Pagina 4 - Prodotti Microsemi Corporation - Transistor - Bipolari (BJT) - RF

Numero di parte	Produttore	Descrizione	pacchetto	Azione	Voltage - Collector Emitter Breakdown (Max)	Frequency - Transition	Noise Figure (dB Typ @ f)	Gain	Power - Max	DC Current Gain (hFE) (Min) @ Ic, Vce	Current - Collector (Ic) (Max)	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
10502	Microsemi Corporation	TRANS BIPO 50V 500W 55SM Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 65V Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: 8.5dB Power - Max: 1458W DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5A, 5V Current - Collector (Ic) (Max): 40A Operating Temperature: 230°C (TJ) Mounting Type: Chassis Mount Package / Case: 55SM Supplier Device Package: 55SM	pacchetto: 55SM	Azione2.800	65V	-	-	8.5dB	1458W	20 @ 5A, 5V	40A	230°C (TJ)	Chassis Mount	55SM	55SM
1214-370M	Microsemi Corporation	TRANS RF BIPO 600W 25A 55ST1 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 75V Frequency - Transition: 1.2GHz ~ 1.4GHz Noise Figure (dB Typ @ f): - Gain: 8.7dB ~ 9dB Power - Max: 600W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 5A, 5V Current - Collector (Ic) (Max): 25A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 55ST Supplier Device Package: 55ST	pacchetto: 55ST	Azione3.424	75V	1.2GHz ~ 1.4GHz	-	8.7dB ~ 9dB	600W	10 @ 5A, 5V	25A	200°C (TJ)	Chassis Mount	55ST	55ST
1214-110M	Microsemi Corporation	TRANS RF BIPO 270W 8A 55KT1 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 75V Frequency - Transition: 1.2GHz ~ 1.4GHz Noise Figure (dB Typ @ f): - Gain: 7.4dB Power - Max: 270W DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): 8A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 55KT Supplier Device Package: 55KT	pacchetto: 55KT	Azione6.144	75V	1.2GHz ~ 1.4GHz	-	7.4dB	270W	-	8A	200°C (TJ)	Chassis Mount	55KT	55KT
0510-50A	Microsemi Corporation	TRANS RF BIPO 50W 1000MHZ 55AV2 Transistor Type: - Voltage - Collector Emitter Breakdown (Max): 27V Frequency - Transition: 500MHz ~ 1GHz Noise Figure (dB Typ @ f): - Gain: 7dB Power - Max: 50W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 500mA, 5V Current - Collector (Ic) (Max): 3.7A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 55AV Supplier Device Package: 55AV	pacchetto: 55AV	Azione2.464	27V	500MHz ~ 1GHz	-	7dB	50W	10 @ 500mA, 5V	3.7A	200°C (TJ)	Chassis Mount	55AV	55AV
MS2200	Microsemi Corporation	TRANS RF BIPO 1167W 43.2A MS102 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 65V Frequency - Transition: 400MHz ~ 500MHz Noise Figure (dB Typ @ f): - Gain: 9.7dB Power - Max: 1167W DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5A, 5V Current - Collector (Ic) (Max): 43.2A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: M102 Supplier Device Package: M102	pacchetto: M102	Azione7.408	65V	400MHz ~ 500MHz	-	9.7dB	1167W	20 @ 5A, 5V	43.2A	200°C (TJ)	Chassis Mount	M102	M102
1214-150L	Microsemi Corporation	TRANS BIPO 55ST-1 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 65V Frequency - Transition: 1.2GHz ~ 1.4GHz Noise Figure (dB Typ @ f): - Gain: 7.15dB ~ 8.7dB Power - Max: 320W DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 5V Current - Collector (Ic) (Max): 15A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 55ST-1 Supplier Device Package: 55ST-1	pacchetto: 55ST-1	Azione6.992	65V	1.2GHz ~ 1.4GHz	-	7.15dB ~ 8.7dB	320W	20 @ 1A, 5V	15A	200°C (TJ)	Chassis Mount	55ST-1	55ST-1
1517-110M	Microsemi Corporation	TRANS RF BIPO 350W 9A 55AW1 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 70V Frequency - Transition: 1.48GHz ~ 1.65GHz Noise Figure (dB Typ @ f): - Gain: 7.3dB ~ 8.6dB Power - Max: 350W DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 5V Current - Collector (Ic) (Max): 9A Operating Temperature: - Mounting Type: Chassis Mount Package / Case: 55AW-1 Supplier Device Package: 55AW-1	pacchetto: 55AW-1	Azione7.568	70V	1.48GHz ~ 1.65GHz	-	7.3dB ~ 8.6dB	350W	20 @ 1A, 5V	9A	-	Chassis Mount	55AW-1	55AW-1
UTV8100B	Microsemi Corporation	TRANS RF BIPO 290W 15A 55RT2 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 60V Frequency - Transition: 470MHz ~ 860MHz Noise Figure (dB Typ @ f): - Gain: 8.5dB ~ 9.5dB Power - Max: 290W DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 5V Current - Collector (Ic) (Max): 15A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 55RT Supplier Device Package: 55RT	pacchetto: 55RT	Azione3.424	60V	470MHz ~ 860MHz	-	8.5dB ~ 9.5dB	290W	20 @ 1A, 5V	15A	200°C (TJ)	Chassis Mount	55RT	55RT
1214-300	Microsemi Corporation	TRANS RF BIPO 88W 4A 55KT Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 50V Frequency - Transition: 1.2GHz ~ 1.4GHz Noise Figure (dB Typ @ f): - Gain: 7dB Power - Max: 88W DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 500mA, 5V Current - Collector (Ic) (Max): 4A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 55KT Supplier Device Package: 55KT	pacchetto: 55KT	Azione4.368	50V	1.2GHz ~ 1.4GHz	-	7dB	88W	20 @ 500mA, 5V	4A	200°C (TJ)	Chassis Mount	55KT	55KT
1214-300M	Microsemi Corporation	TRANS RF BIPO 88W 4A 55ST1 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 50V Frequency - Transition: 1.2GHz ~ 1.4GHz Noise Figure (dB Typ @ f): - Gain: 7dB Power - Max: 88W DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 500mA, 5V Current - Collector (Ic) (Max): 4A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 55ST Supplier Device Package: 55ST	pacchetto: 55ST	Azione6.656	50V	1.2GHz ~ 1.4GHz	-	7dB	88W	20 @ 500mA, 5V	4A	200°C (TJ)	Chassis Mount	55ST	55ST
2731-100M	Microsemi Corporation	TRANS RF BIPO 575W 15A 55KS1 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 65V Frequency - Transition: 2.7GHz ~ 3.1GHz Noise Figure (dB Typ @ f): - Gain: 8db ~ 9.4dB Power - Max: 575W DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 600mA, 5V Current - Collector (Ic) (Max): 15A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 55KS-1 Supplier Device Package: 55KS-1	pacchetto: 55KS-1	Azione3.248	65V	2.7GHz ~ 3.1GHz	-	8db ~ 9.4dB	575W	15 @ 600mA, 5V	15A	200°C (TJ)	Chassis Mount	55KS-1	55KS-1
TPR700	Microsemi Corporation	TRANS RF BIPO 2050W 55A 55KT1 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 65V Frequency - Transition: 1.03GHz ~ 1.09GHz Noise Figure (dB Typ @ f): - Gain: 6.7dB Power - Max: 2050W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 1A, 5V Current - Collector (Ic) (Max): 55A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 55KT Supplier Device Package: 55KT	pacchetto: 55KT	Azione6.720	65V	1.03GHz ~ 1.09GHz	-	6.7dB	2050W	10 @ 1A, 5V	55A	200°C (TJ)	Chassis Mount	55KT	55KT
2729-170	Microsemi Corporation	TRANS RF BIPO 570W 17A 55KS1 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 65V Frequency - Transition: 2.7GHz ~ 2.9GHz Noise Figure (dB Typ @ f): - Gain: 8.2dB ~ 8.6dB Power - Max: 570W DC Current Gain (hFE) (Min) @ Ic, Vce: 18 @ 60mA, 5V Current - Collector (Ic) (Max): 17A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 55KS-1 Supplier Device Package: 55KS-1	pacchetto: 55KS-1	Azione2.016	65V	2.7GHz ~ 2.9GHz	-	8.2dB ~ 8.6dB	570W	18 @ 60mA, 5V	17A	200°C (TJ)	Chassis Mount	55KS-1	55KS-1
0910-150M	Microsemi Corporation	TRAN RF BIPO 400W 1000MHZ 55KT1 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 65V Frequency - Transition: 890MHz ~ 1GHz Noise Figure (dB Typ @ f): - Gain: 8.1dB ~ 8.5dB Power - Max: 400W DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): 12A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 55KT Supplier Device Package: 55KT	pacchetto: 55KT	Azione2.592	65V	890MHz ~ 1GHz	-	8.1dB ~ 8.5dB	400W	-	12A	200°C (TJ)	Chassis Mount	55KT	55KT
1214-220M	Microsemi Corporation	TRANS RF BIPO 700W 20A 55ST1 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 70V Frequency - Transition: 1.2GHz ~ 1.4GHz Noise Figure (dB Typ @ f): - Gain: 7.4dB Power - Max: 700W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 1A, 5V Current - Collector (Ic) (Max): 20A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 55ST Supplier Device Package: 55ST	pacchetto: 55ST	Azione6.864	70V	1.2GHz ~ 1.4GHz	-	7.4dB	700W	10 @ 1A, 5V	20A	200°C (TJ)	Chassis Mount	55ST	55ST
0910-60M	Microsemi Corporation	TRAN RF BIPO 180W 1000MHZ 55AW Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 65V Frequency - Transition: 890MHz ~ 1GHz Noise Figure (dB Typ @ f): - Gain: 8dB ~ 8.5dB Power - Max: 180W DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): 8A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 55AW Supplier Device Package: 55AW	pacchetto: 55AW	Azione2.656	65V	890MHz ~ 1GHz	-	8dB ~ 8.5dB	180W	-	8A	200°C (TJ)	Chassis Mount	55AW	55AW
2729-125	Microsemi Corporation	TRANS RF BIPO 350W 15A 55KS1 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 65V Frequency - Transition: 2.7GHz ~ 2.9GHz Noise Figure (dB Typ @ f): - Gain: 9dB ~ 9.5dB Power - Max: 350W DC Current Gain (hFE) (Min) @ Ic, Vce: 18 @ 600mA, 5V Current - Collector (Ic) (Max): 15A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 55KS-1 Supplier Device Package: 55KS-1	pacchetto: 55KS-1	Azione5.008	65V	2.7GHz ~ 2.9GHz	-	9dB ~ 9.5dB	350W	18 @ 600mA, 5V	15A	200°C (TJ)	Chassis Mount	55KS-1	55KS-1
MDS400	Microsemi Corporation	TRANS RF BIPO 1450W 40A 55KT1 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 55V Frequency - Transition: 1.03GHz ~ 1.09GHz Noise Figure (dB Typ @ f): - Gain: 6.5dB Power - Max: 1450W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 1A, 5V Current - Collector (Ic) (Max): 40A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 55KT Supplier Device Package: 55KT	pacchetto: 55KT	Azione6.224	55V	1.03GHz ~ 1.09GHz	-	6.5dB	1450W	10 @ 1A, 5V	40A	200°C (TJ)	Chassis Mount	55KT	55KT
MS2267	Microsemi Corporation	TRANS RF BIPO 575W 20A M214 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 60V Frequency - Transition: 960MHz ~ 1.215GHz Noise Figure (dB Typ @ f): - Gain: 8dB ~ 8.7dB Power - Max: 575W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 1A, 5V Current - Collector (Ic) (Max): 20A Operating Temperature: 250°C (TJ) Mounting Type: Chassis Mount Package / Case: M214 Supplier Device Package: M214	pacchetto: M214	Azione4.592	60V	960MHz ~ 1.215GHz	-	8dB ~ 8.7dB	575W	10 @ 1A, 5V	20A	250°C (TJ)	Chassis Mount	M214	M214
TAN300	Microsemi Corporation	TRANS RF BIPO 65V 20A 55KT1 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 65V Frequency - Transition: 960MHz ~ 1.215GHz Noise Figure (dB Typ @ f): - Gain: 6.6dB Power - Max: 1166W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 1mA, 5V Current - Collector (Ic) (Max): 20A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 55KT Supplier Device Package: 55KT	pacchetto: 55KT	Azione3.744	65V	960MHz ~ 1.215GHz	-	6.6dB	1166W	10 @ 1mA, 5V	20A	200°C (TJ)	Chassis Mount	55KT	55KT
UMIL100A	Microsemi Corporation	TRANS RF BIPO 270W 20A 55JU2 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 31V Frequency - Transition: 225MHz ~ 400MHz Noise Figure (dB Typ @ f): - Gain: 7.2dB ~ 8.5dB Power - Max: 270W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 1A, 5V Current - Collector (Ic) (Max): 20A Operating Temperature: 150°C (TJ) Mounting Type: Chassis Mount Package / Case: 55JU Supplier Device Package: 55JU	pacchetto: 55JU	Azione2.752	31V	225MHz ~ 400MHz	-	7.2dB ~ 8.5dB	270W	10 @ 1A, 5V	20A	150°C (TJ)	Chassis Mount	55JU	55JU
JTDB25	Microsemi Corporation	TRANSISTOR BIPO 55AW-1 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 55V Frequency - Transition: 960MHz ~ 1.215GHz Noise Figure (dB Typ @ f): - Gain: 7.5dB Power - Max: 97W DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 500mA, 5V Current - Collector (Ic) (Max): 5A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 55AW-1 Supplier Device Package: 55AW-1	pacchetto: 55AW-1	Azione4.304	55V	960MHz ~ 1.215GHz	-	7.5dB	97W	20 @ 500mA, 5V	5A	200°C (TJ)	Chassis Mount	55AW-1	55AW-1
DME400A	Microsemi Corporation	TRANSISTOR BIPO 55AW-1 Transistor Type: - Voltage - Collector Emitter Breakdown (Max): - Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: - Power - Max: - DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	pacchetto: -	Azione3.344	-	-	-	-	-	-	-	-	-	-	-
0204-125	Microsemi Corporation	TRANS RF BIPO 125W 500MHZ 55JT2 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 60V Frequency - Transition: 225MHz ~ 400MHz Noise Figure (dB Typ @ f): - Gain: 7dB ~ 8.5dB Power - Max: 270W DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 5V Current - Collector (Ic) (Max): 16A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 55JT Supplier Device Package: 55JT	pacchetto: 55JT	Azione4.816	60V	225MHz ~ 400MHz	-	7dB ~ 8.5dB	270W	20 @ 1A, 5V	16A	200°C (TJ)	Chassis Mount	55JT	55JT
MSC1450M	Microsemi Corporation	TRANS RF BIPO 910W 28A M216 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 65V Frequency - Transition: 1.09GHz Noise Figure (dB Typ @ f): - Gain: 7dB Power - Max: 910W DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 1A, 5V Current - Collector (Ic) (Max): 28A Operating Temperature: 250°C (TJ) Mounting Type: Chassis Mount Package / Case: M216 Supplier Device Package: M216	pacchetto: M216	Azione5.504	65V	1.09GHz	-	7dB	910W	15 @ 1A, 5V	28A	250°C (TJ)	Chassis Mount	M216	M216
MS2473	Microsemi Corporation	TRANS RF BIPO 2300W 46A M112 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 65V Frequency - Transition: 1.09GHz Noise Figure (dB Typ @ f): - Gain: 6dB Power - Max: 2300W DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 1A, 5V Current - Collector (Ic) (Max): 46A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: M112 Supplier Device Package: M112	pacchetto: M112	Azione6.384	65V	1.09GHz	-	6dB	2300W	5 @ 1A, 5V	46A	200°C (TJ)	Chassis Mount	M112	M112
1214-55	Microsemi Corporation	TRANS BIPO 55AW-1 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 50V Frequency - Transition: 1.2GHz ~ 1.4GHz Noise Figure (dB Typ @ f): - Gain: 7dB Power - Max: 175W DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 5V Current - Collector (Ic) (Max): 8A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 55AW Supplier Device Package: 55AW	pacchetto: 55AW	Azione3.136	50V	1.2GHz ~ 1.4GHz	-	7dB	175W	20 @ 1A, 5V	8A	200°C (TJ)	Chassis Mount	55AW	55AW
MS2421	Microsemi Corporation	TRANS RF BIPO 875W 22A M103 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 65V Frequency - Transition: 1.025GHz ~ 1.15GHz Noise Figure (dB Typ @ f): - Gain: 6.3dB Power - Max: 875W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 500mA, 5V Current - Collector (Ic) (Max): 22A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: M103 Supplier Device Package: M103	pacchetto: M103	Azione7.232	65V	1.025GHz ~ 1.15GHz	-	6.3dB	875W	10 @ 500mA, 5V	22A	200°C (TJ)	Chassis Mount	M103	M103
TAN250A	Microsemi Corporation	TRANS RF BIPO 60V 30A 55AW1 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 60V Frequency - Transition: 960MHz ~ 1.215GHz Noise Figure (dB Typ @ f): - Gain: 6.2db ~ 7dB Power - Max: 575W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 1A, 5V Current - Collector (Ic) (Max): 30A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 55AW Supplier Device Package: 55AW	pacchetto: 55AW	Azione4.208	60V	960MHz ~ 1.215GHz	-	6.2db ~ 7dB	575W	10 @ 1A, 5V	30A	200°C (TJ)	Chassis Mount	55AW	55AW
1214-32L	Microsemi Corporation	TRANS RF BIPO 125W 5A 55AW1 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 50V Frequency - Transition: 1.2GHz ~ 1.4GHz Noise Figure (dB Typ @ f): - Gain: 7.8dB ~ 8.9dB Power - Max: 125W DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 5V Current - Collector (Ic) (Max): 5A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 55AW-1 Supplier Device Package: 55AW-1	pacchetto: 55AW-1	Azione6.304	50V	1.2GHz ~ 1.4GHz	-	7.8dB ~ 8.9dB	125W	20 @ 1A, 5V	5A	200°C (TJ)	Chassis Mount	55AW-1	55AW-1

10502

Microsemi Corporation

TRANS BIPO 50V 500W 55SM

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 65V
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: 8.5dB
Power - Max: 1458W
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5A, 5V
Current - Collector (Ic) (Max): 40A
Operating Temperature: 230°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 55SM
Supplier Device Package: 55SM

pacchetto: 55SM

Azione2.800

65V

-

8.5dB

1458W

20 @ 5A, 5V

40A

230°C (TJ)

Chassis Mount

55SM

1214-370M

Microsemi Corporation

TRANS RF BIPO 600W 25A 55ST1

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 75V
Frequency - Transition: 1.2GHz ~ 1.4GHz
Noise Figure (dB Typ @ f): -
Gain: 8.7dB ~ 9dB
Power - Max: 600W
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 5A, 5V
Current - Collector (Ic) (Max): 25A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 55ST
Supplier Device Package: 55ST

pacchetto: 55ST

Azione3.424

75V

1.2GHz ~ 1.4GHz

-

8.7dB ~ 9dB

600W

10 @ 5A, 5V

25A

200°C (TJ)

Chassis Mount

55ST

1214-110M

Microsemi Corporation

TRANS RF BIPO 270W 8A 55KT1

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 75V
Frequency - Transition: 1.2GHz ~ 1.4GHz
Noise Figure (dB Typ @ f): -
Gain: 7.4dB
Power - Max: 270W
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Current - Collector (Ic) (Max): 8A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 55KT
Supplier Device Package: 55KT

pacchetto: 55KT

Azione6.144

75V

1.2GHz ~ 1.4GHz

-

7.4dB

270W

-

8A

200°C (TJ)

Chassis Mount

55KT

0510-50A

Microsemi Corporation

TRANS RF BIPO 50W 1000MHZ 55AV2

Transistor Type: -
Voltage - Collector Emitter Breakdown (Max): 27V
Frequency - Transition: 500MHz ~ 1GHz
Noise Figure (dB Typ @ f): -
Gain: 7dB
Power - Max: 50W
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 500mA, 5V
Current - Collector (Ic) (Max): 3.7A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 55AV
Supplier Device Package: 55AV

pacchetto: 55AV

Azione2.464

27V

500MHz ~ 1GHz

-

7dB

50W

10 @ 500mA, 5V

3.7A

200°C (TJ)

Chassis Mount

55AV

MS2200

Microsemi Corporation

TRANS RF BIPO 1167W 43.2A MS102

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 65V
Frequency - Transition: 400MHz ~ 500MHz
Noise Figure (dB Typ @ f): -
Gain: 9.7dB
Power - Max: 1167W
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5A, 5V
Current - Collector (Ic) (Max): 43.2A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: M102
Supplier Device Package: M102

pacchetto: M102

Azione7.408

65V

400MHz ~ 500MHz

-

9.7dB

1167W

20 @ 5A, 5V

43.2A

200°C (TJ)

Chassis Mount

M102

1214-150L

Microsemi Corporation

TRANS BIPO 55ST-1

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 65V
Frequency - Transition: 1.2GHz ~ 1.4GHz
Noise Figure (dB Typ @ f): -
Gain: 7.15dB ~ 8.7dB
Power - Max: 320W
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 5V
Current - Collector (Ic) (Max): 15A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 55ST-1
Supplier Device Package: 55ST-1

pacchetto: 55ST-1

Azione6.992

65V

1.2GHz ~ 1.4GHz

-

7.15dB ~ 8.7dB

320W

20 @ 1A, 5V

15A

200°C (TJ)

Chassis Mount

55ST-1

1517-110M

Microsemi Corporation

TRANS RF BIPO 350W 9A 55AW1

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 70V
Frequency - Transition: 1.48GHz ~ 1.65GHz
Noise Figure (dB Typ @ f): -
Gain: 7.3dB ~ 8.6dB
Power - Max: 350W
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 5V
Current - Collector (Ic) (Max): 9A
Operating Temperature: -
Mounting Type: Chassis Mount
Package / Case: 55AW-1
Supplier Device Package: 55AW-1

pacchetto: 55AW-1

Azione7.568

70V

1.48GHz ~ 1.65GHz

-

7.3dB ~ 8.6dB

350W

20 @ 1A, 5V

9A

-

Chassis Mount

55AW-1

UTV8100B

Microsemi Corporation

TRANS RF BIPO 290W 15A 55RT2

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 60V
Frequency - Transition: 470MHz ~ 860MHz
Noise Figure (dB Typ @ f): -
Gain: 8.5dB ~ 9.5dB
Power - Max: 290W
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 5V
Current - Collector (Ic) (Max): 15A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 55RT
Supplier Device Package: 55RT

pacchetto: 55RT

Azione3.424

60V

470MHz ~ 860MHz

-

8.5dB ~ 9.5dB

290W

20 @ 1A, 5V

15A

200°C (TJ)

Chassis Mount

55RT

1214-300

Microsemi Corporation

TRANS RF BIPO 88W 4A 55KT

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 50V
Frequency - Transition: 1.2GHz ~ 1.4GHz
Noise Figure (dB Typ @ f): -
Gain: 7dB
Power - Max: 88W
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 500mA, 5V
Current - Collector (Ic) (Max): 4A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 55KT
Supplier Device Package: 55KT

pacchetto: 55KT

Azione4.368

50V

1.2GHz ~ 1.4GHz

-

7dB

88W

20 @ 500mA, 5V

4A

200°C (TJ)

Chassis Mount

55KT

1214-300M

Microsemi Corporation

TRANS RF BIPO 88W 4A 55ST1

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 50V
Frequency - Transition: 1.2GHz ~ 1.4GHz
Noise Figure (dB Typ @ f): -
Gain: 7dB
Power - Max: 88W
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 500mA, 5V
Current - Collector (Ic) (Max): 4A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 55ST
Supplier Device Package: 55ST

pacchetto: 55ST

Azione6.656

50V

1.2GHz ~ 1.4GHz

-

7dB

88W

20 @ 500mA, 5V

4A

200°C (TJ)

Chassis Mount

55ST

2731-100M

Microsemi Corporation

TRANS RF BIPO 575W 15A 55KS1

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 65V
Frequency - Transition: 2.7GHz ~ 3.1GHz
Noise Figure (dB Typ @ f): -
Gain: 8db ~ 9.4dB
Power - Max: 575W
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 600mA, 5V
Current - Collector (Ic) (Max): 15A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 55KS-1
Supplier Device Package: 55KS-1

pacchetto: 55KS-1

Azione3.248

65V

2.7GHz ~ 3.1GHz

-

8db ~ 9.4dB

575W

15 @ 600mA, 5V

15A

200°C (TJ)

Chassis Mount

55KS-1

TPR700

Microsemi Corporation

TRANS RF BIPO 2050W 55A 55KT1

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 65V
Frequency - Transition: 1.03GHz ~ 1.09GHz
Noise Figure (dB Typ @ f): -
Gain: 6.7dB
Power - Max: 2050W
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 1A, 5V
Current - Collector (Ic) (Max): 55A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 55KT
Supplier Device Package: 55KT

pacchetto: 55KT

Azione6.720

65V

1.03GHz ~ 1.09GHz

-

6.7dB

2050W

10 @ 1A, 5V

55A

200°C (TJ)

Chassis Mount

55KT

2729-170

Microsemi Corporation

TRANS RF BIPO 570W 17A 55KS1

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 65V
Frequency - Transition: 2.7GHz ~ 2.9GHz
Noise Figure (dB Typ @ f): -
Gain: 8.2dB ~ 8.6dB
Power - Max: 570W
DC Current Gain (hFE) (Min) @ Ic, Vce: 18 @ 60mA, 5V
Current - Collector (Ic) (Max): 17A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 55KS-1
Supplier Device Package: 55KS-1

pacchetto: 55KS-1

Azione2.016

65V

2.7GHz ~ 2.9GHz

-

8.2dB ~ 8.6dB

570W

18 @ 60mA, 5V

17A

200°C (TJ)

Chassis Mount

55KS-1

0910-150M

Microsemi Corporation

TRAN RF BIPO 400W 1000MHZ 55KT1

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 65V
Frequency - Transition: 890MHz ~ 1GHz
Noise Figure (dB Typ @ f): -
Gain: 8.1dB ~ 8.5dB
Power - Max: 400W
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Current - Collector (Ic) (Max): 12A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 55KT
Supplier Device Package: 55KT

pacchetto: 55KT

Azione2.592

65V

890MHz ~ 1GHz

-

8.1dB ~ 8.5dB

400W

-

12A

200°C (TJ)

Chassis Mount

55KT

1214-220M

Microsemi Corporation

TRANS RF BIPO 700W 20A 55ST1

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 70V
Frequency - Transition: 1.2GHz ~ 1.4GHz
Noise Figure (dB Typ @ f): -
Gain: 7.4dB
Power - Max: 700W
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 1A, 5V
Current - Collector (Ic) (Max): 20A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 55ST
Supplier Device Package: 55ST

pacchetto: 55ST

Azione6.864

70V

1.2GHz ~ 1.4GHz

-

7.4dB

700W

10 @ 1A, 5V

20A

200°C (TJ)

Chassis Mount

55ST

0910-60M

Microsemi Corporation

TRAN RF BIPO 180W 1000MHZ 55AW

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 65V
Frequency - Transition: 890MHz ~ 1GHz
Noise Figure (dB Typ @ f): -
Gain: 8dB ~ 8.5dB
Power - Max: 180W
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Current - Collector (Ic) (Max): 8A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 55AW
Supplier Device Package: 55AW

pacchetto: 55AW

Azione2.656

65V

890MHz ~ 1GHz

-

8dB ~ 8.5dB

180W

-

8A

200°C (TJ)

Chassis Mount

55AW

2729-125

Microsemi Corporation

TRANS RF BIPO 350W 15A 55KS1

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 65V
Frequency - Transition: 2.7GHz ~ 2.9GHz
Noise Figure (dB Typ @ f): -
Gain: 9dB ~ 9.5dB
Power - Max: 350W
DC Current Gain (hFE) (Min) @ Ic, Vce: 18 @ 600mA, 5V
Current - Collector (Ic) (Max): 15A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 55KS-1
Supplier Device Package: 55KS-1

pacchetto: 55KS-1

Azione5.008

65V

2.7GHz ~ 2.9GHz

-

9dB ~ 9.5dB

350W

18 @ 600mA, 5V

15A

200°C (TJ)

Chassis Mount

55KS-1

MDS400

Microsemi Corporation

TRANS RF BIPO 1450W 40A 55KT1

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 55V
Frequency - Transition: 1.03GHz ~ 1.09GHz
Noise Figure (dB Typ @ f): -
Gain: 6.5dB
Power - Max: 1450W
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 1A, 5V
Current - Collector (Ic) (Max): 40A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 55KT
Supplier Device Package: 55KT

pacchetto: 55KT

Azione6.224

55V

1.03GHz ~ 1.09GHz

-

6.5dB

1450W

10 @ 1A, 5V

40A

200°C (TJ)

Chassis Mount

55KT

MS2267

Microsemi Corporation

TRANS RF BIPO 575W 20A M214

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 60V
Frequency - Transition: 960MHz ~ 1.215GHz
Noise Figure (dB Typ @ f): -
Gain: 8dB ~ 8.7dB
Power - Max: 575W
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 1A, 5V
Current - Collector (Ic) (Max): 20A
Operating Temperature: 250°C (TJ)
Mounting Type: Chassis Mount
Package / Case: M214
Supplier Device Package: M214

pacchetto: M214

Azione4.592

60V

960MHz ~ 1.215GHz

-

8dB ~ 8.7dB

575W

10 @ 1A, 5V

20A

250°C (TJ)

Chassis Mount

M214

TAN300

Microsemi Corporation

TRANS RF BIPO 65V 20A 55KT1

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 65V
Frequency - Transition: 960MHz ~ 1.215GHz
Noise Figure (dB Typ @ f): -
Gain: 6.6dB
Power - Max: 1166W
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 1mA, 5V
Current - Collector (Ic) (Max): 20A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 55KT
Supplier Device Package: 55KT

pacchetto: 55KT

Azione3.744

65V

960MHz ~ 1.215GHz

-

6.6dB

1166W

10 @ 1mA, 5V

20A

200°C (TJ)

Chassis Mount

55KT

UMIL100A

Microsemi Corporation

TRANS RF BIPO 270W 20A 55JU2

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 31V
Frequency - Transition: 225MHz ~ 400MHz
Noise Figure (dB Typ @ f): -
Gain: 7.2dB ~ 8.5dB
Power - Max: 270W
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 1A, 5V
Current - Collector (Ic) (Max): 20A
Operating Temperature: 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 55JU
Supplier Device Package: 55JU

pacchetto: 55JU

Azione2.752

31V

225MHz ~ 400MHz

-

7.2dB ~ 8.5dB

270W

10 @ 1A, 5V

20A

150°C (TJ)

Chassis Mount

55JU

JTDB25

Microsemi Corporation

TRANSISTOR BIPO 55AW-1

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 55V
Frequency - Transition: 960MHz ~ 1.215GHz
Noise Figure (dB Typ @ f): -
Gain: 7.5dB
Power - Max: 97W
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 500mA, 5V
Current - Collector (Ic) (Max): 5A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 55AW-1
Supplier Device Package: 55AW-1

pacchetto: 55AW-1

Azione4.304

55V

960MHz ~ 1.215GHz

-

7.5dB

97W

20 @ 500mA, 5V

5A

200°C (TJ)

Chassis Mount

55AW-1

DME400A

Microsemi Corporation

TRANSISTOR BIPO 55AW-1

Transistor Type: -
Voltage - Collector Emitter Breakdown (Max): -
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Current - Collector (Ic) (Max): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

pacchetto: -

Azione3.344

-

0204-125

Microsemi Corporation

TRANS RF BIPO 125W 500MHZ 55JT2

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 60V
Frequency - Transition: 225MHz ~ 400MHz
Noise Figure (dB Typ @ f): -
Gain: 7dB ~ 8.5dB
Power - Max: 270W
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 5V
Current - Collector (Ic) (Max): 16A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 55JT
Supplier Device Package: 55JT

pacchetto: 55JT

Azione4.816

60V

225MHz ~ 400MHz

-

7dB ~ 8.5dB

270W

20 @ 1A, 5V

16A

200°C (TJ)

Chassis Mount

55JT

MSC1450M

Microsemi Corporation

TRANS RF BIPO 910W 28A M216

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 65V
Frequency - Transition: 1.09GHz
Noise Figure (dB Typ @ f): -
Gain: 7dB
Power - Max: 910W
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 1A, 5V
Current - Collector (Ic) (Max): 28A
Operating Temperature: 250°C (TJ)
Mounting Type: Chassis Mount
Package / Case: M216
Supplier Device Package: M216

pacchetto: M216

Azione5.504

65V

1.09GHz

-

7dB

910W

15 @ 1A, 5V

28A

250°C (TJ)

Chassis Mount

M216

MS2473

Microsemi Corporation

TRANS RF BIPO 2300W 46A M112

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 65V
Frequency - Transition: 1.09GHz
Noise Figure (dB Typ @ f): -
Gain: 6dB
Power - Max: 2300W
DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 1A, 5V
Current - Collector (Ic) (Max): 46A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: M112
Supplier Device Package: M112

pacchetto: M112

Azione6.384

65V

1.09GHz

-

6dB

2300W

5 @ 1A, 5V

46A

200°C (TJ)

Chassis Mount

M112

1214-55

Microsemi Corporation

TRANS BIPO 55AW-1

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 50V
Frequency - Transition: 1.2GHz ~ 1.4GHz
Noise Figure (dB Typ @ f): -
Gain: 7dB
Power - Max: 175W
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 5V
Current - Collector (Ic) (Max): 8A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 55AW
Supplier Device Package: 55AW

pacchetto: 55AW

Azione3.136

50V

1.2GHz ~ 1.4GHz

-

7dB

175W

20 @ 1A, 5V

8A

200°C (TJ)

Chassis Mount

55AW

MS2421

Microsemi Corporation

TRANS RF BIPO 875W 22A M103

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 65V
Frequency - Transition: 1.025GHz ~ 1.15GHz
Noise Figure (dB Typ @ f): -
Gain: 6.3dB
Power - Max: 875W
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 500mA, 5V
Current - Collector (Ic) (Max): 22A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: M103
Supplier Device Package: M103

pacchetto: M103

Azione7.232

65V

1.025GHz ~ 1.15GHz

-

6.3dB

875W

10 @ 500mA, 5V

22A

200°C (TJ)

Chassis Mount

M103

TAN250A

Microsemi Corporation

TRANS RF BIPO 60V 30A 55AW1

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 60V
Frequency - Transition: 960MHz ~ 1.215GHz
Noise Figure (dB Typ @ f): -
Gain: 6.2db ~ 7dB
Power - Max: 575W
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 1A, 5V
Current - Collector (Ic) (Max): 30A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 55AW
Supplier Device Package: 55AW

pacchetto: 55AW

Azione4.208

60V

960MHz ~ 1.215GHz

-

6.2db ~ 7dB

575W

10 @ 1A, 5V

30A

200°C (TJ)

Chassis Mount

55AW

1214-32L

Microsemi Corporation

TRANS RF BIPO 125W 5A 55AW1

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 50V
Frequency - Transition: 1.2GHz ~ 1.4GHz
Noise Figure (dB Typ @ f): -
Gain: 7.8dB ~ 8.9dB
Power - Max: 125W
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 5V
Current - Collector (Ic) (Max): 5A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 55AW-1
Supplier Device Package: 55AW-1

pacchetto: 55AW-1

Azione6.304

50V

1.2GHz ~ 1.4GHz

-

7.8dB ~ 8.9dB

125W

20 @ 1A, 5V

5A

200°C (TJ)

Chassis Mount

55AW-1