Immagine |
Numero di parte |
Produttore |
Descrizione |
pacchetto |
Azione |
Quantità |
Current - Collector (Ic) (Max) | Voltage - Collector Emitter Breakdown (Max) | Vce Saturation (Max) @ Ib, Ic | Current - Collector Cutoff (Max) | DC Current Gain (hFE) (Min) @ Ic, Vce | Power - Max | Frequency - Transition | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage |
TRANS NPN 800MA 120V TO226-3
|
pacchetto: TO-226-3, TO-92-3 Long Body |
Azione2.816 |
|
800mA | 120V | 1V @ 50mA, 500mA | 100nA (ICBO) | 80 @ 100mA, 5V | 900mW | 120MHz | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | TO-92MOD |
||
Toshiba Semiconductor and Storage |
TRANS NPN 800MA 120V TO226-3
|
pacchetto: TO-226-3, TO-92-3 Long Body |
Azione2.896 |
|
800mA | 120V | 1V @ 50mA, 500mA | 100nA (ICBO) | 80 @ 100mA, 5V | 900mW | 120MHz | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | TO-92MOD |
||
Toshiba Semiconductor and Storage |
TRANS NPN 800MA 120V TO226-3
|
pacchetto: TO-226-3, TO-92-3 Long Body |
Azione2.864 |
|
800mA | 120V | 1V @ 50mA, 500mA | 100nA (ICBO) | 80 @ 100mA, 5V | 900mW | 120MHz | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | TO-92MOD |
||
Toshiba Semiconductor and Storage |
TRANS NPN 800MA 120V TO226-3
|
pacchetto: TO-226-3, TO-92-3 Long Body |
Azione3.312 |
|
800mA | 120V | 1V @ 50mA, 500mA | 100nA (ICBO) | 80 @ 100mA, 5V | 900mW | 120MHz | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | TO-92MOD |
||
Toshiba Semiconductor and Storage |
TRANS NPN 800MA 120V TO226-3
|
pacchetto: TO-226-3, TO-92-3 Long Body |
Azione6.288 |
|
800mA | 120V | 1V @ 50mA, 500mA | 100nA (ICBO) | 80 @ 100mA, 5V | 900mW | 120MHz | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | TO-92MOD |
||
Toshiba Semiconductor and Storage |
TRANS NPN 800MA 120V TO226-3
|
pacchetto: TO-226-3, TO-92-3 Long Body |
Azione7.472 |
|
800mA | 120V | 1V @ 50mA, 500mA | 100nA (ICBO) | 80 @ 100mA, 5V | 900mW | 120MHz | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | TO-92MOD |
||
Toshiba Semiconductor and Storage |
TRANS NPN 800MA 120V TO226-3
|
pacchetto: TO-226-3, TO-92-3 Long Body |
Azione3.360 |
|
800mA | 120V | 1V @ 50mA, 500mA | 100nA (ICBO) | 80 @ 100mA, 5V | 900mW | 120MHz | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | TO-92MOD |
||
Toshiba Semiconductor and Storage |
TRANS NPN 800MA 120V TO226-3
|
pacchetto: TO-226-3, TO-92-3 Long Body |
Azione3.712 |
|
800mA | 120V | 1V @ 50mA, 500mA | 100nA (ICBO) | 80 @ 100mA, 5V | 900mW | 120MHz | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | TO-92MOD |
||
Toshiba Semiconductor and Storage |
TRANS NPN 800MA 120V TO226-3
|
pacchetto: TO-226-3, TO-92-3 Long Body |
Azione2.784 |
|
800mA | 120V | 1V @ 50mA, 500mA | 100nA (ICBO) | 80 @ 100mA, 5V | 900mW | 120MHz | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | TO-92MOD |
||
Toshiba Semiconductor and Storage |
TRANS NPN 800MA 120V TO226-3
|
pacchetto: TO-226-3, TO-92-3 Long Body |
Azione5.680 |
|
800mA | 120V | 1V @ 50mA, 500mA | 100nA (ICBO) | 80 @ 100mA, 5V | 900mW | 120MHz | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | TO-92MOD |
||
Toshiba Semiconductor and Storage |
TRANS NPN 800MA 120V TO226-3
|
pacchetto: TO-226-3, TO-92-3 Long Body |
Azione3.360 |
|
800mA | 120V | 1V @ 50mA, 500mA | 100nA (ICBO) | 80 @ 100mA, 5V | 900mW | 120MHz | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | TO-92MOD |
||
Toshiba Semiconductor and Storage |
TRANS NPN 800MA 120V TO226-3
|
pacchetto: TO-226-3, TO-92-3 Long Body |
Azione7.760 |
|
800mA | 120V | 1V @ 50mA, 500mA | 100nA (ICBO) | 80 @ 100mA, 5V | 900mW | 120MHz | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | TO-92MOD |
||
Toshiba Semiconductor and Storage |
TRANS NPN 800MA 120V TO226-3
|
pacchetto: TO-226-3, TO-92-3 Long Body |
Azione5.792 |
|
800mA | 120V | 1V @ 50mA, 500mA | 100nA (ICBO) | 80 @ 100mA, 5V | 900mW | 120MHz | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | TO-92MOD |
||
Toshiba Semiconductor and Storage |
TRANS NPN 800MA 120V TO226-3
|
pacchetto: TO-226-3, TO-92-3 Long Body |
Azione4.640 |
|
800mA | 120V | 1V @ 50mA, 500mA | 100nA (ICBO) | 80 @ 100mA, 5V | 900mW | 120MHz | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | TO-92MOD |
||
Toshiba Semiconductor and Storage |
TRANS NPN 800MA 120V TO226-3
|
pacchetto: TO-226-3, TO-92-3 Long Body |
Azione2.752 |
|
800mA | 120V | 1V @ 50mA, 500mA | 100nA (ICBO) | 80 @ 100mA, 5V | 900mW | 120MHz | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | TO-92MOD |
||
Toshiba Semiconductor and Storage |
TRANS NPN 800MA 120V TO226-3
|
pacchetto: TO-226-3, TO-92-3 Long Body |
Azione7.328 |
|
800mA | 120V | 1V @ 50mA, 500mA | 100nA (ICBO) | 80 @ 100mA, 5V | 900mW | 120MHz | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | TO-92MOD |
||
Toshiba Semiconductor and Storage |
TRANS NPN 800MA 120V TO226-3
|
pacchetto: TO-226-3, TO-92-3 Long Body |
Azione5.120 |
|
800mA | 120V | 1V @ 50mA, 500mA | 100nA (ICBO) | 80 @ 100mA, 5V | 900mW | 120MHz | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | TO-92MOD |
||
Toshiba Semiconductor and Storage |
TRANS NPN 800MA 120V TO226-3
|
pacchetto: TO-226-3, TO-92-3 Long Body |
Azione3.232 |
|
800mA | 120V | 1V @ 50mA, 500mA | 100nA (ICBO) | 80 @ 100mA, 5V | 900mW | 120MHz | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | TO-92MOD |
||
Toshiba Semiconductor and Storage |
TRANS NPN 50MA 150V TO226-3
|
pacchetto: TO-226-3, TO-92-3 Long Body |
Azione7.808 |
|
50mA | 150V | 500mV @ 1mA, 10mA | 100nA (ICBO) | 70 @ 10mA, 5V | 800mW | 120MHz | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | TO-92MOD |
||
Toshiba Semiconductor and Storage |
TRANS NPN 50MA 150V TO226-3
|
pacchetto: TO-226-3, TO-92-3 Long Body |
Azione5.840 |
|
50mA | 150V | 500mV @ 1mA, 10mA | 100nA (ICBO) | 70 @ 10mA, 5V | 800mW | 120MHz | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | TO-92MOD |
||
Toshiba Semiconductor and Storage |
TRANS NPN 50MA 150V TO226-3
|
pacchetto: TO-226-3, TO-92-3 Long Body |
Azione6.944 |
|
50mA | 150V | 500mV @ 1mA, 10mA | 100nA (ICBO) | 70 @ 10mA, 5V | 800mW | 120MHz | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | TO-92MOD |
||
Toshiba Semiconductor and Storage |
TRANS NPN 50MA 150V TO226-3
|
pacchetto: TO-226-3, TO-92-3 Long Body |
Azione4.400 |
|
50mA | 150V | 500mV @ 1mA, 10mA | 100nA (ICBO) | 70 @ 10mA, 5V | 800mW | 120MHz | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | TO-92MOD |
||
Toshiba Semiconductor and Storage |
TRANS NPN 50MA 150V TO226-3
|
pacchetto: TO-226-3, TO-92-3 Long Body |
Azione6.336 |
|
50mA | 150V | 500mV @ 1mA, 10mA | 100nA (ICBO) | 70 @ 10mA, 5V | 800mW | 120MHz | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | TO-92MOD |
||
Toshiba Semiconductor and Storage |
TRANS NPN 50MA 150V TO226-3
|
pacchetto: TO-226-3, TO-92-3 Long Body |
Azione7.408 |
|
50mA | 150V | 500mV @ 1mA, 10mA | 100nA (ICBO) | 70 @ 10mA, 5V | 800mW | 120MHz | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | TO-92MOD |
||
Toshiba Semiconductor and Storage |
TRANS NPN 50MA 150V TO226-3
|
pacchetto: TO-226-3, TO-92-3 Long Body |
Azione7.152 |
|
50mA | 150V | 500mV @ 1mA, 10mA | 100nA (ICBO) | 70 @ 10mA, 5V | 800mW | 120MHz | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | TO-92MOD |
||
Toshiba Semiconductor and Storage |
TRANS NPN 50MA 150V TO226-3
|
pacchetto: TO-226-3, TO-92-3 Long Body |
Azione7.872 |
|
50mA | 150V | 500mV @ 1mA, 10mA | 100nA (ICBO) | 70 @ 10mA, 5V | 800mW | 120MHz | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | TO-92MOD |
||
Toshiba Semiconductor and Storage |
TRANS NPN 50MA 150V TO226-3
|
pacchetto: TO-226-3, TO-92-3 Long Body |
Azione2.192 |
|
50mA | 150V | 500mV @ 1mA, 10mA | 100nA (ICBO) | 70 @ 10mA, 5V | 800mW | 120MHz | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | TO-92MOD |
||
Toshiba Semiconductor and Storage |
TRANS NPN 50MA 150V TO226-3
|
pacchetto: TO-226-3, TO-92-3 Long Body |
Azione2.512 |
|
50mA | 150V | 500mV @ 1mA, 10mA | 100nA (ICBO) | 70 @ 10mA, 5V | 800mW | 120MHz | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | TO-92MOD |
||
Toshiba Semiconductor and Storage |
TRANS NPN 50MA 150V TO226-3
|
pacchetto: TO-226-3, TO-92-3 Long Body |
Azione2.656 |
|
50mA | 150V | 500mV @ 1mA, 10mA | 100nA (ICBO) | 70 @ 10mA, 5V | 800mW | 120MHz | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | TO-92MOD |
||
Toshiba Semiconductor and Storage |
TRANS NPN 50MA 150V TO226-3
|
pacchetto: TO-226-3, TO-92-3 Long Body |
Azione4.480 |
|
50mA | 150V | 500mV @ 1mA, 10mA | 100nA (ICBO) | 70 @ 10mA, 5V | 800mW | 120MHz | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | TO-92MOD |