Pagina 5 - Prodotti STMicroelectronics - Transistor - FET, MOSFET - Singoli | Heisener Electronics
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Prodotti STMicroelectronics - Transistor - FET, MOSFET - Singoli

Record 2.162
Pagina  5/73
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
Azione
Quantità
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
hot STD6NK50ZT4
STMicroelectronics

MOSFET N-CH 500V 5.6A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 50µA
  • Gate Charge (Qg) (Max) @ Vgs: 24.6nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 690pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 90W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 2.8A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D-Pak
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
pacchetto: TO-252-3, DPak (2 Leads + Tab), SC-63
Azione1.002.900
MOSFET (Metal Oxide)
500V
5.6A (Tc)
10V
4.5V @ 50µA
24.6nC @ 10V
690pF @ 25V
±30V
-
90W (Tc)
1.2 Ohm @ 2.8A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
D-Pak
TO-252-3, DPak (2 Leads + Tab), SC-63
hot STS1NK60Z
STMicroelectronics

MOSFET N-CH 600V 0.25A 8-SOIC

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 250mA (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 50µA
  • Gate Charge (Qg) (Max) @ Vgs: 6.9nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 94pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 2W (Tc)
  • Rds On (Max) @ Id, Vgs: 15 Ohm @ 400mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SO
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione205.704
MOSFET (Metal Oxide)
600V
250mA (Tc)
10V
4.5V @ 50µA
6.9nC @ 10V
94pF @ 25V
±30V
-
2W (Tc)
15 Ohm @ 400mA, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-SO
8-SOIC (0.154", 3.90mm Width)
STL8P2UH7
STMicroelectronics

MOSFET P-CH 20V 8A POWERFLAT22

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 2390pF @ 16V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 2.4W (Tc)
  • Rds On (Max) @ Id, Vgs: 22.5 mOhm @ 4A, 4.5V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerFlat? (2x2)
  • Package / Case: 6-PowerWDFN
pacchetto: 6-PowerWDFN
Azione27.744
MOSFET (Metal Oxide)
20V
8A (Tc)
1.5V, 4.5V
1V @ 250µA
22nC @ 4.5V
2390pF @ 16V
±8V
-
2.4W (Tc)
22.5 mOhm @ 4A, 4.5V
150°C (TJ)
Surface Mount
PowerFlat? (2x2)
6-PowerWDFN
hot STQ1NK60ZR-AP
STMicroelectronics

MOSFET N-CH 600V 0.3A TO-92

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 300mA (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 50µA
  • Gate Charge (Qg) (Max) @ Vgs: 6.9nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 94pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 3W (Tc)
  • Rds On (Max) @ Id, Vgs: 15 Ohm @ 400mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-92-3
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
pacchetto: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Azione554.052
MOSFET (Metal Oxide)
600V
300mA (Tc)
10V
4.5V @ 50µA
6.9nC @ 10V
94pF @ 25V
±30V
-
3W (Tc)
15 Ohm @ 400mA, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-92-3
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
hot STW55NM60ND
STMicroelectronics

MOSFET N-CH 600V 51A TO-247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 190nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 5800pF @ 50V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 350W (Tc)
  • Rds On (Max) @ Id, Vgs: 60 mOhm @ 25.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-3
  • Package / Case: TO-247-3
pacchetto: TO-247-3
Azione11.148
MOSFET (Metal Oxide)
600V
51A (Tc)
10V
5V @ 250µA
190nC @ 10V
5800pF @ 50V
±25V
-
350W (Tc)
60 mOhm @ 25.5A, 10V
150°C (TJ)
Through Hole
TO-247-3
TO-247-3
STW60NM50N
STMicroelectronics

MOSFET N CH 500V 68A TO-247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 68A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 178nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 5790pF @ 100V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 446W (Tc)
  • Rds On (Max) @ Id, Vgs: 43 mOhm @ 34A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247
  • Package / Case: TO-247-3
pacchetto: TO-247-3
Azione14.040
MOSFET (Metal Oxide)
500V
68A (Tc)
10V
4V @ 250µA
178nC @ 10V
5790pF @ 100V
±25V
-
446W (Tc)
43 mOhm @ 34A, 10V
150°C (TJ)
Through Hole
TO-247
TO-247-3
STW21N150K5
STMicroelectronics

MOSFET N-CH 1500V 14A TO-247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1500V
  • Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 89nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3145pF @ 100V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 446W (Tc)
  • Rds On (Max) @ Id, Vgs: 900 mOhm @ 7A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247
  • Package / Case: TO-247-3
pacchetto: TO-247-3
Azione7.788
MOSFET (Metal Oxide)
1500V
14A (Tc)
10V
5V @ 100µA
89nC @ 10V
3145pF @ 100V
±30V
-
446W (Tc)
900 mOhm @ 7A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-247
TO-247-3
hot STW70N60M2
STMicroelectronics

MOSFET N-CH 600V 68A TO247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 68A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 118nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 5200pF @ 100V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 450W (Tc)
  • Rds On (Max) @ Id, Vgs: 40 mOhm @ 34A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247
  • Package / Case: TO-247-3
pacchetto: TO-247-3
Azione6.800
MOSFET (Metal Oxide)
600V
68A (Tc)
10V
4V @ 250µA
118nC @ 10V
5200pF @ 100V
±25V
-
450W (Tc)
40 mOhm @ 34A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-247
TO-247-3
hot STW57N65M5
STMicroelectronics

MOSFET N-CH 650V 42A TO-247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 98nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4200pF @ 100V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 250W (Tc)
  • Rds On (Max) @ Id, Vgs: 63 mOhm @ 21A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247
  • Package / Case: TO-247-3
pacchetto: TO-247-3
Azione7.568
MOSFET (Metal Oxide)
650V
42A (Tc)
10V
5V @ 250µA
98nC @ 10V
4200pF @ 100V
±25V
-
250W (Tc)
63 mOhm @ 21A, 10V
150°C (TJ)
Through Hole
TO-247
TO-247-3
STW65N80K5
STMicroelectronics

MOSFET N-CH 800V 46A

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800V
  • Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 92nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3230pF @ 100V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 446W (Tc)
  • Rds On (Max) @ Id, Vgs: 80 mOhm @ 23A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247
  • Package / Case: TO-247-3
pacchetto: TO-247-3
Azione17.280
MOSFET (Metal Oxide)
800V
46A (Tc)
10V
5V @ 100µA
92nC @ 10V
3230pF @ 100V
±30V
-
446W (Tc)
80 mOhm @ 23A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-247
TO-247-3
hot STW43NM60ND
STMicroelectronics

MOSFET N-CH 600V 35A TO-247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 145nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4300pF @ 50V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 255W (Tc)
  • Rds On (Max) @ Id, Vgs: 88 mOhm @ 17.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-3
  • Package / Case: TO-247-3
pacchetto: TO-247-3
Azione163.800
MOSFET (Metal Oxide)
600V
35A (Tc)
10V
5V @ 250µA
145nC @ 10V
4300pF @ 50V
±25V
-
255W (Tc)
88 mOhm @ 17.5A, 10V
150°C (TJ)
Through Hole
TO-247-3
TO-247-3
STW12N150K5
STMicroelectronics

MOSFET N-CH 1500V 7A TO-247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1500V
  • Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 47nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1360pF @ 100V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 250W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.9 Ohm @ 3.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247
  • Package / Case: TO-247-3
pacchetto: TO-247-3
Azione12.600
MOSFET (Metal Oxide)
1500V
7A (Tc)
10V
5V @ 100µA
47nC @ 10V
1360pF @ 100V
±30V
-
250W (Tc)
1.9 Ohm @ 3.5A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-247
TO-247-3
hot STW26NM50
STMicroelectronics

MOSFET N-CH 500V 30A TO-247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 106nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 313W (Tc)
  • Rds On (Max) @ Id, Vgs: 120 mOhm @ 13A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-3
  • Package / Case: TO-247-3
pacchetto: TO-247-3
Azione42.108
MOSFET (Metal Oxide)
500V
30A (Tc)
10V
5V @ 250µA
106nC @ 10V
3000pF @ 25V
±30V
-
313W (Tc)
120 mOhm @ 13A, 10V
150°C (TJ)
Through Hole
TO-247-3
TO-247-3
STW72N60DM2AG
STMicroelectronics

MOSFET N-CH 600V 66A

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 66A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 121nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 5508pF @ 100V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 446W (Tc)
  • Rds On (Max) @ Id, Vgs: 42 mOhm @ 33A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247
  • Package / Case: TO-247-3
pacchetto: TO-247-3
Azione12.156
MOSFET (Metal Oxide)
600V
66A (Tc)
10V
5V @ 250µA
121nC @ 10V
5508pF @ 100V
±25V
-
446W (Tc)
42 mOhm @ 33A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-247
TO-247-3
STW65N65DM2AG
STMicroelectronics

MOSFET N-CH 650V 60A

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 5500pF @ 100V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 446W (Tc)
  • Rds On (Max) @ Id, Vgs: 50 mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247
  • Package / Case: TO-247-3
pacchetto: TO-247-3
Azione7.200
MOSFET (Metal Oxide)
650V
60A (Tc)
10V
5V @ 250µA
120nC @ 10V
5500pF @ 100V
±25V
-
446W (Tc)
50 mOhm @ 30A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-247
TO-247-3
STP42N60M2-EP
STMicroelectronics

MOSFET N-CH 600V 34A EP TO220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2370pF @ 100V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 250W (Tc)
  • Rds On (Max) @ Id, Vgs: 87 mOhm @ 17A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220
  • Package / Case: TO-220-3
pacchetto: TO-220-3
Azione14.874
MOSFET (Metal Oxide)
600V
34A (Tc)
10V
4V @ 250µA
55nC @ 10V
2370pF @ 100V
±25V
-
250W (Tc)
87 mOhm @ 17A, 10V
150°C (TJ)
Through Hole
TO-220
TO-220-3
STF25N80K5
STMicroelectronics

MOSFET N-CH 800V 19.5A TO220FP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800V
  • Current - Continuous Drain (Id) @ 25°C: 19.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 100V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 40W (Tc)
  • Rds On (Max) @ Id, Vgs: 260 mOhm @ 19.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FP
  • Package / Case: TO-220-3 Full Pack
pacchetto: TO-220-3 Full Pack
Azione9.096
MOSFET (Metal Oxide)
800V
19.5A (Tc)
10V
5V @ 100µA
40nC @ 10V
1600pF @ 100V
±30V
-
40W (Tc)
260 mOhm @ 19.5A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220FP
TO-220-3 Full Pack
hot STW75NF30
STMicroelectronics

MOSFET N-CH 300V 60A TO-247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 300V
  • Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 164nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 5930pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 320W (Tc)
  • Rds On (Max) @ Id, Vgs: 45 mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-3
  • Package / Case: TO-247-3
pacchetto: TO-247-3
Azione74.628
MOSFET (Metal Oxide)
300V
60A (Tc)
10V
4V @ 250µA
164nC @ 10V
5930pF @ 25V
±20V
-
320W (Tc)
45 mOhm @ 30A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247-3
hot STW26NM60N
STMicroelectronics

MOSFET N-CH 600V 20A TO-247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 50V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 140W (Tc)
  • Rds On (Max) @ Id, Vgs: 165 mOhm @ 10A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-3
  • Package / Case: TO-247-3
pacchetto: TO-247-3
Azione55.596
MOSFET (Metal Oxide)
600V
20A (Tc)
10V
4V @ 250µA
60nC @ 10V
1800pF @ 50V
±30V
-
140W (Tc)
165 mOhm @ 10A, 10V
150°C (TJ)
Through Hole
TO-247-3
TO-247-3
hot STP3N150
STMicroelectronics

MOSFET N-CH 1500V 2.5A TO-220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1500V
  • Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 29.3nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 939pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 140W (Tc)
  • Rds On (Max) @ Id, Vgs: 9 Ohm @ 1.3A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
pacchetto: TO-220-3
Azione7.072
MOSFET (Metal Oxide)
1500V
2.5A (Tc)
10V
5V @ 250µA
29.3nC @ 10V
939pF @ 25V
±30V
-
140W (Tc)
9 Ohm @ 1.3A, 10V
150°C (TJ)
Through Hole
TO-220AB
TO-220-3
hot STF21N90K5
STMicroelectronics

MOSFET N-CH 900V 18.5A TO-220FP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 900V
  • Current - Continuous Drain (Id) @ 25°C: 18.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1645pF @ 100V
  • Vgs (Max): ±30V
  • FET Feature: Current Sensing
  • Power Dissipation (Max): 40W (Tc)
  • Rds On (Max) @ Id, Vgs: 299 mOhm @ 9A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FP
  • Package / Case: TO-220-3 Full Pack
pacchetto: TO-220-3 Full Pack
Azione107.040
MOSFET (Metal Oxide)
900V
18.5A (Tc)
10V
5V @ 100µA
43nC @ 10V
1645pF @ 100V
±30V
Current Sensing
40W (Tc)
299 mOhm @ 9A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220FP
TO-220-3 Full Pack
hot STW15NK90Z
STMicroelectronics

MOSFET N-CH 900V 15A TO-247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 900V
  • Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 150µA
  • Gate Charge (Qg) (Max) @ Vgs: 256nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 6100pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 350W (Tc)
  • Rds On (Max) @ Id, Vgs: 550 mOhm @ 7.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-3
  • Package / Case: TO-247-3
pacchetto: TO-247-3
Azione17.532
MOSFET (Metal Oxide)
900V
15A (Tc)
10V
4.5V @ 150µA
256nC @ 10V
6100pF @ 25V
±30V
-
350W (Tc)
550 mOhm @ 7.5A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247-3
hot STW11NM80
STMicroelectronics

MOSFET N-CH 800V 11A TO-247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800V
  • Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 43.6nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1630pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 150W (Tc)
  • Rds On (Max) @ Id, Vgs: 400 mOhm @ 5.5A, 10V
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-3
  • Package / Case: TO-247-3
pacchetto: TO-247-3
Azione12.732
MOSFET (Metal Oxide)
800V
11A (Tc)
10V
5V @ 250µA
43.6nC @ 10V
1630pF @ 25V
±30V
-
150W (Tc)
400 mOhm @ 5.5A, 10V
-65°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247-3
hot STW6N120K3
STMicroelectronics

MOSFET N-CH 1200V 6A TO-247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1200V
  • Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1050pF @ 100V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 150W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.4 Ohm @ 2.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247
  • Package / Case: TO-247-3
pacchetto: TO-247-3
Azione46.836
MOSFET (Metal Oxide)
1200V
6A (Tc)
10V
5V @ 100µA
34nC @ 10V
1050pF @ 100V
±30V
-
150W (Tc)
2.4 Ohm @ 2.5A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-247
TO-247-3
hot STW11NK100Z
STMicroelectronics

MOSFET N-CH 1KV 8.3A TO-247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1000V
  • Current - Continuous Drain (Id) @ 25°C: 8.3A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 162nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3500pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 230W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.38 Ohm @ 4.15A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-3
  • Package / Case: TO-247-3
pacchetto: TO-247-3
Azione49.500
MOSFET (Metal Oxide)
1000V
8.3A (Tc)
10V
4.5V @ 100µA
162nC @ 10V
3500pF @ 25V
±30V
-
230W (Tc)
1.38 Ohm @ 4.15A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247-3
hot STW20NM60
STMicroelectronics

MOSFET N-CH 600V 20A TO-247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 54nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 192W (Tc)
  • Rds On (Max) @ Id, Vgs: 290 mOhm @ 10A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-3
  • Package / Case: TO-247-3
pacchetto: TO-247-3
Azione48.576
MOSFET (Metal Oxide)
600V
20A (Tc)
10V
5V @ 250µA
54nC @ 10V
1500pF @ 25V
±30V
-
192W (Tc)
290 mOhm @ 10A, 10V
150°C (TJ)
Through Hole
TO-247-3
TO-247-3
hot STF11NM80
STMicroelectronics

MOSFET N-CH 800V 11A TO220FP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800V
  • Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 43.6nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1630pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 35W (Tc)
  • Rds On (Max) @ Id, Vgs: 400 mOhm @ 5.5A, 10V
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FP
  • Package / Case: TO-220-3 Full Pack
pacchetto: TO-220-3 Full Pack
Azione585.672
MOSFET (Metal Oxide)
800V
11A (Tc)
10V
5V @ 250µA
43.6nC @ 10V
1630pF @ 25V
±30V
-
35W (Tc)
400 mOhm @ 5.5A, 10V
-65°C ~ 150°C (TJ)
Through Hole
TO-220FP
TO-220-3 Full Pack
hot STP6N120K3
STMicroelectronics

MOSFET N-CH 1200V 6A TO-220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1200V
  • Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1050pF @ 100V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 150W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.4 Ohm @ 2.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220
  • Package / Case: TO-220-3
pacchetto: TO-220-3
Azione9.744
MOSFET (Metal Oxide)
1200V
6A (Tc)
10V
5V @ 100µA
34nC @ 10V
1050pF @ 100V
±30V
-
150W (Tc)
2.4 Ohm @ 2.5A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220
TO-220-3
STP315N10F7
STMicroelectronics

MOSFET N-CH 100V 180A TO-220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 12800pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 315W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.7 mOhm @ 60A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220
  • Package / Case: TO-220-3
pacchetto: TO-220-3
Azione20.616
MOSFET (Metal Oxide)
100V
180A (Tc)
10V
4.5V @ 250µA
180nC @ 10V
12800pF @ 25V
±20V
-
315W (Tc)
2.7 mOhm @ 60A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220
TO-220-3
STP45N40DM2AG
STMicroelectronics

MOSFET N-CH 400V 38A

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 400V
  • Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 100V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 250W (Tc)
  • Rds On (Max) @ Id, Vgs: 72 mOhm @ 19A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220
  • Package / Case: TO-220-3
pacchetto: TO-220-3
Azione13.248
MOSFET (Metal Oxide)
400V
38A (Tc)
10V
5V @ 250µA
56nC @ 10V
2600pF @ 100V
±25V
-
250W (Tc)
72 mOhm @ 19A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220
TO-220-3