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Toshiba Semiconductor and Storage |
MOSFET N-CH 75V 50A TO-220AB
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 75V
- Current - Continuous Drain (Id) @ 25°C: 50A
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 12 mOhm @ 25A, 10V
- Operating Temperature: -
- Mounting Type: Through Hole
- Supplier Device Package: TO-220-3
- Package / Case: TO-220-3
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pacchetto: TO-220-3 |
Azione5.408 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 550V 10A TO-220SIS
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 550V
- Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 45W (Tc)
- Rds On (Max) @ Id, Vgs: 720 mOhm @ 5A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220SIS
- Package / Case: TO-220-3 Full Pack
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pacchetto: TO-220-3 Full Pack |
Azione2.736 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 60V 0.2A S-MINI
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 17pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 200mW (Ta)
- Rds On (Max) @ Id, Vgs: 2.1 Ohm @ 500mA, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SC-59
- Package / Case: TO-236-3, SC-59, SOT-23-3
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pacchetto: TO-236-3, SC-59, SOT-23-3 |
Azione166.200 |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 12V 14A UDFN6B
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 12V
- Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: 1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 47nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 3350pF @ 6V
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 9.1 mOhm @ 4A, 8V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 6-UDFNB (2x2)
- Package / Case: 6-WDFN Exposed Pad
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pacchetto: 6-WDFN Exposed Pad |
Azione3.056 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 100V 100A TO-220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 8800pF @ 50V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 45W (Tc)
- Rds On (Max) @ Id, Vgs: 3.8 mOhm @ 50A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220SIS
- Package / Case: TO-220-3 Full Pack, Isolated Tab
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pacchetto: TO-220-3 Full Pack, Isolated Tab |
Azione6.216 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 13A TO220SIS
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2300pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 50W (Tc)
- Rds On (Max) @ Id, Vgs: 430 mOhm @ 6.5A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220SIS
- Package / Case: TO-220-3 Full Pack
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pacchetto: TO-220-3 Full Pack |
Azione24.654 |
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Toshiba Semiconductor and Storage |
MOSFET ARRAY 2N-CH 20V 250MA US6
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate, 1.5V Drive
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
- Rds On (Max) @ Id, Vgs: 2.2 Ohm @ 100mA, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 12pF @ 10V
- Power - Max: 300mW
- Operating Temperature: 150°C
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: US6
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pacchetto: 6-TSSOP, SC-88, SOT-363 |
Azione25.446 |
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Toshiba Semiconductor and Storage |
TRANS PNP 2A 50V TO226-3
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 2A
- Voltage - Collector Emitter Breakdown (Max): 50V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
- Current - Collector Cutoff (Max): 1µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
- Power - Max: 900mW
- Frequency - Transition: 100MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 Long Body
- Supplier Device Package: TO-92MOD
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pacchetto: TO-226-3, TO-92-3 Long Body |
Azione5.472 |
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Toshiba Semiconductor and Storage |
TRANS PNP 50V 0.15A S-MINI
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 150mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
- Power - Max: 150mW
- Frequency - Transition: 80MHz
- Operating Temperature: 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: S-Mini
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pacchetto: TO-236-3, SC-59, SOT-23-3 |
Azione26.916 |
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Toshiba Semiconductor and Storage |
TRANS NPN 50V 0.15A SSM
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 150mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 2mA, 6V
- Power - Max: 100mW
- Frequency - Transition: 80MHz
- Operating Temperature: 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-75, SOT-416
- Supplier Device Package: SSM
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pacchetto: SC-75, SOT-416 |
Azione25.926 |
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Toshiba Semiconductor and Storage |
TRANS PREBIAS NPN 0.1W SSM
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 47k
- Resistor - Emitter Base (R2) (Ohms): 22k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 250MHz
- Power - Max: 100mW
- Mounting Type: Surface Mount
- Package / Case: SC-75, SOT-416
- Supplier Device Package: SSM
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pacchetto: SC-75, SOT-416 |
Azione7.280 |
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Toshiba Semiconductor and Storage |
TRANS PREBIAS PNP 0.1W CST3
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 80mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 47k
- Resistor - Emitter Base (R2) (Ohms): 22k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: -
- Power - Max: 100mW
- Mounting Type: Surface Mount
- Package / Case: SC-101, SOT-883
- Supplier Device Package: CST3
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pacchetto: SC-101, SOT-883 |
Azione5.216 |
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Toshiba Semiconductor and Storage |
TRANS 2NPN PREBIAS 0.2W US6
- Transistor Type: 2 NPN - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 2.2k
- Resistor - Emitter Base (R2) (Ohms): 47k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 250MHz
- Power - Max: 200mW
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: US6
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pacchetto: 6-TSSOP, SC-88, SOT-363 |
Azione7.584 |
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Toshiba Semiconductor and Storage |
TRANS NPN/PNP PREBIAS 0.2W US6
- Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 4.7k
- Resistor - Emitter Base (R2) (Ohms): 47k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 200MHz
- Power - Max: 200mW
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: US6
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pacchetto: 6-TSSOP, SC-88, SOT-363 |
Azione3.312 |
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Toshiba Semiconductor and Storage |
DIODE GEN PURP 600V 2A MFLAT
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 2A
- Voltage - Forward (Vf) (Max) @ If: 2V @ 2A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 100ns
- Current - Reverse Leakage @ Vr: 50µA @ 600V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: SOD-128
- Supplier Device Package: M-FLAT (2.4x3.8)
- Operating Temperature - Junction: -40°C ~ 150°C
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pacchetto: SOD-128 |
Azione2.256 |
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Toshiba Semiconductor and Storage |
DIODE GEN PURP 200V 1A MFLAT
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 980mV @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 35ns
- Current - Reverse Leakage @ Vr: 10µA @ 200V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: SOD-128
- Supplier Device Package: M-FLAT (2.4x3.8)
- Operating Temperature - Junction: -40°C ~ 150°C
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pacchetto: SOD-128 |
Azione4.464 |
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Toshiba Semiconductor and Storage |
DIODE SCHOTKY GP 40V 100MA SC61B
- Diode Configuration: 2 Independent
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 40V
- Current - Average Rectified (Io) (per Diode): 100mA
- Voltage - Forward (Vf) (Max) @ If: 600mV @ 100mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 5µA @ 40V
- Operating Temperature - Junction: 125°C (Max)
- Mounting Type: Surface Mount
- Package / Case: SC-61AA
- Supplier Device Package: SC-61B
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pacchetto: SC-61AA |
Azione21.936 |
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Toshiba Semiconductor and Storage |
IC EEPROM 1GBIT 25NS 63TFBGA
- Memory Type: Non-Volatile
- Memory Format: EEPROM
- Technology: EEPROM - NAND
- Memory Size: 1Gb (128M x 8)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 25ns
- Access Time: 25ns
- Voltage - Supply: 2.7 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 63-VFBGA
- Supplier Device Package: 63-TFBGA (9x11)
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pacchetto: 63-VFBGA |
Azione7.168 |
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Toshiba Semiconductor and Storage |
IC MULTIPLEXER QUAD 2-CH 16TSSOP
- Type: Multiplexer
- Circuit: 4 x 2:1
- Independent Circuits: 1
- Current - Output High, Low: 4mA, 4mA
- Voltage Supply Source: Single Supply
- Voltage - Supply: 2 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Surface Mount
- Package / Case: 16-TSSOP (0.173", 4.40mm Width)
- Supplier Device Package: 16-TSSOP
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pacchetto: 16-TSSOP (0.173", 4.40mm Width) |
Azione4.976 |
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Toshiba Semiconductor and Storage |
IC INVERTER HEX SCHMITT 14VSSOP
- Logic Type: Inverter
- Number of Circuits: 6
- Number of Inputs: 6
- Features: Schmitt Trigger
- Voltage - Supply: 1.65 V ~ 3.6 V
- Current - Quiescent (Max): 10µA
- Current - Output High, Low: 24mA, 24mA
- Logic Level - Low: 0.3 V ~ 0.6 V
- Logic Level - High: 1.35 V ~ 2.2 V
- Max Propagation Delay @ V, Max CL: 6.5ns @ 3.3V, 50pF
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Surface Mount
- Supplier Device Package: 14-VSSOP, US14
- Package / Case: 14-VFSOP (0.118", 3.00mm Width)
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pacchetto: 14-VFSOP (0.118", 3.00mm Width) |
Azione23.340 |
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Toshiba Semiconductor and Storage |
IC D-TYPE POS TRG SNGL 20TSSOP
- Function: Standard
- Type: D-Type
- Output Type: Tri-State, Non-Inverted
- Number of Elements: 1
- Number of Bits per Element: 8
- Clock Frequency: 120MHz
- Max Propagation Delay @ V, Max CL: 10.1ns @ 5V, 50pF
- Trigger Type: Positive Edge
- Current - Output High, Low: 8mA, 8mA
- Voltage - Supply: 2 V ~ 5.5 V
- Current - Quiescent (Iq): 4µA
- Input Capacitance: 4pF
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 20-TSSOP (0.173", 4.40mm Width)
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pacchetto: 20-TSSOP (0.173", 4.40mm Width) |
Azione4.480 |
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Toshiba Semiconductor and Storage |
LED WHITE 65MW CSP 0603
- Color: White
- Configuration: -
- Lens Color: -
- Lens Transparency: -
- Millicandela Rating: 220mcd
- Lens Style/Size: Rectangle with Flat Top, 0.35mm x 0.65mm
- Voltage - Forward (Vf) (Typ): 2.6V
- Current - Test: 5mA
- Viewing Angle: -
- Mounting Type: Surface Mount
- Wavelength - Dominant: -
- Wavelength - Peak: -
- Features: -
- Package / Case: 0201 (0603 Metric)
- Supplier Device Package: 0603
- Size / Dimension: 0.65mm L x 0.35mm W
- Height (Max): 0.39mm
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pacchetto: 0201 (0603 Metric) |
Azione2.484 |
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Toshiba Semiconductor and Storage |
TVS DIODE 28VWM 40VC USC
- Type: Steering (Rail to Rail)
- Unidirectional Channels: 1
- Bidirectional Channels: -
- Voltage - Reverse Standoff (Typ): 28V
- Voltage - Breakdown (Min): 32V
- Voltage - Clamping (Max) @ Ipp: 40V
- Current - Peak Pulse (10/1000µs): 1A (8/20µs)
- Power - Peak Pulse: 150W
- Power Line Protection: No
- Applications: Automotive
- Capacitance @ Frequency: 6.5pF @ 1MHz
- Operating Temperature: -
- Mounting Type: Surface Mount
- Package / Case: SC-76, SOD-323
- Supplier Device Package: USC
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pacchetto: SC-76, SOD-323 |
Azione7.236 |
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Toshiba Semiconductor and Storage |
TVS DIODE 5VWM 20VC
- Type: Zener
- Unidirectional Channels: 1
- Bidirectional Channels: -
- Voltage - Reverse Standoff (Typ): 5V (Max)
- Voltage - Breakdown (Min): 6V
- Voltage - Clamping (Max) @ Ipp: 20V
- Current - Peak Pulse (10/1000µs): 3A (8/20µs)
- Power - Peak Pulse: 60W
- Power Line Protection: No
- Applications: General Purpose
- Capacitance @ Frequency: 0.5pF @ 1MHz
- Operating Temperature: -
- Mounting Type: Surface Mount
- Package / Case: 0201 (0603 Metric)
- Supplier Device Package: SL2
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pacchetto: 0201 (0603 Metric) |
Azione217.794 |
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Toshiba Semiconductor and Storage |
PHOTORELAY SPST-NO 120MA 40V
- Circuit: SPST-NO (1 Form A)
- Output Type: AC, DC
- On-State Resistance (Max): 14 Ohm
- Load Current: 120mA
- Voltage - Input: 1.27VDC
- Voltage - Load: 0 ~ 40 V
- Mounting Type: Surface Mount
- Termination Style: SMD (SMT) Tab
- Package / Case: 4-SMD (0.096", 2.45mm)
- Supplier Device Package: 4-VSON
- Relay Type: Relay
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pacchetto: 4-SMD (0.096", 2.45mm) |
Azione29.136 |
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Toshiba Semiconductor and Storage |
OPTOISOLATOR 3.75KV TRANS 4-SO
- Number of Channels: 1
- Voltage - Isolation: 3750Vrms
- Current Transfer Ratio (Min): 100% @ 5mA
- Current Transfer Ratio (Max): 200% @ 5mA
- Turn On / Turn Off Time (Typ): 3µs, 3µs
- Rise / Fall Time (Typ): 2µs, 3µs
- Input Type: DC
- Output Type: Transistor
- Voltage - Output (Max): 80V
- Current - Output / Channel: 50mA
- Voltage - Forward (Vf) (Typ): 1.25V
- Current - DC Forward (If) (Max): 50mA
- Vce Saturation (Max): 300mV
- Operating Temperature: -55°C ~ 110°C
- Mounting Type: Surface Mount
- Package / Case: 4-SOIC (0.179", 4.55mm)
- Supplier Device Package: 4-SO
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pacchetto: 4-SOIC (0.179", 4.55mm) |
Azione5.598 |
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Toshiba Semiconductor and Storage |
OPTOISOLTR 5KV 4CH TRANS 16-DIP
- Number of Channels: 4
- Voltage - Isolation: 5000Vrms
- Current Transfer Ratio (Min): 100% @ 5mA
- Current Transfer Ratio (Max): 600% @ 5mA
- Turn On / Turn Off Time (Typ): 3µs, 3µs
- Rise / Fall Time (Typ): 2µs, 3µs
- Input Type: AC, DC
- Output Type: Transistor
- Voltage - Output (Max): 55V
- Current - Output / Channel: 50mA
- Voltage - Forward (Vf) (Typ): 1.15V
- Current - DC Forward (If) (Max): 50mA
- Vce Saturation (Max): 400mV
- Operating Temperature: -55°C ~ 100°C
- Mounting Type: Through Hole
- Package / Case: 16-DIP (0.300", 7.62mm)
- Supplier Device Package: 16-DIP
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pacchetto: 16-DIP (0.300", 7.62mm) |
Azione55.014 |
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Toshiba Semiconductor and Storage |
OPTOISO 5KV GATE DRIVER 6SDIP GW
- Technology: Optical Coupling
- Number of Channels: 1
- Voltage - Isolation: 5000Vrms
- Common Mode Transient Immunity (Min): 10kV/µs
- Propagation Delay tpLH / tpHL (Max): 700ns, 700ns
- Pulse Width Distortion (Max): -
- Rise / Fall Time (Typ): 50ns, 50ns
- Current - Output High, Low: 400mA, 400mA
- Current - Peak Output: 600mA
- Voltage - Forward (Vf) (Typ): 1.55V
- Current - DC Forward (If) (Max): 20mA
- Voltage - Supply: 10 V ~ 30 V
- Operating Temperature: -40°C ~ 100°C
- Mounting Type: Surface Mount
- Package / Case: 6-SOIC (0.268", 6.80mm Width)
- Supplier Device Package: 6-SDIP Gull Wing
- Approvals: cUL, UL
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pacchetto: 6-SOIC (0.268", 6.80mm Width) |
Azione3.492 |
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Toshiba Semiconductor and Storage |
OPTOISO 3.75KV GATE DRVR 8DIP
- Technology: Optical Coupling
- Number of Channels: 1
- Voltage - Isolation: 3750Vrms
- Common Mode Transient Immunity (Min): 20kV/µs
- Propagation Delay tpLH / tpHL (Max): 200ns, 200ns
- Pulse Width Distortion (Max): 50ns
- Rise / Fall Time (Typ): 15ns, 8ns
- Current - Output High, Low: 2A, 2A
- Current - Peak Output: 2.5A
- Voltage - Forward (Vf) (Typ): 1.55V
- Current - DC Forward (If) (Max): 20mA
- Voltage - Supply: 15 V ~ 30 V
- Operating Temperature: -40°C ~ 125°C
- Mounting Type: Through Hole
- Package / Case: 8-DIP (0.300", 7.62mm)
- Supplier Device Package: 8-DIP
- Approvals: CSA, cUL, UL, VDE
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pacchetto: 8-DIP (0.300", 7.62mm) |
Azione5.724 |
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Toshiba Semiconductor and Storage |
X34 PB-F 8-BIT SHIFT REGISTER (P
- Logic Type: Shift Register
- Output Type: Push-Pull
- Number of Elements: 1
- Number of Bits per Element: 8
- Function: Universal
- Voltage - Supply: 2V ~ 5.5V
- Operating Temperature: -40°C ~ 125°C
- Mounting Type: Surface Mount
- Package / Case: 16-TSSOP (0.173", 4.40mm Width)
- Supplier Device Package: 16-TSSOPB
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pacchetto: 16-TSSOP (0.173", 4.40mm Width) |
Azione24.786 |
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