Immagine |
Numero di parte |
Produttore |
Descrizione |
pacchetto |
Azione |
Quantità |
Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Mounting Type | Package / Case | Supplier Device Package | Operating Temperature - Junction |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 400V 1.4A SOD57
|
pacchetto: SOD-57, Axial |
Azione4.704 |
|
400V | 1.4A | 1.3V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 200ns | 5µA @ 400V | - | Through Hole | SOD-57, Axial | SOD-57 | -55°C ~ 175°C |
||
Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 600V 1.5A SOD57
|
pacchetto: SOD-57, Axial |
Azione600.000 |
|
600V | 1.5A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 4µs | 1µA @ 600V | - | Through Hole | SOD-57, Axial | SOD-57 | -55°C ~ 175°C |
||
Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 1.2KV 2A SOD57
|
pacchetto: SOD-57, Axial |
Azione600.000 |
|
1200V | 2A | 1.6V @ 3A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 3µA @ 1200V | - | Through Hole | SOD-57, Axial | SOD-57 | 140°C (Max) |
||
Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 1.5KV 2A SOD57
|
pacchetto: SOD-57, Axial |
Azione49.848 |
|
1500V | 2A | 1.6V @ 3A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 3µA @ 1200V | - | Through Hole | SOD-57, Axial | SOD-57 | 140°C (Max) |
||
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.4KV 800MA SOD57
|
pacchetto: SOD-57, Axial |
Azione2.192 |
|
1400V | 800mA | 1.25V @ 400mA | Fast Recovery =< 500ns, > 200mA (Io) | 400ns | 2µA @ 1400V | - | Through Hole | SOD-57, Axial | SOD-57 | -55°C ~ 150°C |
||
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 45V 3.8A DO214AB
|
pacchetto: DO-214AB, SMC |
Azione48.000 |
|
45V | 3.8A (DC) | 430mV @ 3.5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1.6mA @ 45V | 1068pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB, (SMC) | -40°C ~ 150°C |
||
Vishay Semiconductor Diodes Division |
DIODE GP 400V 5A DO214AB
|
pacchetto: DO-214AB, SMC |
Azione2.576 |
|
400V | 5A | 1.15V @ 5A | Standard Recovery >500ns, > 200mA (Io) | 2.5µs | 10µA @ 400V | 40pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB, (SMC) | -55°C ~ 150°C |
||
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1KV 4A TO277A
|
pacchetto: TO-277, 3-PowerDFN |
Azione7.424 |
|
1000V | 4A | 1.1V @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 2.5µs | 10µA @ 1000V | 30pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 150°C |
||
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 800V 4A TO277A
|
pacchetto: TO-277, 3-PowerDFN |
Azione4.384 |
|
800V | 4A | 1.1V @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 2.5µs | 10µA @ 800V | 30pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 150°C |
||
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 4A TO277A
|
pacchetto: TO-277, 3-PowerDFN |
Azione6.624 |
|
600V | 4A | 1.1V @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 2.5µs | 10µA @ 600V | 30pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 150°C |
||
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 4A TO277A
|
pacchetto: TO-277, 3-PowerDFN |
Azione3.088 |
|
400V | 4A | 1.1V @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 2.5µs | 10µA @ 400V | 30pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 150°C |
||
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 4A TO277A
|
pacchetto: TO-277, 3-PowerDFN |
Azione3.200 |
|
200V | 4A | 1.1V @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 2.5µs | 10µA @ 200V | 30pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 150°C |
||
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 4A TO277A
|
pacchetto: TO-277, 3-PowerDFN |
Azione2.512 |
|
100V | 4A | 1.1V @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 2.5µs | 10µA @ 100V | 30pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -65°C ~ 175°C |
||
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1KV 5A DO214AB
|
pacchetto: DO-214AB, SMC |
Azione4.960 |
|
1000V | 5A | 1.15V @ 5A | Standard Recovery >500ns, > 200mA (Io) | 2.5µs | 10µA @ 1000V | 40pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB, (SMC) | -55°C ~ 150°C |
||
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 800V 5A DO214AB
|
pacchetto: DO-214AB, SMC |
Azione6.144 |
|
800V | 5A | 1.15V @ 5A | Standard Recovery >500ns, > 200mA (Io) | 2.5µs | 10µA @ 800V | 40pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB, (SMC) | -55°C ~ 150°C |
||
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 5A DO214AB
|
pacchetto: DO-214AB, SMC |
Azione7.056 |
|
600V | 5A | 1.15V @ 5A | Standard Recovery >500ns, > 200mA (Io) | 2.5µs | 10µA @ 600V | 40pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB, (SMC) | -55°C ~ 150°C |
||
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 5A DO214AB
|
pacchetto: DO-214AB, SMC |
Azione2.800 |
|
400V | 5A | 1.15V @ 5A | Standard Recovery >500ns, > 200mA (Io) | 2.5µs | 10µA @ 400V | 40pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB, (SMC) | -55°C ~ 150°C |
||
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 5A DO214AB
|
pacchetto: DO-214AB, SMC |
Azione6.176 |
|
200V | 5A | 1.15V @ 5A | Standard Recovery >500ns, > 200mA (Io) | 2.5µs | 10µA @ 200V | 40pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB, (SMC) | -55°C ~ 150°C |
||
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 5A DO214AB
|
pacchetto: DO-214AB, SMC |
Azione5.728 |
|
100V | 5A | 1.15V @ 5A | Standard Recovery >500ns, > 200mA (Io) | 2.5µs | 10µA @ 100V | 40pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB, (SMC) | -55°C ~ 150°C |
||
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 50V 5A DO214AB
|
pacchetto: DO-214AB, SMC |
Azione7.472 |
|
50V | 5A | 1.15V @ 5A | Standard Recovery >500ns, > 200mA (Io) | 2.5µs | 10µA @ 50V | 40pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB, (SMC) | -55°C ~ 150°C |
||
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 3A DO221AC
|
pacchetto: DO-221AC, SMA Flat Leads |
Azione3.216 |
|
200V | 3A | 930mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 18ns | 2µA @ 200V | - | Surface Mount | DO-221AC, SMA Flat Leads | DO-221AC (SlimSMA) | -65°C ~ 175°C |
||
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 150V 4A DO201AD
|
pacchetto: DO-201AD, Axial |
Azione4.720 |
|
150V | 4A | 950mV @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 5µA @ 150V | 20pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
||
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 4A DO201AD
|
pacchetto: DO-201AD, Axial |
Azione2.112 |
|
100V | 4A | 950mV @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 5µA @ 100V | 20pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
||
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 50V 4A DO201AD
|
pacchetto: DO-201AD, Axial |
Azione3.392 |
|
50V | 4A | 950mV @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 5µA @ 50V | 20pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
||
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 50V 3.5A DO201AD
|
pacchetto: DO-201AD, Axial |
Azione2.720 |
|
50V | 3.5A | 1.1V @ 3.5A | Fast Recovery =< 500ns, > 200mA (Io) | 20ns | 5µA @ 50V | 20pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
||
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 150V 3.5A DO201AD
|
pacchetto: DO-201AD, Axial |
Azione3.744 |
|
150V | 3.5A | 1.1V @ 3.5A | Fast Recovery =< 500ns, > 200mA (Io) | 20ns | 5µA @ 150V | 20pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
||
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 3.5A DO201AD
|
pacchetto: DO-201AD, Axial |
Azione5.632 |
|
100V | 3.5A | 1.1V @ 3.5A | Fast Recovery =< 500ns, > 200mA (Io) | 20ns | 5µA @ 100V | 20pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
||
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 4A DO201AD
|
pacchetto: DO-201AD, Axial |
Azione4.080 |
|
200V | 4A | 950mV @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 5µA @ 200V | 20pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |