Immagine |
Numero di parte |
Produttore |
Descrizione |
pacchetto |
Azione |
Quantità |
Channel Type | Number of Drivers | Gate Type | Voltage - Supply | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | Input Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
IC DRIVER HIGH SIDE 600V 8-SOIC
|
pacchetto: 8-SOIC (0.154", 3.90mm Width) |
Azione32.352 |
|
Single | 1 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | 0.8V, 2.5V | 4A, 4A | Non-Inverting | 600V | 15ns, 15ns | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
||
Infineon Technologies |
IC DRIVER HIGH/LOW SIDE 14-DIP
|
pacchetto: 14-DIP (0.300", 7.62mm) |
Azione17.472 |
|
Independent | 2 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | 0.8V, 2.7V | 1.9A, 2.3A | Non-Inverting | 600V | 40ns, 20ns | -40°C ~ 150°C (TJ) | Through Hole | 14-DIP (0.300", 7.62mm) | 14-DIP |
||
Texas Instruments |
IC DRVR HALF BRDG 100V 2A 8-SOIC
|
pacchetto: 8-SOIC (0.154", 3.90mm Width) |
Azione191.580 |
|
Independent | 2 | N-Channel MOSFET | 9 V ~ 14 V | 2.3V, - | 2A, 2A | Non-Inverting | 118V | 570ns, 430ns | -40°C ~ 125°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
||
Fairchild/ON Semiconductor |
IC GATE DVR MONO HI/LO 14DIP
|
pacchetto: 14-DIP (0.300", 7.62mm) |
Azione6.576 |
|
Independent | 2 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | 4.5V, 9.5V | 3A, 3A | Non-Inverting | 600V | 25ns, 20ns | -40°C ~ 150°C (TJ) | Through Hole | 14-DIP (0.300", 7.62mm) | 14-PDIP |
||
Intersil |
IC DRVR DUAL SYNC BUCK 14-SOIC
|
pacchetto: 14-SOIC (0.154", 3.90mm Width) |
Azione6.256 |
|
Synchronous | 4 | N-Channel MOSFET | 7 V ~ 13.2 V | - | 1.25A, 2A | Non-Inverting | 36V | 26ns, 18ns | -40°C ~ 125°C (TJ) | Surface Mount | 14-SOIC (0.154", 3.90mm Width) | 14-SOIC |
||
NXP |
IC PRE-DRIVER FULL BRIDGE 20SOIC
|
pacchetto: 20-SOIC (0.295", 7.50mm Width) |
Azione95.100 |
|
Independent | 4 | N-Channel MOSFET | 5.5 V ~ 55 V | 0.8V, 2V | 1A, 1A | Non-Inverting | - | - | -40°C ~ 150°C (TJ) | Surface Mount | 20-SOIC (0.295", 7.50mm Width) | 20-SOIC |
||
IXYS |
IC DRIVER MOSF/IGBT 14A14SOIC
|
pacchetto: 14-SOIC (0.154", 3.90mm Width) |
Azione2.176 |
|
Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 4.5 V ~ 35 V | 0.8V, 3.5V | 14A, 14A | Non-Inverting | - | 22ns, 20ns | -55°C ~ 150°C (TJ) | Surface Mount | 14-SOIC (0.154", 3.90mm Width) | 14-SOIC |
||
Microchip Technology |
IC DRIVER MOSFET HISIDE HS 8SOIC
|
pacchetto: 8-SOIC (0.154", 3.90mm Width) |
Azione4.960 |
|
Single | 1 | IGBT, N-Channel MOSFET | 12 V ~ 36 V | 0.8V, 2V | - | Non-Inverting | - | 400ns, 400ns | -40°C ~ 85°C (TA) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
||
Intersil |
IC DRIVER MOSF DUAL SYNC 16QFN
|
pacchetto: 16-VQFN Exposed Pad |
Azione54.816 |
|
Synchronous | 4 | N-Channel MOSFET | 10.8 V ~ 13.2 V | - | 1.25A, 2A | Non-Inverting | 36V | 26ns, 18ns | 0°C ~ 125°C (TJ) | Surface Mount | 16-VQFN Exposed Pad | 16-QFN (4x4) |
||
Infineon Technologies |
IC MOSFET DRIVER CUR-SENSE 8SOIC
|
pacchetto: 8-SOIC (0.154", 3.90mm Width) |
Azione14.856 |
|
Single | 1 | IGBT, N-Channel MOSFET | 12 V ~ 20 V | 0.8V, 3V | 250mA, 500mA | Inverting | 600V | 80ns, 40ns | -40°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
||
Infineon Technologies |
IC DRIVER HIGH/LOW SIDE 8SOIC
|
pacchetto: 8-SOIC (0.154", 3.90mm Width) |
Azione6.992 |
|
Independent | 2 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | 0.8V, 2.5V | 1.9A, 2.3A | Inverting | 600V | 15ns, 15ns | -40°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
||
Infineon Technologies |
IC DUAL MOSFET IGBT 8SO
|
pacchetto: 8-SOIC (0.154", 3.90mm Width) |
Azione29.340 |
|
Independent | 2 | IGBT, N-Channel MOSFET | 6 V ~ 20 V | 0.8V, 2.7V | 2.3A, 3.3A | Non-Inverting | - | 15ns, 10ns | -40°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
||
Linear Technology |
IC GATE DRVR N-CH MOSFET 10MSOP
|
pacchetto: - |
Azione3.856 |
|
Single | 1 | N-Channel MOSFET | 3.5 V ~ 15 V | - | - | Non-Inverting | - | 90ns, 40ns | -40°C ~ 125°C (TJ) | - | - | - |
||
Microchip Technology |
IC MOSFET DVR 12A HS 8DFN
|
pacchetto: 8-VDFN Exposed Pad |
Azione7.664 |
|
Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2.4V | 13A, 13A | Non-Inverting | - | 30ns, 32ns | -40°C ~ 150°C (TJ) | Surface Mount | 8-VDFN Exposed Pad | 8-DFN-S (6x5) |
||
Texas Instruments |
IC 3PHASE GATE DRIVER 32WQFN
|
pacchetto: - |
Azione5.328 |
|
3-Phase | 6 | N-Channel MOSFET | 6 V ~ 60 V | 0.8V, 1.5V | 1A, 2A | - | - | - | -40°C ~ 150°C (TJ) | - | - | - |
||
Microchip Technology |
IC MOSFET DVR 3A DUAL HS 8DFN
|
pacchetto: 8-VDFN Exposed Pad |
Azione4.096 |
|
Independent | 2 | N-Channel, P-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2.4V | 3A, 3A | Inverting, Non-Inverting | - | 23ns, 25ns | -40°C ~ 150°C (TJ) | Surface Mount | 8-VDFN Exposed Pad | 8-DFN-S (6x5) |
||
Fairchild/ON Semiconductor |
IC GATE DVR LOW DUAL 4A HS 8MLP
|
pacchetto: 8-WDFN Exposed Pad |
Azione10.140 |
|
Independent | 2 | N-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2V | 5A, 5A | Inverting | - | 12ns, 9ns | -55°C ~ 150°C (TJ) | Surface Mount | 8-WDFN Exposed Pad | 8-MLP (3x3) |
||
Infineon Technologies |
IC DVR CURRENT SENSE 1CH 8SOIC
|
pacchetto: 8-SOIC (0.154", 3.90mm Width) |
Azione19.260 |
|
Single | 1 | IGBT, N-Channel MOSFET | 12 V ~ 20 V | 0.8V, 2.5V | 290mA, 600mA | Non-Inverting | 600V | 80ns, 40ns | -40°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
||
Maxim Integrated |
IC DRIVER MOSFET 8-SOIC
|
pacchetto: 8-SOIC (0.154", 3.90mm Width) |
Azione8.316 |
|
Independent | 2 | N-Channel MOSFET | 8 V ~ 12.6 V | 0.8V, 2V | 2A, 2A | Inverting, Non-Inverting | 175V | 65ns, 65ns | -40°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
||
Texas Instruments |
IC DUAL PERIPHERAL DRVR 8-SOIC
|
pacchetto: 8-SOIC (0.154", 3.90mm Width) |
Azione651.468 |
|
Independent | 2 | N-Channel, P-Channel MOSFET | 4.75 V ~ 5.25 V | 0.8V, 2V | 500mA, 500mA | Inverting | - | 5ns, 7ns | 0°C ~ 70°C (TA) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
||
Intersil |
IC DRIVER 3PHASE 80V 0.5A 24SOIC
|
pacchetto: 24-SOIC (0.295", 7.50mm Width) |
Azione200.472 |
|
3-Phase | 6 | N-Channel MOSFET | 7 V ~ 15 V | 1V, 2.5V | 500mA, 500mA | Inverting, Non-Inverting | 95V | 20ns, 10ns | -40°C ~ 150°C (TJ) | Surface Mount | 24-SOIC (0.295", 7.50mm Width) | 24-SOIC |
||
Microchip Technology |
IC MOSFET DVR 9A NON-INV TO220-5
|
pacchetto: TO-220-5 |
Azione18.432 |
|
Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2.4V | 10A, 10A | Non-Inverting | - | 38ns, 33ns | -40°C ~ 150°C (TJ) | Through Hole | TO-220-5 | TO-220-5 |
||
Fairchild/ON Semiconductor |
IC HALF BRIDGE GATE DRIVER 8-SOP
|
pacchetto: 8-SOIC (0.154", 3.90mm Width) |
Azione27.876 |
|
Independent | 2 | IGBT, N-Channel MOSFET | 11 V ~ 20 V | 1.2V, 2.5V | 350mA, 650mA | Non-Inverting | 600V | 50ns, 30ns | -40°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOP |
||
Renesas Electronics America |
IC DRVR MOSFET DUAL-CH 8-SOIC
|
pacchetto: 8-SOIC (0.154", 3.90mm Width) |
Azione5.040 |
|
Independent | 2 | N-Channel, P-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2.4V | 2A, 2A | Non-Inverting | - | 7.5ns, 10ns | -40°C ~ 125°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
||
Renesas Electronics America |
MOSFET DRIVER 2CH 3.3V 6A 8TDFN
|
pacchetto: 8-WDFN Exposed Pad |
Azione23.928 |
|
Independent | 2 | N-Channel MOSFET | 4.5 V ~ 16 V | 1.22V, 2.08V | 6A, 6A | Non-Inverting | - | 20ns, 20ns | -40°C ~ 125°C (TJ) | Surface Mount | 8-WDFN Exposed Pad | 8-TDFN (3x3) |
||
Renesas Electronics America |
IC DRVR MOSFET DUAL-CH 8-SOIC
|
pacchetto: 8-SOIC (0.154", 3.90mm Width) |
Azione96.900 |
|
Independent | 2 | N-Channel, P-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2.4V | 2A, 2A | Non-Inverting | - | 7.5ns, 10ns | -40°C ~ 125°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
||
Renesas Electronics America |
IC HALF BRIDGE FET DRIVER 9TDFN
|
pacchetto: 9-WDFN Exposed Pad |
Azione7.280 |
|
Synchronous | 2 | N-Channel MOSFET | 8 V ~ 14 V | 1.4V, 2.2V | 2A, 2A | Inverting | 114V | 10ns, 10ns | -55°C ~ 150°C (TJ) | Surface Mount | 9-WDFN Exposed Pad | 9-TDFN (4x4) |
||
Renesas Electronics America |
IC MOSFET DRIVER 2CH 6A 8SOIC
|
pacchetto: 8-SOIC (0.154", 3.90mm Width) Exposed Pad |
Azione7.056 |
|
Independent | 2 | N-Channel MOSFET | 4.5 V ~ 16 V | 1.22V, 2.08V | 6A, 6A | Inverting | - | 20ns, 20ns | -40°C ~ 125°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) Exposed Pad | 8-SOIC-EP |
||
ON Semiconductor |
IC GATE DVR LOW DUAL 2A HS 8SOIC
|
pacchetto: 8-SOIC (0.154", 3.90mm Width) |
Azione4.272 |
|
Independent | 2 | N-Channel MOSFET | 4.5 V ~ 18 V | - | 3A, 3A | Inverting, Non-Inverting | - | 12ns, 9ns | -40°C ~ 125°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
||
Microchip Technology |
12.0A SINGLE NON-INV MOSFET DRIV
|
pacchetto: 8-SOIC (0.154", 3.90mm Width) |
Azione19.932 |
|
Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 4.5V ~ 18V | 0.8V, 2V | 12A, 12A | Non-Inverting | - | 25ns, 25ns | -40°C ~ 125°C (TA) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |