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Prodotti STMicroelectronics - Diodi - Raddrizzatori - Singoli

Record 769
Pagina  20/26
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
Azione
Quantità
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
BYW98-200RL
STMicroelectronics

DIODE GEN PURP 200V 3A DO201AD

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 9A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35ns
  • Current - Reverse Leakage @ Vr: 10µA @ 200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-201AD, Axial
  • Supplier Device Package: DO-201AD
  • Operating Temperature - Junction: 150°C (Max)
pacchetto: DO-201AD, Axial
Azione4.816
200V
3A
1.2V @ 9A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 200V
-
Through Hole
DO-201AD, Axial
DO-201AD
150°C (Max)
hot STTA106U
STMicroelectronics

DIODE GEN PURP 600V 1A SMB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.75V @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50ns
  • Current - Reverse Leakage @ Vr: 10µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: SMB
  • Operating Temperature - Junction: 125°C (Max)
pacchetto: DO-214AA, SMB
Azione636.000
600V
1A
1.75V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
10µA @ 600V
-
Surface Mount
DO-214AA, SMB
SMB
125°C (Max)
BYT01-400
STMicroelectronics

DIODE GEN PURP 400V 1A DO15

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.5V @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 55ns
  • Current - Reverse Leakage @ Vr: 20µA @ 400V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-204AC, DO-15, Axial
  • Supplier Device Package: DO-15
  • Operating Temperature - Junction: -40°C ~ 150°C
pacchetto: DO-204AC, DO-15, Axial
Azione3.568
400V
1A
1.5V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
55ns
20µA @ 400V
-
Through Hole
DO-204AC, DO-15, Axial
DO-15
-40°C ~ 150°C
STTH106
STMicroelectronics

DIODE GEN PURP 600V 1A DO41

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 45ns
  • Current - Reverse Leakage @ Vr: 1µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-41
  • Operating Temperature - Junction: 175°C (Max)
pacchetto: DO-204AL, DO-41, Axial
Azione4.928
600V
1A
1.7V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
45ns
1µA @ 600V
-
Through Hole
DO-204AL, DO-41, Axial
DO-41
175°C (Max)
hot STPR820D
STMicroelectronics

DIODE GEN PURP 200V 8A TO220AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 1.25V @ 16A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 30ns
  • Current - Reverse Leakage @ Vr: 50µA @ 200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220AC
  • Operating Temperature - Junction: 150°C (Max)
pacchetto: TO-220-2
Azione32.136
200V
8A
1.25V @ 16A
Fast Recovery =< 500ns, > 200mA (Io)
30ns
50µA @ 200V
-
Through Hole
TO-220-2
TO-220AC
150°C (Max)
hot STTA806D
STMicroelectronics

DIODE GEN PURP 600V 8A TO220AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 1.75V @ 8A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 52ns
  • Current - Reverse Leakage @ Vr: 100µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220AC
  • Operating Temperature - Junction: 150°C (Max)
pacchetto: TO-220-2
Azione191.088
600V
8A
1.75V @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
52ns
100µA @ 600V
-
Through Hole
TO-220-2
TO-220AC
150°C (Max)
hot BYW80-200
STMicroelectronics

DIODE GEN PURP 200V 10A TO220AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 1.15V @ 15A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35ns
  • Current - Reverse Leakage @ Vr: 10µA @ 200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220AC
  • Operating Temperature - Junction: 150°C (Max)
pacchetto: TO-220-2
Azione77.964
200V
10A
1.15V @ 15A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 200V
-
Through Hole
TO-220-2
TO-220AC
150°C (Max)
hot STTA512F
STMicroelectronics

DIODE GEN 1.2KV 5A ISOWATT220AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 2.2V @ 5A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 95ns
  • Current - Reverse Leakage @ Vr: 100µA @ 1200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: ISOWATT220AC-3
  • Supplier Device Package: ISOWATT-220AC
  • Operating Temperature - Junction: 150°C (Max)
pacchetto: ISOWATT220AC-3
Azione6.156
1200V
5A
2.2V @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
95ns
100µA @ 1200V
-
Through Hole
ISOWATT220AC-3
ISOWATT-220AC
150°C (Max)
hot STTA1206D
STMicroelectronics

DIODE GEN PURP 600V 12A TO220AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 12A
  • Voltage - Forward (Vf) (Max) @ If: 1.75V @ 12A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 55ns
  • Current - Reverse Leakage @ Vr: 100µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220AC
  • Operating Temperature - Junction: 150°C (Max)
pacchetto: TO-220-2
Azione78.864
600V
12A
1.75V @ 12A
Fast Recovery =< 500ns, > 200mA (Io)
55ns
100µA @ 600V
-
Through Hole
TO-220-2
TO-220AC
150°C (Max)
hot STTA2006P
STMicroelectronics

DIODE GEN PURP 600V 20A SOD93-2

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 20A
  • Voltage - Forward (Vf) (Max) @ If: 1.75V @ 20A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 60ns
  • Current - Reverse Leakage @ Vr: 100µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: SOD-93-2
  • Supplier Device Package: SOD-93-2
  • Operating Temperature - Junction: 150°C (Max)
pacchetto: SOD-93-2
Azione18.000
600V
20A
1.75V @ 20A
Fast Recovery =< 500ns, > 200mA (Io)
60ns
100µA @ 600V
-
Through Hole
SOD-93-2
SOD-93-2
150°C (Max)
hot BYT12PI-1000
STMicroelectronics

DIODE GEN PURP 1KV 12A TO220AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1000V
  • Current - Average Rectified (Io): 12A
  • Voltage - Forward (Vf) (Max) @ If: 1.9V @ 12A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 155ns
  • Current - Reverse Leakage @ Vr: 50µA @ 1000V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2 Isolated Tab
  • Supplier Device Package: TO220AC Isolated
  • Operating Temperature - Junction: -40°C ~ 150°C
pacchetto: TO-220-2 Isolated Tab
Azione66.000
1000V
12A
1.9V @ 12A
Fast Recovery =< 500ns, > 200mA (Io)
155ns
50µA @ 1000V
-
Through Hole
TO-220-2 Isolated Tab
TO220AC Isolated
-40°C ~ 150°C
hot BYT30PI-1000
STMicroelectronics

DIODE GEN PURP 1KV 30A DOP3I

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1000V
  • Current - Average Rectified (Io): 30A
  • Voltage - Forward (Vf) (Max) @ If: 1.9V @ 30A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 165ns
  • Current - Reverse Leakage @ Vr: 100µA @ 1000V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DOP3I-2 Insulated (Straight Leads)
  • Supplier Device Package: DOP3I
  • Operating Temperature - Junction: -40°C ~ 150°C
pacchetto: DOP3I-2 Insulated (Straight Leads)
Azione75.600
1000V
30A
1.9V @ 30A
Fast Recovery =< 500ns, > 200mA (Io)
165ns
100µA @ 1000V
-
Through Hole
DOP3I-2 Insulated (Straight Leads)
DOP3I
-40°C ~ 150°C
hot STTA806DI
STMicroelectronics

DIODE GEN PURP 600V 8A TO220AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 1.75V @ 8A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 52ns
  • Current - Reverse Leakage @ Vr: 100µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2 Insulated, TO-220AC
  • Supplier Device Package: TO-220AC ins
  • Operating Temperature - Junction: 150°C (Max)
pacchetto: TO-220-2 Insulated, TO-220AC
Azione1.664.220
600V
8A
1.75V @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
52ns
100µA @ 600V
-
Through Hole
TO-220-2 Insulated, TO-220AC
TO-220AC ins
150°C (Max)
hot STTA2006PI
STMicroelectronics

DIODE GEN PURP 600V 20A DOP3I

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 20A
  • Voltage - Forward (Vf) (Max) @ If: 1.75V @ 20A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 60ns
  • Current - Reverse Leakage @ Vr: 100µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DOP3I-2 Insulated (Straight Leads)
  • Supplier Device Package: DOP3I
  • Operating Temperature - Junction: 150°C (Max)
pacchetto: DOP3I-2 Insulated (Straight Leads)
Azione4.320
600V
20A
1.75V @ 20A
Fast Recovery =< 500ns, > 200mA (Io)
60ns
100µA @ 600V
-
Through Hole
DOP3I-2 Insulated (Straight Leads)
DOP3I
150°C (Max)
1N5820RL
STMicroelectronics

DIODE SCHOTTKY 20V 3A DO201AD

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 20V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 475mV @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 2mA @ 20V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-201AD, Axial
  • Supplier Device Package: DO-201AD
  • Operating Temperature - Junction: 150°C (Max)
pacchetto: DO-201AD, Axial
Azione4.944
20V
3A
475mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
2mA @ 20V
-
Through Hole
DO-201AD, Axial
DO-201AD
150°C (Max)
hot 1N5820
STMicroelectronics

DIODE SCHOTTKY 20V 3A DO201AD

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 20V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 475mV @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 2mA @ 20V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-201AD, Axial
  • Supplier Device Package: DO-201AD
  • Operating Temperature - Junction: 150°C (Max)
pacchetto: DO-201AD, Axial
Azione24.624
20V
3A
475mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
2mA @ 20V
-
Through Hole
DO-201AD, Axial
DO-201AD
150°C (Max)
hot STTH4R02
STMicroelectronics

DIODE GEN PURP 200V 4A DO201AB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 4A
  • Voltage - Forward (Vf) (Max) @ If: 1.05V @ 4A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 30ns
  • Current - Reverse Leakage @ Vr: 3µA @ 200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-201AB, DO-32, Axial
  • Supplier Device Package: DO-201AB
  • Operating Temperature - Junction: 175°C (Max)
pacchetto: DO-201AB, DO-32, Axial
Azione21.600
200V
4A
1.05V @ 4A
Fast Recovery =< 500ns, > 200mA (Io)
30ns
3µA @ 200V
-
Through Hole
DO-201AB, DO-32, Axial
DO-201AB
175°C (Max)
hot STTH4R02RL
STMicroelectronics

DIODE GEN PURP 200V 4A DO201AB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 4A
  • Voltage - Forward (Vf) (Max) @ If: 1.25V @ 12A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 30ns
  • Current - Reverse Leakage @ Vr: 3µA @ 200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-201AB, DO-32, Axial
  • Supplier Device Package: DO-201AB
  • Operating Temperature - Junction: 175°C (Max)
pacchetto: DO-201AB, DO-32, Axial
Azione159.600
200V
4A
1.25V @ 12A
Fast Recovery =< 500ns, > 200mA (Io)
30ns
3µA @ 200V
-
Through Hole
DO-201AB, DO-32, Axial
DO-201AB
175°C (Max)
STTH200F04TV1
STMicroelectronics

DIODE MODULE 400V ISOTOP

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
pacchetto: -
Azione5.824
-
-
-
-
-
-
-
-
-
-
-
STPSC40065CWY
STMicroelectronics

DIODE SCHOTTKY 650V TO-247

  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 650V
  • Current - Average Rectified (Io): 20A
  • Voltage - Forward (Vf) (Max) @ If: 1.45V @ 20A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0ns
  • Current - Reverse Leakage @ Vr: 300µA @ 650V
  • Capacitance @ Vr, F: 1250pF @ 0V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
  • Operating Temperature - Junction: -40°C ~ 175°C
pacchetto: TO-247-3
Azione5.584
650V
20A
1.45V @ 20A
No Recovery Time > 500mA (Io)
0ns
300µA @ 650V
1250pF @ 0V, 1MHz
Through Hole
TO-247-3
TO-247
-40°C ~ 175°C
STPSC20065WY
STMicroelectronics

DIODE SCHOTTKY 650V DO-247

  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 650V
  • Current - Average Rectified (Io): 20A
  • Voltage - Forward (Vf) (Max) @ If: 1.45V @ 20A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0ns
  • Current - Reverse Leakage @ Vr: 300µA @ 650V
  • Capacitance @ Vr, F: 1250pF @ 0V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-247-2 (Straight Leads)
  • Supplier Device Package: DO-247
  • Operating Temperature - Junction: -40°C ~ 175°C
pacchetto: DO-247-2 (Straight Leads)
Azione6.144
650V
20A
1.45V @ 20A
No Recovery Time > 500mA (Io)
0ns
300µA @ 650V
1250pF @ 0V, 1MHz
Through Hole
DO-247-2 (Straight Leads)
DO-247
-40°C ~ 175°C
STPSC20065W
STMicroelectronics

DIODE SCHOTTKY 650V DO-247

  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 650V
  • Current - Average Rectified (Io): 20A
  • Voltage - Forward (Vf) (Max) @ If: 1.45V @ 20A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0ns
  • Current - Reverse Leakage @ Vr: 300µA @ 650V
  • Capacitance @ Vr, F: 1250pF @ 0V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-247-2 (Straight Leads)
  • Supplier Device Package: DO-247
  • Operating Temperature - Junction: -40°C ~ 175°C
pacchetto: DO-247-2 (Straight Leads)
Azione4.160
650V
20A
1.45V @ 20A
No Recovery Time > 500mA (Io)
0ns
300µA @ 650V
1250pF @ 0V, 1MHz
Through Hole
DO-247-2 (Straight Leads)
DO-247
-40°C ~ 175°C
hot STTH60R04W
STMicroelectronics

DIODE GEN PURP 400V 60A DO247

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 60A
  • Voltage - Forward (Vf) (Max) @ If: 1.5V @ 60A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 80ns
  • Current - Reverse Leakage @ Vr: 60µA @ 400V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-247-2 (Straight Leads)
  • Supplier Device Package: DO-247
  • Operating Temperature - Junction: -40°C ~ 175°C
pacchetto: DO-247-2 (Straight Leads)
Azione7.904
400V
60A
1.5V @ 60A
Fast Recovery =< 500ns, > 200mA (Io)
80ns
60µA @ 400V
-
Through Hole
DO-247-2 (Straight Leads)
DO-247
-40°C ~ 175°C
STPSC20065DI
STMicroelectronics

DIODE SCHOTTKY 650V TO220AC INS

  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 650V
  • Current - Average Rectified (Io): 20A
  • Voltage - Forward (Vf) (Max) @ If: 1.45V @ 20A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0ns
  • Current - Reverse Leakage @ Vr: 300µA @ 650V
  • Capacitance @ Vr, F: 1250pF @ 0V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2 Insulated, TO-220AC
  • Supplier Device Package: TO-220AC ins
  • Operating Temperature - Junction: -40°C ~ 175°C
pacchetto: TO-220-2 Insulated, TO-220AC
Azione2.096
650V
20A
1.45V @ 20A
No Recovery Time > 500mA (Io)
0ns
300µA @ 650V
1250pF @ 0V, 1MHz
Through Hole
TO-220-2 Insulated, TO-220AC
TO-220AC ins
-40°C ~ 175°C
STPSC20065D
STMicroelectronics

DIODE SCHOTTKY 650V TO220AC

  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 650V
  • Current - Average Rectified (Io): 20A
  • Voltage - Forward (Vf) (Max) @ If: 1.45V @ 20A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0ns
  • Current - Reverse Leakage @ Vr: 300µA @ 650V
  • Capacitance @ Vr, F: 1250pF @ 0V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220AC
  • Operating Temperature - Junction: -40°C ~ 175°C
pacchetto: TO-220-2
Azione3.456
650V
20A
1.45V @ 20A
No Recovery Time > 500mA (Io)
0ns
300µA @ 650V
1250pF @ 0V, 1MHz
Through Hole
TO-220-2
TO-220AC
-40°C ~ 175°C
STPSC6H065DI
STMicroelectronics

DIODE SCHOTTKY 650V 6A TO220AC

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 650V
  • Current - Average Rectified (Io): 6A
  • Voltage - Forward (Vf) (Max) @ If: 1.75V @ 6A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 60µA @ 650V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2 Insulated, TO-220AC
  • Supplier Device Package: TO-220AC ins
  • Operating Temperature - Junction: -40°C ~ 175°C
pacchetto: TO-220-2 Insulated, TO-220AC
Azione7.424
650V
6A
1.75V @ 6A
Fast Recovery =< 500ns, > 200mA (Io)
-
60µA @ 650V
-
Through Hole
TO-220-2 Insulated, TO-220AC
TO-220AC ins
-40°C ~ 175°C
hot STTH61W04SW
STMicroelectronics

DIODE GEN PURP 400V 60A TO247

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 60A
  • Voltage - Forward (Vf) (Max) @ If: 1.35V @ 60A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 55ns
  • Current - Reverse Leakage @ Vr: 20µA @ 400V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
  • Operating Temperature - Junction: 175°C (Max)
pacchetto: TO-247-3
Azione4.048
400V
60A
1.35V @ 60A
Fast Recovery =< 500ns, > 200mA (Io)
55ns
20µA @ 400V
-
Through Hole
TO-247-3
TO-247
175°C (Max)
STPSC12065D
STMicroelectronics

DIODE SCHOTTKY 650V 12A TO220AC

  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 650V
  • Current - Average Rectified (Io): 12A
  • Voltage - Forward (Vf) (Max) @ If: 1.45V @ 12A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0ns
  • Current - Reverse Leakage @ Vr: 150µA @ 650V
  • Capacitance @ Vr, F: 750pF @ 0V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220AC
  • Operating Temperature - Junction: -40°C ~ 175°C
pacchetto: TO-220-2
Azione7.424
650V
12A
1.45V @ 12A
No Recovery Time > 500mA (Io)
0ns
150µA @ 650V
750pF @ 0V, 1MHz
Through Hole
TO-220-2
TO-220AC
-40°C ~ 175°C
SPV1540N
STMicroelectronics

IC COOL BYPASS SW 40V 8VFQFPN

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 12V
  • Current - Average Rectified (Io): 16A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 140mV @ 16A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10µA @ 12V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerVDFN
  • Supplier Device Package: 8-VFQFPN (6x5)
  • Operating Temperature - Junction: -40°C ~ 150°C
pacchetto: 8-PowerVDFN
Azione7.728
12V
16A (DC)
140mV @ 16A
Fast Recovery =< 500ns, > 200mA (Io)
-
10µA @ 12V
-
Surface Mount
8-PowerVDFN
8-VFQFPN (6x5)
-40°C ~ 150°C
STPS20M60ST
STMicroelectronics

DIODE SCHOTTKY 60V 20A TO220AB

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 60V
  • Current - Average Rectified (Io): 20A
  • Voltage - Forward (Vf) (Max) @ If: 565mV @ 20A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 125µA @ 60V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
  • Operating Temperature - Junction: 150°C (Max)
pacchetto: TO-220-3
Azione6.144
60V
20A
565mV @ 20A
Fast Recovery =< 500ns, > 200mA (Io)
-
125µA @ 60V
-
Through Hole
TO-220-3
TO-220AB
150°C (Max)