Immagine |
Numero di parte |
Produttore |
Descrizione |
pacchetto |
Azione |
Quantità |
Configuration | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Power - Max | Vce(on) (Max) @ Vge, Ic | Current - Collector Cutoff (Max) | Input Capacitance (Cies) @ Vce | Input | NTC Thermistor | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay Semiconductor Diodes Division |
IGBT 1200V 150A 543W
|
pacchetto: INT-A-Pak |
Azione3.984 |
|
Half Bridge | 1200V | 150A | 543W | 2.35V @ 15V, 75A | 5mA | 5.52nF @ 25V | Standard | No | 150°C (TJ) | Chassis Mount | INT-A-Pak | INT-A-PAK |
||
Vishay Semiconductor Diodes Division |
IGBT 600V 220A 780W
|
pacchetto: INT-A-Pak |
Azione4.256 |
|
Half Bridge | 600V | 220A | 780W | 1.28V @ 15V, 100A | 1mA | 16.25nF @ 30V | Standard | No | -40°C ~ 150°C (TJ) | Chassis Mount | INT-A-Pak | INT-A-PAK |
||
Vishay Semiconductor Diodes Division |
IGBT 600V 480A 830W
|
pacchetto: INT-A-Pak |
Azione7.296 |
|
Half Bridge | 600V | 480A | 830W | 1.21V @ 15V, 200A | 1mA | 32.5nF @ 30V | Standard | No | -40°C ~ 150°C (TJ) | Chassis Mount | INT-A-Pak | INT-A-PAK |
||
Vishay Semiconductor Diodes Division |
IGBT 1200V 150A 446W INT-A-PAK
|
pacchetto: INT-A-PAK (3 + 4) |
Azione6.064 |
|
Single | 1200V | 150A | 446W | 2.08V @ 15V, 75A (Typ) | 1mA | 9.45nF @ 30V | Standard | No | -40°C ~ 150°C (TJ) | Chassis Mount | INT-A-PAK (3 + 4) | INT-A-PAK |
||
Vishay Semiconductor Diodes Division |
IGBT 1200V 750A 2344W DIAP
|
pacchetto: Double INT-A-PAK (3 + 8) |
Azione5.232 |
|
Half Bridge | 1200V | 750A | 2344W | 2.35V @ 15V, 400A | 5mA | 51.2nF @ 30V | Standard | No | -40°C ~ 150°C (TJ) | Chassis Mount | Double INT-A-PAK (3 + 8) | Double INT-A-PAK |
||
Vishay Semiconductor Diodes Division |
IGBT 1200V 600A 2119W DIAP
|
pacchetto: Double INT-A-PAK (3 + 8) |
Azione3.408 |
|
Half Bridge | 1200V | 600A | 2119W | 2.15V @ 15V, 400A | 5mA | 28.8nF @ 25V | Standard | No | 150°C (TJ) | Chassis Mount | Double INT-A-PAK (3 + 8) | Double INT-A-PAK |
||
Vishay Semiconductor Diodes Division |
IGBT 1200V 180A 652W INT-A-PAK
|
pacchetto: INT-A-PAK (3 + 4) |
Azione7.952 |
|
Half Bridge | 1200V | 180A | 652W | 2.35V @ 15V, 100A | 5mA | 12.8nF @ 30V | Standard | No | 175°C (TJ) | Chassis Mount | INT-A-PAK (3 + 4) | INT-A-PAK |
||
Vishay Semiconductor Diodes Division |
IGBT 1200V 134A 463W SOT-227
|
pacchetto: SOT-227-4, miniBLOC |
Azione6.880 |
|
Single | 1200V | 134A | 463W | 2.85V @ 15V, 100A | 100µA | - | Standard | No | -40°C ~ 150°C (TJ) | Chassis Mount | SOT-227-4, miniBLOC | SOT-227 |
||
Vishay Semiconductor Diodes Division |
IGBT 1200V 134A 463W SOT-227
|
pacchetto: SOT-227-4, miniBLOC |
Azione3.936 |
|
Single | 1200V | 134A | 463W | 2.85V @ 15V, 100A | 100µA | - | Standard | No | -40°C ~ 150°C (TJ) | Chassis Mount | SOT-227-4, miniBLOC | SOT-227 |