance Memory, Inc.

IC SRAM 1MBIT 55NS 44TSOP

• Memory Type: Volatile
• Memory Format: SRAM
• Technology: SRAM - Asynchronous
• Memory Size: 1Mb (64K x 16)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: 55ns
• Access Time: 55ns
• Voltage - Supply: 2.7 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 44-TSOP (0.400", 10.16mm Width)
• Supplier Device Package: 44-TSOP II

pacchetto: 44-TSOP (0.400", 10.16mm Width)

MT29F1G08ABADAH4-IT:D

Micron Technology Inc.

IC FLASH 1GBIT 20NS 63VFBGA

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NAND
• Memory Size: 1Gb (128M x 8)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 63-VFBGA
• Supplier Device Package: 63-VFBGA (9x11)

pacchetto: 63-VFBGA

DS2431Q+T&R

Maxim Integrated

IC EEPROM 1KBIT 1WIRE 6TDFN

• Memory Type: Non-Volatile
• Memory Format: EEPROM
• Technology: EEPROM
• Memory Size: 1Kb (256 x 4)
• Memory Interface: 1-Wire?
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: 2µs
• Voltage - Supply: -
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 6-WDFN Exposed Pad
• Supplier Device Package: 6-TDFN-EP (3x3)

pacchetto: 6-WDFN Exposed Pad

25LC080A-I/W15K

Microchip Technology

IC EEPROM 8K SPI 10MHZ WAFER

• Memory Type: Non-Volatile
• Memory Format: EEPROM
• Technology: EEPROM
• Memory Size: 8Kb (1K x 8)
• Memory Interface: SPI
• Clock Frequency: 10MHz
• Write Cycle Time - Word, Page: 5ms
• Access Time: -
• Voltage - Supply: 2.5 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: Die
• Supplier Device Package: Die

pacchetto: Die

S29GL512T11TFIV30

Cypress Semiconductor Corp

IC 512 MB FLASH MEMORY

• Memory Type: -
• Memory Format: -
• Technology: -
• Memory Size: -
• Memory Interface: -
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

pacchetto: -

S25FL032P0XNFA013

Cypress Semiconductor Corp

IC 32 MB FLASH MEMORY

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NOR
• Memory Size: 32Mb (4M x 8)
• Memory Interface: SPI - Quad I/O
• Clock Frequency: 104MHz
• Write Cycle Time - Word, Page: 5µs, 3ms
• Access Time: -
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 8-WDFN Exposed Pad
• Supplier Device Package: 8-WSON (6x8)

pacchetto: 8-WDFN Exposed Pad

AS4C32M8SA-7TCN

Alliance Memory, Inc.

IC DRAM 256M PARALLEL 54TSOP

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM
• Memory Size: 256Mb (32M x 8)
• Memory Interface: Parallel
• Clock Frequency: 143MHz
• Write Cycle Time - Word, Page: -
• Access Time: 5.5ns
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 54-TSOP (0.400", 10.16mm Width)
• Supplier Device Package: 54-TSOP II

pacchetto: 54-TSOP (0.400", 10.16mm Width)

S34ML02G200TFI003

Cypress Semiconductor Corp

IC FLASH 2G PARALLEL 48TSOP I

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NAND
• Memory Size: 2Gb (256M x 8)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: 25ns
• Access Time: -
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 48-TFSOP (0.724", 18.40mm Width)
• Supplier Device Package: 48-TSOP I

pacchetto: 48-TFSOP (0.724", 18.40mm Width)

S29PL127J60TAI130

Cypress Semiconductor Corp

IC FLASH MEM NOR 56PIN

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NOR
• Memory Size: 128M (8M x 16)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: 60ns
• Access Time: 60ns
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 56-TFSOP (0.724", 18.40mm Width)
• Supplier Device Package: 56-TSOP

pacchetto: 56-TFSOP (0.724", 18.40mm Width)

MT29F4G16ABAFAH4-AATES:F TR

Micron Technology Inc.

IC FLASH 4G PARALLEL FBGA

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NAND
• Memory Size: 4Gb (256M x 16)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 105°C (TC)
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

pacchetto: -

MT29F4G01ABBFD12-AATES:F TR

Micron Technology Inc.

IC FLASH 4G SPI TBGA

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NAND
• Memory Size: 4Gb (4G x 1)
• Memory Interface: SPI
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: -40°C ~ 105°C (TC)
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

pacchetto: -

MT41K128M16JT-107 AAT:K TR

Micron Technology Inc.

IC SDRAM DDR3L 2GB 96FBGA

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM - DDR3L
• Memory Size: 2Gb (128M x 16)
• Memory Interface: Parallel
• Clock Frequency: 933MHz
• Write Cycle Time - Word, Page: 15ns
• Access Time: 20ns
• Voltage - Supply: 1.283V ~ 1.45V
• Operating Temperature: -40°C ~ 105°C (TC)
• Mounting Type: Surface Mount
• Package / Case: 96-TFBGA
• Supplier Device Package: 96-FBGA (8x14)

pacchetto: 96-TFBGA