Pagina 10 - Prodotti Vishay Siliconix - Transistor - FET, MOSFET - Array | Heisener Electronics
Contattaci
SalesDept@heisener.com 86-755-83210559-827
Language Translation

* Please refer to the English Version as our Official Version.

Prodotti Vishay Siliconix - Transistor - FET, MOSFET - Array

Record 749
Pagina  10/25
Immagine
Numero di parte
Produttore
Descrizione
pacchetto
Azione
Quantità
FET Feature
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Power - Max
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
hot SI4286DY-T1-GE3
Vishay Siliconix

MOSFET 2N-CH 40V 7A 8SO

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 7A
  • Rds On (Max) @ Id, Vgs: 32.5 mOhm @ 8A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 375pF @ 20V
  • Power - Max: 2.9W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione91.548
Standard
40V
7A
32.5 mOhm @ 8A, 10V
2.5V @ 250µA
10.5nC @ 10V
375pF @ 20V
2.9W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
SQ4940AEY-T1_GE3
Vishay Siliconix

MOSFET 2N-CH 40V 8A 8SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 8A
  • Rds On (Max) @ Id, Vgs: 24 mOhm @ 5.3A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 741pF @ 20V
  • Power - Max: 4W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione3.072
Logic Level Gate
40V
8A
24 mOhm @ 5.3A, 10V
2.5V @ 250µA
43nC @ 10V
741pF @ 20V
4W
-55°C ~ 175°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
hot SI4916DY-T1-E3
Vishay Siliconix

MOSFET 2N-CH 30V 10A 8-SOIC

  • FET Type: 2 N-Channel (Half Bridge)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 10A, 10.5A
  • Rds On (Max) @ Id, Vgs: 18 mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 3.3W, 3.5W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione222.252
Logic Level Gate
30V
10A, 10.5A
18 mOhm @ 10A, 10V
3V @ 250µA
10nC @ 4.5V
-
3.3W, 3.5W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
SQJ570EP-T1_GE3
Vishay Siliconix

MOSFET ARRAY N/P-CH 100V SO8

  • FET Type: N and P-Channel
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 15A (Tc), 9.5A (Tc)
  • Rds On (Max) @ Id, Vgs: 45 mOhm @ 6A, 10V, 146 mOhm @ 6A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V, 15nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 25V, 600pF @ 25V
  • Power - Max: 27W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK? SO-8 Dual
  • Supplier Device Package: PowerPAK? SO-8 Dual
pacchetto: PowerPAK? SO-8 Dual
Azione6.976
Standard
100V
15A (Tc), 9.5A (Tc)
45 mOhm @ 6A, 10V, 146 mOhm @ 6A, 10V
2.5V @ 250µA
20nC @ 10V, 15nC @ 10V
650pF @ 25V, 600pF @ 25V
27W
-55°C ~ 175°C (TJ)
Surface Mount
PowerPAK? SO-8 Dual
PowerPAK? SO-8 Dual
SQJ968EP-T1_GE3
Vishay Siliconix

MOSFET ARRAY 2N-CH 60V SO8

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 23.5A (Tc)
  • Rds On (Max) @ Id, Vgs: 33.6 mOhm @ 4.8A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 18.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 714pF @ 30V
  • Power - Max: 42W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK? SO-8 Dual
  • Supplier Device Package: PowerPAK? SO-8 Dual
pacchetto: PowerPAK? SO-8 Dual
Azione7.824
Standard
60V
23.5A (Tc)
33.6 mOhm @ 4.8A, 10V
2.5V @ 250µA
18.5nC @ 10V
714pF @ 30V
42W (Tc)
-55°C ~ 175°C (TA)
Surface Mount
PowerPAK? SO-8 Dual
PowerPAK? SO-8 Dual
hot SI7904BDN-T1-E3
Vishay Siliconix

MOSFET 2N-CH 20V 6A 1212-8

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 6A
  • Rds On (Max) @ Id, Vgs: 30 mOhm @ 7.1A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 24nC @ 8V
  • Input Capacitance (Ciss) (Max) @ Vds: 860pF @ 10V
  • Power - Max: 17.8W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK? 1212-8 Dual
  • Supplier Device Package: PowerPAK? 1212-8 Dual
pacchetto: PowerPAK? 1212-8 Dual
Azione19.860
Logic Level Gate
20V
6A
30 mOhm @ 7.1A, 4.5V
1V @ 250µA
24nC @ 8V
860pF @ 10V
17.8W
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK? 1212-8 Dual
PowerPAK? 1212-8 Dual
hot SI3900DV-T1-GE3
Vishay Siliconix

MOSFET 2N-CH 20V 2A 6-TSOP

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 2A
  • Rds On (Max) @ Id, Vgs: 125 mOhm @ 2.4A, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 830mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
  • Supplier Device Package: 6-TSOP
pacchetto: SOT-23-6 Thin, TSOT-23-6
Azione410.904
Logic Level Gate
20V
2A
125 mOhm @ 2.4A, 4.5V
1.5V @ 250µA
4nC @ 4.5V
-
830mW
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-6 Thin, TSOT-23-6
6-TSOP
hot SI3552DV-T1-GE3
Vishay Siliconix

MOSFET N/P-CH 30V 6-TSOP

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: 105 mOhm @ 2.5A, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
  • Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 1.15W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
  • Supplier Device Package: 6-TSOP
pacchetto: SOT-23-6 Thin, TSOT-23-6
Azione1.052.244
Logic Level Gate
30V
-
105 mOhm @ 2.5A, 10V
1V @ 250µA (Min)
3.2nC @ 5V
-
1.15W
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-6 Thin, TSOT-23-6
6-TSOP
SI4554DY-T1-GE3
Vishay Siliconix

MOSFET N/P-CH 40V 8A 8SO

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 8A
  • Rds On (Max) @ Id, Vgs: 24 mOhm @ 6.8A, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 690pF @ 20V
  • Power - Max: 3.1W, 3.2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione7.200
Logic Level Gate
40V
8A
24 mOhm @ 6.8A, 10V
2.2V @ 250µA
20nC @ 10V
690pF @ 20V
3.1W, 3.2W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
hot SI6926ADQ-T1-GE3
Vishay Siliconix

MOSFET 2N-CH 20V 4.1A 8-TSSOP

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 4.1A
  • Rds On (Max) @ Id, Vgs: 30 mOhm @ 4.5A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 830mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 8-TSSOP
pacchetto: 8-TSSOP (0.173", 4.40mm Width)
Azione438.120
Logic Level Gate
20V
4.1A
30 mOhm @ 4.5A, 4.5V
1V @ 250µA
10.5nC @ 4.5V
-
830mW
-55°C ~ 150°C (TJ)
Surface Mount
8-TSSOP (0.173", 4.40mm Width)
8-TSSOP
SQJ946EP-T1_GE3
Vishay Siliconix

MOSFET ARRAY 2N-CH 40V SO8

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
  • Rds On (Max) @ Id, Vgs: 33 mOhm @ 7A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 25V
  • Power - Max: 27W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK? SO-8 Dual
  • Supplier Device Package: PowerPAK? SO-8 Dual
pacchetto: PowerPAK? SO-8 Dual
Azione6.688
Standard
40V
15A (Tc)
33 mOhm @ 7A, 10V
2.5V @ 250µA
20nC @ 10V
600pF @ 25V
27W
-55°C ~ 175°C (TJ)
Surface Mount
PowerPAK? SO-8 Dual
PowerPAK? SO-8 Dual
hot SI4210DY-T1-GE3
Vishay Siliconix

MOSFET 2N-CH 30V 6.5A 8-SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 6.5A
  • Rds On (Max) @ Id, Vgs: 35.5 mOhm @ 5A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 445pF @ 15V
  • Power - Max: 2.7W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione83.400
Logic Level Gate
30V
6.5A
35.5 mOhm @ 5A, 10V
2.5V @ 250µA
12nC @ 10V
445pF @ 15V
2.7W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
SI5936DU-T1-GE3
Vishay Siliconix

MOSFET 2N-CH 30V 6A PWRPK CHPFET

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 6A
  • Rds On (Max) @ Id, Vgs: 30 mOhm @ 5A, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 15V
  • Power - Max: 10.4W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK? ChipFET? Dual
  • Supplier Device Package: PowerPAK? ChipFet Dual
pacchetto: PowerPAK? ChipFET? Dual
Azione3.616
Logic Level Gate
30V
6A
30 mOhm @ 5A, 10V
2.2V @ 250µA
11nC @ 10V
320pF @ 15V
10.4W
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK? ChipFET? Dual
PowerPAK? ChipFet Dual
hot SI5997DU-T1-GE3
Vishay Siliconix

MOSFET 2P-CH 30V 6A PPAK CHIPFET

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 6A
  • Rds On (Max) @ Id, Vgs: 54 mOhm @ 3A, 10V
  • Vgs(th) (Max) @ Id: 2.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 14.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 430pF @ 15V
  • Power - Max: 10.4W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK? ChipFET? Dual
  • Supplier Device Package: PowerPAK? ChipFet Dual
pacchetto: PowerPAK? ChipFET? Dual
Azione11.712
Logic Level Gate
30V
6A
54 mOhm @ 3A, 10V
2.4V @ 250µA
14.5nC @ 10V
430pF @ 15V
10.4W
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK? ChipFET? Dual
PowerPAK? ChipFet Dual
SIA923AEDJ-T1-GE3
Vishay Siliconix

MOSFET 2P-CH 20V 4.5A SC70-6L

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 4.5A
  • Rds On (Max) @ Id, Vgs: 54 mOhm @ 3.8A, 4.5V
  • Vgs(th) (Max) @ Id: 900mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 25nC @ 8V
  • Input Capacitance (Ciss) (Max) @ Vds: 770pF @ 10V
  • Power - Max: 7.8W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK? SC-70-6 Dual
  • Supplier Device Package: PowerPAK? SC-70-6 Dual
pacchetto: PowerPAK? SC-70-6 Dual
Azione3.440
Logic Level Gate
20V
4.5A
54 mOhm @ 3.8A, 4.5V
900mV @ 250µA
25nC @ 8V
770pF @ 10V
7.8W
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK? SC-70-6 Dual
PowerPAK? SC-70-6 Dual
hot SIA929DJ-T1-GE3
Vishay Siliconix

MOSFET 2P-CH 30V 4.5A SC70-6

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
  • Rds On (Max) @ Id, Vgs: 64 mOhm @ 3A, 10V
  • Vgs(th) (Max) @ Id: 1.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 575pF @ 15V
  • Power - Max: 7.8W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK? SC-70-6 Dual
  • Supplier Device Package: PowerPAK? SC-70-6 Dual
pacchetto: PowerPAK? SC-70-6 Dual
Azione108.012
Logic Level Gate
30V
4.5A (Tc)
64 mOhm @ 3A, 10V
1.1V @ 250µA
21nC @ 10V
575pF @ 15V
7.8W
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK? SC-70-6 Dual
PowerPAK? SC-70-6 Dual
hot SIA923EDJ-T1-GE3
Vishay Siliconix

MOSFET 2P-CH 20V 4.5A SC-70-6

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 4.5A
  • Rds On (Max) @ Id, Vgs: 54 mOhm @ 3.8A, 4.5V
  • Vgs(th) (Max) @ Id: 1.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 25nC @ 8V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 7.8W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK? SC-70-6 Dual
  • Supplier Device Package: PowerPAK? SC-70-6 Dual
pacchetto: PowerPAK? SC-70-6 Dual
Azione3.719.412
Logic Level Gate
20V
4.5A
54 mOhm @ 3.8A, 4.5V
1.4V @ 250µA
25nC @ 8V
-
7.8W
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK? SC-70-6 Dual
PowerPAK? SC-70-6 Dual
hot SI4501BDY-T1-GE3
Vishay Siliconix

MOSFET N/P-CH 30V/8V 8SOIC

  • FET Type: N and P-Channel, Common Drain
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V, 8V
  • Current - Continuous Drain (Id) @ 25°C: 12A, 8A
  • Rds On (Max) @ Id, Vgs: 17 mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 805pF @ 15V
  • Power - Max: 4.5W, 3.1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione146.220
Logic Level Gate
30V, 8V
12A, 8A
17 mOhm @ 10A, 10V
2V @ 250µA
25nC @ 10V
805pF @ 15V
4.5W, 3.1W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
hot SI9933CDY-T1-E3
Vishay Siliconix

MOSFET 2P-CH 20V 4A 8SOIC

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 4A
  • Rds On (Max) @ Id, Vgs: 58 mOhm @ 4.8A, 4.5V
  • Vgs(th) (Max) @ Id: 1.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 665pF @ 10V
  • Power - Max: 3.1W
  • Operating Temperature: -50°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
pacchetto: 8-SOIC (0.154", 3.90mm Width)
Azione62.304
Logic Level Gate
20V
4A
58 mOhm @ 4.8A, 4.5V
1.4V @ 250µA
26nC @ 10V
665pF @ 10V
3.1W
-50°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
hot SIA913ADJ-T1-GE3
Vishay Siliconix

MOSFET 2P-CH 12V 4.5A SC70-6

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: 4.5A
  • Rds On (Max) @ Id, Vgs: 61 mOhm @ 3.6A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 8V
  • Input Capacitance (Ciss) (Max) @ Vds: 590pF @ 6V
  • Power - Max: 6.5W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK? SC-70-6 Dual
  • Supplier Device Package: PowerPAK? SC-70-6 Dual
pacchetto: PowerPAK? SC-70-6 Dual
Azione3.192.612
Logic Level Gate
12V
4.5A
61 mOhm @ 3.6A, 4.5V
1V @ 250µA
20nC @ 8V
590pF @ 6V
6.5W
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK? SC-70-6 Dual
PowerPAK? SC-70-6 Dual
hot SI5513CDC-T1-GE3
Vishay Siliconix

MOSFET N/P-CH 20V 4A 1206-8

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 4A, 3.7A
  • Rds On (Max) @ Id, Vgs: 55 mOhm @ 4.4A, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 285pF @ 10V
  • Power - Max: 3.1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Flat Lead
  • Supplier Device Package: 1206-8 ChipFET?
pacchetto: 8-SMD, Flat Lead
Azione38.100
Logic Level Gate
20V
4A, 3.7A
55 mOhm @ 4.4A, 4.5V
1.5V @ 250µA
4.2nC @ 5V
285pF @ 10V
3.1W
-55°C ~ 150°C (TJ)
Surface Mount
8-SMD, Flat Lead
1206-8 ChipFET?
hot SIA907EDJT-T1-GE3
Vishay Siliconix

MOSFET 2P-CH 20V 4.5A SC-70-6L

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
  • Rds On (Max) @ Id, Vgs: 57 mOhm @ 3.6A, 4.5V
  • Vgs(th) (Max) @ Id: 1.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 7.8W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK? SC-70-6 Dual
  • Supplier Device Package: PowerPAK? SC-70-6 Dual
pacchetto: PowerPAK? SC-70-6 Dual
Azione146.412
Logic Level Gate
20V
4.5A (Tc)
57 mOhm @ 3.6A, 4.5V
1.4V @ 250µA
23nC @ 10V
-
7.8W
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK? SC-70-6 Dual
PowerPAK? SC-70-6 Dual
SQ3989EV-T1_GE3
Vishay Siliconix

MOSFET ARRAY 2P-CH 30V 6TSOP

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
  • Rds On (Max) @ Id, Vgs: 155 mOhm @ 400mA, 10V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 11.1nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 1.67W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
  • Supplier Device Package: 6-TSOP
pacchetto: SOT-23-6 Thin, TSOT-23-6
Azione6.048
Standard
30V
2.5A (Tc)
155 mOhm @ 400mA, 10V
1.5V @ 250µA
11.1nC @ 10V
-
1.67W
-55°C ~ 175°C (TJ)
Surface Mount
SOT-23-6 Thin, TSOT-23-6
6-TSOP
SI5933CDC-T1-GE3
Vishay Siliconix

MOSFET 2P-CH 20V 3.7A 1206-8

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 3.7A
  • Rds On (Max) @ Id, Vgs: 144 mOhm @ 2.5A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 6.8nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 276pF @ 10V
  • Power - Max: 2.8W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Flat Lead
  • Supplier Device Package: 1206-8 ChipFET?
pacchetto: 8-SMD, Flat Lead
Azione4.336
Standard
20V
3.7A
144 mOhm @ 2.5A, 4.5V
1V @ 250µA
6.8nC @ 5V
276pF @ 10V
2.8W
-55°C ~ 150°C (TJ)
Surface Mount
8-SMD, Flat Lead
1206-8 ChipFET?
hot SI1902CDL-T1-GE3
Vishay Siliconix

MOSFET 2N-CH 20V 1.1A SC-70-6

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 1.1A
  • Rds On (Max) @ Id, Vgs: 235 mOhm @ 1A, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 3nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 62pF @ 10V
  • Power - Max: 420mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SC-70-6 (SOT-363)
pacchetto: 6-TSSOP, SC-88, SOT-363
Azione370.368
Logic Level Gate
20V
1.1A
235 mOhm @ 1A, 4.5V
1.5V @ 250µA
3nC @ 10V
62pF @ 10V
420mW
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SC-70-6 (SOT-363)
SQJQ904E-T1_GE3
Vishay Siliconix

MOSFET ARRAY 2N-CH 40V PWRPAK8X8

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
  • Rds On (Max) @ Id, Vgs: 3.4 mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 5900pF @ 20V
  • Power - Max: 75W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK? 8 x 8 Dual
  • Supplier Device Package: PowerPAK? 8 x 8 Dual
pacchetto: PowerPAK? 8 x 8 Dual
Azione20.748
Standard
40V
100A (Tc)
3.4 mOhm @ 20A, 10V
3.5V @ 250µA
75nC @ 10V
5900pF @ 20V
75W
-55°C ~ 175°C (TJ)
Surface Mount
PowerPAK? 8 x 8 Dual
PowerPAK? 8 x 8 Dual
SIZF906DT-T1-GE3
Vishay Siliconix

MOSFET ARRAY 2N-CH 30V POWERPAIR

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
  • Rds On (Max) @ Id, Vgs: 3.8 mOhm @ 15A, 10V, 1.17 mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V, 92nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 15V, 8200pF @ 15V
  • Power - Max: 38W (Tc), 83W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerWDFN
  • Supplier Device Package: PowerPAIR? 6x5F
pacchetto: 8-PowerWDFN
Azione24.912
Standard
30V
60A (Tc)
3.8 mOhm @ 15A, 10V, 1.17 mOhm @ 20A, 10V
2.2V @ 250µA
22nC @ 4.5V, 92nC @ 4.5V
2000pF @ 15V, 8200pF @ 15V
38W (Tc), 83W (Tc)
-55°C ~ 150°C (TA)
Surface Mount
8-PowerWDFN
PowerPAIR? 6x5F
SIZ730DT-T1-GE3
Vishay Siliconix

MOSFET 2N-CH 30V 16A 6-POWERPAIR

  • FET Type: 2 N-Channel (Half Bridge)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 16A, 35A
  • Rds On (Max) @ Id, Vgs: 9.3 mOhm @ 15A, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 830pF @ 15V
  • Power - Max: 27W, 48W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-PowerPair?
  • Supplier Device Package: 6-PowerPair?
pacchetto: 6-PowerPair?
Azione90.252
Logic Level Gate
30V
16A, 35A
9.3 mOhm @ 15A, 10V
2.2V @ 250µA
24nC @ 10V
830pF @ 15V
27W, 48W
-55°C ~ 150°C (TJ)
Surface Mount
6-PowerPair?
6-PowerPair?
SQJ202EP-T1_GE3
Vishay Siliconix

MOSFET 2N-CH 12V 20A/60A PPAK SO

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: 20A, 60A
  • Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 15A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 975pF @ 6V
  • Power - Max: 27W, 48W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK? SO-8 Dual
  • Supplier Device Package: PowerPAK? SO-8 Dual Asymmetric
pacchetto: PowerPAK? SO-8 Dual
Azione29.082
Standard
12V
20A, 60A
6.5 mOhm @ 15A, 10V
2V @ 250µA
22nC @ 10V
975pF @ 6V
27W, 48W
-55°C ~ 175°C (TJ)
Surface Mount
PowerPAK? SO-8 Dual
PowerPAK? SO-8 Dual Asymmetric
SQJB90EP-T1_GE3
Vishay Siliconix

MOSFET ARRAY 2N-CH 80V SO8

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 80V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
  • Rds On (Max) @ Id, Vgs: 21.5 mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 25V
  • Power - Max: 48W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK? SO-8 Dual
  • Supplier Device Package: PowerPAK? SO-8 Dual
pacchetto: PowerPAK? SO-8 Dual
Azione26.052
Standard
80V
30A (Tc)
21.5 mOhm @ 10A, 10V
3.5V @ 250µA
25nC @ 10V
1200pF @ 25V
48W
-55°C ~ 175°C (TJ)
Surface Mount
PowerPAK? SO-8 Dual
PowerPAK? SO-8 Dual